Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

Abstract: A semiconductor structure includes a layer arrangement consisting of, in sequence, a semiconductor-on-insulator layer (SOI) over a buried oxide (BOX) layer over a buried stressor (BS) layer with a silicon bonding layer (BL) intervening between the BOX and the BS layers. The semiconductor structure may be created by forming the BS layer on a substrate of a first wafer; growing the BL layer at the surface of the BS layer; wafer bonding the first wafer to a second wafer having a silicon oxide layer formed on a silicon substrate such that the silicon oxide layer of the second wafer is bonded to the BL layer of the first wafer, and thereafter removing a portion of the silicon substrate of the second wafer.

Abstract: A light-emitting diode device with a driving mechanism is provided. A first light-emitting diode chip, a second light-emitting diode chip and a third light-emitting diode chip are arranged on a driver circuit chip, and respectively configured to emit red light, green light and blue light. A first contact of the light-emitting diode chip, a first contact of the second light-emitting diode chip and a first contact of the third light-emitting diode chip are respectively in direct electrical contact with a first output contact, a second output contact and a third output contact of the driver circuit chip in a flip-chip manner. A second contact of the first light-emitting diode chip, a second contact of the second light-emitting diode chip and a second contact of the third light-emitting diode chip are in direct electrical contact with a common contact of the driver circuit chip.

Abstract: Disclosed are a floating photovoltaic panel installation structure and a buoyancy body for the installation of the floating photovoltaic panel, which may have excellent strength and buoyancy performance even while having light-weight characteristics, and stably support a photovoltaic panel on the water even during the flowing of a water surface due to waves.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: A bipolar semiconductor device includes at least a four-layer structure, a first main side with a first electrical contact, and a second main side with a second electrical contact separated from the first main side by at least a base layer of first conductivity type. A shorting layer of the first conductivity type is arranged on the second main side of the base layer. A third layer includes a patterned highly conductive material, such as metal and/or silicides, graphene, etc., and is deposited on the shorting. A fourth layer of the second conductivity type is arranged directly on the third layer, inserted between the shorting layer and the second electrical contact. This concept can be applied to any non-punch-through or punch-through reverse conducting IGBT designs, but is particularly effective for devices using thin wafers, and is also applicable to bipolar diodes in order to improve a soft recovery process.

Abstract: A Metal Oxide Semiconductor (MOS) trench cell includes a plurality of main gate trenches etched in the semiconductor body. In conduction state, the main gate electrode forms vertical MOS channels on the short edges and at least on a portion of the long edges in a mesa of the semiconductor body between neighbouring trenches. The longitudinal direction of the main gate trenches is oriented at an angle between 45 degrees to 90 degrees compared to the longitudinal direction of the first main electrode contacts, in a top plane view. This design offers a wide range of advantages both in terms of performance (reduced losses, improved controllability and reliability) and processability (narrow mesa design rules) and can be applied to both IGBTs and MOSFETs based on silicon or wide bandgap materials such as silicon carbide SiC, zinc oxide (ZnO), gallium oxide (Ga2O3), gallium nitride (GaN), diamond.

Abstract: Existing content such as books are reorganized and condensed as electronic books for display on a mobile computing device. The electronic books have a hierarchical structure. A user interacts with the content of the book by way of a touch screen of the mobile computing device. The navigation may be non-linear in nature and the book is reconstructed as a set of primary ideas, supporting ideas, stacks of cards for the supporting ideas, and individual cards comprising elements and commentary from or about the book.

Abstract: A voltage regulator control integrated circuit includes constituent parts including an error amplifier circuit, a comparator circuit, a compensation signal generator circuit, an oscillator/one-shot circuit, a latch, and a current sense circuit. In a first example, the integrated circuit is operable in a first mode and in a second mode. In the first mode, the various parts are configured and interconnected in such a way that they operate together as a valley current mode regulator control circuit. In the second mode, the various parts are configured and interconnected in such a way that they operate together as a current-mode constant on-time mode regulator control circuit. In another example, a voltage regulator control integrated circuit has the same basic constituent parts and is operable in a first mode as a peak current mode regulator control circuit, or in a second mode as a constant off-time time mode regulator control circuit.

Abstract: A transistor production method includes etching a semiconductor substrate to form at least one upper trench portion, sequentially depositing first and second insulating materials over the substrate and partially removing the second insulating material, etching the substrate to form a lower trench portion, depositing a third insulating material over the substrate, disposing a polycrystalline silicon (pc-Si) material in the trench portions and partially removing such material, depositing a fourth insulating material over the substrate and partially removing the third and fourth insulating materials, removing the second insulating material and disposing another pc-Si material in the upper trench portion, and forming a well and a source on the substrate. A trench power transistor thus produced is also disclosed.

