Abstract: An electronic device includes a carrier substrate with an electronic IC chip mounted on top of the carrier substrate. An encapsulation block on top of the front face of the carrier substrate embeds the IC chip. The encapsulation block has a through-void for positioning and confinement that extends through the encapsulation block to the top of the carrier substrate. At least one electronic component is positioned within the through-void and mounted to the top of the carrier substrate. Solder bumps or pads are located within the through-void to electrically connect the at least one electronic component to the carrier substrate.

Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

Abstract: The present disclosure relates to a method for the preparation of a precursor solution for a ceramic of the BZT-aBXT type wherein X is selected from Ca, Sn, Mn and Nb and a is a molar fraction selected in the range between 0.10 and 0.

Abstract: An amplifier circuit includes a first input stage with a differential input transistor pair and a second gain stage having an output node coupled to a load. A node in the first gain stage is coupled to the output node in the second gain stage. A feedback line couples the output node to the control node of a first transistor of the differential input transistor pair. Current mirror circuitry is coupled to a current flow path through a further transistor in the second gain stage and includes a sensing node configured to produce a sensing signal indicative of the current supplied to the load. The sensing signal at the sensing node is directly fed back to the control node of the first transistor of the differential input transistor pair to provide a zero in the loop transfer function that is matched to and tracks and cancels out a load-dependent pole.

Abstract: Disclosed herein is hardware for easing the process of changing the execution mode of a virtual machine and its associated resources. By adopting the hardware, it is possible to trigger a change in the execution mode in an automatic way, without software intervention, and without interfering with the execution of other virtual machines. In addition, in case an error has occurred for a virtual machine and it is detected, the hardware can be used to disable the resources associated with that virtual machine and generate notification of the completion this operation to other hardware, which will complete the reset of the virtual machine. By adopting the hardware, the execution mode change is simplified and offers configurability and flexibility for a system running multiple virtual machines.

Abstract: The present disclosure concerns a phase-change memory manufacturing method and a phase-change memory device. The method includes forming a first insulating layer in cavities located vertically in line with strips of phase-change material, and anisotropically etching the portions of the first insulating layer located at the bottom of the cavities; and a phase-change memory device including a first insulating layer against lateral walls of cavities located vertically in line with strips of phase-change material.

Abstract: The disclosure concerns a device which comprises a stack of two high electron mobility transistors, referred to as first and second transistor, separated by an insulating layer and each provided with a stack of semiconductor layers respectively referred to as first stack and second stack, the first and the second stack each comprising, from the insulating layer to, respectively, a first and a second surface, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first set of electrodes and a second set of electrodes, the first and the second set of electrodes each comprising a source electrode, a drain electrode, and a gate electrode which are arranged so that the first and the second transistor are electrically connected head-to-tail.

Abstract: A MEMS device includes a semiconductor body with a cavity and forming an anchor portion, a tiltable structure elastically suspended over the cavity, first and second support arms to support the tiltable structure, and first and second piezoelectric actuation structures biasable to deform mechanically, generating a rotation of the tiltable structure around a rotation axis. The piezoelectric actuation structures carry first and second piezoelectric displacement sensors. When the tiltable structure rotates around the rotation axis, the displacement sensors are subject to respective mechanical deformations and generate respective sensing signals in phase opposition to each other, indicative of the rotation of the tiltable structure. The sensing signals are configured to be acquired in a differential manner.

Abstract: A method includes receiving a video signal that comprises a time series of images of a face of a human, wherein the images in the time series of images comprise a set of landmark points in the face, applying tracking processing to the video signal to reveal variations over time of at least one image parameter at the set of landmark points in the human face, generating a set of variation signals indicative of variations revealed at respective landmark points in the set of landmark points, applying processing to the set of variation signals, the processing comprising artificial neural network processing to produce a reconstructed PhotoPletysmoGraphy (PPG) signal, and estimating a heart rate variability of a variable heart rate of the human as a function of the reconstructed PPG signal.

Abstract: A processing system comprises a processing unit, a hardware block configured to change operation as a function of life cycle data, and a one-time programmable memory storing original life cycle data. A hardware configuration module is configured to read the original life cycle data from the one-time programmable memory, to store the original life cycle data in a register, to receive a write request from the processing unit, and to selectively execute the write request to overwrite the original life cycle data with new life cycle data in the register.

Abstract: An amplifier receives an input and a feedback. A first transistor controlled by the amplifier output is coupled between a supply node and the feedback. A second transistor controlled by the amplifier output is coupled to the supply node and generates a bias current. A trimmed resistor coupled between the feedback and ground includes, for trimming resolution of N-bits, where X+Y=N: M resistors, where M=2X?1, each having a resistance equal to R*(2Y)*i, i being an index having a value ranging from 1 to 2X?1, a first of the M resistors having a resistance of R*2Y, a last of the M resistors having a resistance of R*2Y*(2X?1); and M switches associated with the M resistors. Each of the M resistors is between a first node and its associated one of the M switches. Each of the M switches couples its associated one of the M resistors to a second node.

