Patents Assigned to STMicroelectronics (Research & Development) Ltd.
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Patent number: 12038801Abstract: Disclosed herein is a debug system including a host computer, a microcontroller, and a debug probe for interface therebetween for performing debug trace operations. The debug probe samples the current drawn by the microcontroller. The debug probe and host computer cooperate so as to acquire and accurately align trace data and the samples of the current drawn by the microcontroller. Techniques for performing this alignment are described herein and enable for accurate inferences to be drawn about the current drawn by the microcontroller during different program operations.Type: GrantFiled: December 14, 2022Date of Patent: July 16, 2024Assignee: STMicroelectronics International N.V.Inventors: Sylvain Chavagnat, Simon Valcin
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Patent number: 12039293Abstract: System, method, and circuitry for generating a linker model for use by a toolchain associated with a programmable computing device. One or more regions in the memory resources available to the programmable computing devices is defined for used by an application executing on the programmable computing device. One or more sections is defined for those regions for use by the application. Resource boundaries are generated for the application based on the defined regions and the defined sections. A user is enabled to modify the defined regions or the defined sections or the generated resource boundaries. A linker model is then generated based on the available memory resources, the defined regions, the defined sections, and the generated resource boundaries. This linker model is then utilized to generate a linker script for the programmable computing device based the linker syntax compatible with a toolchain linker for the programmable computing device.Type: GrantFiled: October 7, 2022Date of Patent: July 16, 2024Assignee: STMicroelectronics FranceInventor: Tarek Bochkati
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Patent number: 12038454Abstract: A MEMS inertial sensor includes a supporting structure and an inertial structure. The inertial structure includes at least one inertial mass, an elastic structure, and a stopper structure. The elastic structure is mechanically coupled to the inertial mass and to the supporting structure so as to enable a movement of the inertial mass in a direction parallel to a first direction, when the supporting structure is subjected to an acceleration parallel to the first direction. The stopper structure is fixed with respect to the supporting structure and includes at least one primary stopper element and one secondary stopper element. If the acceleration exceeds a first threshold value, the inertial mass abuts against the primary stopper element and subsequently rotates about an axis of rotation defined by the primary stopper element. If the acceleration exceeds a second threshold value, rotation of the inertial mass terminates when the inertial mass abuts against the secondary stopper element.Type: GrantFiled: November 16, 2022Date of Patent: July 16, 2024Assignee: STMicroelectronics S.r.l.Inventors: Francesco Rizzini, Gabriele Gattere, Sarah Zerbini
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Patent number: 12040013Abstract: A memory array includes memory cells forming a data word location accessed in response to a word line signal. A data sensing circuit configured to sense data on bit lines associated with the memory cells. The sensed data corresponds to a current data word stored at the data word location. A data latching circuit latches the sensed data for the current data word from the data sensing circuit. A data modification circuit then performs a mathematical modify operation on the current data word to generate a modified data word. The modified data word is then applied by a data writing circuit to the bit lines for writing back to the memory cells of the memory array at the data word location. The operations are advantageously performed within a single clock cycle.Type: GrantFiled: July 11, 2022Date of Patent: July 16, 2024Assignee: STMicroelectronics International N.V.Inventors: Praveen Kumar Verma, Harsh Rawat
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Patent number: 12038605Abstract: An embodiment sensor includes a hybrid waveguide. The hybrid waveguide includes a first dielectric optical waveguide lying on and in contact with a dielectric support layer; a first surface waveguide optically coupled to the first dielectric optical waveguide, parallel to the first dielectric optical waveguide, and lying on the dielectric support layer. The first surface waveguide has a lateral surface configured to guide a surface mode. The hybrid waveguide includes a cavity intended to be filled with a dielectric fluid, separating laterally the first dielectric optical waveguide from the lateral surface of the first surface waveguide.Type: GrantFiled: October 28, 2021Date of Patent: July 16, 2024Assignees: UNIVERSITE CLAUDE BERNARD LYON 1, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON, STMicroelectronics (Crolles 2) SASInventors: Michele Calvo, Stephane Monfray, Paul Charette, Guillaume Beaudin, Regis Orobtchouk
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Patent number: 12039092Abstract: The present description concerns an integrated circuit including, between first and second terminals having a first voltage applied therebetween, a load configured to execute instructions, a circuit for delivering a digital signal having at least two bits from a binary signal and a current output digital-to-analog converter controlled by the digital signal and coupled between the first and second terminals in parallel with the load.Type: GrantFiled: December 7, 2021Date of Patent: July 16, 2024Assignees: STMicroelectronics France, STMicroelectronics (Alps) SASInventors: Julien Goulier, Pascal Bernon
