Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

Abstract: The present disclosure relates to a device comprising an inductive element and a first capacitive element series connected between a first node and a second node, a first MOS transistor connected between the first node and a third node configured to receive a reference potential, the second node being coupled directly or via a second MOS transistor to the third node, a second capacitive element connected between a fourth node and an interconnection node between the first capacitive element and the inductive element, a current generator configured to provide an AC current to the fourth node, and a switch connected between the fourth node and the third node.

Abstract: A microfluidic dispensing device has a plurality of chambers arranged in sequence, each having an inlet receiving a liquid to be dispensed and a nozzle for emitting a drop of liquid. An actuator in each chamber receives an actuation quantity and causes a drop of liquid to be emitted by the nozzle of the respective chamber. A drop emission detection element in each chamber generates an actuation command upon detecting the emission of a drop of liquid. A sequential activation electric circuit includes a plurality of sequential activation elements, one for each chamber, each coupled to the drop emission detection element of the respective chamber and to an actuator associated with a subsequent chamber in the sequence of chambers. Each sequential activation element receives the actuation command from the drop emission detection element associated with the respective chamber and activates the actuator associated with the subsequent chamber in the sequence of chambers.

Abstract: In an embodiment, a USB interface includes a transformer, a primary winding of the transformer, and a first switch in series between a first and a second node, a secondary winding of the transformer and a component in series between a third and a fourth node, the fourth node configured to be set a first reference potential, a second switch connected between the third node and a first terminal, the first terminal configured to provide an output voltage of the USB interface; wherein the component is configured to avoid a current circulation in the secondary winding when the first switch is closed and a control circuit configured to compare a first voltage of an interconnection node between the secondary winding and the component to a first threshold and compare the first voltage to a second threshold when the first voltage is, in absolute values, above the first threshold.

Abstract: A substrate of a lead frame is made of a first material. The substrate is covered by a barrier film made of a second material, different from the first material. The barrier film is then covered by a further film made of the first material. A first portion of the lead frame is encapsulated within an encapsulating body in a way which leaves a second portion of lead frame extending out from and not being covered by the encapsulating body. A first portion of the further film which is not covered by the encapsulating body is then stripped away to expose the barrier film at the second portion of the lead frame. A second portion of the further film is left remaining encapsulated by the encapsulating body. The exposed barrier film at the second portion of the lead frame is then covered with a tin or tin-based layer.

Abstract: A clock recovery circuit comprises an input node receiving a data signal having a data rate, and a digital oscillator producing a local clock signal with a frequency higher than the data rate. A counter clocked by the local clock signal has its count value sampled and reset at the rising and falling edges of the data signal, and a storage block coupled to the counter stores a count value that is updated in response to the current sampled count value of the counter lying in an update range between lower and upper bounds. A threshold value set is produced as a function of the updated count value stored in the storage block. Sampling circuitry receives and samples the data signal, and provides a sampled version of the data signal in response to the count value of the counter reaching any of the threshold values.

Abstract: A method and apparatus for performing dynamic current scaling of an input current of a voltage regulator are provided. The method and apparatus allow tuning current consumption in various applications, calculating a duration of an activity phase in which various algorithms are executed and activating dynamic current scaling of a regulator if the activity duration is shorter than a programmable threshold. A controller receives a threshold for an activity duration and a window size in which to evaluate the activity duration.

Abstract: A communication circuit supports a first communication protocol and a second communication protocol that is different from the first communication protocol. A number of signals include first signals conveying first information messages and second signals conveying second information messages. The first information messages include a repetitive message having fixed repeated content and the second information messages include a non-repetitive message having variable content. The first signals and the second signals are transmitted via the communication circuit using the first communication protocol for the first signals and the second communication protocol for the second signals.

Abstract: A control circuit includes: a flip-flop having an output configured to be coupled to a control terminal of a transistor and for producing a first signal; a comparator having an output coupled to an input of the flip-flop, and first and second inputs for receiving first and second voltages, respectively; a transconductance amplifier having an input for receiving a sense voltage indicative of a current flowing through the transistor, and an output coupled to the first input of the comparator; a zero crossing detection (ZCD) circuit having an input configured to be coupled to a first current path terminal of the transistor and to an inductor, where the ZCD circuit is configured to detect a demagnetization time of the inductor and produce a third signal based on the detected demagnetization time; and a reference generator configured to generate the second voltage based on the first and third signals.

Abstract: In an embodiment a circuit includes a plurality of memory cells, wherein each memory cell includes a phase-change memory storage element coupled in series with a respective current-modulating transistor between a supply voltage node and a reference voltage node, the current-modulating transistors being configured to receive a drive signal at a control terminal and to inject respective programming currents into the respective phase-change memory storage element as a function of the drive signal, a driver circuit configured to produce the drive signal at a common control node, wherein the common control node is coupled to the control terminals of the current-modulating transistors, the drive signal modulating the programming currents to produce SET programming current pulses and RESET programming current pulses and at least one current generator circuit configured to inject a compensation current for the programming currents into the common control node.

