Abstract: The disclosure concerns an electronic assembly which extends along a stacking direction from a lower surface to an upper surface coupled by an edge surface, the assembly comprises at least two elementary modules stacked along the stacking direction, which each comprise, along the stacking direction and from a back side to a front side, two high electron mobility transistors respectively called back transistor and front transistor, separated by an insulator layer, and having in common a source electrode, a drain electrode, and a gate electrode, the assembly of the front and back transistors being electrically connected in parallel, the electronic assembly comprises, arranged on the front side of each elementary module, a contact layer, electrically contacting the gate electrode of the considered elementary module from its front side, each of the contact layers comprising an electric contact point emerging onto the edge surface.

Abstract: Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.

Abstract: A first switch couples an input node receiving a main control signal for a main switching stage of a multi-phase converter to an output node delivering a secondary control signal for a secondary switching stage following actuation of the secondary switching stage. A second switch couples the output node to a capacitor during a time period of actuation/deactuation of the secondary switching stage. Current is sourced to the capacitor during the actuation time period or sunk from the capacitor during the deactuation time period. The sourced or sunk current may be generated proportional to the main control signal.

Abstract: A memory calibration system includes a memory array having a plurality of memory cells, a sensing circuit coupled to the memory array, and calibration circuitry. A pattern of test data is applied to the memory array in order to generate calibration information based on output provided by the first sensing circuit in response to the application of the pattern of test data to the memory array. The generated calibration information is stored in a distributed manner within memory cells of the memory array. Some of the generated calibration information may be combined with data values stored in the plurality of memory cells as part of one or more operations on the stored data values.

Abstract: An electronic device includes a processing unit with a memory, a JTAG interface with test-data-input and test-mode-select lines coupled to the processing unit, a bridge circuit, and a multiplexer circuit. The bridge circuit includes a serial communication interface receiving a serial data input signal which conveys an input serial data frame. The bridge circuit includes a serial-to-parallel converter circuit block receiving the input serial data frame, processing the input serial data frame to read first and second subsets of input binary values therefrom, and transmitting the first subset via a first output signal and the second subset via a second output signal. The multiplexer circuit selectively propagates a received test-data-input signal or the first output signal to the test data input line, and selectively propagates a test-mode-select signal or the second output signal to the test mode select line of the JTAG interface.

Abstract: An input is coupled to a cathode of a laser diode having its anode coupled to a high-voltage-supply, with a cascoded current mirror having an input and output branches. The input branch is coupled between the high-voltage-supply and a sense resistor coupled to the input. The output branch is coupled between the high-voltage-supply and an output. A sense resistance is coupled between the output and ground, and includes a diode-coupled transistor coupled to the output and a resistor coupled between the diode-coupled transistor and ground. The input branch generates a current proportional to a voltage across the laser diode, and the output branch generates a mirrored current proportional to the current proportional to the voltage across the laser diode. A voltage proportional to the voltage across the laser diode is generated by the mirrored current flowing through the sense resistance. A comparison circuit compares this voltage to a threshold.

Abstract: A rectifier stage includes a differential input transistor pair coupled between a reference voltage node and an intermediate node, and a load circuit coupled between the intermediate node and a supply voltage node. The differential input transistor pair receives a radio-frequency amplitude modulated signal. A rectified signal indicative of an envelope of the radio-frequency amplitude modulated signal is produced at the intermediate node. An amplifier stage coupled to the intermediate node produces an amplified rectified signal at an output node that is indicative of the envelope of the radio-frequency amplitude modulated signal. The rectifier stage includes a resistive element coupled between the intermediate node and the supply voltage node in parallel to the load circuit.

Abstract: A power transistor generates an output current and a sense transistor generates a proportional sense current. A differential amplifier generates a gate voltage applied to the power and sense transistors in response to first and second input signals. A comparator circuit compares the gate voltage to a switching reference to detect whether the power and sense transistors are operating in a triode mode of operation or in a saturation mode of operation. At least one of the first and second input signals is modified in response to the detection made by the comparator circuit. In one instance, different reference voltages are applied to an input of the amplifier depending on the detected mode of operation. In another instance, different resistances are used to convert the sense current to a voltage for application to an input of the amplifier in response to the detected mode of operation.

Abstract: The integrated circuit includes a first node intended to be biased at a first voltage, a second node intended to be biased at a second voltage and having a non-negligible capacitive coupling with the first node. A power supply management device comprises a voltage booster configured to boost a power supply voltage and comprising boost stages configured to generate intermediate voltages on intermediate nodes. A compatibility detection circuit is configured to detect compatibility between the second voltage and one of the intermediate voltages, and, if the second voltage is compatible with an intermediate voltage, to couple the at least one second node to the compatible intermediate node.

