Patents Assigned to Semiconductor Energy Laboratory Co., Ltd.
  • Patent number: 11916088
    Abstract: First to fourth switches are provided so that conduction states are able to be controlled independently of each other. The first switch, the third switch, and the second switch are electrically connected in series between a first wiring and a third wiring. The fourth switch has a function of controlling a conduction state between the light-emitting element and a fourth wiring. In a first transistor, a gate is electrically connected to a node to which the third switch and the second switch are electrically connected, one of a source and a drain is electrically connected to a second wiring, and the other is electrically connected to the light-emitting element. A capacitor includes first and second electrodes, the first electrode is electrically connected to a node to which the first switch and the third switch are electrically connected, and the second electrode is electrically connected to the light-emitting element.
    Type: Grant
    Filed: March 9, 2023
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hiroyuki Miyake
  • Patent number: 11916184
    Abstract: A secondary battery with high capacity per unit volume can be provided. A flexible secondary battery with a novel structure can be provided. A secondary battery that can be bent repeatedly can be provided. A highly reliable secondary battery can be provided. A long-life secondary battery can be provided. A secondary battery comprises an inner structure and an exterior body that surrounds the inner structure. The inner structure comprises a positive electrode and a negative electrode. The exterior body comprises a first exterior film and a second exterior film. A region comprising reduced graphene oxide lies between the first exterior film and the second exterior film. The graphene oxide preferably comprises a region where the concentration of oxygen is higher than or equal to 2 atomic percent and lower than or equal to 20 atomic percent.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Ryota Tajima
  • Patent number: 11917318
    Abstract: An imaging device with low power consumption is provided. A pixel includes a first circuit and a second circuit. The first circuit can generate imaging data and retain difference data that is a difference between the imaging data and data obtained in an initial frame. The second circuit includes a circuit that compares the difference data and a voltage range set arbitrarily. The second circuit supplies a reading signal based on the comparison result. With the use of the structure, reading from the pixel is not performed when it is determined that the difference data is within the set voltage range and reading from the pixel can be performed when it is determined that the difference data is outside the voltage range.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Seiichi Yoneda, Hiroki Inoue
  • Patent number: 11916150
    Abstract: One of the objects is to improve display quality by reduction in malfunctions of a circuit. In a driver circuit formed using a plurality of pulse output circuits having first to third transistors and first to fourth signal lines, a first clock signal is supplied to the first signal line; a preceding stage signal is supplied to the second signal line; a second clock signal is supplied to the third signal line; an output signal is output from the fourth signal line. Duty ratios of the first clock signal and the second clock signal are different from each other. A period during which the second clock signal is changed from an L-level signal to an H-level signal after the first clock signal is changed from an H-level signal to an L-level signal is longer than a period during which the preceding stage signal is changed from an L-level signal to an H-level signal.
    Type: Grant
    Filed: September 16, 2022
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Atsushi Umezaki
  • Patent number: 11916065
    Abstract: A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electronic device, and the like are provided.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kei Takahashi, Takeshi Aoki
  • Patent number: 11917840
    Abstract: A novel light-emitting device with high emission efficiency is provided. A light-emitting device with a high blue index (BI) is provided. A light-emitting device with low power consumption is provided. A light-emitting device including a first electrode and a second electrode which are a reflective electrode and a semi-transmissive and semi-reflective electrode, and an EL layer sandwiched between the first electrode and the second electrode, where the EL layer contains an emission center substance, where when the emission center substance in the EL layer includes only one kind of substance, photon energy of a peak wavelength of light emitted from the light-emitting device is designed from an average value of photon energy of light emitted by the emission center substance in a solution state and emission edge energy on a short wavelength side of an emission spectrum of the emission center substance in the solution state.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Toshiki Sasaki, Ryohei Yamaoka, Shiho Nomura
  • Patent number: 11917838
    Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
    Type: Grant
    Filed: January 24, 2022
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kiyoshi Kato
  • Patent number: 11917908
    Abstract: A novel organic compound represented by General Formula (G1) is provided. In General Formula (G1), X1 and X2 each independently represent a secondary or tertiary alkyl group having 3 to 6 carbon atoms and having a branched carbon atom which is bonded to a phenyl group. In addition, Ar1 represents a substituted or unsubstituted condensed aromatic ring skeleton having 10 to 60 carbon atoms and composed of two or more rings or a substituted or unsubstituted condensed heteroaromatic ring skeleton having 8 to 60 carbon atoms and composed of two or more rings. Furthermore, Ar2 represents a substituted or unsubstituted aryl group having 6 to 25 carbon atoms. Moreover, n represents any of 1 to 3, and in the case where n is 2 or more, two or more groups bonded to Ar1 may be identical or different.
