Patents Assigned to Semiconductor Energy Laboratory Co., Ltd.
  • Publication number: 20210139445
    Abstract: A novel organic compound is provided. Alternatively, an organic compound that exhibits light emission with favorable chromaticity is provided. Alternatively, an organic compound that exhibits blue light emission with favorable chromaticity is provided. Alternatively, a light-emitting device with favorable emission efficiency is provided. Alternatively, an organic compound having a high carrier-transport property is provided. Alternatively, an organic compound with favorable reliability is provided. An organic compound having at least one amino group in which any one of a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted dibenzothiophenyl group, and a substituted or unsubstituted carbazolyl group is bonded to any one of a substituted or unsubstituted naphthobisbenzofuran skeleton, a substituted or unsubstituted naphthobisbenzothiophene skeleton, and a substituted or unsubstituted naphthobenzothienobenzofuran skeleton is provided.
    Type: Application
    Filed: April 30, 2019
    Publication date: May 13, 2021
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kyoko TAKEDA, Hiroshi KADOMA, Yusuke TAKITA, Tsunenori SUZUKI, Satoshi SEO
  • Publication number: 20210143404
    Abstract: A method for manufacturing a lithium-ion secondary battery more safely at a lower cost is provided. A method for manufacturing a positive electrode for a secondary battery includes a step of forming slurry by mixing graphene oxide, a binder, and a positive electrode active material in a solvent containing water; a step of applying the slurry on a positive electrode current collector; and a step of reducing graphene oxide by at least one of chemical reduction and thermal reduction. As a reducing agent for the chemical reduction, ascorbic acid can be used.
    Type: Application
    Filed: November 2, 2020
    Publication date: May 13, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Mayumi MIKAMI, Kazuhei NARITA, Teruaki OCHIAI, Yumiko YONEDA
  • Patent number: 11003986
    Abstract: To provide a semiconductor device which can execute the product-sum operation. The semiconductor device includes a first memory cell, a second memory cell, and an offset circuit. First analog data is stored in the first memory cell, and reference analog data is stored in the second memory cell. The first memory cell and the second memory cell supply a first current and a second current, respectively, when a reference potential is applied as a selection signal. The offset circuit has a function of supplying a third current corresponding to a differential current between the first current and the second current. In the semiconductor device, the first memory and the second memory supply a fourth current and a fifth current, respectively, when a potential corresponding to second analog data is applied as a selection signal.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yoshiyuki Kurokawa
  • Patent number: 11004374
    Abstract: A low-power display device in which an operation method is optimized in accordance with the resolution and the frame frequency of a content is provided. The display device includes a display unit and an image receiving apparatus. In the case where the resolution of a content is lower than the resolution that can be displayed by the display device, a source driver and a gate driver included in the display unit output signals to a plurality of source lines and gate lines, and the source driver and the gate driver are operated at lower operation frequencies. Furthermore, the power supply voltages of the logic circuit portions included in the source driver and the gate driver are lowered.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiyuki Kurokawa, Kei Takahashi, Kensuke Yoshizumi, Shunpei Yamazaki
  • Patent number: 11004869
    Abstract: A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kensuke Yoshizumi
  • Patent number: 11004727
    Abstract: A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An electrode including the transistor is provided. A novel electrode is provided. The electrode includes a first conductive layer containing a metal, an insulating layer, and a second conductive layer. The insulating layer is formed over the first conductive layer. A mask layer is formed over the insulating layer. The insulating layer is etched using plasma with the mask layer used as a mask, whereby an opening is formed in the insulating layer so as to reach the first conductive layer. Plasma treatment is performed on at least the opening in an oxygen atmosphere. By the plasma treatment, a metal-containing oxide is formed on the first conductive layer in the opening. The oxide is removed, and then the second conductive layer is formed in the opening.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Motomu Kurata, Shinya Sasagawa, Ryota Hodo, Yuta Iida, Satoru Okamoto
  • Patent number: 11004961
    Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshihiko Takeuchi, Naoto Yamade, Hiroshi Fujiki, Tomoaki Moriwaka, Shunsuke Kimura
  • Patent number: 11004983
    Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Kosei Noda, Kouhei Toyotaka, Kazunori Watanabe, Hikaru Harada
  • Patent number: 11005123
    Abstract: The adhesion between metal foil serving as a current collector and a negative electrode active material is increased to enable long-term reliability. An electrode active material layer (including a negative electrode active material or a positive electrode active material) is formed over a base, a metal film is formed over the electrode active material layer by sputtering, and then the base and the electrode active material layer are separated at the interface therebetween; thus, an electrode is formed. The electrode active material particles in contact with the metal film are bonded by being covered with the metal film formed by the sputtering. The electrode active material is used for at least one of a pair of electrodes (a negative electrode or a positive electrode) in a lithium-ion secondary battery.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Minoru Takahashi
  • Patent number: 11005071
    Abstract: An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.
