Abstract: Merged-PiN-Schottky, MPS, device comprising: a substrate of SiC with a first conductivity; a drift layer of SiC with the first conductivity, on the substrate; an implanted region with a second conductivity, extending at a top surface of the drift layer to form a junction-barrier, JB, diode with the substrate; and a first electrical terminal in ohmic contact with the implanted region and in direct contact with the top surface to form a Schottky diode with the drift layer. The JB diode and the Schottky diode are alternated to each other along an axis: the JB diode has a minimum width parallel to the axis with a first value, and the Schottky diode has a maximum width parallel to the axis with a second value smaller than, or equal to, the first value. A breakdown voltage of the MPS device is greater than, or equal to, 115% of a maximum working voltage of the MPS device in an inhibition state.

Abstract: A control circuit for an electronic converter is generates a drive signal of the electronic converter by setting the drive signal to a first logic level in response to a switch-on signal, and to a second logic level in response to a switch-off signal. The control circuit comprises a valley detection circuit and a combinational logic circuit. The control circuit comprises a blanking circuit configured to generate the blanking signal by determining a blanking time, and asserting the blanking signal when the blanking time elapses since the start of the switch-on or the switch-off interval. The control circuit comprises a blanking time adaption circuit to adapt the blanking time as a function of a blanking time adaption signal based on the input voltage, and to increase the blanking time when the input voltage increases, and decrease the blanking time when the input voltage decreases.

Abstract: Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.

Abstract: A MEMS inclinometer includes a substrate, a first mobile mass and a sensing unit. The sensing unit includes a second mobile mass, a number of elastic elements, which are interposed between the second mobile mass and the substrate and are compliant in a direction parallel to a first axis, and a number of elastic structures, each of which is interposed between the first and second mobile masses and is compliant in a direction parallel to the first axis and to a second axis. The sensing unit further includes a fixed electrode that is fixed with respect to the substrate and a mobile electrode fixed with respect to the second mobile mass, which form a variable capacitor.

Abstract: An integrated device includes: a semiconductor structural layer, including silicon carbide and having a first conductivity type; a power device integrated in the structural layer; and an edge termination structure, extending in a ring around the power device and having a second conductivity type. The edge termination structure includes a plurality of ring structures each arranged around the power device and in contiguous pairs. At least a first one of the ring structures comprises a transition region contiguous to a second one of the ring structures. The transition region includes connection regions, having the second conductivity type, connected to the second one of the ring structures and alternating with charge control regions having the first conductivity type.

Abstract: Provided is an electronic system including an electronic device and a reader. The electronic device includes a non-volatile memory; a first NFC module; and a first component adapted to receiving at least one signal sent by a sensor and adapted to converting said signal into digital data. When the electronic device receives said signal said component converts said signal into the data, and then stores said data into said non-volatile memory. The first module is adapted to supplying said reader with said data. The reader includes a second NFC module; and a second component adapted to implementing a digital filtering function. The second module is adapted to receiving said data and said second component is adapted to applying said function to said data.

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

Abstract: Various embodiments of the present disclosure disclose decoding techniques for mitigating data corruption due to duty cycle distortion, jitter, and other distortions to a digital signal. Decoding processes, apparatuses, and systems are provided that utilize a decoding framework for improving the accuracy of output bit streams generated from digital signals. An example process receives data indicative of a digital signal, generates a signal measurement for the digital signal that includes signal length descriptive between a two rising edges of a digital signal or two falling edges of the demodulated digital signal, and generates at least one portion of an output bit stream for the digital signal based at least in part on the signal measurement.

Abstract: A secure element device that is configured to be cryptographically bound to a host device includes a secure element host key slot configured to store host key information that allows only the host device to control the secure element, a secure memory storing binding information, and limited functionality allowing the binding information to be read from the secure memory by the host device during a binding process. The binding information is cryptographically correlated with the host key information. The host key information is generated by the host device using the binding information read from the secure element and a secret key. The secure element device further includes general functionality only accessible to the host device using the host key information that is generated by the host device. The secure memory includes prevention measures impeding unauthorized entities from obtaining information from the secure memory.

Abstract: The present disclosure is directed to devices and methods for performing screen state detection. The screen state detection may be used in conjunction with any device with a bendable display. The device and method utilizes an electrostatic charge variation sensor to detect whether the display is in an open state or a closed state.

Abstract: An electronic device, comprising plurality of source metal strips in a first metal level; a plurality of drain metal strips in the first metal level; a source metal bus in a second metal level above the first metal level; a drain metal bus, in the second metal level; a source pad, coupled to the source metal bus; and a drain pad, coupled to the drain metal bus. The source metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the first conductive pad; the drain metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the second conductive pad. The first and second subregions are interdigitated.

