Patents Assigned to Semiconductor Energy Laboratory Co., Ltd.
  • Publication number: 20220149164
    Abstract: A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle ?1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle ?2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.
    Type: Application
    Filed: January 24, 2022
    Publication date: May 12, 2022
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Kengo Akimoto, Daisuke Kawae
  • Publication number: 20220149308
    Abstract: A light-emitting device with a long lifetime is provided. In a light-emitting device that includes an EL layer between a pair of electrodes, a light-emitting layer included in the EL layer has a functional stacked-layer structure, whereby the efficiency and reliability of the light-emitting device can be increased.
    Type: Application
    Filed: February 12, 2020
    Publication date: May 12, 2022
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi SEO, Harue OSAKA, Naoaki HASHIMOTO, Shunpei YAMAZAKI
  • Publication number: 20220149205
    Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved. A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.
    Type: Application
    Filed: January 27, 2022
    Publication date: May 12, 2022
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuharu HOSAKA, Yukinori SHIMA, Masataka NAKADA, Masami JINTYOU
  • Patent number: 11329071
    Abstract: A display device with high resolution is provided. A display device with high display quality is provided. A display device includes a display portion, a first terminal group, and a second terminal group. The display portion includes pixels, scan lines, and signal lines. The first terminal group and the second terminal group are apart from each other. The first terminal group includes first terminals and the second terminal group includes second terminals. The scan lines are each electrically connected to the pixels arranged in a row direction. The signal lines are each electrically connected to the pixels arranged in a column direction. The signal lines are each electrically connected to the first terminal or the second terminal. The display portion includes a first region where the signal lines electrically connected to the first terminals and the signal lines electrically connected to the second terminals are mixed.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: May 10, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kei Takahashi, Shunpei Yamazaki
  • Patent number: 11327376
    Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: May 10, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masatoshi Yokoyama, Shigeki Komori, Manabu Sato, Kenichi Okazaki, Shunpei Yamazaki
  • Patent number: 11330213
    Abstract: An imaging device with low power consumption is provided. It includes a pixel capable of outputting difference data between two different frames, a circuit determining the significance of the difference data, a circuit controlling power supply, an A/D converter, and the like; obtains image data and then obtains difference data; and shuts off power supply to the A/D converter and the like in the case where it is determined that there is no difference, and continues or restarts the power supply to the A/D converter and the like when it is determined that there is a difference. Determining the significance of the difference data can be performed row by row in a pixel array or at nearly the same time in all the pixels included in the pixel array.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: May 10, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takashi Nakagawa, Munehiro Kozuma, Yoshiyuki Kurokawa, Takayuki Ikeda
  • Patent number: 11329065
    Abstract: An object is to provide a semiconductor device with large memory capacity. The semiconductor device includes first to seventh insulators, a first conductor, and a first semiconductor. The first conductor is positioned on a first top surface of the first insulator and a first bottom surface of the second insulator. The third insulator is positioned in a region including a side surface and a second top surface of the first insulator, a side surface of the first conductor, and a second bottom surface and a side surface of the second insulator. The fourth insulator, the fifth insulator, and the first semiconductor are sequentially stacked on the third insulator. The sixth insulator is in contact with the fifth insulator in a region overlapping the first conductor. The seventh insulator is positioned in a region including the first semiconductor and the sixth insulator.
    Type: Grant
    Filed: December 29, 2020
    Date of Patent: May 10, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hajime Kimura, Tatsunori Inoue
  • Patent number: 11329166
    Abstract: In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved. A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: May 10, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuharu Hosaka, Yukinori Shima, Masataka Nakada, Masami Jintyou
  • Patent number: 11329122
    Abstract: A display panel or a display device with high display quality is provided. The display panel includes a light-emitting element, an insulating layer, a protective layer, and a conductive layer. The light-emitting element includes a first electrode, a light-emitting layer, and a second electrode. The light-emitting element emits light to the protective layer side. The insulating layer includes a first opening overlapping with the first electrode. The insulating layer covers an end portion of the first electrode. The light-emitting layer overlaps with the first electrode through the first opening. The second electrode is positioned over the light-emitting layer. The protective layer is over and in contact with the second electrode. The protective layer functions as a protective layer of the light-emitting element. The protective layer includes a second opening overlapping with the insulating layer. The conductive layer is connected to the second electrode through the second opening.
    Type: Grant
    Filed: July 26, 2018
    Date of Patent: May 10, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Nozomu Sugisawa, Daiki Nakamura, Tomoya Aoyama, Yusuke Nishido
  • Publication number: 20220140090
    Abstract: A semiconductor device having a large storage capacity per unit area is provided. The semiconductor device includes a memory transistor. The memory transistor includes a conductor including an opening, a first insulator provided in contact with an inner side of the opening, a second insulator provided in contact with an inner side of the first insulator, a third insulator provided in contact with an inner side of the second insulator, a first oxide provided in contact with an inner side of the third insulator, and a second oxide provided in contact with an inner side of the first oxide. An energy gap of the second oxide is narrower than an energy gap of the first oxide.
