Patents Assigned to Sensor Electronics Technology, Inc.
  • Ultraviolet disinfection case
    Patent number: 9801965
    Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: October 31, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet water disinfection system
    Patent number: 9802840
    Abstract: A solution for treating a fluid, such as water, is provided. An ultraviolet transparency of a fluid can be determined before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates. In addition, various attributes of the disinfection chamber, such as the position of the inlet(s) and outlet(s), the shape of the disinfection chamber, and other attributes of the disinfection chamber can be utilized to create a turbulent flow of the fluid within the disinfection chamber to promote mixing and improve uniform ultraviolet exposure.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: October 31, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Igor Shturm, Saulius Smetona, Timothy James Bettles, Yuri Bilenko, Ignas Gaska, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Semiconductor device with low-conducting field-controlling element
    Patent number: 9806184
    Abstract: A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: October 31, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Deep Ultraviolet Light Emitting Diode
    Publication number: 20170309776
    Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).
    Type: Application
    Filed: July 10, 2017
    Publication date: October 26, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Remigijus Gaska, Jinwei Yang, Alexander Dobrinsky
  • Movable Ultraviolet Radiation Source
    Publication number: 20170303567
    Abstract: A solution for treating a surface with ultraviolet radiation is provided. A movable ultraviolet source is utilized to emit a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be treated. The movable ultraviolet source can be moved as necessary to directly irradiate any portion of the surface with radiation within the characteristic cross-sectional area of the beam of ultraviolet radiation. The movement can include, for example, rotational movement and/or repositioning the movable ultraviolet source with respect to the surface.
    Type: Application
    Filed: July 10, 2017
    Publication date: October 26, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Storage device including target UV illumination ranges
    Patent number: 9795699
    Abstract: Ultraviolet radiation is directed within an area at target wavelengths and/or target intensities. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: October 24, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Semiconductor heterostructure with stress management
    Patent number: 9799793
    Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: October 24, 2017
    Assignee: Sensor Electronics Technology, Inc.
    Inventors: Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • AAO-Based Light Guiding Structure and Fabrication Thereof
    Publication number: 20170299826
    Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.
    Type: Application
    Filed: June 26, 2017
    Publication date: October 19, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Metallic contact for optoelectronic semiconductor device
    Patent number: 9793439
    Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: October 17, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Lunev, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ohmic contact to semiconductor
    Patent number: 9793367
    Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: October 17, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur
  • Ultraviolet Illuminator for Footwear Treatment
    Publication number: 20170290937
    Abstract: An ultraviolet (UV) footwear illuminator for footwear treatment is disclosed. In one embodiment, the UV footwear illuminator includes an insert adapted for placement in an article of footwear. At least one UV radiation source is located in the insert and is configured to emit UV radiation in the footwear through a transparent window region formed in the insert. A control unit is configured to control at least one predetermined UV radiation characteristics associated with the radiation emitted from each UV radiation source. A power supply is configured to power each UV radiation source and the control unit.
    Type: Application
    Filed: June 26, 2017
    Publication date: October 12, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet Surface Illumination System
    Publication number: 20170290934
    Abstract: A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. The ultraviolet radiation from the set of ultraviolet radiation sources is directed towards a reflective surface located adjacent to the illuminator. The reflective surface can diffusively reflect at least 30% the ultraviolet radiation and the diffusive ultraviolet radiation can be within at least 40% of Lambertian distribution. A set of optical elements can be located between the illuminator and the reflective surface in order to direct the ultraviolet radiation towards at least 50% of the reflective surface.
    Type: Application
    Filed: April 4, 2017
    Publication date: October 12, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Emmanuel Lakios
  • Treatment Of Fluid Transport Conduit With Ultraviolet Radiation
    Publication number: 20170281812
    Abstract: An approach for treating a fluid transport conduit with ultraviolet radiation is disclosed. A light guiding unit, operatively coupled to a set of ultraviolet radiation sources, encloses the fluid transport conduit. The light guiding unit directs ultraviolet radiation emitted from the ultraviolet radiation sources to ultraviolet transparent sections on an outer surface of the fluid transport conduit. The emitted ultraviolet radiation passes through the ultraviolet transparent sections, penetrates the fluid transport conduit and irradiates the internal walls. A control unit adjusts a set of operating parameters of the ultraviolet radiation sources as a function of the removal of contaminants from the internal walls of the fluid transport conduit.
    Type: Application
    Filed: March 28, 2017
    Publication date: October 5, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur
  • Patterned Layer Design for Group III Nitride Layer Growth
    Publication number: 20170287698
    Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-Ill nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.
    Type: Application
    Filed: June 26, 2017
    Publication date: October 5, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Integrated Ultraviolet Analyzer
    Publication number: 20170284933
    Abstract: An integrated ultraviolet analyzer is described. The integrated ultraviolet analyzer can include one or more ultraviolet analyzer cells, each of which includes one or more ultraviolet photodetectors and one or more solid state light sources, which are monolithically integrated. The solid state light source can be operated to emit ultraviolet light, at least some of which passes through an analyzer active gap and irradiates a light sensing surface of the ultraviolet photodetector. A medium to be evaluated can be present in the analyzer active gap and affect the ultraviolet light as it passes there through, thereby altering an effect of the ultraviolet light on a ultraviolet photodetector.
    Type: Application
    Filed: March 28, 2017
    Publication date: October 5, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Alexander Dobrinsky
  • Adjustable Multi-Wavelength Lamp
    Publication number: 20170284866
    Abstract: An adjustable multi-wavelength lamp is described. The lamp can include a plurality of emitters. The emitters can include at least one ultraviolet emitter, at least one visible light emitter, and at least one infrared emitter. The lamp can include a control system for controlling operation of the plurality of emitters. The control system can be configured to selectively deliver power to any combination of one or more of the plurality of emitters to generate light approximating a target spectral distribution of intensity.
    Type: Application
    Filed: March 28, 2017
    Publication date: October 5, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Michael Shur, Alexander Dobrinsky
  • Superlattice structure
    Patent number: 9768349
    Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: September 19, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky
  • Ultraviolet reflective rough adhesive contact
    Patent number: 9768357
    Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: September 19, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Michael Shur, Grigory Simin
  • Optoelectronic Device with Modulation Doping
    Publication number: 20170263805
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
    Type: Application
    Filed: May 8, 2017
    Publication date: September 14, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Group III Nitride Heterostructure for Optoelectronic Device
    Publication number: 20170256672
    Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.
    Type: Application
    Filed: May 23, 2017
    Publication date: September 7, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska