Patents Assigned to Sensor Electronics Technology, Inc.
  • Non-uniform multiple quantum well structure
    Patent number: 9722139
    Abstract: A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. One or more of the barriers and/or quantum wells includes a fine structure region. The fine structure region includes a plurality of subscale features arranged in at least one of: a growth or a lateral direction.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: August 1, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Wenhong Sun, Alexander Dobrinsky, Maxim S Shatalov, Jinwei Yang, Michael Shur, Remigijus Gaska
  • Semiconductor Device with Improved Light Propagation
    Publication number: 20170207367
    Abstract: A semiconductor structure for use in fabricating a semiconductor device having improved light propagation is provided. The structure includes at least one layer transparent to radiation having a target wavelength relevant to operation of the semiconductor device. During operation of the semiconductor device, radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side. At least one of the first side or the second side comprises a profiled surface. The profiled surface includes a plurality of vacancies fabricated in the material of the layer. Each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength.
    Type: Application
    Filed: January 18, 2017
    Publication date: July 20, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur
  • Ultraviolet system for disinfection
    Patent number: 9707307
    Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: July 18, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Alexander Dobrinsky, Remigijus Gaska
  • Flexible Article for UV Disinfection
    Publication number: 20170197002
    Abstract: A device including a flexible substrate and an ultraviolet radiation system is disclosed. The ultraviolet radiation system can include at least one ultraviolet radiation source configured to emit ultraviolet radiation towards a surface to be disinfected, an ultraviolet transparent component configured to focus the ultraviolet radiation, and a control system configured to control the at least one ultraviolet radiation source. The device can include a hand article, such as a glove.
    Type: Application
    Filed: March 27, 2017
    Publication date: July 13, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • AAO-based light guiding structure and fabrication thereof
    Patent number: 9703055
    Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: July 11, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Deep ultraviolet light emitting diode
    Patent number: 9705032
    Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: July 11, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Remigijus Gaska, Jinwei Yang, Alexander Dobrinsky
  • Movable ultraviolet radiation source
    Patent number: 9700072
    Abstract: A solution for treating a surface with ultraviolet radiation is provided. A movable ultraviolet source is utilized to emit a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be treated. The movable ultraviolet source can be moved as necessary to directly irradiate any portion of the surface with radiation within the characteristic cross-sectional area of the beam of ultraviolet radiation. The movement can include, for example, rotational movement and/or repositioning the movable ultraviolet source with respect to the surface.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: July 11, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Medical Device with Radiation Delivery
    Publication number: 20170189711
    Abstract: Medical devices capable of delivering and/or sensing electromagnetic radiation within an organism body are described. Placement of a location for delivering and/or sending the electromagnetic radiation is done through the skin of the organism body. Devices described include a needle with a wave guiding structure configured to direct the electromagnetic radiation to/from a location within the organism body.
    Type: Application
    Filed: December 22, 2016
    Publication date: July 6, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Alexander Dobrinsky
  • Lateral/Vertical Semiconductor Device with Embedded Isolator
    Publication number: 20170194475
    Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.
    Type: Application
    Filed: March 21, 2017
    Publication date: July 6, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Mikhail Gaevski, Michael Shur, Remigijus Gaska
  • Solid-State Lighting Structure With Integrated Control
    Publication number: 20170196061
    Abstract: A solid-state light source (SSLS) structure with integrated control. In one embodiment, a SSLS control circuit can be integrated with a SSLS structure formed from a multiple of SSLSs. The SSLS control circuit controls the total operating current of the SSLS structure to within a predetermined total operating current limit by selectively limiting the current in individual SSLSs or in groups of SSLSs as each are turned on according to a sequential order. The SSLS control circuit limits the current in each of the individual SSLSs or groups of SSLSs as function of the saturation current of the SSLSs. In one embodiment, the individual SSLSs or groups of SSLSs has a turn on voltage corresponding to a voltage causing a preceding SSLS or group of SSLSs in the sequential order to saturate current.
    Type: Application
    Filed: December 21, 2016
    Publication date: July 6, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov
  • Heterostructure Including Anodic Aluminum Oxide Layer
    Publication number: 20170186905
    Abstract: A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. A filler material can penetrate at least some of the plurality of pores and directly contact the surface of the semiconductor structure. In an illustrative embodiment, multiple types of filler material at least partially fill the pores of the aluminum oxide layer.
    Type: Application
    Filed: August 19, 2016
    Publication date: June 29, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky
  • Device with Transparent and Higher Conductive Regions in Lateral Cross Section of Semiconductor Layer
    Publication number: 20170186910
    Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
    Type: Application
    Filed: March 13, 2017
    Publication date: June 29, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang
  • Ultraviolet illuminator for footwear treatment
    Patent number: 9687577
    Abstract: An ultraviolet (UV) footwear illuminator for footwear treatment is disclosed. In one embodiment, the UV footwear illuminator includes an insert adapted for placement in an article of footwear. At least one UV radiation source is located in the insert and is configured to emit UV radiation in the footwear through a transparent window region formed in the insert. A control unit is configured to control at least one predetermined UV radiation characteristics associated with the radiation emitted from each UV radiation source. A power supply is configured to power each UV radiation source and the control unit.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: June 27, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Semiconductor Heterostructure with Stress Management
    Publication number: 20170179335
    Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.
    Type: Application
    Filed: December 28, 2016
    Publication date: June 22, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Patterned layer design for group III nitride layer growth
    Patent number: 9680061
    Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: June 13, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur
  • Ultraviolet-Based Detection and Sterilization
    Publication number: 20170157276
    Abstract: A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. The object can comprise a protective suit, which is worn by a user and also can include ultraviolet sources for disinfecting air prior to the air entering the protective suit. The system can be implemented as a multi-tiered system for protecting the user and others from exposure to the contaminant and sterilizing the protective suit after exposure to an environment including the contaminant.
    Type: Application
    Filed: February 20, 2017
    Publication date: June 8, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska, Timothy James Bettles
  • Group III nitride heterostructure for optoelectronic device
    Patent number: 9660133
    Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.
    Type: Grant
    Filed: September 23, 2014
    Date of Patent: May 23, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ohmic contact to semiconductor layer
    Patent number: 9660043
    Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: May 23, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Mikhail Gaevski, Grigory Simin, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Lateral/vertical semiconductor device
    Patent number: 9660038
    Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and an electrode or a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: May 23, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Mikhail Gaevski, Michael Shur
  • Optoelectronic device with modulation doping
    Patent number: 9653631
    Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.
    Type: Grant
    Filed: September 3, 2014
    Date of Patent: May 16, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska