Abstract: The disclosure concerns an electronic device comprising, stacked from a first surface to a second surface, a first stack and a second stack of two high electron mobility transistors, referred to as first and second transistor, the first and the second stack each comprising, from an insulating layer, interposed between the first and the second stack, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first and a second set of electrodes, the first and the second set of electrodes being each provided with a source electrode, with a drain electrode, and with a gate electrode which are arranged so that the first and the second transistor form a half-arm of a bridge.

Abstract: A communication system couples a plurality of processing cores together, each having an associated register storing a virtual machine ID, which is inserted into requests sent by the respective processing core. A master circuit has associated a master interface circuit, wherein the master interface circuit has associated register for storing a second virtual machine ID, which is inserted into requests sent by the master circuit. A slave circuit has associated a slave interface circuit configured to selectively forward read or write requests addressed to an address sub-range. The slave interface circuit has associated a third register storing a third virtual machine ID associated with the address sub-range and is configured to receive a request addressed to the address sub-range, extract from the request a virtual machine ID, determine whether the extracted virtual machine ID corresponds to the third virtual machine ID, and then either forwards or rejects the request.

Abstract: A photonic device includes a PCB having an integrated circuit mounted thereon, with a cap mounted to the PCB and carrying a lens positioned over the integrated circuit. The cap is formed by: an outer wall mounted to the PCB, extending upwardly from the PCB, and surrounding a portion of the integrated circuit; a first retention structure extending inwardly from the outer wall and across the integrated circuit, the first retention structure having a hole defined therein; and a second retention structure having a hole defined therein, the second retention structure being affixed within the first retention structure such that the hole in the second retention structure is axially aligned with the hole in the first retention structure. The lens is mechanically constrained within the cap between the first retention structure and the second retention structure.

Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

Abstract: An optical package includes a substrate made of a first material having an upper surface and a lower surface. The substrate further includes at least one cavity opening onto an upper surface of the substrate. Electrical connection vias extend through the substrate. An electronic integrated circuit chip is mounted on the upper surface of the substrate in a position so as to cover the at least one cavity. The electronic integrated circuit chip includes an integrated optical sensor. Each cavity is filled with a second material having a thermal conductivity greater than the thermal conductivity of the first material. The electrical connection vias are arranged on either side of each cavity and between two cavities.

Abstract: A continuous time digital signal processing (CT DSP) token includes a first signal indicating a change has occurred and a second signal indicating a direction of the change. An amplitude generation circuit operates to generate an amplitude value x in response to the token. A power estimation circuit processes the amplitude value x to generate a digital power signal in accordance with the formula: x2±2x+1.

Abstract: The present disclosure relates to a method for controlling a device comprising an oscillation circuit, configured to provide a clock signal to a radio frequency circuit, and an antenna, in which the enabling of the passage of the signal from the circuit to the antenna is delayed with respect to an instant from which a power amplifier of the circuit is enabled.

Abstract: A wireless power receiving circuit includes a transistor based rectifier receiving an AC input voltage, and control logic receiving an overvoltage signal. The control logic generates control signals for controlling turn on of transistors within the transistor based rectifier based upon the overvoltage signal so as to cause the transistor based rectifier to produce a rectified output voltage from the AC input voltage. A comparator compares the rectified output voltage to a reference voltage and asserts the overvoltage signal if the rectified output voltage is greater than the reference voltage. In response to assertion of the overvoltage signal, the control logic asserts the control signals to simultaneously turn on all transistors of the transistor based rectifier.

Abstract: A random access memory is connected to a processing unit through a memory interface. Access to the random access is memory is controlled by a process. The memory interface receives a request for access to the memory issued by the processing unit. In response to the request, the memory interface indicates to the processing unit that the memory is not available to receive another access request during a duration of unavailability. This duration can be differentiated depending on whether the received request is a write or read request. The value of the duration of unavailability associated with a write request and the value of the duration of unavailability associated with a read request are individually programmable independently of each other.

Abstract: A method for modulating a signal including operating a circuit in a first arrangement during a first operating interval and switching the circuit between the first arrangement and a second arrangement during a first modulation interval to vary a load on the circuit to produce a first amplitude shift keying (ASK) signal. The method further includes detecting a voltage on the circuit crossing a threshold level and operating the circuit in the second arrangement during a second operating interval. The method also includes switching the circuit between the second arrangement and the first arrangement during a second modulation interval to vary the load on the circuit to produce a second ASK signal.

