Abstract: A microelectronic device includes a chip housing a functional part and carrying first electrical contact regions in electrical connection with the functional part through first protected connections extending over or in the chip. A substrate has a first contact area and a second contact area, which is remote from the first contact area. The first contact area carries second electrical contact regions, and the second contact area carries external connection regions. The second contact regions and the external connection regions are in mutual electrical connection through second protected connections extending over or in the substrate. A protection-ring structure surrounds the first and second electrical contact regions and delimits a first chamber closed with respect to the outside. The first electrical contact regions and the second electrical contact regions are in mutual electrical contact.

Abstract: An embodiment device comprises a processing circuit and IP circuitry coupled to a power supply line, wherein the IP circuitry has an IP circuitry supply threshold for IP circuitry operation. A supply monitor circuit is coupled to the power supply line to sense the voltage on the power supply line and to switch the processing circuit to a low-power mode as a result of a drop in the voltage on the power supply line. The supply monitor circuit comprises a threshold setting node and is configured to be deactivated as a result of the voltage on the power supply line dropping below a deactivation threshold level set at the threshold setting node. A threshold setting circuit is configured to apply to the threshold setting node of the supply monitor circuit the IP circuitry supply threshold as a result of the processing circuit being in the low-power mode.

Abstract: A MEMS device includes a semiconductor support body having a first cavity, a membrane including a peripheral portion, fixed to the support body, and a suspended portion. A first deformable structure is at a distance from a central part of the suspended portion of the membrane and a second deformable structure is laterally offset relative to the first deformable structure towards the peripheral portion of the membrane. A projecting region is fixed under the membrane. The second deformable structure is deformable so as to translate the central part of the suspended portion of the membrane along a first direction, and the first deformable structure is deformable so as to translate the central part of the suspended portion of the membrane along a second direction.

Abstract: A device to read a variable resistor has an analog to digital converter (ADC), a first switch and a second switch. The ADC has a first ADC input, a second ADC input and an ADC output. The first switch selectively couples a first voltage indicative of a voltage across a first resistance to the first ADC input. The second switch selectively couples a second voltage indicative of a voltage across a second resistance to the second ADC input. The ADC outputs a signal indicative of a value of the second resistance.

Abstract: A fluid ejection device, comprising: a chamber; a membrane, with a first side and a second side opposite to one another, where the first side faces the chamber; an actuator, of a piezoelectric type, which extends on the second side of the membrane and is operatively coupled to the membrane for causing, in use, a vibration of the membrane; a passivation layer, which extends only alongside, or partially on, the actuator; and a protection layer, which extends on the actuator at least in surface portions of the latter that are free from the passivation layer, and has a Young's modulus lower than the Young's modulus of the passivation layer.

Abstract: A phase-change memory device, comprising: a memory array of PCM cells, a variable current generator, and a sense amplifier. The current generator comprises a reference array of PCM cells programmed in SET resistance state. The phase-change memory device further comprises a decoder for addressing each cell of the reference array so that a respective plurality of SET current signals is generated through the plurality of reference cells; and a controller configured to receive at input said SET current signals, select a number of SET current signals having the lowest current values among the plurality of SET current signals, calculate a mean value of said lowest current values, and adjust the reference current to be lower than said mean value.

Abstract: Embodiments of a device include on-board memory, an applications processor, a digital signal processor (DSP) cluster, a configurable accelerator framework (CAF), and at least one communication bus architecture. The communication bus communicatively couples the applications processor, the DSP cluster, and the CAF to the on-board memory. The CAF includes a reconfigurable stream switch and a data volume sculpting unit, which has an input and an output coupled to the reconfigurable stream switch. The data volume sculpting unit has a counter, a comparator, and a controller. The data volume sculpting unit is arranged to receive a stream of feature map data that forms a three-dimensional (3D) feature map. The 3D feature map is formed as a plurality of two-dimensional (2D) data planes.

