Abstract: The present disclosure provides supports for microfluidic die that allow for nozzles of the microfluidic die to be on a different plane or face a different direction from electrical contacts on the same support. This includes a rigid support having electrical contacts on a different side of the rigid support with respect to a direction of ejection of the nozzles, and a semi-flexible support or semi-rigid support that allow the electrical contacts to be moved with respect to a direction of ejection of the nozzles. The semi-flexible and semi-rigid supports allow the die to be up to and beyond a 90 degree angle with respect to a plane of the electrical contacts. The different supports allow for a variety of positions of the microfluidic die with respect to a position of the electrical contacts.

Abstract: A semiconductor package includes a lead frame, a die, a discrete electrical component, and electrical connections. The lead frame includes leads and a die pad. Some of the leads include engraved regions that have recesses therein and the die pad may include an engraved region or multiple engraved regions. Each engraved region is formed to contain and confine a conductive adhesive from flowing over the edges of the engraved leads or the die pad. The boundary confines the conductive adhesive to the appropriate location on the engraved lead or the engraved die pad when being placed on the engraved regions. By utilizing a lead frame with engraved regions, the flow of the conductive adhesive or the wettability of the conductive adhesive can be contained and confined to the appropriate areas of the engraved lead or engraved die pad such that a conductive adhesive does not cause cross-talk between electrical components within a semiconductor package or short circuiting within a semiconductor package.

Abstract: A method and near field communications (NFC) system for sensing at least one of an environmental condition or a composition of media in a proximity of the NFC system are provided. In the method and system, a first antenna irradiates an electromagnetic field during a sensor mode. A second antenna detects the electromagnetic field and outputs a voltage representative of the detected electromagnetic field. An NFC controller receives a signal representative of the voltage. The NFC controller determines at least one of the environmental condition or the composition of media based on an association stored in memory between the voltage and the at least one of the environmental condition or the composition of media.

Abstract: An integrated circuit system-on-chip (SOC) includes a semiconductor substrate, a plurality of components made up of transistors formed in the substrate, and a plurality of interconnection lines providing electrical connectivity among the components. Use of a channel-less design eliminates interconnection channels on the top surface of the chip. Instead, interconnection lines are abutted to one another in a top layer of metallization, thus preserving 5-10% of chip real estate. Clock buffers that are typically positioned along interconnection channels between components are instead located within regions of the substrate that contain the components. Design rules for channel-less integrated circuits permit feed-through interconnections and exclude multi-fanout interconnections.

Abstract: A large area electrical contact for use in integrated circuits features a non-planar, sloped bottom profile. The sloped bottom profile provides a larger electrical contact area, thus reducing the contact resistance, while maintaining a small contact footprint. The sloped bottom profile can be formed by recessing an underlying layer, wherein the bottom profile can be crafted to have a V-shape, U-shape, crescent shape, or other profile shape that includes at least a substantially sloped portion in the vertical direction. In one embodiment, the underlying layer is an epitaxial fin of a FinFET. A method of fabricating the low-resistance electrical contact employs a thin etch stop liner for use as a hard mask. The etch stop liner, e.g., HfO2, prevents erosion of an adjacent gate structure during the formation of the contact.

Abstract: Disclosed herein is a method of operating an electronic device. The method includes activating a first sensing device, and determining a first probabilistic context of the electronic device relative to its surroundings. The method includes outputting the first probabilistic context, and determining a confidence measure of the first probabilistic context. Where the confidence measure of the first probabilistic context is below a threshold, the method includes activating a second sensing device, determining a second probabilistic context of the electronic device relative to its surroundings. outputting the second probabilistic context, and determining a confidence measure of the second probabilistic context. Where the confidence measure of the second probabilistic context is above the threshold, the second sensing device is deactivated and the method returns to determining the first probabilistic context.

Abstract: A semi-floating gate transistor is implemented as a vertical FET built on a silicon substrate, wherein the source, drain, and channel are vertically aligned, on top of one another. Current flow between the source and the drain is influenced by a control gate and a semi-floating gate. Front side contacts can be made to each one of the source, drain, and control gate terminals of the vertical semi-floating gate transistor. The vertical semi-floating gate FET further includes a vertical tunneling FET and a vertical diode. Fabrication of the vertical semi-floating gate FET is compatible with conventional CMOS manufacturing processes, including a replacement metal gate process. Low-power operation allows the vertical semi-floating gate FET to provide a high current density compared with conventional planar devices.

Abstract: A method of forming a finFET transistor device includes forming a crystalline, compressive strained silicon germanium (cSiGe) layer over a substrate; masking a first region of the cSiGe layer so as to expose a second region of the cSiGe layer; subjecting the exposed second region of the cSiGe layer to an implant process so as to amorphize a bottom portion thereof and transform the cSiGe layer in the second region to a relaxed SiGe (rSiGe) layer; performing an annealing process so as to recrystallize the rSiGe layer; epitaxially growing a tensile strained silicon layer on the rSiGe layer; and patterning fin structures in the tensile strained silicon layer and in the first region of the cSiGe layer.

