Patents Assigned to Sensor Electronics Technology, Inc.
  • Lateral/vertical semiconductor device
    Patent number: 9391189
    Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.
    Type: Grant
    Filed: October 16, 2015
    Date of Patent: July 12, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Mikhail Gaevski, Michael Shur, Remigijus Gaska
  • Semiconductor Structure with Inhomogeneous Regions
    Publication number: 20160197228
    Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
    Type: Application
    Filed: March 14, 2016
    Publication date: July 7, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska
  • Deep Ultraviolet Light Emitting Diode
    Publication number: 20160197233
    Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).
    Type: Application
    Filed: March 14, 2016
    Publication date: July 7, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Remigijus Gaska, Jinwei Yang, Alexander Dobrinsky
  • Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
    Patent number: 9385271
    Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
    Type: Grant
    Filed: May 26, 2015
    Date of Patent: July 5, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang
  • Strain-Control Heterostructure Growth
    Publication number: 20160190387
    Abstract: A solution for fabricating a group III nitride heterostructure and/or a corresponding device is provided. The heterostructure can include a nucleation layer, which can be grown on a lattice mismatched substrate using a set of nucleation layer growth parameters. An aluminum nitride layer can be grown on the nucleation layer using a set of aluminum nitride layer growth parameters. The respective growth parameters can be configured to result in a target type and level of strain in the aluminum nitride layer that is conducive for growth of additional heterostructure layers resulting in strains and strain energies not exceeding threshold values which can cause relaxation and/or dislocation formation.
    Type: Application
    Filed: December 30, 2015
    Publication date: June 30, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Wenhong Sun, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur, Remigijus Gaska
  • Semiconductor Device with Low-Conducting Field-controlling Element
    Publication number: 20160181410
    Abstract: A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device.
    Type: Application
    Filed: February 25, 2016
    Publication date: June 23, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Ultraviolet Reflective Rough Adhesive Contact
    Publication number: 20160172544
    Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
    Type: Application
    Filed: February 12, 2016
    Publication date: June 16, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Michael Shur, Grigory Simin
  • Simulation of Missile Signatures
    Publication number: 20160169636
    Abstract: An emitting structure for simulating an irradiance signature of a missile is provided. The emitting structure includes one or more radiation sources, each of which includes at least one ultraviolet radiation source and at least one infrared radiation source. The emitting structure also includes a spherical shell and a mechanism for positioning the radiation source(s) along a three dimensional boundary of the spherical shell. The emitting structure can locate and operate one of the radiation sources to simulate the irradiance signature of the missile.
    Type: Application
    Filed: February 22, 2016
    Publication date: June 16, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
  • Semiconductor material doping
    Patent number: 9368580
    Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
    Type: Grant
    Filed: June 17, 2011
    Date of Patent: June 14, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Remigijus Gaska, Jinwei Yang, Michael Shur
  • Ultraviolet Surface Illuminator
    Publication number: 20160151523
    Abstract: A solution for disinfecting a screen of an item using ultraviolet radiation is provided. The solution can provide an electronic device including a screen utilized by a user of the electronic device. The screen can be an ultraviolet transparent screen that covers at least some of the internal portion of the electronic device and a set of ultraviolet radiation sources can be located adjacent to the transparent screen. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed towards an external surface of the ultraviolet transparent screen. The electronic device can further include a monitoring and control system, which can manage the ultraviolet radiation generation by monitoring a set of attributes relating to the external surface of the screen and controlling, based on the monitoring, ultraviolet radiation directed at the external surface of the screen.
    Type: Application
    Filed: February 4, 2016
    Publication date: June 2, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Alexander Dobrinsky, Michael Shur
  • Light Emitting Device Substrate with Inclined Sidewalls
    Publication number: 20160149099
    Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.
    Type: Application
    Filed: December 30, 2015
    Publication date: May 26, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Jianyu Deng, Alexander Dobrinsky, Xuhong Hu, Remigijus Gaska, Michael Shur
  • Gateless switch with capacitively-coupled contacts
    Patent number: 9349848
    Abstract: A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.
    Type: Grant
    Filed: November 18, 2013
    Date of Patent: May 24, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Device for disinfecting a surface of an item using ultraviolet radiation
    Patent number: 9339571
    Abstract: A solution for disinfecting a screen of an item using ultraviolet radiation is provided. The solution can provide an electronic device including a screen utilized by a user of the electronic device. The screen can be an ultraviolet transparent screen that covers at least some of the internal portion of the electronic device and a set of ultraviolet radiation sources can be located adjacent to the transparent screen. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed towards an external surface of the ultraviolet transparent screen. The electronic device can further include a monitoring and control system, which can manage the ultraviolet radiation generation by monitoring a set of attributes relating to the external surface of the screen and controlling, based on the monitoring, ultraviolet radiation directed at the external surface of the screen.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: May 17, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Alexander Dobrinsky, Michael Shur
  • Emitting device with improved extraction
    Patent number: 9337387
    Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: May 10, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Stress relieving semiconductor layer
    Patent number: 9330906
    Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.
    Type: Grant
    Filed: May 1, 2014
    Date of Patent: May 3, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Jinwei Yang, Wenhong Sun, Rakesh Jain, Michael Shur, Remigijus Gaska
  • Semiconductor structure with inhomogeneous regions
    Patent number: 9331244
    Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: May 3, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S Shatalov, Alexander Dobrinsky, Alexander Lunev, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska
  • Semiconductor Layer Including Compositional Inhomogeneities
    Publication number: 20160118534
    Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
    Type: Application
    Filed: December 30, 2015
    Publication date: April 28, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska, Mikhail Gaevski
  • Metallic Contact for Optoelectronic Semiconductor Device
    Publication number: 20160118535
    Abstract: A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. The contact areas can be separated from one another by a characteristic distance selected based on a set of attributes of a semiconductor contact structure of the contact and a characteristic contact length scale of the contact. The voids can be configured to increase an overall reflectivity or transparency of the contact.
    Type: Application
    Filed: December 30, 2015
    Publication date: April 28, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Lunev, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Semiconductor Structure with Inhomogeneous Regions
    Publication number: 20160118536
    Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
    Type: Application
    Filed: December 30, 2015
    Publication date: April 28, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Alexander Lunev, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska
  • Patterned substrate design for layer growth
    Patent number: 9324560
    Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: April 26, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska