Abstract: First combinational, arithmetic, or combinational and arithmetic, operations are applied to data and an expected value, generating result bit sequences. When the value of the data corresponds to the expected value, the result bit sequences are different from each other and correspond to expected values of the result bit sequences. Second operations are applied a first memory address, a second memory address, and the result bit sequences, generating a memory address. When values of the generated result bit sequences correspond to the expected values of the result bit sequences, the generated memory address corresponds to the first memory address. When values of the generated plurality of result bit sequences do not correspond to the expected values of the result bit sequences, the generated memory address corresponds to the second memory address. A software routine starting at the generated memory address is executed.

Abstract: A piezoelectric microelectromechanical structure is provided with a piezoelectric stack having a main extension in a horizontal plane and a variable section in a plane transverse to the horizontal plane. The stack is formed by a bottom-electrode region, a piezoelectric material region arranged on the bottom-electrode region, and a top-electrode region arranged on the piezoelectric material region. The piezoelectric material region has, as a result of the variable section, a first thickness along a vertical axis transverse to the horizontal plane at a first area, and a second thickness along the same vertical axis at a second area. The second thickness is smaller than the first thickness. The structure at the first and second areas can form piezoelectric detector and a piezoelectric actuator, respectively.

Abstract: Merged-PiN-Schottky, MPS, device comprising: a substrate of SiC with a first conductivity; a drift layer of SiC with the first conductivity, on the substrate; an implanted region with a second conductivity, extending at a top surface of the drift layer to form a junction-barrier, JB, diode with the substrate; and a first electrical terminal in ohmic contact with the implanted region and in direct contact with the top surface to form a Schottky diode with the drift layer. The JB diode and the Schottky diode are alternated to each other along an axis: the JB diode has a minimum width parallel to the axis with a first value, and the Schottky diode has a maximum width parallel to the axis with a second value smaller than, or equal to, the first value. A breakdown voltage of the MPS device is greater than, or equal to, 115% of a maximum working voltage of the MPS device in an inhibition state.

Abstract: A method includes performing, by a terminal with an access card, a first relay attack check for the access card in accordance with a local value associated with the terminal and a local value associated with the access card; determining, by the terminal, that the access card has passed the first relay attack check, and based thereon, performing, by the terminal with the access card, an authentication check of the access card in accordance with the local value associated with the terminal, the local value associated with the access card, and a local challenge value associated with the terminal; and determining, by the terminal, that the access card has passed the first relay attack check and the authentication check, and based thereon, validating, by the terminal, the access card.

Abstract: A satellite tracking channel has a frequency loop tracking a carrier frequency of a satellite signal. A first indication of a spoofed signals is generated based on a determined satellite signal noise floor value associated with the satellite tracking channel and a tracking channel signal noise threshold associated with the satellite tracking channel. A second indication of a spoofed signal is generated based on a determining satellite tracking phase noise associated with the satellite tracking channel and a tracking channel phase noise threshold associated with the satellite tracking channel. Reception of a spoofed signal on the satellite tracking channel is detected based on the generated first indication of a spoofed signal and the generated second indication of the spoofed signal.

Abstract: A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.

Abstract: A circuit includes frequency multiplier circuitry having input nodes configured to receive an input signal and an anti-phase version thereof, the input signal having a first frequency value, wherein the frequency multiplier circuitry is configured to produce a current signal at a second frequency value that is an even multiple of the first frequency value and a transformer including a primary side and a secondary side, wherein the primary side comprises a primary inductance coupled to the frequency multiplier circuitry to receive the current signal therefrom, wherein the secondary side is configured to provide a frequency multiplied voltage signal, and wherein the frequency multiplier circuitry and the transformer are cascaded between at least one first node and a second node, the at least one first node and the second node couplable to a supply node and ground.

Abstract: A system including an asynchronous finite state machine that transitions from a first state to a second state in response to receiving a virtual-clock event signal. The system further includes a trigger circuit that asserts a trigger signal when a first-state asynchronous event signal is asserted while the asynchronous finite state machine is in the first state. The system further including a virtual clock-pulse circuit configured to generate the virtual-clock event signal after receiving the trigger signal.

Abstract: A method of testing a photonic device includes providing a plurality of optical test signals at respective inputs of a first plurality of inputs of an optical input circuit located on a substrate, combining the plurality of optical test signals into a combined optical test signal at an output of the optical input circuit, transmitting the combined optical test signal through the output to an input waveguide of an optical device under test, the optical device under test being located on the substrate, and measuring a response of the optical device under test to the combined optical test signal. Each of the plurality of optical test signals comprises a respective dominant wavelength of a plurality of dominant wavelengths.

