Patents Assigned to Sensor Electronics Technology, Inc.
-
Patent number: 9859461Abstract: A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. A light generating structure formed over the n-type semiconductor contact layer has a set of quantum wells and barriers configured to emit or absorb target radiation. An ultraviolet transparent semiconductor layer having a non-uniform thickness is formed over the light generating structure. A p-type contact semiconductor layer having a non-uniform thickness is formed over the ultraviolet transparent semiconductor layer.Type: GrantFiled: July 12, 2016Date of Patent: January 2, 2018Assignee: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Alexander Dobrinsky
-
Patent number: 9855352Abstract: A diffusive illuminator is provided. The diffusive illuminator includes a set of light sources and a light guiding structure including a plurality of layers. At least some of the layers can be formed of a fluoropolymer and at least one layer can be formed of a transparent fluid. The light guiding structure also includes an emission surface through which diffused light exits. The light guiding structure can further include diffusive elements associated with at least one of the plurality of layers. Each diffusive element can diffuse the light to within forty percent of Lambertian distribution. The diffusive elements can be arranged based on a desired uniformity of the diffused light at a target distance corresponding to a surface to be illuminated. The diffusive illuminator can emit ultraviolet light, and can be implemented as part of a disinfection system.Type: GrantFiled: September 14, 2015Date of Patent: January 2, 2018Assignee: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
-
Publication number: 20170373224Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.Type: ApplicationFiled: August 21, 2017Publication date: December 28, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
-
Publication number: 20170373222Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.Type: ApplicationFiled: August 28, 2017Publication date: December 28, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
-
Publication number: 20170368215Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.Type: ApplicationFiled: September 11, 2017Publication date: December 28, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Timothy James Bettles, Alexander Dobrinsky, Remigijus Gaska, Michael Shur
-
Publication number: 20170369335Abstract: A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. The ultraviolet transparent enclosure includes a material that is configured to prevent biofouling within the ultraviolet transparent enclosure. A set of ultraviolet radiation sources are located adjacent to the ultraviolet transparent enclosure and are configured to generate ultraviolet radiation towards the ultraviolet transparent enclosure.Type: ApplicationFiled: July 28, 2017Publication date: December 28, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Saulius Smetona, Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
-
Patent number: 9844608Abstract: A solution in which an ultraviolet radiation source is mounted on a flexible substrate is provided. The flexible substrate is capable of having a deformation curvature of at least 0.1 inverse meters. The flexible substrate may be incorporated within an existing enclosure or included in the enclosure. The flexible substrate can be utilized as part of a solution for disinfecting one or more items located within the enclosure. In this case, while the items are within the enclosure, ultraviolet radiation is generated and directed at the items. Wiring for the ultraviolet radiation source can be embedded within the flexible substrate and the flexible substrate can have at least one of: a wave-guiding structure, an ultraviolet absorbing surface, or an ultraviolet reflective surface. A control system can be utilized to manage generation of the ultraviolet radiation within the enclosure.Type: GrantFiled: June 30, 2015Date of Patent: December 19, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
-
Publication number: 20170352776Abstract: A semiconductor heterostructure for an optoelectronic device is disclosed. The semiconductor heterostructure includes at least one stress control layer within a plurality of semiconductor layers used in the optoelectronic device. Each stress control layer includes stress control regions separated from adjacent stress control regions by a predetermined spacing. The stress control layer induces one of a tensile stress and a compressive stress in an adjacent semiconductor layer.Type: ApplicationFiled: May 23, 2017Publication date: December 7, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov
-
Patent number: 9833526Abstract: A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window. An input unit can be located on the enclosure and configured to generate an electrical signal in response to pressure applied to the enclosure. A control unit can be configured to manage the ultraviolet radiation by monitoring the electrical signal generated by the input unit and controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources.Type: GrantFiled: February 25, 2015Date of Patent: December 5, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Igor Agafonov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska, Saulius Smetona
