Abstract: A device performs ambient light sensing using an image sensor. The device includes an image sensor and a receiver configured to receive image data from the image sensor. The device also includes a luminance calculator configured to calculate a code corresponding to the luminance value of the image data based on the image data. The device further includes an image sensor controller configured to change the setup condition of the image sensor in response to the code having a minimum value or a maximum value, among values capable of being assumed by the code. The device additionally includes a brightness measurer configured to output a brightness value in the vicinity of the image sensor, which is identified using the changed setup condition and the code.

Abstract: A semiconductor device, and a method of manufacturing a semiconductor device, includes first stack structures enclosing first channel structures and spaced apart from each other. The first channel structures are spaced apart from each other at a first distance in each of the first stack structures and the first stack structures are spaced apart from each other at a second distance.

Abstract: A vertical semiconductor device and a method for fabricating the same may include forming an alternating stack of dielectric layers and sacrificial layers over a lower structure, forming an opening by etching the alternating stack, forming a non-conformal blocking layer on the alternating stack in which the opening is formed, adsorbing a deposition inhibitor on a surface of the blocking layer to convert the non-conformal blocking layer into a conformal blocking layer on which the deposition inhibitor is adsorbed, and forming a charge storage layer on the conformal blocking layer.

Abstract: Provided herein may be a memory device and a method of operating the same. The memory device may include a memory cell array including a plurality of memory blocks, a peripheral circuit configured to perform a read operation of reading data stored in selected memory cells in a target block among the plurality of memory blocks, and a read protection controller configured to control the peripheral circuit to perform a read protection operation of limiting the read operation on memory blocks, among the plurality of memory blocks, corresponding to a read protection command received from a memory controller.

Abstract: An accumulator includes an exponent data latch circuit configured to output first exponent data of input data and second exponent data of latch data in synchronization with a first clock signal, a mantissa data latch circuit configured to output first mantissa data of the input data and second mantissa data of the latch data in synchronization with an edge of a second clock signal delayed by a delay time period later than an edge of the first clock signal, an exponent processing circuit configured to perform an exponent processing operation that generates first shift data and second shift data based on the first exponent data and the second exponent data transmitted from the exponent data latch circuit, and a mantissa processing circuit configured to shift the first mantissa data and the second mantissa data transmitted from the mantissa data latch circuit by the first shift data and the second shift data, respectively.

Abstract: Provided herein is a memory device and a method of operating the memory device. The memory device includes memory cells coupled to a word line, a peripheral circuit configured to perform a program operation of increasing threshold voltages of the memory cells to threshold voltages corresponding to a target program state among a plurality of program states, and a program operation controller configured to determine whether to perform an erase state verify operation of identifying threshold voltages of erase cells having an erase state as the target program state among the memory cells.

Abstract: In a method of treating a target film, a plurality of pattern structures with sidewall surfaces facing each other are provided. A target film is formed on the sidewalls of the plurality of pattern structures. A plurality of nanoparticles are distributed on the target thin film. The target thin film is thermally treated by irradiating laser light from upper sides of the plurality of pattern structures to the target thin film. The irradiated laser light is scattered from the plurality of nanoparticles.

Abstract: There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a peripheral circuit disposed on a substrate; and a gate stack structure overlapping with the peripheral circuit. The gate stack structure includes a plurality of first cell plugs having substantially a cylindrical structure and a plurality of second cell plugs having substantially a hexagonal prism structure.

Abstract: The present technology includes a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first semiconductor layer, a cell stack and a peripheral stack each disposed on the first semiconductor layer, a first slit structure extending in a first direction and penetrating the cell stack and the peripheral stack, a penetration structure penetrating the peripheral stack and being spaced apart from the first slit structure, and a support structure penetrating the peripheral stack. The support structure includes first sidewall portions spaced apart from each other and a second sidewall portion connecting the first sidewall portions to each other, and the penetration structure is disposed between the first sidewall portions.

Abstract: A semiconductor device includes an information update control circuit configured to generate a self-read pulse for a self-read operation, a self-write pulse for a self-write operation, and an information update section signal that is activated during an information update section when an active operation is performed, and a column control circuit configured to receive the self-read pulse and the self-write pulse, to generate a read column strobe pulse for outputting data or selection information data stored in a core circuit when the self-read operation is performed based on the self-read pulse or the read operation is performed according to the read pulse, and to generate a write column strobe pulse for storing the data or the selection information data in the core circuit when the self-write operation is performed based on the self-write pulse or the write operation is performed according to the write pulse.

