Patents Assigned to STMicroelectronics S.r.l.
  • Patent number: 10958150
    Abstract: An electronic circuit includes a switched-mode power supply and a linear voltage regulation circuit having an input stage, a first output stage, and a second output stage. A first load is capable of being powered either by the switched-mode power supply in series with the regulation circuit or by the regulation circuit without the switched-mode power supply.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: March 23, 2021
    Assignees: STMICROELECTRONICS S.R.L., STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Michel Cuenca, Bruno Gailhard, Daniele Mangano
  • Patent number: 10954121
    Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: March 23, 2021
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Giorgio Allegato, Laura Oggioni, Matteo Garavaglia, Roberto Somaschini
  • Patent number: 10955244
    Abstract: A driving circuit for a microelectromechanical system (MEMS) gyroscope operating based on the Coriolis effect is provided. The driving circuit supplies drive signals to a mobile mass of the MEMS gyroscope to cause a driving movement of the mobile mass to oscillate at an oscillation frequency. The driving circuit includes an input stage, which receives at least one electrical quantity representing the driving movement and generates a drive signal based on the electrical quantity; a measurement stage, which measures an oscillation amplitude of the driving movement based on the drive signal; and a control stage, which generates the drive signals based on a feedback control of the oscillation amplitude. The measurement stage performs a measurement of a time interval during which the drive signal has a given relationship with an amplitude threshold, and measures the oscillation amplitude as a function of the time interval.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: March 23, 2021
    Assignee: STMicroelectronics S.r.l.
    Inventor: Stefano Facchinetti
  • Publication number: 20210080491
    Abstract: An active discharge circuit discharges an X capacitor and includes a sensor circuit that generates a sensor signal indicative of an AC voltage at the X capacitor. A processing unit generates a reset signal as a function of a comparison signal. A comparator circuit generates the comparison signal by comparing the sensor signal with a threshold. A timer circuit sets a discharge enable signal to a first logic level when the timer circuit is reset via a reset signal. The timer circuit determines the time elapsed since the last reset and tests whether the time elapsed exceeds a given timeout value. If the time elapsed exceeds the given timeout value, the timer circuit sets the discharge enable signal to a second logic level. A dynamic threshold generator circuit varies the threshold of the comparator circuit as a function of the sensor signal.
    Type: Application
    Filed: November 24, 2020
    Publication date: March 18, 2021
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Massimiliano Gobbi, Ignazio Salvatore Bellomo, Domenico Tripodi, Antonio Borrello, Alberto Bianco
  • Patent number: 10946653
    Abstract: The fluid ejection microfluidic device, has a substrate; a buried cavity within the first substrate; a membrane formed by the first substrate and extending between the buried cavity and a first main surface of the substrate; and an access channel extending through the substrate, laterally and externally to the buried cavity and to the membrane and isolated with respect to the buried cavity. A sealed actuation structure extends over the first main surface of the substrate. A containment layer, of polymeric material, extends over the first main surface of the substrate and forms a fluid containment chamber accommodating the sealed actuation structure. A nozzle body of semiconductor material closes the fluid containment chamber at the top and is traversed by an ejection opening, forming, together with the fluid containment chamber and the access channel, a fluidic path.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: March 16, 2021
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Domenico Giusti, Mauro Cattaneo, Donata Asnaghi
  • Publication number: 20210074835
    Abstract: A power MOS stage includes a first power MOS device and a second power MOS devices connected in parallel between a first node and a second node, the first power MOS device having a first voltage rating and the second power MOS device having a second voltage rating that is lower than the first voltage rating. A driver circuit is configured to drive control nodes of the first and second power MOS devices in a sequential manner when actuating the power MOS stage by actuating the first power MOS device before actuating the second power MOS device. The control nodes of the first and second power MOS devices are further driven in a sequential manner when deactuating the power MOS stage by deactuating the second power MOS device before deactuating the first power MOS device.
    Type: Application
    Filed: September 5, 2019
    Publication date: March 11, 2021
    Applicant: STMicroelectronics S.r.l.
    Inventors: Alberto CATTANI, Alessandro GASPARINI
  • Patent number: 10942157
    Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: March 9, 2021
    Assignees: STMICROELECTRONICS PTE LTD, STMICROELECTRONICS S.R.L.
    Inventors: Malek Brahem, Hatem Majeri, Olivier Le Neel, Ravi Shankar, Enrico Rosario Alessi, Pasquale Biancolillo
  • Patent number: 10942578
    Abstract: A system recognizes a gesture of bringing a mobile electronic device to a user ear. The system may be integrated in the mobile electronic device and is provided with a movement sensor which provides a movement signal indicative of the movement of the mobile electronic device. A pressure sensor provides a pressure signal indicative of a pressure acting on the mobile electronic device during the movement. A processing stage performs a joint processing of the movement signal and of the pressure signal in order to recognize the gesture.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: March 9, 2021
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Stefano Paolo Rivolta, Federico Rizzardini
  • Patent number: 10943896
    Abstract: Power MOS device, in which a power MOS transistor has a drain terminal that is coupled to a power supply node, a gate terminal that is coupled to a drive node and a source terminal that is coupled to a load node. A detection MOS transistor has a drain terminal that is coupled to a detection node, a gate terminal that is coupled to the drive node and a source terminal that is coupled to the load node. A detection resistor has a first terminal coupled to the power supply node and a second terminal coupled to the detection node.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: March 9, 2021
    Assignee: STMicroelectronics S.r.l.
    Inventor: Davide Giuseppe Patti
  • Patent number: 10941880
    Abstract: A valve module includes a semiconductor body, cavities in the semiconductor body separated from each other by a distance, a cantilever structure suspended over each cavity to enable at least partial closing of the cavity, and a piezoelectric actuator for each cantilever structure. The piezoelectric actuator is configured for use to cause a positive bending of the respective cantilever structure and so modulate a rate of air flow through the valve module.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: March 9, 2021
    Assignee: STMicroelectronics S.r.l.
    Inventors: Domenico Giusti, Oriana Rita Antonia Di Marco, Igor Varisco
  • Patent number: 10941440
    Abstract: A method for real-time quantitative detection of single-type, target nucleic acid sequences amplified using a PCR in a microwell, comprising introducing in the microwell a sample comprising target nucleic acid sequences, magnetic primers, and labelling probes; performing an amplification cycle to form labelled amplicons; attracting the magnetic primers to a surface through a magnetic field to form a layer including labelled amplification products and free magnetic primers; and detecting the labelled amplification products in the layer with a surface-specific reading method.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: March 9, 2021
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Lucio Renna, Clelia Carmen Galati, Natalia Maria Rita Spinella
  • Patent number: 10942228
    Abstract: A compensation circuit receives a sensing signal from a Hall sensor and outputs a compensated Hall sensing signal. The compensation circuit has a gain that is inversely proportional to Hall sensor drift mobility. The compensated Hall sensing signal is temperature-compensated.
    Type: Grant
    Filed: June 20, 2018
    Date of Patent: March 9, 2021
    Assignee: STMicroelectronics S.r.l.
    Inventors: Paolo Angelini, Roberto Pio Baorda, Danilo Karim Kaddouri
  • Publication number: 20210067148
    Abstract: A DC-DC converter includes clock generation circuitry generating first and second clock signals that are out of phase, and a control signal generator generating a switching control signal at an edge of the second clock signal based upon a comparison of an error voltage to a summed voltage. Boost circuitry charges an energy storage component during an on-phase and discharges the energy storage component during an off-phase to thereby generate an output voltage. The on-phase and off-phase are set as a function of the switching control signal. Sum voltage generation circuitry generates a ramp voltage in response to an edge of the first clock signal and generates the summed voltage at an edge of the second clock signal. The sum voltage represents a sum of the ramp voltage and a voltage representative of the current flowing in the energy storage component during the on-phase.
    Type: Application
    Filed: September 3, 2019
    Publication date: March 4, 2021
    Applicant: STMicroelectronics S.r.l.
