Abstract: A defect repairing apparatus (1) capable of efficiently repairing defects includes: a substrate-mounting plate (3) for securing a substrate conveyed; a plurality of droplet discharge units (11) disposed along a direction different from the direction of conveyance of the substrate as seen from a direction perpendicular to the substrate secured by the substrate-mounting plate (3), which discharge droplets onto defects scattered about on the substrate; a head gantry unit (7) on which the plurality of droplet discharge units (11) have been mounted; and a gantry sliding mechanism (4) for moving the head gantry unit (7) relatively at a constant velocity along the direction of conveyance of the substrate, the droplet discharge units (11) moving each independently along a direction different from the direction of conveyance in accordance with data indicative of the positions of the defects scattered about on the substrate, while the head gantry unit (7) is moving along the direction of conveyance of the substrate.

Abstract: An ink-jet head (1) jets supplied liquid through plural nozzles (14). The ink-jet head (1) includes a liquid introduction port (23A), a liquid discharge port (23B), a common liquid chamber, and plural individual liquid chambers. The liquid introduction port (23A) introduces the liquid supplied from the outside. The liquid discharge port (23B) discharges the liquid to the outside. The common liquid chamber is disposed so as to communicate with the liquid introduction port (23A) and with the liquid discharge port (23B). The plural individual liquid chambers communicate with the common liquid chamber and with respective of the plural nozzle openings (14).

Abstract: A first defect distribution superimposed image is formed by superimposing defect distributions on individual substrates processed by a causal equipment unit candidate on one another. Second defect distribution superimposed images are formed by superimposing, on one another, defect distributions on individual substrates processed by equipment units other than the causal equipment unit candidate in one same step as that executed by the causal equipment unit candidate. The first defect distribution superimposed image and the second defect distribution superimposed images are displayed in contrast on one display screen.

Abstract: The present invention provides an image processing apparatus and an image processing system which facilitate management against unauthorized use by creating a job log according to a usage status of a user. A creation section creates a different job log for each individual user. The job log has storage conditions of image data included in the job log set according to a storage level. The storage conditions are a color of an image, a resolution of the image data and whether or not necessary to create OCR data of the image data. To increase efficiency of a follow-up research by using such a job log, the storage level of the image data relating to the user having performed unauthorized use is raised.

Abstract: In one embodiment of the present invention, in a liquid crystal display apparatus, while the complication of a driver circuit, etc., and an increase in operating frequency are suppressed, impulse display is implemented and the charge characteristics of pixel capacitances are improved. In an active matrix-type liquid crystal display apparatus of at least one embodiment, during a precharge period provided for each horizontal period, a precharge voltage or of the same polarity as that of a data signal provided during an effective scanning period immediately after the precharge period is provided to a source line.

Abstract: A production line includes an inspection step for acquiring inspection information representing positions of defects on each of substrates after an end of specified steps. With respect to m substrates subjected to the inspection step, a surface of each of the substrates is segmented into n regions, and defect density information having (m×n) components, which represent densities of defects contained in the regions, respectively, is acquired based on the inspection information. From the defect density information having (m×n) components, statistically mutually independent p (where p<m) features are extracted. Similarities between the p features and the defect density information as to the individual substrates are determined, respectively, and the substrates are classified for each one of the p features according to the similarities.

Abstract: A liquid crystal display panel includes a TFT substrate, a color filter (CF) substrate opposed to the TFT substrate, a sealant disposed between the TFT substrate and the CF substrate and disposed between portions of both the substrates located immediately outside display regions thereof, and a liquid crystal layer disposed between the TFT substrate and the CF substrate. The CF substrate is provided with a light-shielding layer at a portion located immediately outside its display region. The light-shielding layer is provided with a slit at a region that coincides with a line on the TFT substrate.

Abstract: The present invention has been achieved to provide a method and apparatus for speedily and homogeneously fabricating polycrystalline silicon films or similar devices at low cost. A silicon target is attached to a water-cooled electrode, while a substrate made of a desired material is set on the other, heated electrode. When atmospheric pressure hydrogen plasma is generated between the two electrodes, silicon atoms will be released from the low-temperature target on the side and deposited on the high-temperature substrate. A doped silicon film can be created by using a target containing a doping element. Since there is no need to handle expensive and harmful gases (e.g. SiH4, B2H6 and PH3), the apparatus can be installed and operated at lower costs. In an application of the film producing method according to the present invention, an objective substance can be selectively purified from a target containing a plurality of substances.

Abstract: A lens tube has two, first and second lenses (1, 2), a tubular lens frame (3) for holding the two lenses (1, 2), and three spacers (7) in contact with the opposite lens surfaces of the first and second lenses (1, 2). The spacers (7) are arranged so as to be in contact with curved surfaces of the first and second lenses (1, 2) and determine the distance between the first and second lenses (1, 2). The lens frame (3) has the same inner diameter between the first and second lenses (1, 2), and the spacers (7) are in contact with the inner wall of the lens frame (3). Since the lens frame (3) has the same inner diameter between the first and second lenses (1, 2), the first and second lenses (1, 2) are held with their centers perfectly aligned with each other.

Abstract: When it is judged that the IP address of a PC for the administrator is not included in IP addresses received from the PC for the administrator under accessing while a PC whose access is to be authorized is registered (NO in S20), the IP address of the PC for the administrator is registered besides IP addresses received for identifying PCs (S21). Meanwhile, when it is judged that the IP address of a PC for the administrator is included in IP addresses received from the PC for the administrator under accessing while a PC whose access is to be rejected is registered (YES in S43), the IP addresses received for identifying PCs are registered after excluding the IP address of the PC for the administrator therefrom (S21). This makes it possible to avoid a situation that an access from the terminal device for the administrator to a network device becomes impossible.

Abstract: An object of the invention is to provide an image encoding method and an image apparatus which do not request change on a decoder and can give effects on many applications by having an encoder carry processing for reducing occurrence of noise. A pixel whose tone value is 255 and corresponds to white is changed to a value outside of an extent of the tone value in the inverse direction for black, in other words to a value more than the whitest tone value 255. When an image for which this tone shifting processing is performed is encoded and decoded, a ripple 31 having a larger tone value than 255 occurs in a white portion of the image. Abnormal condition of the image in a shape of ripple on the decoded image existing prior to clipping is centered in a tone value larger than 255. Accordingly, mosquito noise occurs in a portion with a tone value larger than 255 and outside of an extent of the tone value. When this image is clipped by the tone value 255, the mosquito noise can be reduced.

Abstract: A fuser unit with a cleaning mechanism, including: a set of a heat roller and a pressure roller for sandwiching a recording sheet while heating the recording sheet by the heat roller; a feed roller for feeding a band-shaped cleaning member which is windable; a press roller for pressing the fed cleaning member against a surface of the heat roller or the pressure roller; a wind roller for winding the cleaning member which is pressed by the press roller; and a first reverse rotation preventing mechanism for preventing rotation of the press roller from rotating in the opposite direction to the winding direction of the cleaning member.

Abstract: A method of MBE growth of a semiconductor layer structure comprises growing a first (Al,Ga)N layer (step 13) over a substrate at the first substrate temperature (T1) using ammonia as the nitrogen precursor. The substrate is then cooled (step 14) to a second-substrate temperature (T2) which is lower than the first substrate temperature. An (In,Ga)N quantum well structure is then grown (step 15) over the first (Al,Ga)N layer by MBE using ammonia as the nitrogen precursor. The supply of ammonia to the substrate is maintained continuously during the first growth step, the cooling step, and the second growth step. After completion of the growth of the (In,Ga)N quantum well structure, the substrate may be heated to a third temperature (T3) which is greater than the second substrate temperature (T2). A second (Al,Ga)N layer is then grown over the (In,Ga)N quantum well structure (step 17).

Abstract: In a heterostructure field effect transistor (MISHFET), a source ohmic electrode 105 and a drain ohmic electrode 106 are formed on an AlGaN barrier layer 104. A SiNx gate insulator 108, a p-type polycrystalline SiC layer 109, and a Pt/Au gate electrode 110 being an ohmic electrode are formed one on another on the AlGaN barrier layer 104. Since the p-type polycrystalline SiC layer 109 is relatively large in work function, the channel of the MISHFET is depleted even in its zero-bias state, so that the normally-OFF operation occurs.

Abstract: A sheet carrying device has a mechanism that prevents a sheet from being fed backward into a carriage path after once discharged from the device, and the sheet carrying device includes a carriage surface that guides a sheet, a reverse roller attached to a rotation shaft of a sheet discharging portion, whose rotation direction is switchable between forward and backward, and a backward-feed prevention valve that prevents an edge of a discharged sheet from entering into a nip portion of the reverse roller, and the backward-feed prevention valve includes a resin sheet and an elastic member disposed at one end on the sheet discharging side of the resin sheet, and the elastic member has one surface supported by the rotation shaft of the reverse roller and the other surface pressing the resin sheet against the carriage surface.

Abstract: A gateway device includes a third block communicating information, and a control unit controlling the third block so as to generate second information representing an operation of an air conditioner and to transmit the second information to the air conditioner based on first information representing control contents of the air conditioner received by the third block. Accordingly, an apparatus connected to a network and absent of a high-level circuit can be controlled at high level.

Abstract: A virtual ground type semiconductor memory device comprises: a memory cell array in which nonvolatile memory cells each including a first electrode, a pair of second electrodes, and a charge retention part are arranged in row and column directions like a matrix; a read circuit for selecting a pair of the first and second bit lines connected to a selected memory cell to be read, applying first and second read voltages to the selected first and second bit lines, respectively, and detecting a magnitude of a memory cell current flowing in the selected memory cell, at the time of reading; a voltage applying means for applying the second read voltage to a second adjacent bit line adjacent to the selected second bit line on the opposite side of the first bit line; and a short-circuit means for short-circuiting the selected second bit line and the second adjacent bit line.

Abstract: The embodiments of the invention relate to application-layer multicasting, particularly to reduction of join/attachment latency of a node when joining a multicast group, by providing to a joining node a flat peer list and a preferred peer list which contains candidate node entries with recent available bandwidth information.

Abstract: A client connects to an Internet radio server to receive a data stream corresponding to an Internet radio station. Metadata is received on the Internet radio station data stream. In some cases some media data is also received on the Internet radio station data stream. Once the metadata is received, the client disconnects from the Internet radio server. The client determines when next metadata is going to be sent on the Internet radio station data stream, and reconnects to the Internet radio server before the next metadata is sent on the Internet radio station data stream. The steps of receiving the metadata, disconnecting from the Internet radio server, determining when the next metadata is going to be sent, and reconnecting to the Internet radio server may be performed repeatedly.

Abstract: A semiconductor laser device manufacturing method includes, sequentially, a first aging step S1, a first inspection step S2, a mounting step S3, a second aging step S4 and a second inspection step S5. Since the first aging step S1 on a semiconductor laser chip with a high-temperature direct current conduction is performed before the mounting step S3, threshold current and drive current of the semiconductor laser chip before mounting can be reduced.