Abstract: A method for operating an MS decoder and an associated memory system utilizing the MS decoder. The method determines an operation mode of the MS decoder. For each variable node, the method calculates a variable to check node V2C message. The method stores, in a check node unit CNU memory, check information associated with the calculated V2C message according to the operation mode. The check information includes full information when the operation mode is a high precision mode, and partial information when the operation mode is a low precision mode.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers alternately stacked with each other, and a channel layer passing through the stacked structure, wherein the channel layer is a single layer, the single layer including a first GIDL region, a cell region, and a second GIDL region, and the first GIDL region has a greater thickness than each of the cell region and the second GIDL region.

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

Abstract: An image sensing device and a method for forming the same are disclosed. The image sensing device includes a substrate including photoelectric conversion elements, and a grid structure disposed over the substrate. The grid structure includes an inner grid layer, and an outer grid layer formed outside the inner grid layer to provide air layer formed at a side surface and a top surface of the inner grid layer.

Abstract: A storage device may include a storage comprising a plurality of dies each having a plurality of memory blocks, and configured to provide a default ZNS (Zoned NameSpace) size to a host device; and a controller configured to generate a ZNS by selecting one or more memory blocks corresponding to a required ZNS size from the plurality of dies to allocate the selected memory blocks to the ZNS in response to a ZNS generation request signal which includes the required ZNS size and is provided from the host device.

Abstract: A memory system and an operating method thereof are disclosed. An operating method of a memory system including a nonvolatile memory device and a controller configured to control the nonvolatile memory device includes the controller updating original data of firmware stored in the nonvolatile memory device, the controller transmitting a notification signal, which notifies a host device of completion of the updating of the original data, to the host device when the updating of the original data is completed, and the controller updating backup data of the firmware stored in the nonvolatile memory device after the notification signal is transmitted.

Abstract: A scheme for determining a flipping energy used in a bit-flipping decoder. The flipping energy is determined based on: a weight of at least one check node coupled to a column; a syndrome as a product of a noisy codeword and a parity check matrix; and a hard decision value of a previous iteration and a channel output value associated with the column.

Abstract: A semiconductor memory device includes a memory cell array, a row decoder, a plurality of page buffers, and a voltage switching circuit. The memory cell array includes a plurality of memory cells. The row decoder is connected to the memory cell array through word lines. The plurality of page buffers are connected to the memory cell array through bit lines. The voltage switching circuit decodes an operation voltage and transmits the decoded operation voltage to the row decoder. The plurality of page buffers are formed in a first under cell region among first and second under cell regions, the first and second under cell regions being adjacent to each other in a first direction under the memory cell array. At least a portion of the voltage switching circuit is formed in an under slim region that is adjacent to the first under cell region and the second under cell region in a second direction.

Abstract: A clock generation circuit includes a control clock generation circuit and first and second clock synchronization circuits. The control clock generation circuit compares a reference voltage with first and second feedback clock signals to generate first and second control clock signals. The first clock synchronization circuit makes the first and second feedback clock signals transit in synchronization with the first and second control clock signals. The second clock synchronization circuit generates first and second phase clock signals in synchronization with the first feedback clock signal and the second feedback clock signal.

Abstract: Embodiments of the present disclosure provide a system for testing multicore firmware (FW) in a memory system and a method thereof. A test system includes a test device and a storage device including a plurality of flash translation layer (FTL) cores, each FTL core associated with multiple memory blocks. The test device generates test preconditions for the plurality of FTL cores and provides the test preconditions to the plurality of FTL cores, the test preconditions being different from each other. Each of the plurality of FTL cores performs one or more test operations based on a corresponding test precondition of the test preconditions.

Abstract: A semiconductor device includes: a stack structure including conductive patterns and stack insulating layers, which are alternately stacked; a channel structure penetrating the stack structure; a tunnel insulating layer surrounding the channel structure; a cell storage pattern surrounding the tunnel insulating layer; and a dummy storage pattern surrounding the tunnel insulating layer, the dummy storage pattern being spaced apart from the cell storage pattern. The conductive patterns include a select conductive pattern in contact with the tunnel insulating layer.

Abstract: An operating method of a controller that controls a memory device, comprises: generating a data chunk including user data to be programmed in a page of the memory device and an internal parity generated by performing first ECC encoding on the user data, the internal parity being generated when a size of the user data is smaller than a size of a data area of the page, generating a page chunk including the data chunk, meta data of the user data and an external parity generated by performing second ECC encoding on the meta data and the data chunk, and controlling the memory device to program the page chunk into the page.

Abstract: A sputtering target and a method for fabricating an electronic device using the same are provided. A sputtering target may include a carbon-doped GeSbTe alloy, wherein, for the carbon-doped GeSbTe alloy, an average grain diameter of a GeSbTe alloy after sintering is in a range of 0.5 ?m to 5 ?m, and a first ratio of an average grain diameter of carbon after the sintering is Y (?m) to the average grain diameter of the GeSbTe alloy after the sintering may be in a range of greater than 0.5 and equal to or less than 1.5. Alternatively, for the carbon-doped GeSbTe alloy, a condition of Y=X×(Z/100) may be satisfied, where an average grain diameter of a GeSbTe alloy after sintering is X (?m), an average grain diameter of carbon after the sintering is Y (?m), and a content of carbon is Z (at %).

Abstract: A semiconductor circuit includes a first pad, a second pad, swapping circuit, and an internal circuit. The internal circuit receives a first external signal and a second external signal, and generates a first internal signal and a second internal signal. Based on master information and swapping information, the swapping circuit couples the internal circuit to one of first and second pads to provide a path through which the first internal signal is output and a path through which the first external signal is received, and couples the internal circuit to the other of the first and second pads to provide a path through which the second internal signal is output and a path through which the second external signal is received.

Abstract: A semiconductor device may include: a mode input control signal generation circuit configured to generate a control pulse when a mode control operation is performed, generate a mode input control signal by delaying the control pulse by a mode delay period, and control the mode delay period on the basis of a restart signal; a read strobe signal generation circuit configured to generate a read strobe signal on the basis of the control pulse; a read delay circuit configured to generate the read input control signal by delaying the read strobe signal by a read delay period; and a read pipe circuit configured to receive mode data on the basis of the mode input control signal, and receive cell data on the basis of the read input control signal.

Abstract: The present technology may include a first storage circuit connected to a plurality of memory banks, an error correction circuit, a read path including a plurality of sub-read paths connected between the plurality of memory banks and the error correction circuit, and a control circuit configured to control data output from the plurality of memory banks to be simultaneously stored in the first storage circuit by deactivating the read path during a first sub-test section, and to control the data stored in the first storage circuit to be sequentially transmitted to the error correction circuit by sequentially activating the plurality of sub-read paths during a second sub-test section.

Abstract: A data processing system may be configured to include a memory device, a controller configured to access the memory device when a host requests offload processing of an application, and process the application, and a sharing memory management component within the controller and configured to: set controller owning rights of access to a target region of the memory device in response to the host stores, in the target region, data used for the requested offload processing of the application; and set the controller owning rights of access or the host owning rights of access to the target region based on a processing state of the application.

Abstract: A semiconductor memory device includes: a memory cell region including normal cells and row-hammer cells coupled to each of a plurality of rows, wherein the row-hammer cells of a selected row are suitable for storing first data and second data, the first data representing a number of accesses to the selected row and the second data denoting whether to refresh second adjacent rows of the selected row; and a refresh control circuit suitable for: selecting a sampling address based on the first data read from a row corresponding to an input address when an active command is inputted, determining, in response to a refresh command, whether to refresh first adjacent rows of a target row corresponding to the sampling address, and determining, in response to the refresh command, whether to refresh second adjacent rows of the target row based on the second data read from the target row.

Abstract: A semiconductor system includes a controller configured to output a command address, data, and a write clock and an inverted write clock for latching the data through a channel, configured to output the write clock and the inverted write clock having a first set level and a second set level, respectively, by incorporating information with regard to characteristics of the channel during a pre-level interval, and configured to output the write clock and the inverted write clock that periodically toggle during a toggle interval, and a semiconductor device configured to latch and store the data in synchronization with the write clock and the inverted write clock.

Abstract: A storage device includes a memory device and a controller. The memory device includes a memory region configured by a plurality of memory cells. The controller is configured to set at least one prohibited threshold voltage distribution for the memory region based on a result of an operation on the memory region.