Patents Assigned to Sensor Electronics Technology, Inc.
  • Perforating Contact to Semiconductor Layer
    Publication number: 20170256623
    Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
    Type: Application
    Filed: May 22, 2017
    Publication date: September 7, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Mikhail Gaevski, Grigory Simin, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Multi wave sterilization system
    Patent number: 9750830
    Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: September 5, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Light Emitting Device for Emitting Diffuse Ultraviolet Light
    Publication number: 20170248744
    Abstract: A diffusive layer including a laminate of a plurality of transparent films is provided. At least one of the plurality of transparent films includes a plurality of diffusive elements with a concentration that is less than a percolation threshold. The plurality of diffusive elements are optical elements that diffuse light that is impinging on such element. The plurality of diffusive elements can be diffusively reflective, diffusively transmitting or combination of both. The plurality of diffusive elements can include fibers, grains, domains, and/or the like. The at least one film can also include a powder material for improving the diffusive emission of radiation and a plurality of particles that are fluorescent when exposed to radiation.
    Type: Application
    Filed: February 28, 2017
    Publication date: August 31, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur
  • Access Resistance Modulated Solid-State Light Source
    Publication number: 20170251533
    Abstract: A solid-state light source with built-in access resistance modulation is described. The light source can include an active region configured to emit electromagnetic radiation during operation of the light source. The active region can be formed at a p-n junction of a p-type side with a p-type contact and a n-type side with a n-type contact. The light source includes a control electrode configured to modulate an access resistance of an access region located on the p-type side and/or an access resistance of an access region located on the n-type side of the active region. The solid-state light source can be implemented in a circuit, which includes a voltage source that supplies a modulation voltage to the control electrode to modulate the access resistance(s).
    Type: Application
    Filed: February 28, 2017
    Publication date: August 31, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Grigory Simin
  • Disinfection of Grain using Ultraviolet Radiation
    Publication number: 20170245527
    Abstract: A system for irradiation of grain foods using one or more ultraviolet emitting sources is provided. The system includes an irradiation region in which the grain foods are irradiated by ultraviolet light. The system can include means for moving the grain foods through irradiation region, means for detecting the flow rate of the grain foods moving through irradiation region, and a control system for adjusting power provided to the ultraviolet emitting sources based on the flow rate of the grain foods.
    Type: Application
    Filed: February 28, 2017
    Publication date: August 31, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur
  • Ultraviolet Razor Blade Treatment
    Publication number: 20170245616
    Abstract: An ultraviolet razor blade treatment system for providing a cleaning treatment to a shaving razor is disclosed. The ultraviolet razor blade treatment system can include a shaving razor cleaning unit that has at least one ultraviolet radiation source and sensor to clean surfaces of the shaving razor for purposes of disinfection, sterilization, and/or sanitization.
    Type: Application
    Filed: February 28, 2017
    Publication date: August 31, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Emmanuel Lakios, Michael Shur, Alexander Dobrinsky
  • High-voltage normally-off field effect transistor with channel having multiple adjacent sections
    Patent number: 9748362
    Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: August 29, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Semiconductor layer including compositional inhomogeneities
    Patent number: 9748440
    Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: August 29, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
  • Device with inverted large scale light extraction structures
    Patent number: 9741899
    Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.
    Type: Grant
    Filed: June 2, 2015
    Date of Patent: August 22, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Semiconductor device with breakdown preventing layer
    Patent number: 9741802
    Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film or a low conductive film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film or the low conductive film. The conducting elements can vary in at least one of composition, doping, conductivity, size, thickness, shape, and distance from the device channel along a lateral length of the insulating film or the low conductive film, or in a direction that is perpendicular to the lateral length.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: August 22, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Semiconductor heterostructure with stress management
    Patent number: 9735315
    Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: August 15, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Daniel Billingsley, Robert M. Kennedy, Wenhong Sun, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Patterned Substrate Design for Layer Growth
    Publication number: 20170229612
    Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.