    Type: Application
    Filed: January 14, 2022
    Publication date: May 5, 2022
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Shunpei YAMAZAKI
  • Publication number: 20220140274
    Abstract: A light-emitting device with high emission efficiency and reliability is provided. The light-emitting device includes a fluorescent light-emitting layer and a phosphorescent light-emitting layer. A host material used in the fluorescent light-emitting layer has a function of converting triplet excitation energy into light emission and a guest material used in the fluorescent light-emitting layer emits fluorescence. The guest material has a molecular structure including a luminophore and a protecting group, and one molecule of the guest material includes five or more protecting groups. The introduction of the protecting groups into the molecule inhibits transfer of triplet excitation energy from the host material to the guest material by the Dexter mechanism. An alkyl group or a branched-chain alkyl group is used as the protecting group.
    Type: Application
    Filed: January 24, 2020
    Publication date: May 5, 2022
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro ISHISONE, Nobuharu OHSAWA, Satoshi SEO
  • Patent number: 11322700
    Abstract: A highly portable and highly browsable light-emitting device is provided. A light-emitting device that is less likely to be broken is provided. The light-emitting device has a strip-like region having high flexibility and a strip-like region having low flexibility that are arranged alternately. In the region having high flexibility, a light-emitting panel and a plurality of spacers overlap with each other. In the region having low flexibility, the light-emitting panel and a support overlap with each other. When the region having high flexibility is bent, the angle between normals of facing planes of the two adjacent spacers changes according to the bending of the light-emitting panel; thus, a neutral plane can be formed in the light-emitting panel or in the vicinity of the light-emitting panel.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: May 3, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaaki Hiroki, Akio Endo
  • Patent number: 11322442
    Abstract: A semiconductor device having favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The semiconductor layer includes an island-shaped top surface. The first insulating layer is provided in contact with a top surface and a side surface of the semiconductor layer. The first conductive layer is positioned over the first insulating layer and includes a portion overlapping with the semiconductor layer. In addition, the semiconductor layer includes a metal oxide, and the first insulating layer includes an oxide. The semiconductor layer includes a first region overlapping with the first conductive layer and a second region not overlapping with the first conductive layer.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: May 3, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Toshimitsu Obonai, Masami Jintyou, Daisuke Kurosaki
  • Patent number: 11322689
    Abstract: A light-emitting element containing a fluorescent material and having high emission efficiency is provided. The light-emitting element contains the fluorescent material and a host material. The host material contains a first organic compound and a second organic compound. The first organic compound and the second organic compound can form an exciplex. The proportion of a delayed fluorescence component in light emitted from the exciplex is higher than or equal to 5%, and the delayed fluorescence component contains a delayed fluorescence component whose fluorescence lifetime is 10 ns or longer and 50 ?s or shorter.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: May 3, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takahiro Ishisone, Shunsuke Hosoumi, Tatsuyoshi Takahashi, Satoshi Seo
  • Patent number: 11322745
    Abstract: Provided is an electrode including a current collector and an active material layer. The active material layer includes an active material, a film including silicone, a conductive additive, and a binder. The active material is in the form of a particle. The film including silicone covers at least part of the active material.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: May 3, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Tatsuya Ikenuma, Kazutaka Kuriki, Ai Nakagawa
  • Patent number: 11317806
    Abstract: A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: May 3, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Jun Koyama
  • Patent number: 11322498
    Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: May 3, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Kiyoshi Kato
  • Patent number: 11322746
    Abstract: A novel electrode is provided. A novel power storage device is provided. A conductor having a sheet-like shape is provided. The conductor has a thickness of greater than or equal to 800 nm and less than or equal to 20 ?m. The area of the conductor is greater than or equal to 25 mm2 and less than or equal to 10 m2. The conductor includes carbon and oxygen. The conductor includes carbon at a concentration of higher than 80 atomic % and oxygen at a concentration of higher than or equal to 2 atomic % and lower than or equal to 20 atomic %.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: May 3, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Teruaki Ochiai, Takahiro Kawakami, Takuya Miwa
  • Patent number: 11321039
    Abstract: A novel bendable and highly portable information processor is provided. In addition, a novel information processor capable of displaying information or the like on a seamless large screen is provided. A novel information processor in which one display region can be divided into two regions at a bend position is provided. A novel information processor in which different images or images for different purposes can be displayed in the respective regions is provided. The present inventors have conceived a program including a step of dividing the display region and displaying image data in the respective regions when a display unit of the information processor is bent.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: May 3, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuji Iwaki, Katsuki Yanagawa
  • Patent number: 11313910
    Abstract: An anomaly detection system for a secondary battery which detects the remaining capacity of the secondary battery on an electric vehicle, cautions against the secondary battery with anomalous characteristics, stops using the secondary battery, changes the secondary battery, or changes charging conditions of the secondary battery is provided. The anomaly detection system is provided; the system compares a value obtained by estimating internal resistance or SOC of a secondary battery based on the measured value of a current or a voltage of the secondary battery with the use of a nonlinear Kalman filter and a value input to an anomaly detection system (network) of AI to predict a change in the internal resistance; the system regards a case where the difference is large as an anomaly; and the system detects an anomaly.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: April 26, 2022
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Toshiyuki Isa, Koji Kusunoki, Akihiro Chida, Kouhei Toyotaka, Ryota Tajima