Abstract: A device for detecting zone parallelity includes a detection control circuit configured to generate respective first and second requests for first and second zones among a plurality of zones included in a solid state drive (SSD). An SSD controller is configured to control the SSD by generating a first command and a second command corresponding to the first request and the second request, respectively, and to schedule the first command and the second command. The detection control circuit determines zone parallelity of the first and second zones using response characteristics of the responses of the SSD to the first request and the second request. The response characteristics may include a latency of a response.

Abstract: According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1: In Chemical Formula 1, L1 and L2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.

Abstract: With regard to a function group including all or some functions included in one of multiple binary codes stored in the memory device, a binary code including a first function that is executed at a first timepoint is loaded into a first memory area at a second timepoint that precedes the first time point, thereby minimizing the operation delay time of the memory system, and minimizing the overhead occurring in the processing of calling a specific function.

Abstract: The present technology relates to an electronic device. According to the present technology, a memory device having improved verify accuracy may include a memory block including memory cells, a read and write circuit including a plurality of page buffers, a current sensing circuit configured to perform a verify operation of comparing sensing voltages with a reference voltage, and a control logic configured to control the current sensing circuit to perform the verify operation. The control logic controls performing a first verify operation on each of page buffer groups having a same logical group number, and performing a second verify operation on each of page buffer groups having a same physical group number, and the current sensing circuit outputs a verify pass signal in response to both results of the first verify operation and the second verify operation satisfying a pass criterion.

Abstract: A semiconductor memory device and a method for fabricating the same are provided. The semiconductor memory device includes a plurality of gate stacks separated by a plurality of slit structures, and each of the gate stacks includes: a first stack including three or more first conductive patterns spaced apart from one another at substantially a same level; a second stack formed on the first stack and including second conductive patterns and interlayer dielectric layers alternately stacked; and a plurality of channel structures penetrating the second stack and the first stack.

Abstract: The present disclosure relates to a semiconductor memory device and a manufacturing method of the semiconductor memory device. A semiconductor memory device includes a gate stacked structure, a channel layer passing through the gate stacked structure in a vertical direction, a memory layer disposed between the channel layer and the gate stacked structure, a dummy stacked structure extended toward the gate stacked structure, a first dummy pattern passing through the dummy stacked structure in the vertical direction, and a gap arranged in the first dummy pattern.

Abstract: Embodiments of the present disclosure relate to a memory system, a memory controller and an operating method of the memory system. According to embodiments of the present disclosure, the memory system may receive, from an outside of the memory system, a read command, execute a defense code on the data when a failure occurs during an operation of reading data from the memory device in response to the read command, and transmit defense code information, which is information related to the execution of the defense code for data, to the outside of the memory system.

Abstract: An input/output circuit may include an input circuit, an amplifier circuit and a precharging circuit. The input circuit may load differential input data to setup nodes based on a data strobe clock. The amplifier circuit may compare and amplify the data that is loaded to the setup nodes and configured to output the amplified data. The precharging circuit may precharge the setup nodes based on the data strobe clock and the differential input data.

Abstract: An image sensing device includes a first unit pixel block, a second unit pixel block, and an isolation transistor. The first unit pixel block includes a first common floating diffusion node, first photoelectric conversion elements, first transfer transistors and a first conversion gain transistor configured to change capacitance of the first common floating diffusion node. The second unit pixel block adjacent to the first unit pixel block includes a second common floating diffusion node, second photoelectric conversion elements, second transfer transistors and a second conversion gain transistor configured to change capacitance of the second common floating diffusion node. The isolation transistor located in a boundary region between the first unit pixel block and the second unit pixel block isolates the first conversion gain transistor and the second conversion gain transistor from each other.

Abstract: A memory device includes a memory block including memory cells to which a program voltage is applied through a word line. The memory device also includes a peripheral circuit configured to perform a verify operation of comparing threshold voltages of the memory cells with a verify voltage on each of a plurality of program levels. The memory device further includes a control logic circuit configured to control the peripheral circuit to apply a plurality of blind voltages related to a target level among the plurality of program levels to the word line, and determine a start time point of a verify operation corresponding to a next program level of the target level using the number of fail bits for each of the plurality of blind voltages.

Abstract: An electronic device includes a semiconductor memory. A method for fabricating the electronic device includes forming a first memory cell extending vertically from a surface of substrate and having a first upper portion that protrudes laterally, forming a second memory cell extending vertically from the surface of the substrate and having a second upper portion that protrudes laterally towards the first upper portion, and forming a liner layer over the first and second memory cells, the liner layer having a first portion disposed over the first upper portion and a second portion disposed over the second upper portion, the first and second portions of the liner layer contacting each other.

