Abstract: To achieve multifunctionality, a large number of components and the time and effort for implementing the components are required, which leads to an increase in the manufacturing cost and a reduction in yield. A matrix display portion and a matrix optical sensor portion are formed over one substrate. In addition, a driver circuit of the display portion and a driver circuit of the optical sensor portion formed over the same substrate as that for the display portion are built in one chip, whereby the number of components can be reduced. When the optical sensor is formed in a display panel, a barcode reader function or a scanner function can be given to the display panel. Furthermore, a function of authenticating fingerprints or the like or an input/output function of a touch sensor can be given to the display panel.

Abstract: A communication device that can transmit and receive a signal with a large amplitude is provided. The communication device includes an amplifier circuit including first to fourth transistors, first to fourth bias transistors, first to fourth loads, and first to fourth terminals. The drains of the first to fourth transistors are electrically connected to the sources of the first to fourth bias transistors. The sources of the first to fourth transistors are electrically connected to power supply lines. The gates of the first and second bias transistors are electrically connected to a first wiring, and the gates of the third and fourth bias transistors are electrically connected to a second wiring. The first to fourth terminals are electrically connected to the gates of the first to fourth transistors, the drains of the third, fourth, first, and second bias transistors, and the first to fourth loads.

Abstract: A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions.

Abstract: An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.

Abstract: One embodiment of the present invention is a display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is over the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are over the first insulating layer. The color conversion layer is over the second light-emitting diode. The color conversion layer is configured to convert light emitted from the second light-emitting diode into a light having a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. A top surface of the gate electrode is level or substantially level with a top surface of the second insulating layer.

Abstract: A convenient electronic device or the like is provided. The power consumption of an electronic device or the like is reduced. An electronic device or the like having high visibility regardless of the brightness of external light is provided. An electronic device or the like that can display both a smooth moving image and an eye-friendly still image is provided. Such an electronic device is an electronic device including a first display portion, a second display portion, and a control portion. The control portion is configured to make the first display portion and the second display portion individually display two or more of a first image, a second image, and a third image at a time. The first image is displayed with reflected light, the second image is displayed with emitted light, and the third image is displayed with light including both reflected light and emitted light.

Abstract: A semiconductor device that can be miniaturized or highly integrated can be provided. The semiconductor device includes a first conductor positioned over a substrate; an oxide positioned in contact with atop surface of the first conductor; a second conductor, a third conductor, and a fourth conductor positioned over the oxide; a first insulator in which a first opening and a second opening are formed, the first insulator being positioned over the second conductor to the fourth conductor; a second insulator positioned in the first opening; a fifth conductor positioned over the second insulator; a third insulator positioned in the second opening; and a sixth conductor positioned over the third insulator. The third conductor is positioned to overlap with the first conductor. The first opening is formed to overlap with a region between the second conductor and the third conductor. The second opening is formed to overlap with a region between the third conductor and the fourth conductor.

Abstract: An electronic device providing a high sense of immersion is provided. An electronic device with low power consumption is provided. A first display device includes a plurality of first pixels. The first pixel includes a light-emitting element exhibiting green. A second display device includes a plurality of second pixels. The second pixel includes a light-emitting element exhibiting red and a light-emitting element exhibiting blue. Each of the first display device and the second display device has a function of displaying a first image and a second image. The first display device is provided at such a position that the first image is reflected by the first half mirror and enters an eyepiece lens. The second display device is provided at such a position that the second image passes through the first half mirror and enters the eyepiece lens. The first image and the second image are each presented through the eyepiece lens.

Abstract: An electronic device that can easily increase the viewing angle and has a reduced screen-door effect is provided. In the electronic device, images displayed on a display panel with a low pixel density and a display panel with a high pixel density are synthesized to be seen. The electronic device includes a first display panel that has a relatively large screen size and a low pixel density, and a second display panel and a third display panel each of which has a relatively small screen size and a high pixel density. The electronic device is configured such that visual information enters the central field of view from the second display panel or the third display panel and visual information enters the peripheral field of view from the first display panel. Such a configuration can easily increase the viewing angle and reduce the screen-door effect.

