Abstract: An optoelectronic device comprising a semiconductor structure includes a p-type active region, an n-type active region, and an i-type active region. The semiconductor structure is comprised solely of one or more superlattices, where each superlattice is comprised of a plurality of unit cells. Each unit cell can comprise a layer of GaN and a layer of AlN. In some cases, a combined thickness of the layers comprising the unit cells in the i-type active region is thicker than a combined thickness of the unit cells in the n-type active region, and is thicker than a combined thickness of the unit cells in the p-type active region. The layers in the unit cells in each of the three regions can all have thicknesses that are less than or equal to a critical layer thickness required to maintain elastic strain.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: A light emitting device includes a substrate, a buffer layer, a first active layer, and a plurality of mesa regions. A portion of the first active layer includes a first electrical polarity. The plurality of mesa regions includes at least a portion of the first active layer, a light emitting region on the portion of the first active layer, and a second active layer on the light emitting region. A portion of the second active layer includes a second electrical polarity. The light emitting region is configured to emit light which has a target wavelength between 200 nm to 300 nm. A thickness of the light emitting region is a multiple of the target wavelength, and a dimension of the light emitting region parallel to the substrate is smaller than 10 times the target wavelength, such that the emitted light is confined to fewer than 10 transverse modes.

Abstract: A dislocation filter for a semiconductor device has a buffer layer comprising a short-period superlattice (SPSL) layer. The SPSL layer has first sub-layers of a first material that alternate with second sub-layers of a second material, the first material and the second material being group III-N binary materials that are different from each other. Each of the first sub-layers and each of the second sub-layers has a sub-layer thickness less than or equal to 12 monolayers. The buffer layer also includes a third layer of a third material, the third material being a group III-N material. The SPSL forms a sandwich structure with the third layer. The buffer layer bends dislocations away from a growth direction of the buffer layer.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: An optoelectronic device comprising a semiconductor structure includes a p-type active region and an n-type active region. The semiconductor structure is comprised solely of one or more superlattices, where each superlattice is comprised of a plurality of unit cells. Each unit cell comprises at least two distinct substantially single crystal layers.

Abstract: A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

Abstract: An excimer lamp includes a plurality of sheets and a plurality of spacers arranged to form a stack of a plurality of cells in comprising a plurality of chambers. The plurality of sheets includes a first outer sheet, a second outer sheet and a plurality of interior sheets. Each sheet in the plurality of sheets has an outer edge and comprises a material that is transmissive to a target wavelength. Each spacer is placed between two sheets and near the outer edge of each sheet. Each chamber is defined by a volume at least partially enclosed by the two sheets and at least one spacer. An emission material is within each chamber. A first electrode is coupled to the first outer sheet, exterior to the stack, and a second electrode is coupled to the second outer sheet, exterior to the stack. A method of manufacturing the excimer lamp is also disclosed.

Abstract: Light emitting device and methods for forming the devices include a substrate and a nanowire placed on the substrate, where the nanowire comprises a core made of a semiconductor material. A cladding encloses the nanowire and has a breakdown voltage larger than a breakdown voltage of the core. A source of an electric field is provided, where the core is at least partially aligned with and lies at least partially within the electric field such that a cycling of the electric field creates charge separation and electron-hole recombination in the core.

Abstract: Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector may have a metal composition comprising elemental aluminum or may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·?/n. K is a constant ranging from 0.25 to less than 1, ? is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

Abstract: A dislocation filter for a semiconductor device has a buffer layer comprising a short-period superlattice (SPSL) layer. The SPSL layer has first sub-layers of a first material that alternate with second sub-layers of a second material, the first material and the second material being group III-N binary materials that are different from each other. Each of the first sub-layers and each of the second sub-layers has a sub-layer thickness less than or equal to 12 monolayers. The buffer layer also includes a third layer of a third material, the third material being a group III-N material. The SPSL forms a sandwich structure with the third layer. The buffer layer bends dislocations away from a growth direction of the buffer layer.

Abstract: A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

Abstract: Various ultraviolet (UV) reactors and their methods of fabrication are disclosed. One exemplary process comprises forming a set of parallel channels in a slab of ultraviolet transparent material. The process also comprises providing a reactor substrate with an input manifold and an output manifold. The process also comprises joining the slab of ultraviolet transparent material and the reactor substrate. The input manifold, output manifold, and set of parallel channels are in fluid communication after the joining step. The process also comprises providing a planar ultraviolet light source isolated from the set of parallel channels by the shaped slab of ultraviolet-transparent material. The set of parallel channels and a defining plane of the planar ultraviolet light source are parallel in the assembled ultraviolet reactor.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector may have a metal composition comprising elemental aluminum or may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·?/n. K is a constant ranging from 0.25 to less than 1, ? is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

Abstract: A light emitting device includes a substrate, a buffer layer, a first active layer, and a plurality of mesa regions. A portion of the first active layer includes a first electrical polarity. The plurality of mesa regions includes at least a portion of the first active layer, a light emitting region on the portion of the first active layer, and a second active layer on the light emitting region. A portion of the second active layer includes a second electrical polarity. The light emitting region is configured to emit light which has a target wavelength between 200 nm to 300 nm. A thickness of the light emitting region is a multiple of the target wavelength, and a dimension of the light emitting region parallel to the thickness is smaller than 10 times the target wavelength, such that the emitted light is confined to fewer than 10 transverse modes.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

Abstract: Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.

Abstract: In some embodiments, a semiconductor biosensor includes a plurality of wells, a plurality of detectors, and processing circuitry. Each well is configured to hold a test sample and to allow the test sample to be irradiated with ultraviolet radiation. The plurality of detectors are configured to capture a spectral response of the test sample irradiated with the ultraviolet radiation. Each well is coupled directly onto a detector, and each detector includes a) a photodiode and b) a planar optical antenna tuned to a particular wavelength. The planar optical antenna is between the photodiode and the well. The processing circuitry is coupled to the plurality of detectors, the processing circuitry being configured to calculate an average spectral response for the plurality of detectors.