Abstract: An integrated circuit includes a high-voltage MOS (HV) transistor and a capacitor supported by a semiconductor substrate. A gate stack of the HV transistor includes a first insulating layer over the semiconductor layer and a gate electrode formed from a first polysilicon. The capacitor includes a first electrode made of the first polysilicon and a second electrode made of a second polysilicon and at least partly resting over the first electrode. A first polysilicon layer deposited over the semiconductor substrate is patterned to form the first polysilicon of the gate electrode and first electrode, respectively. A second polysilicon layer deposited over the semiconductor substrate is patterned to form the second polysilicon of the second electrode. Silicon oxide spacers laterally border the second electrode and the gate stack of the HV transistor. Silicon nitride spacers border the silicon oxide spacers.

Abstract: Moisture that is possibly present in an integrated circuit is detected autonomously by the integrated circuit itself. An interconnect region of the integrated circuit includes a metal level with a first track and a second track which are separated by a dielectric material. A detection circuit applies a potential difference between the first and second tracks. A current circulating in one of the first and second tracks in response to the potential difference is measured and compared to a threshold. If the current exceeds the threshold, this is indicative of the presence of moisture which renders said dielectric material less insulating.

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

Abstract: A voltage supply circuit and a method for controlling a voltage supply circuit are provided. The voltage supply circuit includes a positive charge pump stage that generates a positive voltage and a negative charge pump stage that generates a negative voltage. The voltage supply circuit also includes a control stage that compares a voltage representative of the negative voltage with a reference voltage and causes a slope of the positive voltage to decrease when the voltage representative of the negative voltage exceeds the reference voltage.

Abstract: A substrate made of doped single-crystal silicon has an upper surface. A doped single-crystal silicon layer is formed by epitaxy on top of and in contact with the upper surface of the substrate. Either before or after forming the doped single-crystal silicon layer, and before any other thermal treatment step at a temperature in the range from 600° C. to 900° C., a denuding thermal treatment is applied to the substrate for several hours. This denuding thermal treatment is at a temperature higher than or equal to 1,000° C.

Abstract: A substrate includes electrically-conductive tracks. A semiconductor chip is arranged on the substrate and electrically coupled to selected ones of the electrically-conductive tracks. Containment structures are provided at selected locations on the electrically-conductive tracks, where the containment structures have respective perimeter walls defining respective cavities. Each cavity is configured to accommodate a base portion of a pin holder. These pin holders are soldered to the electrically-conductive tracks within the cavities defined by the containment structures. Each containment structure may be formed by a ring of resist material configured to receive solder and maintain the pin holders in a desired alignment position.

Abstract: A device includes a MOS transistor and a bipolar transistor at a same first portion of a substrate. The first portion includes a first well doped with a first type forming the channel of the MOS transistor and two first regions doped with a second type opposite to the first type that are arranged in the first well which form the source and drain of the MOS transistor. The first portion further includes: a second well doped with the second type that is arranged laterally with respect to the first well to form the base of the bipolar transistor; a second region doped with the first type that is arranged in the second well to form the emitter of the bipolar transistor; and a third region doped with the first type that is arranged under the second well to form the collector of the bipolar transistor.

Abstract: A process for manufacturing a microelectromechanical mirror device includes, in a semiconductor wafer, defining a support frame, a plate connected to the support frame so as to be orientable around at least one rotation axis, and cantilever structures extending from the support frame and coupled to the plate so that bending of the cantilever structures causes rotations of the plate around the at least one rotation axis. The process further includes forming piezoelectric actuators on the cantilever structures, forming pads on the support frame, and forming spacer structures protruding from the support frame more than both the pads and the stacks of layers forming the piezoelectric actuators.

Abstract: A semiconductor device, such as a QFN (Quad-Flat No-lead) package, includes an insulating encapsulation of a semiconductor chip. The insulating encapsulation is formed by a first encapsulation material which encapsulates the semiconductor chip and a second encapsulation material that is molded onto an upper surface of the first encapsulation material. The first encapsulation material includes an oblique cavity extending from the upper surface. The second encapsulation material includes an anchoring protrusion that enters into the cavity.

Abstract: A phase lock loop (PLL) includes an input comparison circuit configured to compare a reference signal to a divided feedback signal and generate at least one charge pump control signal based thereupon. A charge pump generates a charge pump output signal in response to the at least one charge pump control signal. A loop filter is coupled to receive and filter the charge pump output signal to produce an oscillator control signal. An oscillator generates an output signal in response to the oscillator control signal, with the output signal divided by a divisor using divider circuitry to produce the divided feedback signal. Divisor generation circuitry is configured to change the divisor over time so that a frequency of the divided feedback signal changes from a first frequency to a second frequency over time.