    Inventors: Alessandro BERTOLINI, Alberto CATTANI, Stefano RAMORINI, Alessandro GASPARINI
  • Patent number: 10935592
    Abstract: A circuit includes a field effect transistor having a gate driven via a drive signal. The field effect transistor has a drain-source voltage drop indicative of the intensity of a current flowing in the current path through the field effect transistor. The circuit also includes a pair of sensing transistors that include a first sensing field effect transistor arranged with its drain and gate coupled with the drain and the gate of the field effect transistor, respectively, and a second sensing field effect transistor having a gate configured for receiving a replica of the drive signal. The second sensing field effect transistor is arranged with its current path in series with the current path of the first sensing field effect transistor. A sensing signal at a sensing node is indicative of the current intensity flowing in the current path of the field effect transistor.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: March 2, 2021
    Assignees: STMICROELECTRONICS S.R.L., STMICROELECTRONICS (SHENZHEN) R&D CO, LTD.
    Inventors: Edoardo Botti, Davide Luigi Brambilla, Hong Wu Lin
  • Patent number: 10935598
    Abstract: Fault detection circuitry and a corresponding method are disclosed. A count value that is indicative of the switching period of a PWM signal is determined and it is determined whether this count value is between a first threshold and a second threshold. An error signal is generated when the switching period is not between the first and the second threshold. A count value that is indicative of the switch-on duration of the PWM signal is determined and compared with a switch-on threshold in order to determine whether the switch-on duration is greater than a maximum switch-on duration. A count value that is indicative of the switch-off duration of the PWM signal is determined and compared with a switch-off threshold in order to determine whether the switch-off duration is greater than a maximum switch-off duration. Error signals can be generated when the durations are greater than the maximum durations.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: March 2, 2021
    Assignee: STMICROELECTRONICS S.R.L.
    Inventor: Giuseppe D'Angelo
  • Patent number: 10934158
    Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: March 2, 2021
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Alessandro Tocchio, Lorenzo Corso
  • Patent number: 10935738
    Abstract: A device includes a first directional coupler and a second directional coupler. A first arched waveguide forms a first curved optical path between a first output port of the first directional coupler and a first input port of the second directional coupler. The first arched waveguide has an angle of curvature and a radius of curvature. A second arched waveguide has the angle of curvature and the radius of curvature. The first arched waveguide and the second arched waveguide each have a concavity oriented in the same direction. A first straight waveguide is coupled to a second output port of the first directional coupler and a first end of the second arched waveguide. A second straight waveguide is coupled to a second end of the second arched waveguide and a second input port of the second directional coupler.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: March 2, 2021
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Antonio Fincato, Piero Orlandi
  • Patent number: 10935444
    Abstract: A stress sensor formed by a membrane plate; a first bonding region arranged on top of the membrane plate; a cover plate arranged on top of the first bonding region, the first bonding region bonding the membrane plate to the cover plate; three-dimensional piezoresistive elements extending across the membrane plate that are embedded in the bonding layer; and planar piezoresistive elements that extend across the membrane plate and are surrounded by and separated from the bonding layer.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: March 2, 2021
    Assignee: STMICROELECTRONICS S.r.l.
    Inventors: Elio Guidetti, Mohammad Abbasi Gavarti, Daniele Caltabiano, Gabriele Bertagnoli
  • Patent number: 10928425
    Abstract: A current monitoring circuit includes: an output terminal configured to be coupled to a controller; an inverter having an output coupled to the output terminal; a first transconductance amplifier having first and second inputs configured to be coupled across a sense resistive element, and an output coupled to an input of the inverter; and a current generator having a second transconductance amplifier configured to generate a reference current at an output of the current generator based on a reference voltage, the output of the current generator being coupled to the input of the inverter, where the output of the inverter is configured to be in a first state when a load current flowing through the sense resistive element is higher than a predetermined threshold, and in a second state when the load current is lower than the predetermined threshold, and where the predetermined threshold is based on the reference current.
    Type: Grant
    Filed: July 2, 2019
    Date of Patent: February 23, 2021
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Valerio Lo Muzzo, Alberto Gussoni, Ambrogio Bogani, Fabrizio Martignoni, Mattia Fausto Moretti
  • Patent number: 10928464
    Abstract: A Hall sensor compensation circuit includes an input node configured for receiving a bias signal for a Hall sensor. A bias node provides to the Hall sensor a compensated bias signal. A compensation network coupled between the input node and the bias node has a gain inversely proportional to Hall mobility, ?n?, wherein the Hall sensing signal is temperature-compensated.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: February 23, 2021
    Assignee: STMicroelectronics S.r.l.
    Inventors: Roberto Pio Baorda, Paolo Angelini