Abstract: A set of configuration memory locations store configuration data for a microcontroller unit. A hardware monitoring module is coupled by an interconnection bus to the configuration memory locations. The hardware monitoring module reads from an instruction memory a command including an address of a target memory location in the set of configuration memory locations. Data is read from the target memory location corresponding to the address read and a checksum value is computed as a function of the data that is read from the target memory location. The computed checksum value is then compared to a respective expected checksum value stored in a checksum storage unit. An alarm signal is triggered in response to a mismatch detected between the computed checksum value and the respective expected checksum value.

Abstract: In an embodiment a non-volatile memory cell includes a substrate, a first body in the substrate, a second body in the substrate, a first storage transistor having a first conduction region and a second conduction region in the first body, the first and second conduction regions delimiting a first channel region in the first body, a first control gate region in the second body, an insulating region overlying the substrate, a single floating gate region extending on the substrate and embedded in the insulating region, the single floating gate region having a first portion on the first body and a second portion on the second body, the first portion and second portion being connected and electrically coupled, a first selection via extending through the insulating region and electrically coupling the first conduction region with a first conduction node, a second selection via extending through the insulating region and electrically coupling the second conduction region with a second conduction node and a first con

Abstract: A pulsed signal generator generates a pulsed signal having a pulse width configured to be equal to a given fraction of a pulse width of a reference clock. A reference current source outputs current having a reference magnitude, and a comparison current source outputs current having a magnitude that is a function of the reference magnitude and the given fraction. A comparison circuit compares a total current output by one of the reference current source and the comparison current source during pulses of the reference clock to a total current output by the other of the reference current source and the comparison current source during pulses of the pulsed signal equal in number to the pulses of the reference clock in order to determine whether the pulse width of the pulse signal is less than or equal to the given fraction of the pulse width of the reference clock.

Abstract: A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.

Abstract: A leadframe includes a die pad and a set of electrically conductive leads. A semiconductor die, having a front surface and a back surface opposed to the front surface, is arranged on the die pad with the front surface facing away from the die pad. The semiconductor die is electrically coupled to the electrically conductive leads. A package molding material is molded over the semiconductor die arranged on the die pad. A stress absorbing material contained within a cavity delimited by a peripheral wall on the front surface of the semiconductor die is positioned intermediate at least one selected portion of the front surface of the semiconductor die and the package molding material.

Abstract: A semiconductor MOS device having an epitaxial layer with a first conductivity type formed by a drain region and by a drift region. The drift region accommodates a plurality of first columns with a second conductivity type and a plurality of second columns with the first conductivity type, the first and second columns alternating with each other and extending on the drain region. Insulated gate regions are each arranged on top of a respective second column; body regions having the second conductivity type extend above and at a distance from a respective first column, thus improving the output capacitance Cds of the device, for use in high efficiency RF applications.

Abstract: An LED lighting system includes switching circuitry adjustably driving a string of LEDs and being controlled by a reference current and an enable signal. A controller generates the reference current and enable signal based upon a PWM signal such that the switching circuitry: sources a first LED current to the string of LEDs that is proportional to a duty cycle of the PWM signal when the duty cycle is greater than a threshold duty cycle to thereby perform analog dimming; and sources a second LED current to the string of LEDs that has a duty cycle proportional to the duty cycle of the PWM signal when the duty cycle of the PWM signal is less than the threshold duty cycle, such that an average LED current delivered to the string of LEDs is proportional to the duty cycle of the PWM signal to thereby perform digital dimming.

Abstract: A lead frame for an integrated electronic device includes a die pad made of a first metallic material. A top coating layer formed by a second metallic material is arranged on a top surface of the die pad. The second metallic material has an oxidation rate lower than the first metallic material. The top coating layer leaves exposed a number of corner portions of the top surface of the die pad. A subsequent heating operation, for example occurring in connection with wirebonding, causes an oxidized layer to form on the corner portions of the top surface of the die pad at a position in contact with the top coating layer.

Abstract: A waveform generator includes a system control unit and signal channels controlled by the system control unit and configured to supply driving signals for driving a respective transducer of an array of transducers. Each signal channel includes a sequential access memory having rows, where each row contains an instruction word configured to generate a respective step of a waveform to be generated. A memory output of the sequential access memory is defined by an output row at a fixed location. The waveform to be generated is defined by a block of instruction words. Each signal channel also includes an internal control unit that is configured to sequentially move the content of the sequential access memory, based on the instruction word currently at the memory output, so that sequences of instruction words are provided at the output row.

Abstract: A packaged semiconductor device includes a substrate having a first surface and a second surface opposite the first surface. At least one semiconductor die is mounted at the first surface of the substrate. Electrically-conductive leads are arranged around the substrate, and electrically-conductive formations couple the at least one semiconductor die to selected leads of the electrically-conductive leads. A package molding material is molded onto the at least one semiconductor die, onto the electrically-conductive leads and onto the electrically-conductive formations. The package molding material leaves the second surface of the substrate uncovered by the package molding material. The substrate is formed by a layer of electrically-insulating material.