Abstract: Single gate and dual gate FinFET devices suitable for use in an SRAM memory array have respective fins, source regions, and drain regions that are formed from portions of a single, contiguous layer on the semiconductor substrate, so that STI is unnecessary. Pairs of FinFETs can be configured as dependent-gate devices wherein adjacent channels are controlled by a common gate, or as independent-gate devices wherein one channel is controlled by two gates. Metal interconnects coupling a plurality of the FinFET devices are made of a same material as the gate electrodes. Such structural and material commonalities help to reduce costs of manufacturing high-density memory arrays.

Abstract: A half-bridge driver circuit periodically repeats switching cycles by closing a first FET via a first drive signal, detecting an instant when a current flowing through the first FET reaches a threshold and then opening the first FET and closing a second FET via a second drive signal. An error amplifier generates a control voltage by comparing a feedback signal with a reference signal, and a variable current generator generates a first current as a function of the control voltage. The error amplifier includes a proportional-integral controller, and a slope compensation circuit that generates a second current as a ramp signal. The threshold is generated by subtracting the second current from the first current. In response to detecting the instant, the second current is sampled and a signal indicative of the threshold is generated by subtracting the sampled second current from the first current.

Abstract: At least one transmission of scrambled data with a pseudo-random sequence generated by a scrambling polynomial and an initialization value is performed between a transmitter and a receiver. Prior to the transmission, transmitter and the receiver engage in a secret negotiation phase to specifically determine the scrambling polynomial and the initialization value for the at least one transmission.

Abstract: Articles carried by a carrier are processed in a sequence of processing steps that includes a plating step where a base layer of plating material is plated on a surface of the carrier. The plating material plated on the surface of the carrier is selectively stripped to partially remove the plating material to reduce e thickness of the base layer of plating material plated present on the surface of the carrier. A residual protective layer of plating material having the reduced thickness is left on the surface of the carrier.

Abstract: A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.

Abstract: An integrated circuit includes a semiconductor substrate and at least one memory cell provided with a vertical gate selection transistor buried in the substrate and a floating gate state transistor. The floating gate state transistor covers a first active region and a second active region of the substrate delimited by lateral isolation regions. The memory cell includes a lateral isolation region thickness (in breadth) dimension between a sidewall of the vertical gate of the buried transistor and the second active region.

Abstract: A microelectromechanical device includes: a supporting body, containing semiconductor material; a movable mass, constrained to the supporting body with a relative degree of freedom with respect to a first motion direction perpendicular to the supporting body; and at least one stopping structure, configured to limit out-of-plane movements of the movable mass along the first motion direction. The stopping structure includes: first elements, extending parallel to the first motion direction and anchoring the stopping structure to the supporting body; and a second element, extending transversally to the first elements, surmounting and connecting the first elements.

Abstract: MEMS device having a substrate of semiconductor material; a first structural layer of semiconductor material, on the substrate; a second structural layer of semiconductor material, on the first structural layer; an active portion, accommodating active structures formed in the first structural layer and/or in the second structural layer; a connection portion, accommodating a plurality of connection structures and arranged laterally to the active portion; and a plurality of conductive regions, arranged on the substrate and extending between the active portion and the connection portion. Each connection structure is formed by a first connection portion, in electrical contact with a respective conductive region and formed in the first structural layer, and by a second connection portion, on the first connection portion and in electrical continuity therewith, the second connection portion formed in the second structural layer. The first connection portion has a greater thickness than the second connection portion.

Abstract: A wireless charging transmitter device is includes a square wave signal generation circuit. The square wave signal generation circuit is formed by a first PMOS transistor switching circuit having a group of PMOS performance transistors and at least one PMOS functionality transistor, and a second NMOS transistor switching circuit having a group of NMOS performance transistors and at least one NMOS functionality transistor.

Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

Abstract: A receiver or transmitter circuit includes a signal propagation path between a radio-frequency (RF) signal node and a baseband processing circuit. Variable gain circuitry is configured to vary a gain applied to a signal propagating between the RF signal node and the baseband processing circuit. The variable gain circuitry varies the gain via first, coarse steps as well as via second, fine steps. This facilitates fine matching of the gains experienced by signals propagating over the in-phase and the quadrature branches in the transmitter and/or receiver circuit.

Abstract: A low power crystal oscillator circuit has a high power part and a low power part. Crystal oscillation is initialized using the high power part. An automatic amplitude control circuit includes a current subtractor that decreases current in the high power part as an amplitude of the crystal oscillation increases. A current limiting circuit may limit current in the low power part in order to further reduce power consumption by the low power crystal oscillator circuit. Additionally, an automatic amplitude detection circuit may turn off the high power part after the amplitude of the crystal oscillation reaches a predetermined level in order to further reduce power consumption of the low power crystal oscillator circuit, and may turn back on the high power part after the amplitude of the crystal oscillation reaches a second predetermined level in order to maintain the crystal oscillation.

Abstract: The integrated circuit includes a power amplifier, an antenna, and a matching and filtering network including a direct current power supply stage on an output node of the power amplifier, a first section, and a second section. The direct current power supply stage and the two sections include inductor-capacitor “LC” arrangements configured to have an impedance that is matched to the output of the power amplifier in the fundamental frequency band. The LC arrangements of the direct current power supply stage and of the first section are furthermore configured to have resonant frequencies that are respectively adapted to attenuate harmonic frequency bands of the fundamental frequency band.

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

Abstract: A system-on-a-chip includes a first digital domain and a second digital domain. An interface circuit includes a level-shifting circuit for converting a signal between the first digital domain and the second digital domain. The first digital domain includes a control circuit configured to generate a control signal for transmission to the second digital domain. The control signal includes a pulse having a nominal duration adapted to the level-shifting circuit. At the input of the level-shifting circuit, the interface circuit includes, in the first domain, a conditional pulse-stretching circuit that lengthens a duration of the pulse of the control signal to at least the nominal duration when a duration of the pulse of the control signal is shorter than the nominal duration and non-zero.

Abstract: An optical package includes a substrate made of a first material having an upper surface and a lower surface. The substrate further includes at least one cavity opening onto an upper surface of the substrate. Electrical connection vias extend through the substrate. An electronic integrated circuit chip is mounted on the upper surface of the substrate in a position so as to cover the at least one cavity. The electronic integrated circuit chip includes an integrated optical sensor. Each cavity is filled with a second material having a thermal conductivity greater than the thermal conductivity of the first material. The electrical connection vias are arranged on either side of each cavity and between two cavities.

Abstract: A method for making a phase change memory includes a step of forming an array of phase change memory cells, with each cell being separated from neighboring cells in the same line of the array and from neighboring cells in the same column of the array, by the same first distance. The method further includes a step of etching one memory cell out of N, with N being at least equal to 2, in each line or each column.

Abstract: A microelectromechanical mirror device includes a supporting frame of semiconductor material and a plate of semiconductor material. The plate is connected to the supporting frame so as to be orientable around at least one rotation axis. A reflective layer is arranged on a first region of the plate. A piezoelectric actuation structure extends on a second region of the plate adjacent to the reflective layer. The piezoelectric actuation structure is configured to apply forces such as to modify a curvature of the plate.

Abstract: A resettable digital stage operates when a supply voltage is higher than a threshold. A non-volatile memory stores a digital code read by a reading stage. A main power-on reset circuit generates a main reset signal controlling reset of the reading stage. A resettable volatile memory coupled to the reading stage stores a default value when reset. An auxiliary power-on reset circuit generates an auxiliary reset signal controlling reset of the volatile memory. Upon deactivation of the reset, the reading stage loads the digital code into the volatile memory. The main power-on reset circuit functions in a non-trimmed configuration response to the stored default value and in a trimmed configuration responsive to the stored digital code. The main power-on reset circuit has first and second operative thresholds which respectively fall within a first and second non-trimmed voltage range or within a first and second trimmed voltage range.

Abstract: A circuit detects zero crosses in an input-signal and includes a low-pass-filter (LPF) receiving the input-signal and introducing a phase-shift dependent on the frequency thereof. Filter circuitry receives the output of the LPF, applies a fixed phase-shift thereto, and adjusts phase and DC-offset thereof based on control signals to produce a filtered output-signal. Control circuitry has a zero-crossing detector receiving the input-signal and the filtered output-signal, detecting zero-crossings of the input-signal and the filtered output-signal, asserting a digital zero cross signal at each zero crossing, and determining a phase-shift and DC-offset between the input-signal and filtered output-signal.