Abstract: An integrated circuit includes a memory cell incorporating an antifuse device. The antifuse device includes a state transistor having a control gate and a second gate that is configured to be floating. A dielectric layer between the control gate and the second gate is selectively blown in order to confer a broken-down state on the antifuse device where the second gate is electrically coupled to the control gate for storing a first logic state. Otherwise, the antifuse device is in a non-broken-down state for storing a second logic state.

Abstract: A method for encoding a data value to be transmitted on an SPI serial bus includes an operation to modify a status register of a memory, at least at one chosen time instant, as a function of all or part of the data value to be transmitted.

Abstract: The present description concerns a method of forming a track in a first layer, including a) forming a cavity in the first layer; b) totally filling the cavity with a first material; and c) partially removing the first material from the upper portion of the cavity, to form the track made of the first material.

Abstract: A method of manufacturing electronic chips containing low-dispersion components, including the steps of: mapping the average dispersion of said components according to their position in test semiconductor wafers; associating, with each component of each chip, auxiliary correction elements; activating by masking the connection of the correction elements to each component according to the initial mapping.

Abstract: A memory transistor for a non-volatile memory cell includes a source region and a drain region implanted in a semiconductor substrate. The source region is spaced from the drain region. A double gate region for the memory transistor extends at least partly in depth in the semiconductor substrate between the source region and the drain region and further extends beyond this source region and this drain region. The memory cell further includes a selection transistor having a gate region that partially extends over the double gate region for the memory transistor.

Abstract: An integrated circuit includes a first substrate. A MOS transistor has a first polysilicon region electrically isolated from the first substrate and including a gate region. A second polysilicon region is electrically isolated from the first polysilicon region and from the first substrate. The second polysilicon region includes a source region, a substrate region and a drain region of the MOS transistor. The first polysilicon region is located between an area of the first substrate and the second polysilicon region.

Abstract: The disclosure relates to integrated circuits including one or more rows of transistors and methods of forming rows of transistors. In an embodiment, an integrated circuit includes a row of bipolar transistors including a first semiconductor layer having a plurality of first conduction regions, a second semiconductor layer having a second conduction region, a common base between the first semiconductor layer and the second semiconductor layer, and a plurality of insulator walls extending in a first direction. The first conduction regions are separated from one another by the insulator walls. The integrated circuit further includes an insulating trench extending in a second direction and in contact with each of the bipolar transistors of the row of bipolar transistors. A conductive layer is coupled to the base, and the conductive layer extends through the insulator walls and extends at least partially into the insulating trench.

Abstract: A device includes a current source, a first transistor connected between a first supply rail and an output terminal, and a second transistor connected between the output terminal and a first terminal of the current source, wherein a second terminal of the current source is connected to a second supply rail. A variable-gain amplifier circuit responds to a potential at the first terminal of the current source by applying a potential to the control terminal of the first transistor. A gain of the amplifier circuit is determined by a potential at the output terminal.

Abstract: An electronic assembly includes a board and a system mounted to the board. The system includes an impedance matching circuit coupled to a contactless component. A detection circuit operates to carrying out a process for detecting on the board of potential faults in the system mounted to the board. The detection circuit includes a circuit incorporated into the contactless component itself and configured to carrying out a first part of the process for detecting. A processing circuit of the detection circuit performs a second part of the process for detecting based on results of the first part.

Abstract: The present disclosure relates to a device including a rectifying bridge including: a branch connected between first and second nodes; another branch including first and second MOS transistors series-connected between the first and second nodes and having their sources coupled together; a resistor connecting the gate of the first transistor to the second node; another resistor connecting the gate of the second transistor and the first node; and for each transistor, a circuit including first and second terminals respectively connected to the drain and to the gate of the transistor, and being configured to electrically couple its first and second terminals when a voltage between the first terminal of the circuit and the first terminal of the other circuit is greater than a threshold of the circuit.