    Type: Grant
    Filed: April 16, 2020
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kaoru Hatano
  • Patent number: 11004925
    Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
    Type: Grant
    Filed: May 12, 2020
    Date of Patent: May 11, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
  • Publication number: 20210134801
    Abstract: An electronic device including a semiconductor device capable of intermittent driving is provided. The electronic device includes a semiconductor device, and the semiconductor device includes a current mirror circuit, a bias circuit, and first to third transistors. The current mirror circuit includes a first output terminal and a second output terminal, and the current mirror circuit is electrically connected to a power supply line through the first transistor. The current mirror circuit has a function of outputting current corresponding to a potential of the first output terminal from the first output terminal and the second output terminal. The bias circuit includes a current source circuit and a current sink circuit, the current source circuit is electrically connected to the second output terminal through the second transistor, and the current sink circuit is electrically connected to the second output terminal through the third transistor.
    Type: Application
    Filed: August 27, 2018
    Publication date: May 6, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shintaro HARADA, Tatsunori INOUE, Yoshiyuki KUROKAWA, Shunpei YAMAZAKI
  • Publication number: 20210135010
    Abstract: A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.
    Type: Application
    Filed: September 3, 2020
    Publication date: May 6, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Hajime KIMURA, Hitoshi KUNITAKE
  • Publication number: 20210134860
    Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.
    Type: Application
    Filed: May 16, 2018
    Publication date: May 6, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takayuki IKEDA, Yoshiyuki KUROKAWA, Shintaro HARADA, Hidetomo KOBAYASHI, Roh YAMAMOTO, Kiyotaka KIMURA, Takashi NAKAGAWA, Yusuke NEGORO
  • Patent number: 10998449
    Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+?Ga1-?O3(ZnO)m (0<?<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: May 4, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Takahashi, Kengo Akimoto, Shunpei Yamazaki
  • Patent number: 10998341
    Abstract: A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: May 4, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 10996524
    Abstract: A display device with low power consumption and high display quality is provided. The display device includes first and second electrodes. One pixel includes a region in which the distance between the first electrode and the second electrode is constant and a region in which the distance varies; this structure allows the switching operation of liquid crystal to start in a predetermined region, thereby improving the stability of the operation of the liquid crystal. A pixel region is divided into two regions in which the liquid crystals are aligned in the two respective directions when switching is performed, whereby viewing angle characteristics are improved. Furthermore, the supply of a potential to a third electrode suppresses alignment disorder of the liquid crystal and improves the display quality.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: May 4, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yusuke Kubota, Daisuke Kubota
  • Patent number: 10998141
    Abstract: A mixture of amorphous PAHs and at least one of a carrier ion storage metal, a Sn compound, a carrier ion storage alloy, a metal compound, Si, Sb, and SiO2 is used as the negative electrode active material. The theoretical capacity of amorphous PAHs greatly exceeds that of a graphite based carbon material. Thus, the use of amorphous PAHs enables the negative electrode active material to have a higher capacity than in the case of using the graphite-based carbon material. Further, addition of at least one of the carrier ion storage metal, the Sn compound, the carrier ion storage alloy, the metal compound, Si, Sb, and SiO2 to the amorphous PAHs enables the negative electrode active material to have a higher capacity than the case of only using the amorphous PAHs.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: May 4, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yumiko Saito, Rie Yokoi, Mayumi Mikami
  • Patent number: 10998447
    Abstract: A semiconductor device is provided in which the power consumption can be reduced by reducing the driving voltage and the on-state current can be increased in a period in which a transistor having an extremely low off-state current is brought into an electrically floating state. The semiconductor device comprises a memory cell, a first circuit, and a second circuit. The memory cell includes a first transistor. The first transistor includes a first semiconductor layer, a first gate electrode, and a first back gate electrode. The first gate electrode is connected to a word line. The first back gate electrode is connected to a back gate line. The first circuit supplies a signal for controlling the conduction state of the first transistor to the word line. The second circuit supplies a voltage for controlling the threshold voltage of the first transistor to the back gate line.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: May 4, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Onuki, Kiyoshi Kato, Tomoaki Atsumi
  • Patent number: 10998512
    Abstract: A power saving system using a plurality of flexible display devices placed on various places is provided. A structure of a bendable portion in a display device is improved. Specifically, a wiring partly including a metal nanoparticle is used. Openings are formed in an insulating layer so that the wiring becomes substantially longer by meandering in cross section. When a plurality of openings are formed and aligned, a portion that is easy to bend is formed along the line where they are aligned. A plurality of display panels are used for one display portion. The flexible display portion can be provided on a surface, specifically, a curved surface of furniture such as a chair or a sofa.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: May 4, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hideaki Kuwabara