Abstract: A novel storage device is provided. A storage device in which N memory layers each including a plurality of memory cells provided in a matrix (Nis an integer greater than or equal to 2) are stacked is provided. A write bit line, a read bit line, and a selection line are provided along a stacking direction of the memory layers, and a write word line and a read word line are provided in the direction orthogonal to the stacking direction of the memory layers. The memory cell includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to the write bit line through a first conductor including a region functioning as one of a source electrode and a drain electrode. The first conductor includes a region where at least one of the top surface, a side surface, and the bottom surface of the first conductor is in contact with the write bit line.

Abstract: A novel material is provided. A composite oxide semiconductor in which a first region and a plurality of second regions are mixed is provided. Note that the first region contains at least indium, an element M (the element M is one or more of Al, Ga, Y, and Sn), and zinc, and the plurality of second regions contain indium and zinc. Since the plurality of second regions have a higher concentration of indium than the first region, the plurality of second regions have a higher conductivity than the first region. An end portion of one of the plurality of second regions overlaps with an end portion of another one of the plurality of second regions. The plurality of second regions are three-dimensionally surrounded with the first region.

Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

Abstract: Malfunctions of a circuit is prevented and the reliability of a semiconductor device using the circuit is improved. The semiconductor device includes a first transistor, a second transistor, a load, and a wiring having a function of supplying a power supply potential to the load. A semiconductor layer of the first transistor includes an oxide semiconductor. A semiconductor layer of the second transistor includes an oxide semiconductor. A source and a drain of the first transistor are electrically connected to the wiring. A first gate of the first transistor is supplied with a reference potential. A source and a drain of the second transistor are supplied with the reference potential. A first gate of the second transistor is electrically connected to the wiring. The semiconductor layer of the first transistor includes a region overlapping with the wiring. The semiconductor layer of the second transistor includes a region overlapping with the wiring.

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

Abstract: A display device capable of improving image quality is provided. A display device includes a plurality of pixel blocks in a display region. The pixel blocks each include a first circuit and a plurality of second circuits. The first circuit has a function of adding a plurality of pieces of data supplied from a source driver. The second circuit includes a display element and has a function of performing display in accordance with the added data. One pixel has a configuration including one second circuit and an component of the first circuit that is shared. When the first circuit is shared by a plurality of pixels, the aperture ratio can be increased.

Abstract: A display device or an electronic device with high portability and browsability is provided. A display device which includes two display panels that overlap with each other and in which the area of a portion where the two display panels overlap with each other is variable is provided. The larger the area where the two display panels overlap with each other is, the smaller the display device becomes. The first display panel includes a first region that performs display. The second display panel includes a second region that performs display, and a third region that is adjacent to the second region and transmits visible light. When the third region overlaps with the side of a surface which performs display of the first region, display can be performed using a seamless large display region.

Abstract: An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.

Abstract: A novel metal oxide is provided. One embodiment of the present invention is a crystalline metal oxide. The metal oxide includes a first layer and a second layer; the first layer has a wider bandgap than the second layer; the first layer and the second layer form a crystal lattice; and in the case where a carrier is excited in the metal oxide, the carrier is transferred through the second layer. Furthermore, the first layer contains an element M (M is one or more selected from Al, Ga, Y, and Sn) and Zn, and the second layer contains In.

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

Abstract: The resolution of a display apparatus having a light detection function is increased. A display apparatus includes a plurality of transistors and a light-emitting and light-receiving device in a subpixel. The light-emitting and light-receiving device has a function of emitting light of a first color and a function of receiving light of a second color. One of a source and a drain of a first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a gate of a second transistor. One electrode of the light-emitting and light-receiving device is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of a third transistor, and one of a source and a drain of a fifth transistor. One of a source and a drain of a fourth transistor is electrically connected to a second wiring, and the other thereof is electrically connected to the other of the source and the drain of the third transistor.