Abstract: A test circuit and a method for testing an integrated circuit are provided. The integrated circuit includes a test circuit. The test circuit includes a conductive track extending over at least a portion of the periphery of the integrated circuit, at least one component and an activation circuit adapted to deviating an input data signal into the conductive track during a test mode, and to transmitting the input data signal to the at least one component during a normal operating mode.

Abstract: A shared pair of input/output cells configured to be able to be connected to a first external resonator or a second external resonator. A first oscillator and a second oscillator are coupled to the shared pair input/output cells by a switching circuit. The switching circuit is configured to be able to connect either the first oscillator or the second oscillator to the pair of input/output cells.

Abstract: Control over the operation of an electrically-controlled motor is supported by an interface circuit between the electrically-controlled motor and a near-field radio frequency communication controller. The interface circuit includes a first circuit that receives at least one control set point through a near-field radio frequency communication issued by the near-field radio frequency communication controller. A second circuit of the interface generates one or more electric signals in pulse width modulation based on the control set point.

Abstract: A semiconductor substrate has a back face and a front face and includes a semiconductor well that is electrically isolated from the semiconductor substrate. A device is configured to detect a thinning of the semiconductor substrate from the back face. The device includes at least one trench that extends within the semiconductor well between two peripheral locations from the front face down to a location situated at a distance from a bottom of the semiconductor well. The trench is electrically isolated from the semiconductor well. A detection circuit is configured to measure a physical quantity representative of well electrical resistance between two contact areas respectively situated on either side of the at least one first trench.

Abstract: A first communication interface is a contactless communication interface for an integrated circuit. A second communication interface is coupled to a processing unit external to the integrated circuit. The transfer of data between the first communication interface and the second communication interface is made in a transfer mode using a volatile memory circuit. The volatile memory circuit is accessible simultaneously or virtually simultaneously firstly to processing circuit coupled to said first communication interface and secondly to said processing unit via said second communication interface.

Abstract: A method includes detecting, by a first near-field communication device, the presence of a second near-field communication device. In a case where the second device is intended to be charged in near-field by the first device, the method further includes adjusting, by a control device, an impedance of an impedance matching circuit forming part of a near-field communication circuit of the first device.

Abstract: The present disclosure relates to a method for aligning a smartphone providing NFC wireless power for charging a battery of a device, the method comprising: emitting, with a first NFC antenna of the smartphone, an NFC field for wirelessly charging the battery of the device comprising a second NFC antenna; obtaining, with the smartphone, a measured value of a signal representative of the NFC field strength between the smartphone and the device; determining, by the smartphone, a range of values of a plurality of ranges of values the measured value belongs; and emitting, by the smartphone, at least one notification signal to a user with a frequency determined by the determined range of values.

Abstract: A cryptographic circuit performs a substitution operation of a cryptographic algorithm. For each substitution operation of the cryptographic algorithm, a series of substitution operations are performed by the cryptographic circuit. One of the substitution operations of the series is a real substitution operation corresponding to the substitution operation of the cryptographic algorithm. One or more other substitution operations of the series are dummy substitution operations. A position of the real substitution operation in said series is selected randomly.

Abstract: A processor interacts with a memory set including a cache memory, a first memory storing at least a first piece of information in a first information group, and a second memory storing at least a second piece of information in a second information group. In response to a first cache miss and following a first request from the processor for the first piece of information, the first piece of information obtained from the first memory is supplied to the processor. After a second request from the processor for the second piece of information, the second piece of information obtained from the second memory is supplied to the processor, even if the first information group is currently being transferred from the first memory for loading into the cache memory.

Abstract: A microcircuit card is provided with a fingerprint sensor. Customization of the microcircuit card is accomplished by the use of an exchange of data by near-field communications between the microcircuit card and a near-field communication device. A mechanical positioning system associated with the near-field communication device is configured to retain the microcircuit card such that the fingerprint sensor is accessible and near-field communication between the microcircuit card and the near-field communication device is assured. The mechanical positioning system may, in an example where the near-field communication device is a cell phone, be formed by a slot of a protective case for the cell phone.