Patents Assigned to Sensor Electronics Technology, Inc.
  • Device with Inverted Large Scale Light Extraction Structures
    Publication number: 20160049551
    Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.
    Type: Application
    Filed: June 2, 2015
    Publication date: February 18, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ohmic contact to semiconductor
    Patent number: 9263538
    Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: February 16, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur
  • High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections
    Patent number: 9263533
    Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.
    Type: Grant
    Filed: September 19, 2012
    Date of Patent: February 16, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Semiconductor device with multiple space-charge control electrodes
    Patent number: 9256240
    Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: February 9, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Lateral/Vertical Semiconductor Device
    Publication number: 20160035871
    Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
    Type: Application
    Filed: October 16, 2015
    Publication date: February 4, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Mikhail Gaevski, Michael Shur, Remigijus Gaska
  • Packaging for Ultraviolet Optoelectronic Device
    Publication number: 20160027970
    Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.
    Type: Application
    Filed: May 11, 2015
    Publication date: January 28, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Saulius Smetona, Alexander Dobrinsky, Michael Shur
  • Reflective Transparent Optical Chamber
    Publication number: 20150338336
    Abstract: A chamber configured to increase an intensity of target radiation emitted therein is provided. The chamber includes an enclosure at least partially formed by a set of transparent walls. Each transparent wall can comprise a first material transparent to the target radiation and having a refractive index greater than 1.1 for the target radiation. The outer surface of the set of transparent walls can include a set of cavities, each cavity comprising an approximately prismatic void. Additionally, a medium located adjacent to an outer surface of the set of transparent walls can have a refractive index within approximately one percent of a refractive index of a vacuum for the target radiation.
    Type: Application
    Filed: July 31, 2015
    Publication date: November 26, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Semiconductor device with breakdown preventing layer
    Patent number: 9190510
    Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film. The conducting elements can be configured to split a high electric field spike otherwise present in the high-voltage surface region during operation of the device into multiple much smaller spikes.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: November 17, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Ultraviolet system for disinfection
    Patent number: 9179703
    Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: November 10, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Deep ultraviolet light emitting diode
    Patent number: 9184339
    Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: November 10, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Maxim S Shatalov, Michael Shur, Alexander Dobrinsky
  • Ultraviolet reflective contact
    Patent number: 9184346
    Abstract: A contact including an ohmic layer and a reflective layer located on the ohmic layer is provided. The ohmic layer is transparent to radiation having a target wavelength, while the reflective layer is at least approximately eighty percent reflective of radiation having the target wavelength. The target wavelength can be ultraviolet light, e.g., having a wavelength within a range of wavelengths between approximately 260 and approximately 360 nanometers.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: November 10, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Lunev, Alexander Dobrinsky, Maxim S. Shatalov, Remigijus Gaska, Michael Shur
  • Low-resistance electrode design
    Patent number: 9178025
    Abstract: A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and/or one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: November 3, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Lateral/vertical semiconductor device
    Patent number: 9166048
    Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and electrode located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
    Type: Grant
    Filed: September 16, 2013
    Date of Patent: October 20, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Mikhail Gaevski, Michael Shur, Remigijus Gaska
  • Chromium/Titanium/Aluminum-based Semiconductor Device Contact
    Publication number: 20150287602
    Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.
    Type: Application
    Filed: June 23, 2015
    Publication date: October 8, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Xuhong Hu, Michael Shur, Mikhail Gaevski
  • Emitting device with improved extraction
    Patent number: 9142741
    Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: September 22, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Electronic gadget disinfection
    Patent number: 9138499
    Abstract: A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. While the electronic device is within the ultraviolet absorbent case, ultraviolent radiation is directed at the electronic device. A monitoring and control system monitors a plurality of attributes for the electronic device, which can include: a frequency of usage for the device, a biological activity at a surface of the device, and a disinfection schedule history for the device. Furthermore, the monitoring and control system can detect whether the device is being used. Based on the monitoring, the monitoring and control system controls the ultraviolet radiation directed at the electronic device.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: September 22, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet Surface Illuminator
    Publication number: 20150250907
    Abstract: A solution for disinfecting a screen of an item using ultraviolet radiation is provided. The solution can provide an electronic device including a screen utilized by a user of the electronic device. The screen can be an ultraviolet transparent screen that covers at least some of the internal portion of the electronic device and a set of ultraviolet radiation sources can be located adjacent to the transparent screen. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed towards an external surface of the ultraviolet transparent screen. The electronic device can further include a monitoring and control system, which can manage the ultraviolet radiation generation by monitoring a set of attributes relating to the external surface of the screen and controlling, based on the monitoring, ultraviolet radiation directed at the external surface of the screen.
    Type: Application
    Filed: March 6, 2015
    Publication date: September 10, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Alexander Dobrinsky, Michael Shur
  • Semiconductor Structure with Stress-Reducing Buffer Structure
    Publication number: 20150243841
    Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.
    Type: Application
    Filed: February 22, 2015
    Publication date: August 27, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Two terminal packaging
    Patent number: 9117983
    Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: August 25, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Michael Shur, Remigijus Gaska
  • Patterned layer design for group III nitride layer growth
    Patent number: 9105792
    Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: August 11, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska