Abstract: The present disclosure is directed to pick-up state detection for an electronic device, such as a laptop. In a pick-up state, the device is picked or lifted up from a surface, such as a table. A power state of the device is adjusted in response to detecting the pick-up state. For example, the device is in a hibernate state while set on the table, and is switched to a working state in response to detecting the pick-up state.

Abstract: Method of manufacturing an electronic device, comprising forming an ohmic contact at an implanted region of a semiconductor body. Forming the ohmic contact provides for performing a high-temperature thermal process for allowing a reaction between a metal material and the material of the semiconductor body, for forming a silicide of the metal material. The step of forming the ohmic contact is performed prior to a step of forming one or more electrical structures which include materials that may be damaged by the high temperature of the thermal process of forming the silicide.

Abstract: A method for gesture tracking and motion tracking. The method includes providing a barometric signal via a barometric sensor, processing the barometric signal with a state machine having a plurality of states, the plurality of states comprising stationary states and moving states, transitioning from a first state of the plurality of states of the state machine to a second state of the plurality of states of the state machine as a function of the barometric signal reaching a signal threshold and as a function of a time reaching a time threshold, and determining a movement of the barometric sensor based on the transition from the first state to the second state.

Abstract: The present disclosure is directed to an electronic device including a semiconductor body having a first electrical conductivity and provided with a front side; an active area of the semiconductor body, accommodating the source and gate regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region of the electronic device, surrounding the active area. The edge region accommodates at least in part: i) an edge termination region, having a second electrical conductivity opposite to the first electrical conductivity, extending into the semiconductor body at the front side; and ii) a gate connection terminal of conductive material, electrically coupled to the gate region, extending on the front side partially superimposed on the edge termination region and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region.

Abstract: A semiconductor device includes an electrically conductive clip arranged in a bridge-like position between a semiconductor integrated circuit chip and an electrically conductive pad of a leadframe. The electrically conductive clip is soldered to the semiconductor integrated circuit chip and to the electrically conductive pad via soldering material applied at coupling surfaces facing towards the semiconductor integrated circuit chip and the electrically conductive pad. Prior to soldering, the clip is immobilized in the desired bridge-like position via one of welding (such as laser welding) or gluing at dedicated immobilization areas.

Abstract: A MEMS shutter including: a semiconductor substrate traversed by an aperture; a first semiconductor layer and a second semiconductor layer, which form a supporting structure fixed to the substrate; a plurality of deformable structures, each of which is formed by a corresponding portion of at least one between the first and second semiconductor layers; a plurality of actuators; a plurality of shielding structures, each of which is formed by a corresponding portion of at least one between the first and second semiconductor layers, the shielding structures being arranged angularly around the underlying aperture so as to provide shielding of the aperture, each shielding structure being further coupled to the supporting structure via a deformable structure.

Abstract: An integrated device includes: a semiconductor structural layer, including silicon carbide and having a first conductivity type; a power device integrated in the structural layer; and an edge termination structure, extending in a ring around the power device and having a second conductivity type. The edge termination structure includes a plurality of ring structures each arranged around the power device and in contiguous pairs. At least a first one of the ring structures comprises a transition region contiguous to a second one of the ring structures. The transition region includes connection regions, having the second conductivity type, connected to the second one of the ring structures and alternating with charge control regions having the first conductivity type.

Abstract: A microfluidic device has a chamber; a fluidic access channel in fluidic connection with the chamber; a plurality of nozzle apertures in fluidic connection with the chamber; and an actuator, operatively coupled to the fluid containment chamber and configured to cause ejection of drops of fluid through the nozzle apertures in an operating condition of the microfluidic device. The chamber has an elongated shape, with a length and a maximum width, wherein an aspect ratio between the length and the maximum width of the chamber is at least 3:1. The nozzle apertures are configured to generate, in use, a plurality of drops having a total drop volume, wherein a ratio total drop volume to a chamber volume is at least 15%.

Abstract: Disclosed herein is a DC-DC converter, including a high-side power switch coupled between an input voltage and a switched node and a low-side power switch coupled between the switched node and ground. An inductor is coupled between the switched node and an output node. An output capacitor is coupled between the output node and ground. A control circuit is configured to operate the high-side power switch in a constant charge mode of operation to vary on-time of the high-side power switch to maintain a constant amount of charge being transferred to the output capacitor during each charging cycle, independent of variation of the input voltage.

Abstract: A microelectromechanical gyroscope with detection along a vertical axis is provided with a detection structure having a movable structure, suspended above a substrate so as to perform, as a function of an angular velocity around the vertical axis a sense movement along a first horizontal axis. The movable structure has at least one drive mass internally defining a window, elastically coupled to a rotor anchor, at an anchoring region, through elastic anchoring elements; at least one bridge element, rigid and of a conductive material, cantilevered suspended and extending within the window along the first horizontal axis, elastically coupled to the drive mass; movable electrodes, carried integrally by the bridge element with extension along a second horizontal axis.

Abstract: A production process of a SiC wafer carried out in a same reaction chamber includes forming, on a support, a first SiC layer. The support is separated from the first SiC layer. A second SiC layer is grown on the first SiC layer, which includes introducing into the reaction chamber a precursor in the gaseous phase of a first dopant having a first electrical conductivity to generate a first stress in the second SiC layer, and introducing into the reaction chamber a precursor in the gaseous phase of a second dopant having a second electrical conductivity opposite to the first electrical conductivity, to generate a second stress in the second SiC layer that is opposite to, and balances, the first stress. The SiC wafer is thus without effects of warpage.

Abstract: A switched-mode power supply includes: a Buck converter; and a control circuit for the Buck converter, which includes: a switching unit configured to generate a switching control signal based on a feedback voltage of the Buck converter and a compensation ramp voltage; a transconductance amplifier, where a first input terminal and a second input terminal of the transconductance amplifier are configured to receive a reference voltage and the feedback voltage, respectively; a switch coupled between an output terminal of the transconductance amplifier and a first node, where the switching unit is coupled between the first node and the Buck converter; a compensation control circuit coupled to a control terminal of the switch and configured to open or close the switch based on a first signal representative of a current flowing through an inductor of the Buck converter; and a ramp signal generator configured to generate the compensation ramp voltage.

Abstract: In accordance with an embodiment, an envelope detector includes a first transistor having a first current conduction terminal coupled to a first connection node; a second current conduction terminal coupled to an intermediate node; and a control terminal coupled to the signal input node and to a biasing node; a second transistor having a first current conduction terminal coupled to the intermediate node; a second current conduction terminal coupled to a second connection node; and a control terminal coupled to the biasing node; and a first temperature compensating transistor that is diode-connected and coupled between a compensation output node and the biasing node. The second connection node is coupled to the compensation output node and the first connection node is coupled to a detector output.

Abstract: A circuit for decoding a pulse width modulated (PWM) signal generates an output signal switching between a first and second logic values as a function of a duty-cycle of the PWM signal. Current generating circuitry receives the PWM signal and injects a current to and sinks a current from an intermediate node as a function of the values of the PWM signal. A capacitor coupled to the intermediate node is alternatively charged and discharged by the injected and sunk currents, respectively, to generate a voltage. A comparator circuit coupled to the intermediate node compares the generated voltage to a comparison voltage and drives the logic values of the output signal as a function of the comparison.

Abstract: A method for manufacturing an electronic device includes forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.

Abstract: In an embodiment a method for managing a convolutional calculation carried out by a calculation unit adapted to calculate output data on output channels from convolution kernels applied to input data blocks on at least one input channel, wherein calculations on each input data block correspond respectively to an output datum on an output channel, and wherein the calculations with each convolution kernel correspond to the output data on each output channel respectively includes identifying a size of a memory location available in a temporary working memory of the calculation unit, pre-loading in the temporary working memory a maximum number of convolution kernels storable at the size of the memory; and controlling the calculation unit to calculate a set of output data calculable from pre-loaded convolution kernels.

Abstract: A circuit an amplifier stage that amplifier stage includes a positive amplifier branch and a negative amplifier branch and has current flow paths therethrough cascaded in a flow line for a core current for the amplifier stage between a supply node and a ground node. The positive and negative amplifier branches have respective input nodes configured to receive an input signal applied therebetween. A current mirror loop can be coupled to the respective input nodes of the positive and negative amplifier branches and provides an adjustable high-impedance bias source for the core current for the amplifier stage. In addition to, or instead of the current mirror loop, the circuit can include stability network having a gain bandwidth range. The amplifier stage is configured to short-circuit the output signal from the amplifier stage within the gain bandwidth range based on an output voltage setting signal.

Abstract: A semiconductor chip has a top metal layer with a passivation over an outer surface and including a first region and a second region. The passivation is fully removed from the first region and a contact layer for electrical wafer sorting probes is formed over the first region having the passivation fully removed therefrom. The passivation is initially only partly removed from the second region to protect the top met layer. Later, a remaining portion of the passivation is fully removed at the second region. Then, top metal layer at the second region provides a growth region for growing electrically conductive material over the second region.

Abstract: A power supply circuit includes a plurality of current supply circuits, each configured to provide an output current as a function of a respective digital control signal, and a measurement current proportional to the respective output current. A control circuit selects one of the measurement currents and one of the digital control signals associated with a current supply circuit. A comparison circuit generates a threshold current, and generates a comparison signal by comparing the selected measurement current with the threshold current. The control circuit sets, during a first phase, the threshold current to a first value smaller than an expected value for the selected measurement current as indicated by the selected digital control signal, and, during a second phase, to a second value greater than the expected value. The control circuit verifies whether the comparison signal is de-asserted during the first phase and asserted during the second phase.

Abstract: The present disclosure is directed to an electronic device including a semiconductor body having a first electrical conductivity and provided with a front side; an active area of the semiconductor body, accommodating the source and gate regions of the electronic device and configured to accommodate, in use, a conductive channel of the electronic device; and an edge region of the electronic device, surrounding the active area. The edge region accommodates at least in part: i) an edge termination region, having a second electrical conductivity opposite to the first electrical conductivity, extending into the semiconductor body at the front side; and ii) a gate connection terminal of conductive material, electrically coupled to the gate region, extending on the front side partially superimposed on the edge termination region and capacitively coupled with a portion of the semiconductor body adjacent and external to the edge termination region.