Abstract: An HEMT transistor includes a semiconductor body having a semiconductive heterostructure. A gate region, of conductive material, is arranged above and in contact with the semiconductor body. A first insulating layer extends over the semiconductor body, laterally to the conductive gate region. A second insulating layer extends over the first insulating layer and the gate region. A first field plate region, of conductive material, extends between the first and the second insulating layers, laterally spaced from the conductive gate region along a first direction. A second field plate region, of conductive material, extends over the second insulating layer, and the second field plate region overlies and is vertically aligned with the first field plate region.

Abstract: In accordance with an embodiment, a system includes a phase-locked loop (PLL) configured to provide a first local oscillator (LO) signal and a voltage-controlled oscillator (VCO) signal; a first quadrature demodulator configured to downconvert global navigation satellite system signals to produce a first intermediate frequency (IF) signal; a first signal processing chain configured to pass the first IF signal; a second signal processing chain comprising a first frequency divider configured to produce a second LO signal based on the first LO signal, and a second quadrature demodulator configured to convert the first IF signal to a second IF signal using the second LO signal; and a third signal processing chain comprising a second frequency divider configured to produce a third LO signal based on the VCO signal, and a third quadrature demodulator configured to convert the first IF signal to a third IF signal using the third LO signal.

Abstract: In an embodiment a control device includes a first input configured to receive a measurement signal representative of an output voltage of a switching circuit of a voltage regulator, a state determination block coupled to the first input and configured to generate a signal of actual operating condition of the voltage regulator and a driving signals generation module configured to generate at least one switching command signal for the switching circuit from an error signal representative of a difference between the output voltage and a nominal voltage, wherein the driving signals generation module includes an error-compensation circuit having a transfer function and configured to generate a control signal from the error signal and the actual operating condition signal, the control signal being a function of the actual operating condition.

Abstract: A control circuit and method, wherein an error signal is generated representative of a difference between an output voltage of a switching circuit and a nominal signal; a single control signal is generated, representative of an average error of the error signal; the single control signal is compared with a first periodic reference signal and a second periodic reference signal; a first pulse width modulated signal is generated by a Buck modulator; and a second pulse width modulated signal is generated by a Boost modulator. The maximum value of the first periodic reference signal and the minimum value of the second periodic reference signal are higher and lower, respectively, than the single control signal in a transient control mode between a Buck control mode and a Boost control mode.

Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

Abstract: A device includes a memory and processing circuitry coupled to the memory. The processing circuitry, in operation: estimates an angular rate of change and determines a rotational versor based on the rotational data; and estimates a gravity vector based on the angular rate of change and the rotational versor. The processing circuitry generates a dynamic gravity vector based on the estimated gravity vector, a correction factor and an estimated error in estimated gravity vector. The processing circuitry estimates a linear acceleration and determines an acceleration versor based on the acceleration data, and determines the correction factor based on the linear acceleration. The processing circuitry estimates the error in the estimated gravity vector based on the acceleration versor.

Abstract: A method for manufacturing an ohmic contact for a HEMT device, comprising the steps of: forming a photoresist layer, on a semiconductor body comprising a heterostructure; forming, in the photoresist layer, an opening, through which a surface region of the semiconductor body is exposed at said heterostructure; etching the surface region of the semiconductor body using the photoresist layer as etching mask to form a trench in the heterostructure; depositing one or more metal layers in said trench and on the photoresist layer; and carrying out a process of lift-off of the photoresist layer.

Abstract: The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.

Abstract: The present disclosure is directed to input detection for electronic devices using electrostatic charge sensors. The devices and methods disclosed herein utilize electrostatic charge sensors to detect various touch gestures, such as long and short touches, single/double/triple taps, and swipes; and perform in-car detection.

Abstract: A sensor includes detection circuitry and control circuitry coupled to the detection circuitry. The detection circuitry generates a detection signal indicative of a detected physical quantity. The control circuitry, in operation receives the detection signal and a frequency-indication signal, and generates a trigger signal based on the frequency-indication signal and a set of local reference signals. The sensor generates a digital output signal and a locking signal based on the trigger signal and the detection signal. The generating the digital output signal includes outputting a sample of the digital output signal based on the trigger signal. The locking signal is temporally aligned with the digital output signal.