Abstract: A die can be applied to a front conductive layer. Openings can be formed in the conductive layer over contact points on the die. The openings can be filled with a conductive material to electrically couple the conductive layer to the contact points on the die. The front conductive layer can be etched to form a first conductive pattern. Conductive standoffs can be formed on portions of the front conductive layer. An additional front conductive layer can be laminated onto the front side. Openings can be formed in the additional front conductive layer over the standoffs. The openings can be filled with a conductive material to electrically couple the additional conductive layer to the underlying standoffs. The additional conductive layer can be etched to form a second conductive pattern.

Abstract: The present disclosure provides, a DNA construct comprising a polynucleotide fragment comprising a first, and a second sequence, wherein said first sequence encodes a mitochondrial transit peptide, said second sequence encodes a polypeptide having amino acid sequence as set forth in SEQ ID NO: 1, and said polynucleotide fragment is operably linked to a flower specific promoter. The present disclosure also provides with a DNA vector, a recombinant host cell and a method of obtaining the same.

Abstract: A power converter can include first, second, third, and fourth power switches, and a driver for operating the drive switches to modify an input voltage. An AC coupling capacitor can be coupled between the first and fourth power switches. Bootstrap capacitors can be used for driving the first and second power switches, which can be high-side switches. In some embodiments, a current sensing circuit can be used to measure current through the third and/or fourth power switches and for determining the current through the power converter. In some embodiments, the power converter can monitor the voltage across the AC coupling capacitor and can determine the current through the power converter based on the monitored voltages. In some embodiments, the AC coupling capacitor can be pre-charged before the power converter begins normal operation.

Abstract: Systems and methods for monitoring, characterizing and managing communications between and amongst data packet sources are provided, for example by providing Safety Integrity Level of Services (SILoS) for of System-On-Chip (SOC) and/or Network-on-Chip (NOC) deployments. For example, disclosed herein is a controller, that in combination with digital logic circuitry, is configured to receive data packets transmitted between intellectual property blocks of a SOC or NOC deployment for assuring correct sequencing, monitor received signals to detect or predict faults therein, and generate an indication signal indicative of the fault. The indication signal used by a performance analysis system executing software for diagnostic, prognostic analysis.

Abstract: An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.

Abstract: A transistor having at least one passivated Schottky barrier to a channel includes an insulated gate structure on a p-type substrate in which the channel is located beneath the insulated gate structure. The channel and the insulated gate structure define a first and second undercut void regions that extend underneath the insulated gate structure toward the channel from a first and a second side of the insulated gate structure, respectively. A passivation layer is included on at least one exposed sidewall surface of the channel and metal source and drain terminals are located on respective first and second sides of the channel, including on the passivation layer and within the undercut void regions beneath the insulated gate structure. At least one of the metal source and drain terminals comprises a metal that has a work function near a valence band of the p-type substrate.

Abstract: An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.

Abstract: A system comprises an integrated circuit package, an inductor that is part of a power supply, and a printed circuit board (PCB) having a metal trace disposed directly below the inductor when viewed from a top-down perspective. The integrated circuit package includes a first terminal, a second terminal, and a novel inductor current detection and calibration circuit. The first terminal is coupled to a first end of the metal trace and the second terminal is coupled to a second end of the metal trace. During operation of the power supply, the novel circuit detects an OCP condition whereby an output current of the power supply exceeds an OCP level. The novel circuit detects the OCP condition in part by sensing a voltage across the metal trace. After calibration at room temperature, the novel circuit performs accurate OCP detection over a range of temperatures without using any temperature sensor near inductor.

Abstract: An integrated circuit (IC) comprises a regulator circuit, a bootstrap control circuit, and a gate driver that drives a transistor pair in buck or boost mode to switch current through an inductor. The IC has a VIN terminal coupled to receive a voltage generated from an AC power source, a STR terminal coupled to receive a voltage from a stored power source (e.g., a capacitor bank), and a HSB terminal that is capacitively coupled to the inductor. When bucking or boosting, the regulator circuit generates VDD supply voltage from the stored power source, supplies the VDD supply voltage onto the bootstrap control circuit, and the bootstrap control circuit generates a gate driver supply voltage that is supplied to the gate driver circuit. When not bucking or boosting, voltage on the HSB terminal is maintained between a voltage threshold from the AC power source without draining the stored power source.

Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.