    Type: Grant
    Filed: December 9, 2020
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kyoko Takeda, Harue Osaka, Hiroshi Kadoma, Satoshi Seo, Tsunenori Suzuki, Naoaki Hashimoto
  • Patent number: 11917882
    Abstract: A light-emitting device, an electronic device, or a lighting device with low power consumption and high reliability is provided. The light-emitting device includes a first light-emitting element, a second light-emitting element, a third light-emitting element, and a fourth light-emitting element. The first to fourth light-emitting elements include the same EL layer between an anode and a cathode. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer contains a fluorescent substance. The peak wavelength of an emission spectrum of the fluorescent substance in a toluene solution of the fluorescent substance is 440 nm to 460 nm, preferably 440 nm to 455 nm. The second light-emitting layer contains a phosphorescent substance. The first light-emitting element exhibits blue emission. The second light-emitting element exhibits green emission. The third light-emitting element exhibits red emission.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: February 27, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Toshiki Sasaki, Tsunenori Suzuki, Sachiko Kawakami, Naoaki Hashimoto
  • Publication number: 20240063028
    Abstract: A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.
    Type: Application
    Filed: August 12, 2021
    Publication date: February 22, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Shunichi ITO, Yoshihiro KAMATSU, Shinobu KAWAGUCHI, Shinya SASAGAWA
  • Publication number: 20240061471
    Abstract: An e-book reader in which destruction of a driver circuit at the time when a flexible panel is handled is inhibited. In addition, an e-book reader having a simplified structure. A plurality of flexible display panels each including a display portion in which display control is performed by a scan line driver circuit and a signal line driver circuit, and a binding portion fastening the plurality of display panels together are included. The signal line driver circuit is provided inside the binding portion, and the scan line driver circuit is provided at the edge of the display panel in a direction perpendicular to the binding portion.
    Type: Application
    Filed: October 27, 2023
    Publication date: February 22, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Yasuyuki Arai, Ikuko Kawamata, Atsushi Miyaguchi, Yoshitaka Moriya
  • Publication number: 20240065077
    Abstract: A display device that can display a high-quality image is provided. The display device includes a first conductive layer, a second conductive layer, a light-emitting layer, and a lens. The light-emitting layer is provided over the first conductive layer, the second conductive layer is provided over the light-emitting layer, and the lens is provided over the second conductive layer. The lens contains a photosensitive material. An end portion of the lens is located more outward than an end portion of the light-emitting layer and an end portion of the second conductive layer. The display device further includes an insulating layer, and the insulating layer includes a region in contact with a top surface of the lens, a region in contact with a side surface of the second conductive layer, and a region in contact with a side surface of the light-emitting layer.
    Type: Application
    Filed: November 24, 2021
    Publication date: February 22, 2024
    Applicant: Semiconductor Energy Laboratory Co., LTD.
    Inventors: Daiki Nakamura, Tomoya AOYAMA
  • Publication number: 20240065035
    Abstract: A display device capable of displaying a high-quality image is provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first lower electrode, a first light-emitting layer over the first lower electrode, and a first upper electrode over the first light-emitting layer. The second light-emitting element includes a second lower electrode, a second light-emitting layer over the second lower electrode, and a second upper electrode over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is between the first upper electrode and first light-emitting layer and the second upper electrode and second light-emitting layer. The first upper electrode includes a region projecting from a side surface of the first light-emitting layer. The second upper electrode includes a region projecting from a side surface of the second light-emitting layer.
