Patents Assigned to Semiconductor Energy Laboratory Co., Ltd.
  • Patent number: 11901822
    Abstract: A semiconductor device in which an increase in circuit area is inhibited is provided. The semiconductor device includes a first circuit layer and a second circuit layer over the first circuit layer; the first circuit layer includes a first transistor; the second circuit layer includes a second transistor; a gate of the second transistor is electrically connected to one of a source and a drain of the first transistor; a source and a drain of the second transistor are electrically connected to the other of the source and the drain of the first transistor; and a semiconductor layer of the second transistor contains a metal oxide.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuto Yakubo, Hitoshi Kunitake, Takayuki Ikeda
  • Patent number: 11899329
    Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.
    Type: Grant
    Filed: February 22, 2023
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hajime Kimura, Hideki Uochi
  • Patent number: 11899886
    Abstract: An electronic device having a novel structure is provided. A battery is provided in each component of an electronic device, whereby the electronic device includes two batteries. The electronic device including the two batteries and a display portion that can be called a flexible display and has a plurality of foldable portions is provided as a novel device.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Ishikawa
  • Patent number: 11901370
    Abstract: It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern having a thick region and a region thinner than the thick region is formed over the metal film using an exposure mask having a semi light-transmitting portion. The pixel electrode, and the metal film formed over part of the pixel electrode to be in contact therewith are formed using the resist pattern. Accordingly, a pixel electrode and a metal film can be formed using one resist mask.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 11899297
    Abstract: A novel foldable display device or an electronic device using the same, e.g., a portable information processor or a portable communication information device, is provided. A foldable display device of which a display panel can be folded n times (n?1, and n is a natural number) at a curvature radius of greater than or equal to 1 mm and less than or equal to 100 mm is obtained. The display device can be miniaturized by being foldable. In addition, in the state where the flexible display panel is opened, display which is unbroken and continuous over a plurality of housings is possible. The plurality of housings can store a circuit, an electronic component, a battery and the like inside as appropriate, and the thickness of each housing can be small.
    Type: Grant
    Filed: April 14, 2023
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yoshiharu Hirakata
  • Patent number: 11900642
    Abstract: An inspection device having a plurality of functions is achieved. The performance of an inspection device is improved. A structure of an inspection device is simplified. A structure of an imaging device is simplified. The inspection device includes a light source having a function of emitting infrared light, a light source having a function of emitting visible light, and an imaging portion which are provided over a substrate having flexibility, and inspects a fruit or vegetable. A first image based on light including reflected light of the infrared light, and a second image and a third image based on tight including reflected light of the visible light are captured by the imaging portion. The inspection device has a function of detecting one or more of the sugar content, the acidity, and a physiological disorder of a fruit or vegetable on the basis of the first image.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masumi Nomura, Seiichi Yoneda
  • Patent number: 11898261
    Abstract: To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness.
    Type: Grant
    Filed: January 6, 2022
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Teppei Oguni, Takeshi Osada, Toshihiko Takeuchi
  • Patent number: 11899478
    Abstract: A low-power semiconductor device is provided. A retention transistor is provided between a control circuit and an output transistor. An output terminal of the control circuit is electrically connected to one of a source and a drain of the retention transistor, and the other of the source and the drain of the retention transistor is electrically connected to a gate of the output transistor. A node to which the other of the source and the drain of the retention transistor and the gate of the output transistor are electrically connected is a retention node. When the retention transistor is in an on state, a potential corresponding to a potential output from the control circuit is written to the retention node. Then, when the retention transistor is in an off state, the potential of the retention node is retained. Thus, a gate potential of the output transistor can be kept at a constant value even when the control circuit is off.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Keita Sato, Yuto Yakubo, Yoshiaki Oikawa, Shunpei Yamazaki
  • Patent number: 11899311
    Abstract: A low-resolution image is displayed at high resolution and power consumption is reduced. Resolution is made higher by super-resolution processing. Then, display is performed with the luminance of a backlight controlled by local dimming after the super-resolution processing. By controlling the luminance of the backlight, power consumption can be reduced. Further, by performing the local dimming after the super-resolution processing, accurate display can be performed.
    Type: Grant
    Filed: December 27, 2022
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 11899296
    Abstract: A semiconductor device including a large display portion with improved portability is provided. The display device includes a first display panel, a second display panel, and an adhesive layer. The area of the second display panel is larger than the area of the first display panel. The first display panel includes a first substrate, a second substrate, and a reflective liquid crystal element and a first transistor each positioned between the first substrate and the second substrate. The second display panel includes a first resin layer having flexibility, a second resin layer having flexibility, and a light-emitting element and a second transistor each positioned between the first resin layer and the second resin layer. The liquid crystal element has a function of reflecting light toward the second substrate side. The light-emitting element has a function of emitting light toward the second resin layer side.