Abstract: The present disclosure is directed to embodiments of a conductive structure on a conductive barrier layer that separates the conductive structure from a conductive layer on which the conductive barrier layer is present. A gap or crevice extends along respective surfaces of the conductive structure and along respective surfaces of one or more insulating layers. The gap or crevice separates the respective surfaces of the one or more insulating layers from the respective surfaces of the conductive structure. The gap or crevice provides clearance in which the conductive structure may expand into when exposed to changes in temperature. For example, when coupling a wire bond to the conductive structure, the conductive structure may increase in temperature and expand into the gap or crevice. However, even in the expanded state, respective surfaces of the conductive structure do not physically contact the respective surfaces of the one or more insulating layers.

Abstract: A light-emitter device comprising: a body of solid-state material; and a P-N junction in the body, including: a cathode region, having N-type conductivity; an anode region, having P-type conductivity, extending in direct contact with the cathode region and defining a light-emitting surface; and a depletion region around an interface between the anode and the cathode regions. The light-emitting surface has at least one indentation that extends towards the depletion region. The depletion region has a peak defectiveness area, housing irregularities in crystal lattice, in correspondence of said at least one indentation. The defectiveness area, which includes point defects, line defects, bulk defects, etc., is generated as a direct consequence of the formation of the indentation by an indenter or nanoindenter system. In the defectiveness area color centers are generated.

Abstract: A manufacturing method of an electronic device includes: forming a drift layer of an N type; forming a trench in the drift layer; forming an edge-termination structure alongside the trench by implanting dopant species of a P type; and forming a depression region between the trench and the edge-termination structure by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

Abstract: An electric device includes: a first power domain; a second power domain; a third power domain, where during power-up, the third, the second, and the first power domains are configured to be powered up sequentially, where during standby-exit, the first, the second, and the third power domains are configured to be powered up sequentially; isolation paths that provide controlled signal transmission among the first, the second, and the third power domains, where each isolation path includes an isolation circuit between an input power domain and an output power domain of the isolation path; and a control circuit in the first power domain, where for each isolation path, the control circuit is configured to generate an isolation control signal for the isolation circuit, where the isolation circuit is configured enable or disable signal transmission along the isolation path.

Abstract: The MEMS actuator is formed by a body, which surrounds a cavity and by a deformable structure, which is suspended on the cavity and is formed by a movable portion and by a plurality of deformable elements. The deformable elements are arranged consecutively to each other, connect the movable portion to the body and are each subject to a deformation. The MEMS actuator further comprises at least one plurality of actuation structures, which are supported by the deformable elements and are configured to cause a translation of the movable portion greater than the deformation of each deformable element. The actuation structures each have a respective first piezoelectric region.

Abstract: The present disclosure is directed to a contactless card including an actuation security structure that is actuated to provide authorization in accessing identifying information on an integrated circuit within the contactless card. In at least one embodiment, the actuation security structure includes a pair of conductive layers and a pair of electrodes. Ends of the pair of conductive layers overlap respective ones of the pair of electrodes. The ends of the pair of conductive layers are at and in a first elastically deformable region and the respective ones of the pair of electrodes are at and in a second elastically deformable region. An owner of the contactless card may provide authorization to access the identification information on the contactless card by applying force to both the first and second elastically deformable regions inward resulting in the ends of the conductive layers moving into electrical communication with the pair of electrodes.

Abstract: The MEMS device is formed by a substrate and a movable structure suspended on the substrate. The movable structure has a first mass, a second mass and a first elastic group mechanically coupled between the first and the second masses. The first elastic group is compliant along a first direction. The first mass is configured to move with respect to the substrate along the first direction. The MEMS device also has a second elastic group mechanically coupled between the substrate and the movable structure and compliant along the first direction; and an anchoring control structure fixed to the substrate, capacitively coupled to the second mass and configured to exert an electrostatic force on the second mass along the first direction.

Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.

Abstract: A device such as a dosimeter for detecting ionizing radiation, for example, X-ray radiation, in hospitals or the like. The device includes scintillator material configured to produce light as a result of radiation interacting with the scintillator material, and photoelectric conversion circuitry optically coupled to the scintillator material and configured to produce electrical signals via photoelectric conversion of light produced by the scintillator material. The device includes a plurality of photoelectric converters optically coupled with the scintillator material at spatially separated locations. The plurality of photoelectric converters thus produce respective electrical signals by photoelectric conversion of light produced by the scintillator material as a result of radiation interacting with the scintillator material. Improved energy linearity is thus facilitated while providing more efficient detection over the whole energy spectrum of radiation detected.