Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: Provided is a novel light-emitting element, a light-emitting element with a long lifetime, or a light-emitting element with high emission efficiency. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer containing a fluorescent substance and a host material, a first electron-transport layer containing a first electron-transport material, and a second electron-transport layer containing a second electron-transport material, which are in contact with each other and in this order. The LUMO level of each of the host material and the second electron-transport material is higher than the LUMO level of the first electron-transport material.

Abstract: An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with a local maximum peak on the longest wavelength side of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power.

Abstract: A correction method of a display apparatus is provided. A method for evaluating display quality of a display apparatus is provided. The display apparatus includes a display panel, a correction circuit, and a memory. First, first imaging data including all pixels in the display apparatus is acquired in a state where an image with a first grayscale is displayed on the display apparatus. Then, second imaging data including all the pixels in the display apparatus is acquired in a state where an image with a second grayscale is displayed on the display apparatus. Next, correction data is generated based on the first imaging data and the second imaging data. After that, the correction data is output to the memory of the display apparatus. The correction circuit has a function of correcting image data based on the correction data stored in the memory to generate corrected image data and outputting the corrected image data to the display panel.

Abstract: A semiconductor device having a large storage capacity per unit area is provided.

Abstract: A light-emitting element which has low driving voltage and high emission efficiency is provided. The light-emitting element includes, between a pair of electrodes, a hole-transport layer and a light-emitting layer over the hole-transport layer. The light-emitting layer contains a first organic compound having an electron-transport property, a second organic compound having a hole-transport property, and a light-emitting third organic compound converting triplet excitation energy into light emission. A combination of the first organic compound and the second organic compound forms an exciplex. The hole-transport layer contains at least a fourth organic compound whose HOMO level is lower than or equal to that of the second organic compound and a fifth organic compound whose HOMO level is higher than that of the second organic compound.

Abstract: A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen and having a channel protective layer over a semiconductor layer to be a channel formation region overlapping a gate electrode layer and a pixel electrode layer electrically connected to the inverted staggered thin film transistor. In the periphery of the pixel portion in this display device, a pad portion including a conductive layer made of the same material as the pixel electrode layer is provided. In addition, the conductive layer is electrically connected to a common electrode layer formed on a counter substrate.

Abstract: An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.

Abstract: The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.

Abstract: A light-emitting element containing a light-emitting material with high luminous efficiency is provided. The light-emitting element includes a host material and a guest material. The host material includes a first organic compound and a second organic compound. In the first organic compound, a difference between a singlet excitation energy level and a triplet excitation energy level is larger than 0 eV and smaller than or equal to 0.2 eV. The HOMO level of one of the first organic compound and the second organic compound is higher than or equal to that of the other organic compound, and the LUMO level of the one of the organic compounds is higher than or equal to that of the other organic compound. The first organic compound and the second organic compound form an exciplex.

Abstract: A display device capable of performing proper display without image signal conversion is provided. In the case of high-resolution display, individual data is supplied to each pixel through a first signal line and a first transistor included in each pixel. In the case of low-resolution display, the same data is supplied to a plurality of pixels through a second signal line and a second transistor electrically connected to the plurality of pixels. When the number of image signals to be displayed is more than one and the image signals support different resolutions, display can be performed without up conversion or down conversion by switching an image signal supply path as described above.

Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes first and second transistors. The first transistor includes a semiconductor layer, a pair of first conductive layers, and a pair of second conductive layers over the pair of first conductive layers. The pair of first conductive layers and the pair of second conductive layers function as a source electrode and a drain electrode of the first transistor. A third conductive layer functioning as a gate electrode of the second transistor is in contact with one of the pair of first conductive layers. In a cross-sectional view of the first transistor in the channel width direction, the height of the semiconductor layer is larger than the width of the semiconductor layer. The semiconductor device can include a capacitor, in which the third conductive layer also functions as one of a pair of electrodes.

Abstract: A display device including a peripheral circuit portion with high operation stability. The display device includes a first substrate and a second substrate. A first insulating layer is on a first plane of the first substrate, and a second insulating layer is on a first plane of the second substrate. An area of the first plane of the first substrate is the same as an area of the first plane of the second substrate. The first plane of the first substrate and the first plane of the second substrate face each other. A bonding layer is between the first insulating layer and the second insulating layer. A protection film is in contact with the first substrate, the first insulating layer, the bonding layer, the second insulating layer, and the second substrate.

Abstract: A highly reliable display device is provided.

Abstract: A novel compound is provided. The novel compound is represented by General Formula (G1). In General Formula (G1), A represents a substituted or unsubstituted condensed aromatic ring having 10 to 30 carbon atoms or a substituted or unsubstituted condensed heteroaromatic ring having 10 to 30 carbon atoms, and R1 represents a substituted or unsubstituted aryl group having 6 to 25 carbon atoms. Each of Y1 and Y2 independently represents a cycloalkyl group having a bridge structure and having 7 to 10 carbon atoms.

Abstract: A display device excellent in downsizing, reduction in power consumption, or layout flexibility of an arithmetic device is provided. The display device includes a pixel circuit, a driver circuit, and a functional circuit. The driver circuit has a function of outputting an image signal for performing display in the pixel circuit. The functional circuit includes a CPU including a CPU core including a flip-flop electrically connected to a backup circuit. The display device includes a first layer and a second layer. The first layer includes the driver circuit and the CPU. The second layer includes the pixel circuit and the backup circuit. The first layer includes a semiconductor layer including silicon in a channel formation region. The second layer includes a semiconductor layer including a metal oxide in a channel formation region. The CPU has a function of correcting the image signal in accordance with the amount of current flowing through the pixel circuit.

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract: A highly sensitive imaging device that can perform imaging even under a low illuminance condition is provided. One electrode of a photoelectric conversion element is electrically connected to one of a source electrode and a drain electrode of a first transistor and one of a source electrode and a drain electrode of a third transistor. The other of the source electrode and the drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor. The other electrode of the photoelectric conversion element is electrically connected to a first wiring. A gate electrode of the first transistor is electrically connected to a second wiring. When a potential supplied to the first wiring is HVDD, the highest value of a potential supplied to the second wiring is lower than HVDD.

Abstract: A flip-flop circuit is provided. A driver circuit is provided. The flip-flop circuit includes first to fifth input terminals and first to third output terminals, the first input terminal is supplied with a first trigger signal, the second input terminal is supplied with a second trigger signal, the third input terminal is supplied with a batch selection signal, the fourth input terminal is supplied with a first pulse width modulation signal, and the fifth input terminal is supplied with a second pulse width modulation signal.

Abstract: An increase in fabricating cost of a display module including a touch sensor is suppressed. A display device which includes a first substrate, a second substrate, and liquid crystal interposed between the first substrate and the second substrate includes a display portion. The display portion includes a sensor unit and a pixel. The sensor unit includes a first transistor, a first conductive film electrically connected to a gate of the first transistor, and a second conductive film. At least part of the first conductive film overlaps with at least part of the second conductive film. The pixel includes a second transistor, and a pixel electrode electrically connected to the second transistor. At least part of the pixel electrode overlaps with at least part of the first conductive film.