Abstract: A sensor chip includes registers storing and outputting configuration data, an extraction circuit receiving digital data and extracting features of the digital data in accordance with the configuration data, and a classification circuit applying a decision tree to the extracted features to generate a context of an electronic device into which the sensor chip is incorporated relative to its surroundings, the decision tree operating according to the configuration data. The classification unit outputs the context to the registers for storage. The configuration data includes which features for the extraction circuit to extract from the digital data, and a structure for the decision tree. The structure for the decision tree includes conditions that the decision tree is to apply to the at least one extracted feature, and outcomes to be effectuated based upon whether the extracted features meet or do not meet the conditions.

Abstract: The disclosure describes methods and apparatus for quickly prototyping of a solution developed using one or more sensing devices (e.g., sensors), functional blocks, algorithm libraries, and customized logic. The methods produce firmware executable by a processor (e.g., a microcontroller) on an embedded device such as a development board, expansion board, or the like. By performing these methods on the apparatus described, a user is able to create a function prototype without having deep knowledge of the particular sensing device or any particular programming language. Prototypes developed as described herein enable the user to rapidly test ideas and develop sensing device proofs-of-concept. The solutions produced by the methods and apparatus improve the functioning of the sensor being prototyped and the operation of the embedded device where the sensor is integrated.

Abstract: Motion activity data is collected from at least one sensor. An initial motion activity classifier function is applied to the motion activity data to produce an initial motion activity posteriorgram. Pre-processing and segmenting the motion activity data into windows produces segmented motion activity data from which sensor specific features are extracted. An updated motion activity classifier function is generated from the extracted sensor specific features. Subsequent motion activity data is also collected from the at least one sensor, and the updated motion activity classifier function is applied to the subsequent motion activity data to produce an updated motion activity posteriorgram.

Abstract: A method and apparatus for determining space occupancy and performing volumetric measurement of a transportation system using a time-of-flight (TOF) sensor array are provided. In the method and apparatus, the TOF sensor array, which is mounted in a transportation system and includes a plurality of TOF sensors, outputs a plurality of distance measurements made by the plurality of TOF sensors, respectively. In the method and apparatus, a map of one or more objects positioned in the transportation system is generated based on the plurality of distance measurements. The map is output for display to a user by a display.

Abstract: A portable device includes one or more memories and travel mode control circuitry coupled to the one or more memories. The travel mode control circuitry, in operation, monitors motion data and temperature data to detect a first travel state of the device. When the first travel state of the device is detected, motion data and pressure data are monitored to detect a transition from the first travel state to a second travel state of the device. When the transition to the second travel state of the device is detected, one or more control signals are generated to cause the device to enter a first travel mode of operation.

Abstract: Processes and overturned thin film device structures generally include a gate having a concave shape defined by three faces. The processes generally include forming the overturned thin film device structures such that the channel self-aligns to the gate and the source/drain contacts include a self-aligned step height.

Abstract: A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

Abstract: A vacuum channel transistor having a vertical gate-all-around (GAA) architecture provides high performance for high-frequency applications, and features a small footprint compared with existing planar devices. The GAA vacuum channel transistor features stacked, tapered source and drain regions that are formed by notching a doped silicon pillar using a lateral oxidation process. A temporary support structure is provided for the pillar during formation of the vacuum channel. Performance of the GAA vacuum channel transistor can be tuned by replacing air in the channel with other gases such as helium, neon, or argon. A threshold voltage of the GAA vacuum channel transistor can be adjusted by altering dopant concentrations of the silicon pillar from which the source and drain regions are formed.

Abstract: According to principles of the disclosure as explained herein, selected leads are electrically connected through metal strips to the lead frame until the end of the manufacturing process. The lead frame is grounded through the manufacturing process to prevent any ESD event from causing damage to the protected leads. In the final singulation step, the leads are electrically isolated from each other and from the lead frame, thus maintaining protection from a potential ESD event up until the final package singulation step.

Abstract: A protective circuit for an apparatus includes an accelerometer having an output and a microcontroller coupled to the output of the accelerometer. The protective circuit also includes a switch for controlling the apparatus coupled to an output of the microcontroller and a load coupled to the switch. A power source is coupled to the load and the switch. In operation the microcontroller is cable of sending a signal to the switch to turn of power to the load when a dangerous condition as detected from the accelerometer data has occurred.

Abstract: The method of manufacturing a structure comprising one or several strained semiconducting zones capable of forming one or several transistor channel regions, the method including the following steps: a) providing a substrate coated with a masking layer wherein there are one or several first slits exposing one or several first oblong semiconducting portions made of a first semiconducting material and extending in a first direction, b) making a second semiconducting material grow with a mesh parameter different from the mesh parameter of the first semiconducting material, so as to form one or several first semiconducting blocks strained along the first direction, on said one or several first oblong semiconducting portions.

Abstract: An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.