Abstract: An X-ray computed tomography apparatus has a gantry rotatably mounted in a frame for rotating an X-ray source, mounted on the gantry, around an examination subject disposed in a central opening in the gantry. The gantry has rails at an outer circumference thereof, and the frame has a first set of rollers engaging the rails for radially guiding the gantry and a second set of rollers engaging the rails for axially guiding the gantry.
Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid ester with the following structure:G--O--CO--R*--CO--O--G,where G is an (optionally substituted) succinimide or maleinimide group and R* is the parent body of the dicarboxylic acid.
Abstract: The method is for resynchronizing a Data Reception Device. An error in synchronization occurs in multiplex equipment due to simulated frame alignment words. This situation is identified by a monitor that outputs an asynchronous desynchronization command (AB). The command is intermediately stored and is only evaluated with a window pulse (RI). As a result thereof, an error in synchronization, after whose appearance a resynchronization ensues, is avoided.
Abstract: A process for forming a silicon oxide-filled shallow trench on the active surface of a silicon chip starts with forming a trench in the silicon chip that has an upper portion with vertical side walls and a lower portion with tapered side walls. Then oxygen is implanted selectively into the walls of the lower portion of the trench and the chip is heated to react the implanted oxygen with the silicon to form silicon oxide. The rest of the trench is then filled with deposited silicon oxide, typically by depositing a layer of silicon oxide over the surface and then planarizing the deposited silicon oxide essentially to the level of the top of the trench. The silicon-filled shallow trench serves to divide the surface portion of the chip into discrete regions, each for housing one or more circuit components of an integrated circuit.
Abstract: For a defective functional unit (FE1), it is possible to switch over via electronic input and output changeover switches (EUS1, AUS1) via a combination unit (KOM) to a substitute functional unit (EFE). The input signal (ES1) is supplied via a combiner (VK1) to the substitute functional unit (EFE) and is supplied via a splitter (VK2) to the output changeover switches (AUS1, . . . ), and is connected through only by the output changeover switch (AUS1) of the defective functional unit (FE1).
Abstract: A predetermined number of actuators are arranged transversally to a continuously produced material web for adjusting the cross-sectional profile of the web. To determine to what degree the instantaneous cross-sectional profile can approximate a reference profile, an optimally achievable profile is determined first in a computing device on the basis of a measured profile and a mathematical model of a controlled system of a cross-sectional profile control, and the optimally achievable profile is compared with the measured profile.
Abstract: A method and an apparatus can determine the orders (z) of non-characteristic harmonic currents (Ih) of a second power supply grid, which is coupled to a first power supply grid using an HVDCT system. The apparatus and method also compensates for these non-characteristic harmonic currents (Ih), which are produced as a result of distortion (Uh) of the supply voltage (U1) which exists in the first grid because of a low-frequency harmonic and passes through the short coupling. The order (n) of the existing non-characteristic harmonics is determined by a voltage and/or current measurement of the voltage (U1) of the grid, from which order (n) the order (z) of the generated non-characteristic harmonics in the second grid is determined by a provided voltage-symmetry signal (SMG). This order (z) is supplied to filter logic of a compensation system. The energy quality is thus considerably improved, particularly in the case of grids which are not rigid.
Type:
Grant
Filed:
May 26, 1995
Date of Patent:
July 14, 1998
Assignee:
Siemens Aktiengesellschaft
Inventors:
Norbert Christl, Peter Lutzelberger, Kadry Sadek
Abstract: Deep submicran mosfets with defect enhanced CoSi2 formation and improved silicided junctions. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.
Type:
Grant
Filed:
November 5, 1996
Date of Patent:
July 14, 1998
Assignee:
Siemens Aktiengesellschaft
Inventors:
Heinrich Zeininger, Christoph Zeller, Udo Schwalke, Uwe Doebler, Wilfried Haensch
Abstract: A magnetic distance sensor for acquiring the position of a test subject has an elongated magnetic core that contains crystalline strips and amorphous strips. A measuring winding supplied by a constant current source generates respective voltages, directed oppositely relative to one another, in two coils, so that a differential voltage arises dependent on the position of the test subject. A distance sensor that is insensitive to unwanted magnetic fields is thus obtained.
Abstract: A coil body consists of a coil tube having flanges integrally formed onto the ends and having an axially through-extending opening. This core opening is formed by a successive arrangement of radial recesses which alternately extend through the coil tube wall from opposite sides. These radial recesses are formed by of reciprocally opposed projections of two cooperating mold halves of an injection molding tool. Such an arrangement permits manufacture of winding coil bodies with a simple two-part mold, eliminating a need for moveable components for forming the axial spindle core opening during the molding operation. The resulting coil body includes the continuous axial spindle opening defined by wall segments around its entire periphery and for easy attachment to a winding spindle for winding.
Abstract: A status latch with one-phase control signal is constructed only from purely static gates, thus has great security against interference in the stationary state, and is thus suited in particular for low-voltage operation. In the one-phase latch, the power loss is particularly low due to the lower wiring capacity of the control lines, for which reason it can be advantageously used in particular in digital circuits with high data rates. Advantageously, a low number of transistors is required.
Abstract: In a circuit arrangement for optical frequency conversion, having a switchable input filter arrangement with a wavelength channel filter of a wavelength multiplexer/demultiplexer which is formed using a number of such channel filters, which filter can be connected via a 1:n fiber switch to an input fiber and is passed through by the input signal in the multiplex operating direction, a frequency converter which is passed through in opposite directions by the input signal and a pump laser signal, and an output filter, the output filter is formed by a wavelength channel filter of the wavelength multiplexer/demultiplexer, which filter is passed through by the output signal in the demultiplex operating direction and is connected on the output side to the output fiber.
Abstract: A method for depositing an SiO.sub.2 layer, which acts as an inter-metal dielectric (IMD), is provided. The method includes the steps of applying to the topography an organodisiloxane which is dissolved in an organic solvent, the organodisiloxane is then polymerized, and the polymer formed is decomposed, the polymer changing in the process to become an SiO.sub.2 -rich layer. The method of the present invention results in SiO.sub.2 layers which achieve an excellent local and global degree of planarization and have a distinctly lower dielectric constant than SiO.sub.2 layers prepared using conventional methods.
Type:
Grant
Filed:
December 20, 1996
Date of Patent:
July 14, 1998
Assignee:
Siemens Aktiengesellschaft
Inventors:
Dirk Toebben, Doerthe Groteloh, Oswald Spindler, Michael Rogalli
Abstract: A microprocessor includes a processor unit with an internal bus and a programmable bus control unit with an external bus. The bus control unit interconnects the internal bus with the external bus through multiplexers, latches and control logic. An 8 and 16-bit multiplexed bus mode and an 8 and 16-bit non-multiplexed bus mode are programmable. The bus control unit generates all of the necessary control signals adjusting their timing to the respective bus type. Different bus configurations can be selected for several address ranges through different control registers. The timing of the bus signals is programmable to allow slower peripherals to be connected to the microprocessor.
Abstract: A metal sheath for surrounding a cable core consists of at least one shell part which is formed from a spring-hard steel strip. The shell part is formed by a method of bending a spring-hard steel strip into a shell having a transverse cross-section of at least a semi-circle so that after release, the shell springs back to the desired diameter for receiving the cable core.
Abstract: In a computed tomography apparatus with a volume reconstruction by a three-dimensional gridding algorithm an arithmetic unit and method for operating same are provided for efficiently implementing the three-dimensional gridding algorithm. In this arithmetic unit and method, randomly-distributed supporting points SP are weighted in the frequency space in order to be able to apply a 3D gridding algorithm for a three-dimensional Fourier reconstruction for a computed tomography apparatus. An ASIC is provided wherein the supporting point weighting and the 3D gridding algorithm are efficiently implemented.
Abstract: In a method for controlling functions for a change of radio area of communications terminal devices, in a program module structure of a subscriber module of wireless communications systems, a higher priority is allocated to the program modules for processing of the radio area change process than to the program modules for processing the communications protocols and to the program modules for switching. The program modules are processed according to their priority. Through the preferential treatment of the handover process, the system resources, in particular the processing resources, are concentrated on the handover process. In the context of the total load capacity of the subscriber module of the wireless communications system, the communications connection during a handover process is thus maintained with high reliability by effecting a rapid changeover to the new communications path, whereby disturbances are also avoided by means of the rapid changeover.
Abstract: An intermediate layer in which at least one channel-like depression is provided on the outer conductor of a coaxial cable. The depression proceeds helically with respect to the cable axis and at least one light waveguide is arranged in it. An outside envelope is applied outside the intermediate layer.
Type:
Grant
Filed:
March 1, 1996
Date of Patent:
July 7, 1998
Assignee:
Siemens Aktiengesellschaft
Inventors:
Karl-Heinz Klumps, Hermann Goessling, Franz-Josef Wichmann, Lothar Finzel
Abstract: In the control of a material-processing process in a regulated system, a preliminary adjustment of the system takes place at the beginning of each process cycle as a function of a precalculated process parameter. A material characteristic which is relevant for the process and which in turn is dependent on state variables (such as the composition of the material and its temperature), is included in an advance calculation of the process parameter. The relationship between the state variables and the material property is modelled in a neural network which forms a prediction value for the material property on its output side. As a function of the deviation between the prediction value and an actual value for the material property which is determined based on measuring the process parameter during the process cycle, an adaptive change of the network parameters takes place in the sense of reducing this deviation.
Type:
Grant
Filed:
May 16, 1994
Date of Patent:
July 7, 1998
Assignee:
Siemens Aktiengesellschaft
Inventors:
Otto Gramckow, Thomas Martinetz, Thomas Poppe, Gunter Sorgel
Abstract: A device for automatic impedance matching of an RF transmitter or receiver in a nuclear spin tomography installation, and method for operating the device. The impedance matching device contains an RF transmitter or receiver which is coupled via a matching circuit having two actuators to a transmitting or receiving antenna respectively. Furthermore, the device has a circuit for detecting the complex reflection factor at the input of the matching circuit as well as an electronic control device with calculating circuits for adjusting the actuators. According to the invention, the calculating circuits contain units for calculating the complex reflection factor of the antenna from the detected complex reflection factor, and for calculating the setting points of the actuators for a reflection factor of zero at the input of the matching circuit.