Abstract: In accordance with an embodiment, a method of detecting moving objects via a moving camera includes receiving a sequence of images from the moving camera; determining optical flow data from the sequence of images; decomposing the optical flow data into global motion related motion vectors and local object related motion vectors; calculating global motion parameters from the global motion related motion vectors; calculating moto-compensated vectors from the local object related motion vectors and the calculated global motion parameters; compensating the local object related motion vectors using the calculated global motion parameters; and clustering the compensated local object related motion vectors to generate a list of detected moving objects.

Abstract: A computing system includes a first hardware element having a first accelerometer and a first gyroscope, and a second hardware element having a second accelerometer and a second gyroscope. The first and second hardware elements are moveable with respect to each other. The computing system recursively generates a result signal indicative of a relative orientation of the first and second hardware elements with respect to each other. The result signal may be generated by generating a first intermediate signal indicative of a angle between the first and second hardware elements based on signals generated by the first and second accelerometers and generating a second intermediate signal indicative of the angle based on signals generated by the first and second gyroscopes. The result signal indicative of the angle may be generated as a weighted sum of the first intermediate signal and the second intermediate signal. At least one of the first and second hardware elements is controlled by on the result signal.

Abstract: A radiofrequency harvester circuit may be used in a battery-less RFID device. The harvester circuit includes an antenna unit that captures radiofrequency signals and harvesting circuitry coupled to the antenna unit for collecting energy from the radiofrequency signals captured by the antenna unit. The antenna unit is selectively tunable at a plurality of tuning bands that are scanned by selectively tuning the antenna unit at different frequency bands and sensing respective values indicative of the power of radiofrequency signals captured by the antenna unit at the frequency bands scanned. A highest value out of said respective values for the power of radiofrequency signals as well as the frequency band in the plurality of tuning bands of the antenna unit providing the aforesaid highest value are identified and the harvester circuit is operated with the antenna unit tuned at the frequency band providing the highest value thus identified.

Abstract: A method, comprises: providing a laminar support member, having a front surface, arranging on the front surface at least one semiconductor die having a front surface and a back surface, with the back surface thereof towards the front surface of the support member and with the front surface thereof having die pads, arranging at the front surface of the support member sidewise of the at least one semiconductor die a plurality of electrically-conductive bodies, the electrically-conductive bodies arranged at respective recesses in the support member, wherein the electrically-conductive bodies protrude from the plane away from the front surface of the support member, providing a filling of molding material over the laminar support member between the at least one semiconductor die and the electrically-conductive bodies, and providing electrically-conductive lines between selected ones of the die pads of the semiconductor die and selected ones of the plurality of electrically-conductive bodies.

Abstract: A half-bridge converter is controlled by a circuit including a differential circuit receiving a reference signal and a feedback signal which is a function of an output signal from the converter. The half-bridge converter includes high-side and low-side electronic switches. A comparator generates a PWM-modulated signal for controlling the converter as a function of the duty cycle of the PWM-modulated signal in response to a signal at an intermediate node between the high-side and low-side electronic switches and an output of the differential circuit. A gain circuit block coupled between the intermediate node and the input of the comparator applies a ramp signal to the input of the comparator which is a function of the signal at the intermediate node. A variable gain is applied by the gain circuit block in order to keep a constant value for the duty cycle of said PWM-modulated signal irrespective of converter operation.

Abstract: Packaged semiconductor device having a frame, of conductive material; a body of semiconductor material, fixed to the frame through a first adhesive layer; a heatsink element, fixed to the body through a second adhesive layer; and a packaging mass surrounding the body and, at least partially, the frame and the heatsink element. The heatsink element is formed by a heatsink die facing, and coplanar to, a main face of the device and by a spacer structure, which includes a pair of pedestals projecting from the perimeter of the heatsink die towards the body and rest on the body.

