Abstract: A memory includes a sequence of memory locations storing a corresponding sequence of state codes that specifying the shape of a waveform. The sequence of state codes is read from the memory and decoded by a long and toggle decoder circuit. The decoding operation generates a sequence of signal codes. When the state code is a long code, the sequence of signal codes includes same signal codes corresponding to a signal level of the waveform. When the state code is a toggle code, the sequence of signal codes includes a first signal code corresponding to one signal level of the waveform and a second signal code corresponding to another signal level of the waveform. A signal decode circuit then decodes the signal codes in the sequence of signal codes to generate the waveform for output which includes the signal levels corresponding to the decoded signal codes.

Abstract: Embodiments of an electronic device include an integrated circuit, a reconfigurable stream switch formed in the integrated circuit along with a plurality of convolution accelerators and a decompression unit coupled to the reconfigurable stream switch. The decompression unit decompresses encoded kernel data in real time during operation of convolutional neural network.

Abstract: A control circuit for a driving an electronic switch associated with a switching node of a flyback converter includes a comparison circuit configured to generate a switch-off signal by comparing a current measurement signal with a current measurement threshold signal. A valley detection circuit is configured to generate a trigger in a trigger signal when a valley signal indicates a valley in a voltage at the switching node of the flyback converter, and a blanking circuit is configured to generate a switch-on signal by combining the trigger signal with a timer signal provide by a timer circuit. The timer signal indicates whether a blanking time-interval has elapsed.

Abstract: A method for manufacturing electronic chips includes forming, on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed beforehand, metallizations coupling contacts of adjacent integrated circuits to one another. The method further includes forming, on the side of the first face of the substrate, first trenches extending through the first face of the substrate and laterally separating the adjacent integrated circuits. The first trenches extend through the metallizations to form at least a portion of metallizations at each of the adjacent circuits.

Abstract: Disclosed herein is a tunable resonant circuit including an inductance directly electrically connected in series between first and second nodes, a variable capacitance directly electrically connected between the first and second nodes, and a set of switched capacitances coupled between the first and second nodes. The set of switched capacitances includes a plurality of capacitance units, each capacitance unit comprising a first capacitance for that capacitance unit directly electrically connected between the first node and a switch and a second capacitance for the capacitance unit directly electrically connected between the switch and the second node. Control circuitry is configured to receive an input control signal and connected to control the switches of the set of switched capacitances. A biasing circuit is directly electrically connected to the tunable resonance circuit at the first and second nodes.

Abstract: The integrated sensor has a clock which provides a clock signal having a clock frequency; a digital detector which detects a power grid signal and generates a reference digital signal indicative of the power grid signal and having a sample rate which is a function of the clock frequency; and a timing monitoring stage which receives the reference digital signal and a nominal signal indicative of a nominal timing of the reference digital signal. The timing monitoring stage also compares the reference digital signal with the nominal signal and, in response, provides an error signal indicative of a timing error between the reference digital signal and the nominal signal.

Abstract: The present description concerns a method for manufacturing a protection device against overvoltages, comprising the following successive steps: a) epitaxially forming, on a semiconductor substrate, a semiconductor layer; b) submitting the upper surface of the semiconductor layer to a fluorinated-plasma process; and c) forming an electrically-insulating layer over and contacting the upper surface of the semiconductor layer.

Abstract: A control device includes a triac and a first diode that is series-connected between the triac and a first terminal of the device that is configured to be connected to a cathode gate of a thyristor. A second terminal of the control device is configured to be connected to an anode of the thyristor. The triac has a gate connected to a third terminal of the device that is configured to receive a control signal. The thyristor is a component part of one or more of a rectifying bridge circuit, an in-rush current limiting circuit or a solid-state relay circuit.

Abstract: Disclosed herein is a micro-electro-mechanical mirror device having a fixed structure defining an external frame delimiting a cavity, a tiltable structure extending into the cavity, a reflecting surface carried by the tiltable structure and having a main extension in a horizontal plane, and an actuation structure coupled between the tiltable structure and the fixed structure. The actuation structure is formed by a first pair of actuation arms causing rotation of the tiltable structure around a first axis parallel to the horizontal plane. The actuation arms are elastically coupled to the tiltable structure through elastic coupling elements and are each formed by a bearing structure and a piezoelectric structure. The bearing structure of each actuation arm is formed by a soft region of a first material and the elastic coupling elements are formed by a bearing layer of a second material, the second material having greater stiffness than the first material.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: An HEMT includes a semiconductor body, which includes a semiconductor heterostructure, and a conductive gate region. The gate region includes: a contact region, which is made of a first metal material and contacts the semiconductor body to form a Schottky junction; a barrier region, which is made of a second metal material and is set on the contact region; and a top region, which extends on the barrier region and is made of a third metal material, which has a resistivity lower than the resistivity of the first metal material. The HEMT moreover comprises a dielectric region, which includes at least one front dielectric subregion, which extends over the contact region, delimiting a front opening that gives out onto the contact region; and wherein the barrier region extends into the front opening and over at least part of the front dielectric subregion.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.

Abstract: Disclosed herein is a system including a power transistor having a first conduction terminal coupled to a supply node, a second conduction terminal coupled to an output node, and a control terminal controlled by a drive signal. The system further includes a driver configured to receive an input voltage from an external component and generate the drive signal based thereupon, and a sense circuit. The sense circuit is configured to, when the power transistor is powering a load coupled to the output node: detect whether the power transistor has entered an overload condition, and if so, determine a duration of time that the power transistor is in the overload condition; and assert a diagnostic signal in response to the duration of time being outside of a time window.

Abstract: The present description concerns a switch based on a phase-change material comprising: a region of the phase-change material; a heating element electrically insulated from the region of the phase-change material; and one or a plurality of pillars extending in the region of the phase-change material, the pillar(s) being made of a material having a thermal conductivity greater than that of the phase-change material.

Abstract: A MEMS device formed by a substrate, having a surface; a MEMS structure arranged on the surface; a first coating region having a first Young's modulus, surrounding the MEMS structure at the top and at the sides and in contact with the surface of the substrate; and a second coating region having a second Young's modulus, surrounding the first coating region at the top and at the sides and in contact with the surface of the substrate. The first Young's modulus is higher than the second Young's modulus.

Abstract: Memory devices such as phase change memory (PCM) devices utilizing Ovonic Threshold Switching (OTS) selectors may be used to fill the gap between dynamic random-access memory (DRAM) and mass storage and may be incorporated in high-end microcontrollers. Since the programming efficiency and reading phase efficiency of such devices is directly linked to the leakage current of the OTS selector as well as sneak-path management, a sense amplifier disclosed herein generates an auto-reference that takes into account the leakage currents of unselected cells and includes a regulation loop to compensate for voltage drop due to read current sensing. This auto-referenced sense amplifier, built utilizing the principle of charge-sharing, may be designed on a 28 nm fully depleted silicon-on-insulator (FDSOI) technology, provides robust performance for a wide range of sneak-path currents and consequently for a large range of memory array sizes, and is therefore suitable for use in embedded memory in high-end microcontroller.

Abstract: A micro-machined ultrasonic transducer is proposed. The micro-machined ultrasonic transducer includes a membrane element for transmitting/receiving ultrasonic waves, during the transmission/reception of ultrasonic waves the membrane element oscillating, about an equilibrium position, at a respective resonance frequency. The equilibrium position of the membrane element is variable according to a biasing electric signal applied to the membrane element. The micro-machined ultrasonic transducer further comprises a cap structure extending above the membrane element; the cap structure identifies, between it and the membrane element, a cavity whose volume is variable according to the equilibrium position of the membrane element. The cap structure comprises an opening for inputting/outputting the ultrasonic waves into/from the cavity. The cap structure and the membrane element act as tunable Helmholtz resonator, whereby the resonance frequency is variable according to the volume of the cavity.

Abstract: System on a chip, comprising several master pieces of equipment, several slave resources, an interconnection circuit coupled between the master pieces of equipment and the slave resources and capable of routing transactions between master pieces of equipment and slave resources. A first particular slave resource cooperates with an element of the system on a chip, for example a clock signal generator, and the element has the same access rights as those of the corresponding first particular slave resource.

Abstract: An embodiment of the present disclosure relates to an electronic circuit including a first switch coupling a first node of the circuit to an input/output terminal of the circuit; a second switch coupling the first node to a second node of application of a fixed potential; and a high-pass filter having an input coupled to the terminal and an output coupled to a control terminal of the second switch.