Abstract: A method is for operating an electronic device formed by a low dropout regulator (LDO) having an output coupled to a first conduction terminal of a transistor, with a second conduction terminal of the transistor being coupled to an output node. The electronic device is turned on by turning on the LDO, removing a DC bias from the second conduction terminal of the transistor by opening a first switch that selectively couples the second conduction terminal of the transistor to a supply node through a first diode coupled transistor and by opening a second switch that selectively couples the second conduction terminal of the transistor to a ground node through a second diode coupled transistor, and turning on the transistor. The electronic device is turned off by turning off the transistor, forming the DC bias at the second conduction terminal of the transistor, and turning off the LDO.

Abstract: A computing system includes a first hardware element having a first accelerometer and a first gyroscope, and a second hardware element having a second accelerometer and a second gyroscope. The first and second hardware elements are moveable with respect to each other. The computing system recursively generates a result signal indicative of a relative orientation of the first and second hardware elements with respect to each other. The result signal may be generated by generating a first intermediate signal indicative of a angle between the first and second hardware elements based on signals generated by the first and second accelerometers and generating a second intermediate signal indicative of the angle based on signals generated by the first and second gyroscopes. The result signal indicative of the angle may be generated as a weighted sum of the first intermediate signal and the second intermediate signal. At least one of the first and second hardware elements is controlled by on the result signal.

Abstract: An embodiment non-volatile memory device includes an array of memory cells in rows and columns; a plurality of local bitlines, the memory cells of each column being coupled to a corresponding local bitline; a plurality of main bitlines, each main bitline being coupleable to a corresponding subset of local bitlines; a plurality of program driver circuits, each having a corresponding output node and injecting a programming current in the corresponding output node, each output node coupleable to a corresponding subset of main bitlines. Each program driver circuit further includes a corresponding limiter circuit that is electrically coupled, for each main bitline of the corresponding subset, to a corresponding sense node whose voltage depends, during writing, on the voltage on the corresponding main bitline. Each limiter circuit turns off the corresponding programming current, in case the voltage on any of the corresponding sense nodes overcomes a reference voltage.

Abstract: A memory array arranged in multiple columns and rows. Computation circuits that each calculate a computation value from cell values in a corresponding column. A column multiplexer cycles through multiple data lines that each corresponds to a computation circuit. Cluster cycle management circuitry determines a number of multiplexer cycles based on a number of columns storing data of a compute cluster. A sensing circuit obtains the computation values from the computation circuits via the column multiplexer as the column multiplexer cycles through the data lines. The sensing circuit combines the obtained computation values over the determined number of multiplexer cycles. A first clock may initiate the multiplexer to cycle through its data lines for the determined number of multiplexer cycles, and a second clock may initiate each individual cycle. The multiplexer or additional circuitry may be utilized to modify the order in which data is written to the columns.

Abstract: A method includes: receiving IR radiation with a plurality of IR sensors; producing a plurality of output signals with the plurality of IR sensors based on the received IR radiation, where each of the plurality of output signals is indicative of an intensity of the IR radiation received by a respective IR sensor of the plurality of IR sensors; detecting an IR source based on the plurality of output signals; generating a candidate alarm in response to detecting the IR source; determining whether the detected IR source matches any reference IR source of a set of reference IR sources; when the detected IR source matches one reference IR source of the set of reference IR sources, issuing a user alarm, and when the detected IR source does not match any reference IR source of the set of reference IR sources, canceling the candidate alarm without issuing the user alarm.

Abstract: A circuit comprises first and second input supply nodes configured to receive a supply voltage therebetween. The circuit comprises a high-side driver circuit configured to be coupled to a high-side switch and produce a first signal between first and second high-side output nodes. The circuit comprises a low-side driver circuit configured to be coupled to a low-side switch and produce a second signal between first and second low-side output nodes. The circuit comprises a floating node configured to receive a floating voltage applied between the floating node and the second high-side output node, a bootstrap diode between the first input supply node and an intermediate node, and a current limiter circuit between the intermediate node and the floating node and configured to sense the floating voltage and counter a current flow from the intermediate node to the floating node as a result of the floating voltage reaching a threshold value.

Abstract: A control circuit includes a first control circuit generating a first drive control signal from a pre-drive signal (that is a frequency at which an opening angle of the first and second mirrors is equal) for the first mirror. A second control circuit generates a second drive control signal from the pre-drive signal for the second mirror. First and second drivers generate first and second drive signals for the first and second mirrors from the first and second drive control signals. The first and second drive control signals are generated so that the first and second drive signals each have a same frequency as the pre-drive signal but are different in amplitude from one another to cause the first and second mirrors to move at a same frequency, with a same and substantially constant given opening angle as one another, and in phase with one another.

Abstract: The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrodes electrically contact the conduction channels of each of the transistors so that said channels are electrically connected in parallel.

Abstract: A time series of face images of a human during a human activity are captured. A first artificial neural network (ANN) processing pipeline processes the captured time series of face images to provide a first attention level indicator signal. An electrophysiological signal indicative of the level of attention of the human during the activity is also captured. A second ANN processing pipeline processes the sensed electrophysiological signal to providing a second attention level indicator signal. A risk indicator signal is then generated based on at least one of the first attention level indicator and second attention level indicator. A user circuit is then triggered as a result of the risk indicator reaching or failing to reach at least one attention level threshold.