    Type: Grant
    Filed: August 17, 2022
    Date of Patent: February 13, 2024
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shingo Eguchi, Hideaki Kuwabara, Kazune Yokomizo
  • Patent number: 11901548
    Abstract: A positive electrode active material, which has a high capacity and excellent charge and discharge cycle performance, for a lithium-ion secondary battery is provided. Alternatively, a positive electrode active material that inhibits a decrease in capacity in charge and discharge cycles when used in a lithium-ion secondary battery is provided. Alternatively, a high-capacity secondary battery is provided. Alternatively, a highly safe or reliable secondary battery is provided. The positive electrode active material contains a first substance including a first crack and a second substance positioned inside the first crack. The first substance contains one or more of cobalt, manganese, and nickel, lithium, oxygen, magnesium, and fluorine. The second substance contains phosphorus and oxygen.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazuhito Machikawa, Yohei Momma, Teruaki Ochiai, Mayumi Mikami
  • Patent number: 11899328
    Abstract: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.
    Type: Grant
    Filed: November 28, 2022
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuharu Hosaka, Yukinori Shima, Kenichi Okazaki, Shunpei Yamazaki
  • Patent number: 11900721
    Abstract: A novel electronic device is provided. An electronic device capable of executing various types of processing by simple operation is provided. An electronic device with a high security level is provided. The electronic device includes a control portion, a detection portion, and a memory portion. The detection portion has a function of detecting touch operation and a function of obtaining fingerprint data on a touching finger. The memory portion has a function of retaining fingerprint data on a plurality of finger registered in advance.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Kubota, Koji Kusunoki
  • Patent number: 11901460
    Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes first and second transistors and first and second capacitors. Each of the first and second transistors includes a gate insulator and a gate electrode over an oxide. Each of the first and second capacitors includes a conductor, a dielectric over the conductor, and the oxide. The first and second transistors are provided between the first capacitor and the second capacitor. One of a source and a drain of the first transistor is also used as one of a source and a drain of the second transistor. The other of the source and the drain of the first transistor is also used as one electrode of the first capacitor. The other of the source and the drain of the second transistor is also used as one electrode of the second capacitor. The channel lengths of the first and second transistors are larger than the lengths in a direction parallel to short sides of fourth and fifth conductors.
    Type: Grant
    Filed: March 30, 2022
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Hideomi Suzawa
  • Patent number: 11903227
    Abstract: A light-emitting element containing a fluorescent material and having high emission efficiency is provided. The light-emitting element contains the fluorescent material and a host material. The host material contains a first organic compound and a second organic compound. The first organic compound and the second organic compound can form an exciplex. The minimum value of a distance between centroids of the fluorescent material and at least one of the first organic compound and the second organic compound is 0.7 nm or more and 5 nm or less.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunsuke Hosoumi, Takahiro Ishisone, Tatsuyoshi Takahashi, Satoshi Seo
  • Patent number: 11901377
    Abstract: Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor. One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.
    Type: Grant
    Filed: January 12, 2023
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Atsushi Umezaki
  • Patent number: 11901485
    Abstract: An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.
    Type: Grant
    Filed: May 24, 2022
    Date of Patent: February 13, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryo Arasawa, Hideaki Shishido
  • Publication number: 20240047774
    Abstract: One embodiment of the present invention is to provide a highly safe monitoring system for a secondary battery which ensures safety by warning a user when detecting an abnormality in the secondary battery, for example, when detecting a phenomenon that impairs safety of the secondary battery in an early stage. The monitoring system uses an imaging device which captures images of an external view of the secondary battery. Furthermore, for facilitating an abnormality detection, temperature sensitive paint is either sprayed or applied on at least part of a surface of an exterior body of the secondary battery. In addition, a light source for irradiating the temperature sensitive paint with light is also provided. With this structure, the abnormal portion can emit light (or exhibit a color) in the case where abnormal heat generation occurs locally, whereby the imaging device can distinguish an abnormal portion from image data by the imaging device.
    Type: Application
    Filed: December 2, 2021
    Publication date: February 8, 2024
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi OSADA, Yosuke TSUKAMOTO, Takayuki IKEDA
  • Publication number: 20240047583
    Abstract: A semiconductor device with stable electrical characteristics is provided. Alternatively, a semiconductor device having normally-off electrical characteristics is provided. A semiconductor device includes a gate electrode, a gate insulator, and an oxide semiconductor, the oxide semiconductor contains fluorine in a channel formation region, and a fluorine concentration in the channel formation region is higher than or equal to 1×1020 atoms/cm3 and lower than or equal to 1×1022 atoms/cm3. Note that fluorine is added by an ion implantation method.
    Type: Application
    Filed: October 10, 2023
    Publication date: February 8, 2024
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Kosei NODA
  • Patent number: 11893299
    Abstract: An electronic device including a housing, a display panel with a flexible substrate, and a flexible printed circuit, in which the housing comprises a flat surface and a side surface comprising a curved region, the display panel comprises a first region that overlaps with the flat surface and a second region that overlaps with the side surface, the display panel comprises a convex portion that comprises a region overlapping with a flexible printed circuit, and the display panel comprises a display portion in the first region and the second region.
    Type: Grant
    Filed: March 9, 2022
    Date of Patent: February 6, 2024
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yoshiharu Hirakata, Shunpei Yamazaki