Patents Assigned to Sensor Electronics Technology, Inc.
  • Semiconductor Device with Breakdown Preventing Layer
    Publication number: 20160111505
    Abstract: A semiconductor device with a breakdown preventing layer is provided. The breakdown preventing layer can be located in a high-voltage surface region of the device. The breakdown preventing layer can include an insulating film or a low conductive film with conducting elements embedded therein. The conducting elements can be arranged along a lateral length of the insulating film or the low conductive film. The conducting elements can vary in at least one of composition, doping, conductivity, size, thickness, shape, and distance from the device channel along a lateral length of the insulating film or the low conductive film, or in a direction that is perpendicular to the lateral length.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 21, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • High-Voltage Normally-Off Field Effect Transistor With Channel Having Multiple Adjacent Sections
    Publication number: 20160111497
    Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.
    Type: Application
    Filed: December 30, 2015
    Publication date: April 21, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Ohmic Contact to Semiconductor
    Publication number: 20160104784
    Abstract: A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.
    Type: Application
    Filed: December 17, 2015
    Publication date: April 14, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur, Jinwei Yang, Alexander Dobrinsky, Maxim S. Shatalov
  • Light emitting heterostructure with partially relaxed semiconductor layer
    Patent number: 9312428
    Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: April 12, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Metallic contact for optoelectronic semiconductor device
    Patent number: 9312448
    Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: April 12, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexander Lunev, Maxim S Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Semiconductor device with multiple space-charge control electrodes
    Patent number: 9312347
    Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: April 12, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Movable Ultraviolet Radiation Source
    Publication number: 20160088868
    Abstract: A solution for treating a surface with ultraviolet radiation is provided. A movable ultraviolet source is utilized to emit a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be treated. The movable ultraviolet source can be moved as necessary to directly irradiate any portion of the surface with radiation within the characteristic cross-sectional area of the beam of ultraviolet radiation. The movement can include, for example, rotational movement and/or repositioning the movable ultraviolet source with respect to the surface.
    Type: Application
    Filed: September 30, 2015
    Publication date: March 31, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • PATTERNED SUBSTRATE DESIGN FOR LAYER GROWTH
    Publication number: 20160093771
    Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.
    Type: Application
    Filed: March 17, 2015
    Publication date: March 31, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska
  • Ohmic Contact to Semiconductor
    Publication number: 20160093702
    Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
    Type: Application
    Filed: December 1, 2015
    Publication date: March 31, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur
  • AAO-Based Light Guiding Structure and Fabrication Thereof
    Publication number: 20160077292
    Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.
    Type: Application
    Filed: September 14, 2015
    Publication date: March 17, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet Illuminator for Footwear Treatment
    Publication number: 20160074547
    Abstract: An ultraviolet (UV) footwear illuminator for footwear treatment is disclosed. In one embodiment, the UV footwear illuminator includes an insert adapted for placement in an article of footwear. At least one UV radiation source is located in the insert and is configured to emit UV radiation in the footwear through a transparent window region formed in the insert. A control unit is configured to control at least one predetermined UV radiation characteristics associated with the radiation emitted from each UV radiation source. A power supply is configured to power each UV radiation source and the control unit.
    Type: Application
    Filed: September 14, 2015
    Publication date: March 17, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet reflective rough adhesive contact
    Patent number: 9287449
    Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: March 15, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Maxim S. Shatalov, Alexander Lunev, Alexander Dobrinsky, Jinwei Yang, Michael Shur
  • Semiconductor material doping
    Patent number: 9287442
    Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 15, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S Shatalov, Remigijus Gaska, Jinwei Yang, Michael Shur, Alexander Dobrinsky
  • Deep ultraviolet light emitting diode
    Patent number: 9287455
    Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: March 15, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Remigijus Gaska, Jinwei Yang
  • Semiconductor layer including compositional inhomogeneities
    Patent number: 9281441
    Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: March 8, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska
  • Ultraviolet System for Disinfection
    Publication number: 20160058020
    Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.
    Type: Application
    Filed: November 10, 2015
    Publication date: March 3, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Alexander Dobrinsky, Remigijus Gaska
  • Packaging for Ultraviolet Optoelectronic Device
    Publication number: 20160064631
    Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.
    Type: Application
    Filed: November 11, 2015
    Publication date: March 3, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Saulius Smetona, Alexander Dobrinsky, Michael Shur, Mikhail Gaevski
  • Deep Ultraviolet Light Emitting Diode
    Publication number: 20160064601
    Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 3, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Maxim S. Shatalov, Michael Shur, Alexander Dobrinsky
  • Ohmic contact to semiconductor
    Patent number: 9269788
    Abstract: A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: February 23, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur, Jinwei Yang, Alexander Dobrinsky, Maxim S Shatalov
  • Light emitting diodes for simulation of missile signatures
    Patent number: 9267770
    Abstract: An emitting structure for simulating an irradiance signature of a missile is provided. The emitting structure includes one or more radiation sources, each of which includes at least one ultraviolet radiation source and at least one infrared radiation source. The emitting structure also includes a spherical shell and a mechanism for positioning the radiation source(s) along a three dimensional boundary of the spherical shell. The emitting structure can locate and operate one of the radiation sources to simulate the irradiance signature of the missile.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: February 23, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Alexander Dobrinsky, Maxim Shatalov, Michael Shur