Abstract: A switching converter includes a voltage conversion circuit providing an output voltage from an input voltage and a PWM voltage generated in response to first and second oscillating voltages. The input stage of a transconductor circuit provides an input reference current following a difference between a reference voltage and a voltage dependent on the output voltage and according to a transconductance, and an output stage for providing an output reference current from the input reference current. A phase shifter shifts an oscillating reference voltage according to the output reference current to obtain the first and second oscillating voltages. The transconductance is controlled in response to the input voltage resulting in a change of the input reference current. Compensation for that change is provided by subtracting a variable compensation current from the input reference current, where the variable compensation current is generated in response to the input voltage.

Abstract: The present disclosure relates to a method for forming a cavity that traverses a stack of layers including a bottom layer, a first portion of which locally presents an excess thickness, the method comprising a first step of non-selective etching and a second step of selective etching vertically in line with the first portion.

Abstract: A band-gap circuit for generating a bandgap reference signal includes a first bipolar transistor and a second bipolar transistor of a same type among PNP and NPN types. The first and second bipolar transistors are configured to generate a current varying proportionally with the temperature. A capacitor is connected between a base and an emitter of one or both of the first and second bipolar transistors.

Abstract: The present disclosure relates to a method of making an electronic device comprising a first wafer including at least one trench and a second wafer, the second wafer being bonded, by hybrid bonding, to the first wafer, so as to form, at the level of the trench, at least one enclosed space, empty or gas-filled.

Abstract: The disclosure concerns an electronic device comprising a HEMT transistor, called main transistor, and at least another HEMT transistor, called additional transistor, stacked on each other. The main transistor and the additional transistor comprise a common drain electrode and, respectively, a main source electrode and an additional source electrode, arranged so that electric conduction paths likely to be formed by the two conduction layers are connected in parallel when one and the other of the HEMT transistors are in the conductive state.

Abstract: A successive approximation analog-to-digital converter includes a digital-to-analog converter DAC configured to receive a digital signal. First conversion units of the DAC are configured to sample an analog signal via a first switch and provide a first level voltage. Each first conversion unit includes a first capacitor array and a first switch array controlled from the digital signal. A single second conversion unit of the DAC is configured to provide a second level voltage. The second conversion unit includes a second capacitor array and a second switch array. A comparator operates to compare each of the first level voltages to the second level voltage and to provide a comparison signal based on each comparison and actuation of a set of third switches. A control circuit closes the first switches simultaneously and closes the third switches successively for the conversion of each sampled analog signal.

Abstract: An electronic device is provided that includes a photodiode. The photodiode includes a semiconductor region coupled to a node of application of a first voltage, and at least one semiconductor wall. The at least one semiconductor wall extends along at least a height of the photodiode and partially surrounds the semiconductor region.

Abstract: An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region. A pair of gate contacts are provided at each trench. The pair of gate contacts includes: a first gate contact extending into the first gate lobe at a location laterally offset from the void and a second gate contact extending into the second gate lobe at a location laterally offset from the void.

Abstract: A delay circuit applies a one sample delay to a first digital sinusoid signal and outputs a delayed digital sinusoid signal. The first digital sinusoid signal and the delayed digital sinusoid signal are then added to each other by an adder circuit to generate an added digital sinusoid signal. A gain scaling circuit applies a scaling factor to the added digital sinusoid signal to generate a second digital sinusoid signal. Samples of the first and second digital sinusoid signals are alternately selected by a multiplexing circuit to generate a third digital sinusoid signal having twice as many samples as the first digital sinusoid signal over a same sinusoid period.

Abstract: A method, includes: storing at least one set of data in a memory space, wherein the at least one set of data stored has a memory footprint in the memory space; and coupling, to the at least one set of data, a respective counter indicative of the at least one set of data, wherein the respective counter is embedded in the at least one set of data without increasing the memory footprint in the memory space.

Abstract: A method for the personalization of an integrated circuit card, includes: simulating a downloading of a single image corresponding to a fixed part of personalization data of the integrated circuit card; simulating an execution of a sequence of personalization commands for the integrated circuit card to generate a set of personalization data; combining the set of personalization data with the single image to obtain a card image comprising the fixed part of personalization data and the set of personalization data; encrypting the card image to obtain an encrypted single image; and downloading the encrypted single image in a memory of the integrated circuit card.