Abstract: A storage device performs a read operation, based on a temperature measured in a program operation or an erase operation. The storage device includes: a memory device including a plurality of memory blocks, the memory device measuring a temperature in a program operation or an erase operation; and a memory controller for setting an area in which the measured temperature is to be stored in the memory device, and controlling a read operation to be performed in the memory device. When a read command for a selected page among a plurality of pages included in each of the plurality of memory blocks is received from the memory controller, the memory device determines a read voltage and a pass voltage based on a temperature corresponding to the selected page and performs a read operation on the selected page by using the read voltage and the pass voltage.

Abstract: A memory device includes: a plurality of memory cells; soft read logic configured to generate soft data by reading data from the plurality of memory cells in response to a soft read command from a controller, the soft data including at least a major symbol and at least a minor symbol; a compressor configured to generate compressed data by: encoding, into a code alphabet having a second length, a major source alphabet including repetitions of the major symbol by a first length among a plurality of source alphabets included in the soft data, and encoding, into a code alphabet having a longer length than the second length, a minor source alphabet including repetitions of the major symbol by a shorter length than the first length and ending with one minor symbol; and an interface configured to provide the compressed data to the controller.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include first and second vertical conductive patterns isolated from each other by a first slit. The semiconductor device may include at least one first half conductive pattern extending toward a first region disposed at one side of the first slit from the first vertical conductive pattern. The semiconductor device may include at least one second half conductive pattern extending toward a second region disposed at the other side of the first slit from the second vertical conductive pattern.

Abstract: A semiconductor device and a method of manufacturing the same. The semiconductor device has a substrate in which recess regions are formed and semiconductor regions acting as a source region or a drain region is defined between the recess regions; a gate insulating layer disposed on an inner surface of each recess region; a recess gate disposed on the gate insulating layer in each recess region; an insulating capping layer disposed above the recess gate in each recess region; a metallic insertion layer disposed between a side surface of the recess gate and a side surface of the insulating capping layer and facing with a side surface of the source region or the drain region; and an intermediate insulating layer disposed between the metallic insertion layer and the recess gate to electrically insulate the metallic insertion layer from the recess gate.

Abstract: A floating-point data operation circuit configured to perform an addition operation on first input data and second input data in floating-point format. The floating-point data operation circuit includes an exponent processing circuit configured to generate a number of first shift bits for first mantissa data of the first input data and a number of second shift bits for second mantissa data of the second input data using first exponent data of the first input data and second exponent data of the second input data. The exponent processing circuit includes an exponent subtraction circuit configured to generate and output exponent subtraction data by a subtraction operation and to generate and output a 2's complement of the exponent subtraction data, and a first selection output circuit configured to output first shift data and second shift data based on the most significant bit MSB value of the exponent subtraction data.

Abstract: A memory system may include: a memory device including a plurality of memory blocks; and a memory controller configured to receive a write request including a logical address from an outside, to store write data corresponding to the write request in a first memory block among the plurality of memory blocks, wherein when a map information update is required and the write request is a sequential write operation, to store, in a second memory block, offset information related to a page of the first memory block in which the write data is lastly stored.

Abstract: A processing-in-memory (PIM) device includes a processing-in-memory (PIM) device includes a memory bank including a left memory bank and a right memory bank, a first global buffer, a second global buffer, a left multiplying-and-accumulating (MAC) operator configured to perform a MAC operation on a first set of a plurality of weight data and a first set of a plurality of vector data, a right MAC operator configured to perform the MAC operation on a second set of the plurality of the weight data and a second set of the plurality of the vector data, and a bias data converter configured to receive bias input data and output bias output data, wherein the bias output data includes a range of numbers that is increased over a range of numbers of the bias input data and includes a value equal to half the value of the bias input data.

Abstract: Provided is an image processing system and a disparity calculation method. An image processing device included in the image processing system includes a preprocessor configured to determine an effective range of a focal length of an image sensor based on first disparities measured at a plurality of focal lengths of an object having a fixed position from the image sensor, and determine a representative value of equivalent aperture values for the image sensor corresponding to the effective range based on the first disparities. The image processing device also includes a disparity calculator configured to calculate a second disparity of the target object within the effective range based on the focal length, a first distance, a second distance, and the representative value of the equivalent aperture values.

Abstract: A first impedance calibration part configured to perform a first impedance calibration operation of generating a first impedance calibration code set for adjusting an impedance of a first terminating resistor to a first target value, with reference to an external resistor having a first resistance value. A second impedance calibration part configured to perform a second impedance calibration operation of generating a second impedance calibration code set for adjusting an impedance of a second terminating resistor to a second target value, with reference to a reference resistance unit, a resistance value of which is set to a second resistance value according to a part of the first impedance calibration code set.

Abstract: A processing-in-memory (PIM) system includes a host including an identification (ID)-channel mapper configured to generate a channel address corresponding to an identification received from outside the PIM system, and a plurality of PIM controllers coupled to the host through a plurality of channels, and the plurality of PIM devices coupled to the plurality of PIM controllers through the plurality of channels.