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Patent number: 12040628Abstract: A bridge rectifier is controlled by control circuitry to act a “regtifier” which both regulates and rectifies without the use of a traditional voltage regulator. To accomplish this, the gate voltages of transistors of the bridge that are on during a given phase may be modulated to dissipate excess power. Gate voltages of transistors of the bridge that are off during the given phase may alternatively or additionally be modulated to dissipate excess power. The regtifier may act as two half-bridges that each power a different voltage converter, with those voltage converters powering a battery. The voltage converters may be switched capacitor voltage converters that switch synchronously with switching of the two half-bridges as they perform rectification.Type: GrantFiled: January 14, 2022Date of Patent: July 16, 2024Assignee: STMicroelectronics Asia Pacific Pte LtdInventor: Yannick Guedon
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Patent number: 12040335Abstract: A sensor includes pixels supported by a substrate doped with a first conductivity type. Each pixel includes a portion of the substrate delimited by a vertical insulation structure with an image sensing assembly and a depth sensing assembly. The image sensing assembly includes a first region of the substrate more heavily doped with the first conductivity type and a first vertical transfer gate completely laterally surrounding the first region. Each of the depth sensing assemblies includes a second region of the substrate more heavily doped with the first conductivity type a second vertical transfer gate opposite a corresponding portion of the first vertical transfer gate. The second region is arranged between the second vertical transfer gate and the corresponding portion of the first vertical transfer gate.Type: GrantFiled: September 14, 2022Date of Patent: July 16, 2024Assignee: STMicroelectronics (Crolles 2) SASInventor: Francois Roy
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Patent number: 12038471Abstract: An electronic device such as an e-fuse includes analog circuitry configured to be set to one or more self-test configurations. To that effect the device has self-test controller circuitry in turn including: an analog configuration and sensing circuit configured to set the analog circuitry to one or more self-test configurations and to sense test signals occurring in the analog circuitry set to such self-test configurations, a data acquisition circuit configured to acquire and convert to digital the test signals sensed at the analog sensing circuit, and a fault event detection circuit configured to check the test signals converted to digital against reference parameters. The device includes integrated therein a self-test controller configured to control parts or stages of the device to configure circuits, acquire data and control test execution under the coordination of a test sequencer.Type: GrantFiled: August 19, 2021Date of Patent: July 16, 2024Assignee: STMicroelectronics S.r.l.Inventors: Mirko Dondini, Roberto Crisafulli, Calogero Andrea Trecarichi, Vincenzo Randazzo
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Publication number: 20240235573Abstract: An integrated circuit includes a continuous time delta sigma analog-to-digital converter (CTDS ADC) and a test circuit for testing the CTDS ADC. The test circuit converts multibit digital reference data to a single-bit digital stream. The test circuit then passes the single-bit digital stream to a finite impulse response digital-to-analog converter (FIR DAC). The FIR DAC converts the single-bit digital stream to an analog test signal. The analog test signal is then passed to the CTDS ADC. The CTDS ADC converts the analog test signal to digital test data. The test circuit analyzes the digital test data to determine the accuracy of the CTDS ADC.Type: ApplicationFiled: December 26, 2023Publication date: July 11, 2024Applicant: STMicroelectronics International N.V.Inventors: Ankur BAL, Abhishek JAIN, Sharad GUPTA
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Publication number: 20240235546Abstract: A resettable digital stage operates when a supply voltage is higher than a threshold. A non-volatile memory stores a digital code read by a reading stage. A main power-on reset circuit generates a main reset signal controlling reset of the reading stage. A resettable volatile memory coupled to the reading stage stores a default value when reset. An auxiliary power-on reset circuit generates an auxiliary reset signal controlling reset of the volatile memory. Upon deactivation of the reset, the reading stage loads the digital code into the volatile memory. The main power-on reset circuit functions in a non-trimmed configuration response to the stored default value and in a trimmed configuration responsive to the stored digital code. The main power-on reset circuit has first and second operative thresholds which respectively fall within a first and second non-trimmed voltage range or within a first and second trimmed voltage range.Type: ApplicationFiled: January 10, 2024Publication date: July 11, 2024Applicant: STMicroelectronics International N.V.Inventors: Riccardo CONDORELLI, Antonino MONDELLO, Michele Alessandro CARRANO, Daniele MANGANO, Fabien LAPLACE, Luc GARCIA, Michel CUENCA
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Publication number: 20240231410Abstract: An electronic circuit includes a reference voltage circuit and a circuit for checking the starting operation of the reference voltage circuit. The reference voltage circuit includes a first stack of a first transistor and second transistor receiving first and second control signals, respectively. The start check circuit includes a first elementary test circuit including a second stack of a third transistor and fourth transistor receiving the first and second control signals, respectively. An output of the first elementary test circuit delivers a first binary signal indicative of proper starting operation of the reference voltage circuit.Type: ApplicationFiled: October 12, 2023Publication date: July 11, 2024Applicants: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Alps) SASInventors: Julien GOULIER, Nicolas GOUX, Marc JOISSON
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Publication number: 20240228264Abstract: A sensor package includes a packaging formed by a package bottom, first and second sidewalls extending upwardly from first and second opposite sides of the package bottom, and third and fourth sidewalls extending upwardly from third and fourth opposite sides of the package bottom, the sidewalls and package bottom defining a cavity. An integrated circuit is attached to the package bottom. A plate extends between two of the sidewalls within the cavity and is spaced apart from the package bottom. Sensors are attached to a top surface of the plate on opposite sides of an opening. Wire bondings electrically connect pads on a top face of the sensor to corresponding pads on a top face of the integrated circuit, for example by passing through the opening in the plate or passing past a side end of the plate. A lid extends across and between the sidewalls to close the cavity.Type: ApplicationFiled: October 25, 2022Publication date: July 11, 2024Applicant: STMicroelectronics International N.V.Inventor: Roseanne DUCA
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Patent number: 12033715Abstract: The present disclosure is directed to arranging user data memory cells and test memory cells in a configurable memory array that can perform both differential and single ended read operations during memory start-up and normal memory use, respectively. Different arrangements of the user data memory cells and the test memory cells in the memory array result in increased effectiveness of memory array, in terms of area optimization, memory read accuracy and encryption for data security.Type: GrantFiled: December 7, 2022Date of Patent: July 9, 2024Assignee: STMicroelectronics International N.V.Inventors: Vikas Rana, Arpit Vijayvergia
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Patent number: 12033926Abstract: A semiconductor chip is mounted on a leadframe. A first portion of an insulating package for the semiconductor chip is formed from laser direct structuring (LDS) material molded onto the semiconductor chip. A conductive formation (provided by laser-drilling the LDS material and plating) extends between the outer surface of the first portion of insulating package and the semiconductor chip. An electrically conductive clip is applied onto the outer surface of the first portion of the insulating package, with the electrically conductive clip electrically coupled to the conductive formation and the leadframe. A second portion of the insulating package is made from package molding material (epoxy compound) molded onto the electrically conductive clip and applied onto the outer surface of the first portion of the insulating package.Type: GrantFiled: October 11, 2021Date of Patent: July 9, 2024Assignee: STMicroelectronics S.r.l.Inventor: Federico Giovanni Ziglioli
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Patent number: 12032747Abstract: The present disclosure is directed to devices and methods for detecting dimming gestures using infrared detection. Infrared signals are detected using a thermal metal-oxide-semiconductor (TMOS) infrared (IR) sensor solution. The TMOS IR sensor is highly accurate and has low power consumptions compared to traditional IR sensors that utilize IR receivers.Type: GrantFiled: February 10, 2023Date of Patent: July 9, 2024Assignee: STMicroelectronics International N.V.Inventors: Stefano Paolo Rivolta, Roberto Mura, Edoardo Nagali
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Patent number: 12030381Abstract: A measurement of the rotation speed of an object is made using a time-of-flight sensor configured to detect a passing of one or more of elements of the object through a given position. The time-of-flight sensor is further mounted on a one-person vehicle configured to protect the one-person vehicle against collisions through the making a time-of-flight measurement of a relative speed between the one-person vehicle and an obstacle.Type: GrantFiled: February 15, 2021Date of Patent: July 9, 2024Assignee: STMicroelectronics (Grenoble 2) SASInventor: Thomas Perotto
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Patent number: 12034046Abstract: Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.Type: GrantFiled: June 28, 2022Date of Patent: July 9, 2024Assignee: STMicroelectronics (Crolles 2) SASInventor: Nicolas Guitard
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Patent number: 12033663Abstract: A circuit includes a set of input nodes configured to be coupled to respective ones of the windings of a spindle motor in a hard disk drive to sense the voltages applied to the windings. A set of output nodes is configured to provide output signals indicative of direction of flow of the currents through the windings. Level shifters are coupled to respective input nodes in the set of input nodes and have level-shifted output nodes configured to provide down-shifted replicas of the voltages at the respective input nodes in the set of input nodes. Flip-flops have inputs coupled to respective ones of the level-shifted output nodes of the level shifters and outputs configured to provide the output signals coupled to respective output nodes.Type: GrantFiled: June 29, 2023Date of Patent: July 9, 2024Assignee: STMicroelectronics S.r.l.Inventor: Ezio Galbiati
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Patent number: 12032265Abstract: A semiconductor device can be formed by etching a cavity in a first silicon layer that overlies an insulating layer, epitaxially growing a germanium or silicon-germanium layer in the cavity, epitaxially growing a second silicon layer in the cavity, etching the second silicon layer and the germanium or silicon-germanium layer to the floor of the cavity to define a first strip in the second silicon layer and a second strip in the germanium or silicon-germanium layer, selectively etching a portion of the second strip to decrease the width of the second strip, filling cavity portions arranged on either side of the first and second strips with an insulator, depositing an upper insulating layer over the first and second strips, and bonding a layer of III-V material to the upper insulating layer.Type: GrantFiled: May 15, 2023Date of Patent: July 9, 2024Assignee: STMicroelectronics (Crolles 2) SASInventors: Frédéric Boeuf, Cyrille Barrera