    Type: Application
    Filed: April 24, 2017
    Publication date: August 10, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska
  • Stress Relieving Semiconductor Layer
    Publication number: 20170229611
    Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
    Type: Application
    Filed: April 25, 2017
    Publication date: August 10, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska
  • Semiconductor Material Doping
    Publication number: 20170229610
    Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
    Type: Application
    Filed: April 24, 2017
    Publication date: August 10, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Remigijus Gaska, Jinwei Yang, Michael Shur, Alexander Dobrinsky
  • Storage device including target UV illumination ranges
    Patent number: 9724441
    Abstract: Ultraviolet radiation is directed within an area at target wavelengths, target intensities, a target temporal distribution, and/or a target spatial distribution. The target attribute(s) of the ultraviolet radiation can correspond to at least one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, an ethylene decomposition operating configuration, and/or the like.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: August 8, 2017
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Multi-Terminal Device Packaging
    Publication number: 20170221801
    Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.
    Type: Application
    Filed: April 17, 2017
    Publication date: August 3, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Michael Shur, Remigijus Gaska, Alexander Dobrinsky
  • Ultraviolet-Based Gas Sensor
    Publication number: 20170219479
    Abstract: A solution for evaluating a sample gas for a presence of a trace gas, such as ozone, is provided. The solution uses an ultraviolet source and an ultraviolet detector mounted in a chamber. The chamber can include reflecting walls and/or structures configured to guide ultraviolet light. A computer system can operate the ultraviolet source in a high power pulse mode and acquire data corresponding to an intensity of the ultraviolet radiation detected by the ultraviolet detector while a sample gas is present in the chamber. Using the data, the computer system can determine a presence and/or an amount of the trace gas in the sample gas.
    Type: Application
    Filed: April 17, 2017
    Publication date: August 3, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Method of Fabricating a Light Emitting Device with Optical Element
    Publication number: 20170219174
    Abstract: A solution for packaging an optoelectronic device by aligning an optical element with respect to the package is provided. After initial placement of the optical element on the device package, an emitted light pattern can be measured and compared to a target light pattern. Subsequently, the position of the optical element can be adjusted. The emitted light pattern can be repeatedly compared to the target light pattern until the emitted light pattern is within an acceptable range of error and the optical element can be secured to the device package.
    Type: Application
    Filed: January 31, 2017
    Publication date: August 3, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Igor Agafonov, Michael Shur, Alexander Dobrinsky
  • Curing Ultraviolet Sensitive Polymer Materials
    Publication number: 20170218208
    Abstract: An approach for curing ultraviolet sensitive polymer materials (e.g., polymer inks, coatings, and adhesives) using ultraviolet radiation is disclosed. The ultraviolet sensitive polymer materials curing can utilize ultraviolet light at different wavelength emissions arranged in a random, mixed or sequential arrangement. In one embodiment, an ultraviolet light C (UV-C) radiation emitter having a set of UV-C sources that emit UV-C radiation at a predetermined UV-C duration and intensity operate in conjunction with an ultraviolet light B (UV-B) radiation emitter having a set of UV-B sources configured to emit UV-B radiation at a predetermined UV-B duration and intensity and/or an ultraviolet light A (UV-A) radiation emitter having a set of UV-A sources configured to emit UV-A radiation at a predetermined UV-A duration and intensity, to cure the ultraviolet sensitive polymer materials.
    Type: Application
    Filed: February 2, 2017
    Publication date: August 3, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Timothy James Bettles, Michael Shur, Alexander Dobrinsky, Maxim S. Shatalov
  • Integrated Optical Modulator
    Publication number: 20170219854
    Abstract: An optical modulator is provided. The optical modulator can include a wave guide layer made of an electro-optical material with two or more electrodes directly contacting the wave guide layer. Each electrode can include an associated optical wave guide region, which is located within the wave guide layer. Each optical wave guide region is aligned with a lateral location corresponding to an electric field peak, which can be generated during operation of the optical modulator in a circuit, associated with the corresponding electrode. One or more voltage sources in a circuit can be operated to generate an electric field peak at one or more of the electrodes.
    Type: Application
    Filed: January 31, 2017
    Publication date: August 3, 2017
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur