Patents Assigned to Semiconductor Energy Laboratory Co., Ltd.
  • Patent number: 10700156
    Abstract: In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 10699794
    Abstract: An electronic device applicable to an artificial neuron network. The electronic device includes a first circuit, a second circuit, and first to sixth wirings. The first circuit includes a first transistor, a second transistor, and a capacitor. The second circuit includes a third transistor. A gate of the third transistor is electrically connected to the third wiring. The capacitor capacitively couples the third wiring and the gate of the second transistor. The first circuit is capable of storing a weight as an analog value. The first transistor is typically an oxide semiconductor transistor.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takayuki Ikeda, Yoshiyuki Kurokawa
  • Patent number: 10699628
    Abstract: An object is to provide a display system with a novel structure and a vehicle. The display system includes a display and a control IC. The control IC includes a frame memory, an arithmetic circuit, and a memory circuit. The display has a curved display surface. The frame memory has a function of holding first image data dedicated to displaying an image on a flat surface. The memory circuit has a function of storing shape data on the display. The arithmetic circuit has a function of converting first coordinates of the curved display surface into second coordinates of the flat surface included in the first image data, by performing arithmetic operation in accordance with the shape data. The arithmetic circuit has a function of outputting the first image data stored in the frame memory to the display as second image data on the basis of the second coordinates.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takayuki Ikeda
  • Patent number: 10700212
    Abstract: A semiconductor device includes a first insulator, a transistor over the first insulator, a second insulator over the transistor, and a third insulator over the second insulator. The transistor includes an oxide semiconductor. The amount of oxygen released from the second insulator when converted into oxygen molecules is larger than or equal to 1×1014 molecules/cm2 and smaller than 1×1016 molecules/cm2 in thermal desorption spectroscopy at a surface temperature of a film of the second insulator of higher than or equal to 50° C. and lower than or equal to 500° C. The second insulator includes oxygen, nitrogen, and silicon.
    Type: Grant
    Filed: January 26, 2017
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromi Sawai, Akihisa Shimomura
  • Patent number: 10700106
    Abstract: A display device including a semiconductor element is provided.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Murakami, Masahiko Hayakawa, Shunpei Yamazaki
  • Patent number: 10700099
    Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode.
    Type: Grant
    Filed: August 22, 2019
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiroyuki Miyake, Hideaki Shishido, Jun Koyama
  • Patent number: 10699904
    Abstract: A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Kosei Noda, Yuichi Sato
  • Patent number: 10700215
    Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hajime Kimura, Kengo Akimoto, Masashi Tsubuku, Toshinari Sasaki
  • Patent number: 10700098
    Abstract: A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element. The pixel circuit includes a first element layer including a first transistor and a second element layer including a second transistor. A channel formation region of the first transistor includes silicon. The first transistor has a function of driving the light-emitting element. The second transistor functions as a switch. A channel formation region of the second transistor includes a metal oxide. The metal oxide functions as a semiconductor. The second element layer is provided over the first element layer.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kei Takahashi, Hiroyuki Miyake
  • Patent number: 10700291
    Abstract: A light-emitting element having high emission efficiency is provided. A light-emitting element having a low driving voltage is provided. A novel compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. A novel compound with a benzofuropyrimidine skeleton is provided. Also provided is a light-emitting element which includes the compound with the benzofuropyrimidine skeleton between a pair of electrodes.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hideko Inoue, Miki Kanamoto, Hiromi Seo, Satoshi Seo, Tatsuyoshi Takahashi, Tomoka Nakagawa
  • Patent number: 10698277
    Abstract: To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal display device includes a first electrode formed over an entire surface of one side of a substrate; a first insulating film formed over the first electrode; a thin film transistor formed over the first insulating film; a second insulating film formed over the thin film transistor; a second electrode formed over the second insulating film and having a plurality of openings; and a liquid crystal over the second electrode. The liquid crystal is controlled by an electric field between the first electrode and the second electrode.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hajime Kimura
  • Patent number: 10700288
    Abstract: A light-emitting element that contains a fluorescent compound, which has high efficiency is provided. A light-emitting element in which the proportion of delayed fluorescence to the total light emitted from the light-emitting element is higher than that in a conventional light-emitting element is provided. Emission efficiency of the light-emitting element containing a fluorescent compound can be improved by increasing the probability of TTA caused by an organic compound in an EL layer, converting energy of triplet excitons, which does not contribute to light emission, into energy of singlet excitons, and making the fluorescent compound emit light by energy transfer of the singlet excitons.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kunihiko Suzuki, Satoshi Seo, Harue Osaka, Tsunenori Suzuki, Naoaki Hashimoto, Kyoko Takeda
  • Patent number: 10700213
    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: June 30, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichiro Sakata, Takuya Hirohashi, Hideyuki Kishida
  • Publication number: 20200199135
    Abstract: A novel organic compound is provided. That is, a novel organic compound that is effective in improving the element characteristics and reliability is provided. The organic compound has a benzofuropyrimidine skeleton or a benzothienopyrimidine skeleton and is represented by General Formula (G1). Note that in General Formula (G1), Q represents oxygen or sulfur; a represents a substituted or unsubstituted arylene group having 6 to 13 carbon atoms; n represents an integer of 0 to 4; A1 represents a group including an aryl group or a heteroaryl group and having 6 to 100 carbon atoms; R1 to R4 independently represent any one of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 7 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 13 carbon atoms; and A2 represents a condensed ring.
    Type: Application
    Filed: June 12, 2018
    Publication date: June 25, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Miki KURIHARA, Tomoka HARA, Hideko YOSHIZUMI, Satomi WATABE, Hiromitsu KIDO, Satoshi SEO
  • Publication number: 20200204755
    Abstract: A semiconductor device with an arithmetic processing function is provided. In the semiconductor device, an imaging portion and an arithmetic portion are electrically connected to each other through an analog processing circuit 24. The imaging portion includes a pixel array 21 in which pixels 20 used for imaging and reference pixels 22 used for image processing are arranged in a matrix, and a row decoder 25. The arithmetic portion includes a memory element array 31 in which memory elements 30 and reference memory elements 32 are arranged in a matrix, an analog processing circuit 34, a row decoder 35, and a column decoder 36.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 25, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yoshiyuki Kurokawa
  • Publication number: 20200203394
    Abstract: A liquid crystal display device with high aperture ratio is provided. The liquid crystal display device includes a first conductive layer, a second conductive layer, and a liquid crystal element where a liquid crystal layer is positioned between a third conductive layer and a fourth conductive layer. The first to fourth conductive layers transmit visible light and include a region where the first to fourth conductive layers overlap with each other. The second conductive layer is positioned between the first conductive layer and the third conductive layer. An insulating layer is positioned between the first conductive layer and the second conductive layer. An insulating layer is positioned between the second conductive layer and the third conductive layer. Therefore, two capacitors each including the second conductive layer as an electrode are stacked. The two capacitors transmit light and overlap with the liquid crystal element; thus, aperture ratio can be increased.
    Type: Application
    Filed: March 3, 2020
    Publication date: June 25, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Hideaki SHISHIDO
  • Publication number: 20200203345
    Abstract: A first transistor, a second transistor, a capacitor, and first to third conductors are included. The first transistor includes a first gate, a source, and a drain. The second transistor includes a second gate, a third gate over the second gate, first and second low-resistance regions, and an oxide sandwiched between the second gate and the third gate. The capacitor includes a first electrode, a second electrode, and an insulator sandwiched therebetween. The first low-resistance region overlaps with the first gate. The first conductor is electrically connected to the first gate and is connected to a bottom surface of the first low-resistance region. The capacitor overlaps with the first low-resistance region. The second conductor is electrically connected to the drain. The third conductor overlaps with the second conductor and is connected to the second conductor and a side surface of the second low-resistance region.
    Type: Application
    Filed: August 29, 2018
    Publication date: June 25, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takanori MATSUZAKI, Yoshinobu ASAMI, Daisuke MATSUBAYASHI, Tatsuya ONUKI
  • Publication number: 20200203995
    Abstract: The transmission efficiency of a wireless power-feeding system is increased. A power-feeding device to be provided includes a power-feeding coil, a control device, a sensing device, and a moving device, in which the power-feeding coil has a function of generating a magnetic field, the control device is electrically connected to the power-feeding coil and the sensing device and has a function of determining a position of the power-feeding coil and a function of transmitting a position control signal, the moving device has a function of receiving the position control signal and a function of moving the power-feeding coil on the basis of the position control signal, the sensing device includes a first sensing coil and a second sensing coil, the first sensing coil has a function of generating a magnetic field, and the second sensing coil has a function of sensing a change in magnetic flux density.
    Type: Application
    Filed: July 4, 2018
    Publication date: June 25, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventor: Takeshi OSADA
  • Patent number: 10692452
    Abstract: A display device with favorable display quality is provided. A display portion where a plurality of pixels is arranged in a matrix is divided into Region A and Region B, i.e., regions on the upstream side and the downstream side of a scanning direction. A signal line for supplying an image signal is provided in each of Region A and Region B. Region A and Region B adjoin each other such that a boundary line showing the boundary between the regions is bent. Bending the boundary line suppresses formation of a stripe in a boundary portion. For example, in a given column, the total number of pixels electrically connected to a signal line in Region A is made different from the total number of pixels electrically connected to a signal line in Region B.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: June 23, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidetomo Kobayashi, Kei Takahashi, Shunpei Yamazaki
  • Patent number: 10693013
    Abstract: A minute transistor with low parasitic capacitance, high frequency characteristics, favorable electrical characteristics, stable electrical characteristics, and low off-state current is provided. A semiconductor device includes a semiconductor over a substrate, a source and a drain over the semiconductor, a first insulator over the source and the drain, a second insulator over the semiconductor, a third insulator in contact with a side surface of the first insulator and over the second insulator, and a gate over the third insulator. The semiconductor includes a first region overlapping with the source, a second region overlapping with the drain, and a third region overlapping with the gate. The length between a top surface of the third region of the semiconductor and a bottom surface of the gate is longer than the length between the first region and the third region.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: June 23, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Toriumi, Takashi Hamada, Tetsunori Maruyama, Yuki Imoto, Yuji Asano, Ryunosuke Honda, Shunpei Yamazaki