    Type: Application
    Filed: December 28, 2021
    Publication date: February 22, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuhiro JINBO, Yuichi YANAGISAWA
  • Publication number: 20240065014
    Abstract: A light-emitting apparatus with low power consumption is provided. A light-emitting apparatus including a first light-emitting device and a first color conversion layer. The first light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a layer including a material with a refractive index lower than or equal to 1.75 at 467 nm. The first color conversion layer includes a first substance capable of emission by absorbing light. Light emitted from the first light-emitting device enters the first color conversion layer.
    Type: Application
    Filed: October 23, 2023
    Publication date: February 22, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei YAMAZAKI, Takeyoshi WATABE, Tomohiro KUBOTA, Airi UEDA, Satoshi SEO, Nobuharu OHSAWA, Yuko KUBOTA
  • Publication number: 20240065036
    Abstract: A display device capable of high-quality images can be provided. The display device includes a first light-emitting element, a second light-emitting element, and a gap. The first light-emitting element includes a first light-emitting layer and a first electron-injection layer over the first light-emitting layer, and the second light-emitting element includes a second light-emitting layer and a second electron-injection layer over the second light-emitting layer. The first light-emitting element is adjacent to the second light-emitting element. The gap is placed between the first electron-injection layer and first light-emitting layer and the second electron-injection layer and second light-emitting layer. The first electron-injection layer comprises a region projecting from the side surface of the first light-emitting layer, and the second electron-injection layer comprises a region projecting from the side surface of the second light-emitting layer.
    Type: Application
    Filed: December 27, 2021
    Publication date: February 22, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuhiro JINBO, Yuichi YANAGISAWA
  • Publication number: 20240065024
    Abstract: A novel light-emitting device that is highly convenient, useful, or reliable is provided. A light-emitting device including a second electrode over a first electrode with an EL layer sandwiched therebetween is provided. The EL layer includes a light-emitting layer and an oxidation-resistant layer over the light-emitting layer. The EL layer includes a side surface. The light-emitting device includes a block layer in contact with a top surface and the side surface of the EL layer. The second electrode is in contact with the side surface of the EL layer through the block layer. The oxidation-resistant layer includes any one or a plurality of oxides of metals belonging to Group 4 to Group 8 of the periodic table and an organic compound having an electron-withdrawing group.
    Type: Application
    Filed: December 6, 2021
    Publication date: February 22, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuharu OHSAWA, Satoshi SEO
  • Publication number: 20240061285
    Abstract: The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.
    Type: Application
    Filed: November 2, 2023
    Publication date: February 22, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satohiro OKAMOTO, Yasuyuki ARAI, Ikuko KAWAMATA, Atsushi MIYAGUCHI, Yoshitaka MORIYA
  • Patent number: 11910710
    Abstract: A novel organic compound with which the emission characteristics, emission efficiency, and reliability of a light-emitting element can be improved is provided. The organic compound has an imidazo[1,2-f]phenanthridine skeleton and a dibenzothiophene skeleton or a dibenzofuran skeleton bonded through an arylene group. The light-emitting element including the organic compound in a light-emitting layer shows high efficiency and low power consumption.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: February 20, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoya Hirose, Hiroshi Kadoma, Satoko Shitagaki, Satoshi Seo
  • Patent number: 11908876
    Abstract: A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.
    Type: Grant
    Filed: November 3, 2021
    Date of Patent: February 20, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuki Okamoto, Yoshiyuki Kurokawa, Hiroki Inoue, Takuro Ohmaru
  • Patent number: 11908990
    Abstract: To improve the flexibility of a power storage device, or provide a high-capacity power storage device. The power storage device includes a positive electrode, a negative electrode, an exterior body, and an electrolyte. The outer periphery of each of the positive electrode active material layer and the negative electrode active material layer is a closed curve. The exterior body includes a film and a thermocompression-bonded region. The inner periphery of the thermocompression-bonded region is a closed curve. The electrolyte, the positive electrode active material layer, and the negative electrode active material layer are in a region surrounded by the thermocompression-bonded region.
    Type: Grant
    Filed: January 27, 2022
    Date of Patent: February 20, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masayuki Kimura, Junya Goto