Abstract: A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.
Abstract: Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.
Abstract: In some embodiments, a semiconductor biosensor includes a plurality of wells, a plurality of detectors, and processing circuitry. Each well is configured to hold a test sample and to allow the test sample to be irradiated with ultraviolet radiation. The plurality of detectors are configured to capture a spectral response of the test sample irradiated with the ultraviolet radiation. Each well is coupled directly onto a detector, and each detector includes a) a photodiode and b) a planar optical antenna tuned to a particular wavelength. The planar optical antenna is between the photodiode and the well. The processing circuitry is coupled to the plurality of detectors, the processing circuitry being configured to calculate an average spectral response for the plurality of detectors.
Abstract: Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.
Abstract: Various ultraviolet (UV) reactors and their methods of fabrication are disclosed. One exemplary process comprises forming a set of parallel channels in a slab of ultraviolet transparent material. The process also comprises providing a reactor substrate with an input manifold and an output manifold. The process also comprises joining the slab of ultraviolet transparent material and the reactor substrate. The input manifold, output manifold, and set of parallel channels are in fluid communication after the joining step. The process also comprises providing a planar ultraviolet light source isolated from the set of parallel channels by the shaped slab of ultraviolet-transparent material. The set of parallel channels and a defining plane of the planar ultraviolet light source are parallel in the assembled ultraviolet reactor.
Type:
Application
Filed:
February 14, 2017
Publication date:
August 24, 2017
Applicant:
Silanna UV Technologies Pte Ltd
Inventors:
Steven Duvall, Norbert Krause, Christopher Flynn, Mark Hiscocks, Matthew Stewart