Abstract: A process for manufacturing an optical system includes forming a first hydrophobic surface at a semiconductor substrate, providing a first drop of transparent material having a first shape on the first hydrophobic surface, and allowing the first drop to harden to form a first optical element having the first shape. The optical system may be a particle detector, and the process may optionally further include forming a light source at the semiconductor substrate configured to generate a light beam that passes through the first optical element and a cavity to a photodetector.

Abstract: A process for manufacturing a microelectromechanical device envisages: providing a wafer of semiconductor material; forming a buried cavity, completely contained within the wafer, and a structural layer formed by a surface portion of the wafer and suspended over the buried cavity; forming first trenches through the structural layer as far as the buried cavity, which define the suspended structure in the structural layer; filling the first trenches and the buried cavity with sacrificial material; forming a closing structure above the structural layer; removing the sacrificial material from the first trenches and from the buried cavity to release the suspended structure, the suspended structure being isolated and buried within the wafer in a buried environment formed by the first trenches and by the buried cavity.

Abstract: In at least one embodiment, an interface electronic circuit for a capacitive acoustic transducer having a sensing capacitor is provided. The interface electronic circuit includes an amplifier, a voltage regulator, a common-mode control circuit, and a reference generator. The amplifier has an input coupled to an electrode of the sensing capacitor. The voltage regulator is configured to receive a regulator reference voltage, generate a regulated voltage based on the regulator reference voltage, and supply the regulated voltage to a supply input of the amplifier. The common-mode control circuit controls a common-mode voltage present on the input of the amplifier based on a common-mode reference voltage. The reference generator receives a supply voltage and generates the regulator reference voltage and the common-mode reference voltage with respective values that are variable as a function of the supply voltage.

Abstract: A circuit arrangement, including: a circuit configured to synthesize a resistor having a resistance value having a variation in time equivalent to a resistance variation of a sensor resistor applied with a resistance bias voltage and a resistance current bias, wherein the circuit includes: an amplifier comprising an input transistor; a bias current generator comprising a control node coupled to an output of the input transistor, wherein the bias current generator is configured to generate a bias current flowing in the input transistor; and a further current generator configured to generate a current at least proportional to the resistance bias current and coupled to the output of the input transistor, wherein the resistance bias voltage is applied to an input of the amplifier, and wherein a transconductance of the input transistor is at least proportional to the resistance of the sensor resistor.

Abstract: A method of making an integrated circuit (IC) includes forming circuitry over a top surface of a semiconductor substrate having the top surface and an opposite bottom surface. An antenna is formed in an interconnect layer formed above the semiconductor substrate, where the antenna is coupled to circuitry. A seal ring is formed around a periphery of the interconnect layer. The seal ring is disposed around the antenna and the circuitry. A trench with a solid-state insulating material is formed. The trench extends vertically into the semiconductor substrate and extends laterally across the IC.

Abstract: A pressure sensor designed to detect a value of ambient pressure of the environment external to the pressure sensor includes: a first substrate having a buried cavity and a membrane suspended over the buried cavity; a second substrate having a recess, hermetically coupled to the first substrate so that the recess defines a sealed cavity the internal pressure value of which provides a pressure-reference value; and a channel formed at least in part in the first substrate and configured to arrange the buried cavity in communication with the environment external to the pressure sensor. The membrane undergoes deflection as a function of a difference of pressure between the pressure-reference value in the sealed cavity and the ambient-pressure value in the buried cavity.

Abstract: A manufacturing method of an HEMT includes: forming a heterostructure; forming a first gate layer of intrinsic semiconductor material on the heterostructure; forming a second gate layer, containing dopant impurities of a P type, on the first gate layer; removing first portions of the second gate layer so that second portions, not removed, of the second gate layer form a doped gate region; and carrying out a thermal annealing of the doped gate region so as to cause a diffusion of said dopant impurities of the P type in the first gate layer and in the heterostructure, with a concentration, in the heterostructure, that decreases as the lateral distance from the doped gate region increases.