-
Publication number: 20170345968Abstract: A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. One or more of the barriers and/or quantum wells includes a fine structure region. The fine structure region includes a plurality of subscale features arranged in at least one of: a growth or a lateral direction.Type: ApplicationFiled: July 28, 2017Publication date: November 30, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Wenhong Sun, Alexander Dobrinsky, Maxim S. Shatalov, Jinwei Yang, Michael Shur, Remigijus Gaska
-
Publication number: 20170340761Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.Type: ApplicationFiled: June 13, 2017Publication date: November 30, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
-
Patent number: 9831382Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.Type: GrantFiled: December 3, 2012Date of Patent: November 28, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Michael Shur
-
Publication number: 20170338371Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.Type: ApplicationFiled: July 26, 2017Publication date: November 23, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
-
Publication number: 20170333583Abstract: Ultraviolet radiation is directed within an area at target wavelengths, target intensities, a target temporal distribution, and/or a target spatial distribution. The target attribute(s) of the ultraviolet radiation can correspond to at least one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, an ethylene decomposition operating configuration, and/or the like.Type: ApplicationFiled: August 7, 2017Publication date: November 23, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
-
Patent number: 9818826Abstract: A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more composite semiconductor layers. The composite semiconductor layer can include sub-layers of varying morphology, at least one of which can be formed by a group of columnar structures (e.g., nanowires). Another sub-layer in the composite semiconductor layer can be porous, continuous, or partially continuous.Type: GrantFiled: October 21, 2014Date of Patent: November 14, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Maxim S. Shatalov, Rakesh Jain, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
-
Publication number: 20170317003Abstract: A thermal management structure for a device is provided. The thermal management structure includes electroplated metal, which connects multiple contact regions for a first contact of a first type located on a first side of the device. The electroplated metal can form a bridge structure over a contact region for a second contact of a second type without contacting the second contact. The thermal management structure also can include a layer of insulating material located on the contact region of the second type, below the bridge structure.Type: ApplicationFiled: July 10, 2017Publication date: November 2, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Yuri Bilenko, Michael Shur, Remigijus Gaska
-
Publication number: 20170318632Abstract: A solid-state light source (SSLS) with an integrated electronic modulator is described. A device can include a SSLS having an active p-n junction region is formed within the SSLS for electron-hole pair recombination and light emission. the active p-n junction region can include a n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A pair of current supply electrodes can be formed to receive a drive current from a current supply source that drives the SSLS. A field-effect transistor (FET) modulator can be monolithically integrated with the SSLS for modulation thereof. The FET modulator can receive a modulation voltage from a modulation voltage source. The modulation voltage includes voltage pulses having a pulse amplitude and polarity to turn on and off current flowing through the FET modulator. These voltage pulses enable the FET modulator to control the drive current supplied to the SSLS.Type: ApplicationFiled: April 20, 2017Publication date: November 2, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Grigory Simin, Michael Shur, Alexander Dobrinsky
-
Publication number: 20170311553Abstract: A solution for illuminating plants is provided. An illustrative system can include: a set of visible light sources configured to emit visible radiation directed at the plant; a set of ultraviolet radiation sources configured to emit ultraviolet radiation directed at the plant; and a set of sensors, wherein at least one sensor is configured to detect a fluorescence emitted from the plant due to the ultraviolet radiation and a fluorescence emitted from the plant due to the visible radiation.Type: ApplicationFiled: April 27, 2017Publication date: November 2, 2017Applicant: Sensor Electronic Technology, Inc.Inventors: Alexander Dobrinsky, Michael Shur
-
Patent number: 9806226Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.Type: GrantFiled: September 6, 2016Date of Patent: October 31, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Remigijus Gaska, Maxim S. Shatalov, Michael Shur, Alexander Dobrinsky
-
Patent number: 9801965Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.Type: GrantFiled: April 14, 2015Date of Patent: October 31, 2017Assignee: Sensor Electronic Technology, Inc.Inventors: Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska