Abstract: A distance from an apparatus to at least one object is determined by generating a first signal and generating light modulated by the first signal to be emitted from the apparatus. Light reflected by the at least one object is detected using a Time-of-flight detector array, wherein each array element of the Time-of-flight detector array generates an output signal from a series of photon counts over a number of consecutive non-overlapping time periods. The output signals are compared to the first signal to determine at least one signal phase difference. From this at least one signal phase difference a distance from the apparatus to the at least one object is determined.

Abstract: An electronic device includes a time-of-flight sensor configured to sense a distance between the electronic device and at least one object proximate the electronic device. Processing circuitry is coupled to the time-of-flight sensor and controls access to the electronic device based on the sensed distance. The electronic device may include a digital camera that the processing circuitry controls to perform facial or iris recognition utilizing the sensed distance from the time-of-flight sensor.

Abstract: A combining network for an array of SPAD devices includes: synchronous sampling circuits, wherein each synchronous sampling circuit is coupled to an output of a corresponding SPAD device and is configured to generate a pulse or an edge each time an event is detected; and a summation circuit coupled to an output of each of the synchronous sampling circuits and configured to count a number of pulses or edges to generate a binary output value.

Abstract: An embodiment method of manufacturing an avalanche diode includes forming a first trench in a substrate material, filling the first trench with a first material that comprises a dopant, and causing the dopant to diffuse from the first trench to form part of a PN junction. An avalanche diode array can be formed to include a number of the avalanche diodes.

Abstract: A ranging system includes a first ranging unit with a first laser driver, a first control circuit generating a first trigger signal, and a first data interface with a first trigger transmitter transmitting the first trigger signal over a first data transmission line and a first calibration receiver receiving a first calibration signal over a second data transmission line. A second ranging unit includes a second laser driver, a second data interface with a second trigger receiver receiving the first trigger signal and a second calibration transmitter transmitting the first calibration signal, and a second control circuit generating the first calibration signal in response to receipt of the first trigger signal. The first control circuit determines an elapsed time between transmission of the first trigger signal and receipt of the first calibration signal. The determined elapsed time is used to synchronize activation of the first and second laser drivers.

Abstract: An electronic device includes laser emitters, and a laser driver generating a laser drive signal for the laser emitters based upon a feedback control signal. A steering circuit selectively steers the laser drive signal to a different selected one of the plurality of laser emitters and prevents the laser drive signal from being steered to non-selected ones of the plurality of laser emitters, during each of a plurality of time periods. Control circuitry senses a magnitude of a current of the laser drive signal and generates the feedback control signal based thereupon. The feedback control signal is generated so as to cause the laser driver to generate the laser drive signal as having a current with a substantially constant magnitude.

Abstract: A camera module with a fixed near field focus is configured to capture a single image. That single image is segmented by an image divider a number of regions. A focus metric determiner then determines a focus metric for each of the regions. A depth map generator maps the focus metric into a depth value for each of the regions and combines the depth values to generate a depth map.

Abstract: The present disclosure relates to an image sensor that includes first and second pixels. One or more transistors of the first pixel share an active region with one or more transistors of the second pixel.

Abstract: A transmit integrated circuit includes a light source configured to generate a beam of light. A receive integrated circuit includes a first photosensor. A transmit optic is mounted over the transmit and receive integrated circuits. The transmit optic is formed by a prismatic light guide and is configured to receive the beam of light. An annular body region of the transmit optic surrounds a central opening which is aligned with the first photosensor. The annular body region includes a first reflective surface defining the central opening and further includes a ring-shaped light output surface surrounding the central opening. Light is output from the ring-shaped light output surface in response to light which propagates within the prismatic light guide in response to the received beam of light and which reflects off the first reflective surface.

Abstract: An embodiment method of operating an imaging device including a sensor array including a plurality of pixels, includes: capturing a first low-spatial resolution frame using a subset of the plurality of pixels of the sensor array; generating, using a processor coupled to the sensor array, a first depth map using raw pixel values of the first low-spatial resolution frame; capturing a second low-spatial resolution frame using the subset of the plurality of pixels of the sensor array; generating, using the processor, a second depth map using raw pixel values of the second low-spatial resolution frame; and determining whether an object has moved in a field of view of the imaging device based on a comparison of the first depth map to the second depth map.

Abstract: The present disclosure is directed to a diode including a first doped structure, doped with a first type of material and forming at least part of an isolation structure for the diode; at least one contact structure located within the first doped structure, the at least one contact structure forming one of the cathode or anode of the diode; a second doped structure, doped with a second type of material, and forming at least one depletion region or PN junction with the first doped structure; at least one second contact structure located within the second doped structure, the at least one second contact structure forming the other of the anode or the cathode of the diode; at least one further contact structure, doped with the first type of material, the at least one further contact structure forming at least one further depletion region or further PN junction, such that the at least one further depletion region is configured to steer charge from the at least one depletion region and thus decrease the sensitivity

Abstract: An example device has optical emitters for emitting incident radiation within a field of view and optical detectors for receiving reflected radiation. Based on the incident radiation and the reflected radiation, a histogram indicative of a number of photon events that are detected by the optical detectors over time bins is generated. The time bins is indicative of time differences between emission of the incident radiation and reception of the reflected radiation. The device further includes; a processor programmed to iteratively process the histogram by executing an expectation-maximization algorithm to detect a presence of objects located in the field of view of the device.

Abstract: In some embodiments, a ToF sensor includes an illumination source module, a transmitter lens module, a receiver lens module, and an integrated circuit that includes a ToF imaging array. The ToF imaging array includes a plurality of SPADs and a plurality of ToF channels coupled to the plurality of SPADs. In a first mode, the ToF imaging array is configured to select a first group of SPADs corresponding to a first FoV. In a second mode, the ToF imaging array is configured to select a second group of SPADs corresponding to a second FoV different than the first FoV.

Abstract: The present disclosure relates to receiving an input signal; generating an output signal by integrating a leaked signal over an integration time, wherein the leaked signal is obtained based on a dampening signal, a leak factor and the input signal; and providing the output signal.

Abstract: A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal.

Abstract: The present disclosure relates to a sensor comprising: an array of photodetectors comprising a first subarray of at least one photodetector and a second subarray of at least one photodetector; a first optical arrangement to direct incoming photons toward the first subarray; and a second optical arrangement to direct incoming photons toward the second subarray.

Abstract: A device such as a laser diode is provided with a monitoring arrangement. The monitoring arrangement has voltage to current convertors arranged to provide respectively currents which are proportional to the respective voltages on an anode and on a cathode of the laser diode. The monitoring arrangement provides a first output signal when the laser diode is on too long. That output signal is used to cause the laser diode to be switched off.

Abstract: In an embodiment, an image sensor includes a semiconductor substrate, an epitaxial layer disposed over the semiconductor substrate, a first heavily doped region disposed in the epitaxial layer, and a shallow trench isolation region disposed in the epitaxial layer and surrounding the first heavily doped region. The semiconductor substrate and the epitaxial layer are of a first doping type and the semiconductor substrate is coupled to a reference potential node. The first heavily doped region is of a second doping type opposite to the first doping type. The epitaxial layer, the first heavily doped region, and the shallow trench isolation region are part of a p-n junction photodiode configured to operate in the near ultraviolet region.

Abstract: The disclosure concerns a housing for a light source mounted on a substrate, the housing comprising: a molded body having an opening permitting the passage of a light beam generated by the light source; one or more surfaces for receiving a diffuser; and first and second conducting pins traversing the molded body.

Abstract: A laser diode driver circuit includes a first pair of contacts and connectors coupled to an anode of the laser diode. An inductance of each of the first pair of contacts and connectors is the same. A second pair of contacts and connectors are coupled to a cathode of the laser diode. An inductance of each of the second pair of contacts and connectors is the same. The laser diode driver circuit also includes current driving circuitry.