Abstract: A Peripheral Component Interconnect Express (PCIe) device includes a plurality of lanes comprising a plurality of ports, a link controller setting a link including the plurality of lanes, wherein the link is set to have a link width that includes the remaining of lanes, except for a fail lane from among the plurality of lanes, and an EQ controller performing an equalization operation for determining a transmitter or receiver setting of each of the remaining lanes, wherein the EQ controller determining a final EQ coefficient using a log information and an error information.

Abstract: A unit page buffer block includes first to fourth page buffer pairs. Each of the page buffer pairs includes a common column decoder block; and an upper page buffer stage and a lower page buffer stage electrically and commonly connected to the common column decoder block. Each of the upper page buffer stages includes an upper selection block; an upper latch block; and an upper cache block. Each of the lower page buffer stage includes a lower selection block; a lower latch block; and a lower cache block. Each of the upper selection blocks includes first to fourth sub-selection blocks. Each of the upper and lower latch blocks includes first to twelfth upper sub-latch blocks. Each of the upper and lower cache blocks includes first to twelfth upper sub-cache blocks. Each of the common column decoder block includes first to third sub-common column decoder blocks arranged in a row direction.

Abstract: A memory system may include: a nonvolatile memory device; and a controller suitable for generating first map information which maps physical addresses of the nonvolatile memory device to logical addresses received from a host, selecting some segments of the first map information as second map information, and outputting the second map information to the host, the controller may determine whether the second map information is updated, and may determine updated map segments as third map information, and the controller may output information to the host indicating the third map information corresponding to a command received from the host.

Abstract: A device may include a lane group, a command queue, and a link manager. The lane group may include a first lane and at least one or more second lanes to form a link for communicating with a host. The command queue may store commands for at least one direct memory access (DMA) device, the commands generated based on a request of the host. The link manager may, in response to detecting an event that an amount of the commands stored in the command queue being less than or equal to a reference value, change an operation mode from a first power mode to a second power mode in which power consumption is less than that of the first power mode, deactivate the at least one or more second lanes, and provide a second operation clock lower than a first operation clock to the at least one DMA device.

Abstract: The present technology relates to a storage device. According to the present technology, a memory controller controlling a memory device including a plurality of memory blocks may include an operation controller and a lifetime information controller. The operation controller may control the memory device to receive a write request from a host and perform a write operation on a selected memory block among the plurality of memory blocks. The lifetime information controller may generate lifetime information including a lifetime level of the selected memory block based on an erase and write count of the selected memory block.

Abstract: A data storage device may include a storage including a plurality of storage regions each composed of a plurality of pages; and a controller. The controller is configured to select a plurality of target open regions from open regions among the storage regions on the basis of health information of the open regions, in each of which a programmed page and an unprogrammed page coexist, and perform control so that refresh operations for the respective target open regions are performed in a time-distributed manner.

Abstract: There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a gate stack structure including interlayer insulating layers and conductive patterns, which are alternately stacked in a vertical direction on a substrate; a plurality of channel structures penetrating the gate stack structure, each of the plurality of channel structures with one end portion protruding past a boundary of the gate stack structure; and a source layer formed on the gate stack structure. The protruding end portion of each of the plurality of channel structures extends into the source layer. The protruding end portion of each of the plurality of channel structures has a flat section.

Abstract: System, method for circuit validation, and system and method for facilitating circuit validation are provided. The circuit validation system comprises a prototype system and a computing device. The prototype system comprises a programming logic device circuit configured to implement a modified circuit design. The modified circuit design includes a circuit module as a design under test (DUT), an input generation circuit coupled to the circuit module for outputting input signals to the circuit module in response to a test signal, and an output acquisition circuit coupled to the circuit module for storing output data from the circuit module. The computing device is capable of being coupled to the prototype system and configured to generate the test signal to perform a test of the DUT on the prototype system.

Abstract: Method for control protocol frame transmission and electronic device are provided. The method comprises following operations. By the electronic device operating in an advanced line encoding mode and having a first burst from the electronic device to the other electronic device, the first burst is closed and a second burst is opened from the electronic device to the other electronic device for request frame transmission, wherein the electronic device operating in the advanced line encoding mode is configured to transmit data by using an advanced line encoding having an effective data rate larger than an effective data rate of 8b/10b encoding. By the electronic device, a request frame is transmitted in the second burst.