Abstract: A semiconductor substrate of an integrated circuit is protected by a coating. The semiconductor includes a front face and a rear face. To detect a breach of the integrity of a semiconductor substrate of an integrated circuit from the rear face, an opening of the coating facing the rear face of the substrate is detected. In response thereto, an alarm is generated. The detection is performed by making resistance measurements with respect to the semiconductor substrate and comparing the measured resistance to a nominal resistive value of the semiconductor substrate.

Abstract: A semiconductor substrate has a front face with a first dielectric region. A capacitive element includes, on a surface of the first dielectric region at the front face, a stack of layers which include a first conductive region, a second conductive region and a third conductive region. The second conductive region is electrically insulated from the first conductive region by a second dielectric region. The second conductive region is further electrically insulated from the third conductive region by a third dielectric region. The first and third conductive regions form one plate of the capacitive element, and the second conductive region forms another plate of the capacitive element.

Abstract: A device, including a main element (ME) and a set of at least two auxiliary elements (SEi), said main element including a master SWP interface (MINT), each auxiliary element including a slave SWP interface (SLINTi) connected to said master SWP interface of said NFC element through a controllably switchable SWP link (LK) and management means (PRMprocessor, CTLM, AMGi) configured to control said SWP link switching for selectively activating at once only one slave SWP interface on said SWP link.

Abstract: A MOS transistor is produced on and in an active zone and included a source region and a drain region. The active zone has a width measured transversely to a source-drain direction. A conductive gate region of the MOS transistor includes a central zone and, at a foot of the central zone, at least one stair that extends beyond the central zone along at least an entirety of the width of the active zone.

Abstract: A memory stores a program to be executed by a microprocessor. The program includes a first program part and a second program part. An authenticator is configured to authenticate the program and includes a module that is external to the microprocessor and configured to authenticate said first program part when the microprocessor is inactive. The authenticator further activates the microprocessor to execute the first program part and authenticate said second program part using instructions of the first program part if the module has authenticated the first program part. The microprocessor then executes the second program part if the microprocessor has authenticated said second program part.

Abstract: A device includes image generation circuitry and convolutional-neural-network circuitry. The image generation circuitry, in operation, generates a digital image representation of a wafer defect map (WDM). The convolutional-neural-network circuitry, in operation, generates a defect classification associated with the WDM based on: the digital image representation of the WDM and a data-driven model associating WDM images with classes of a defined set of classes of wafer defects and generated using a training data set augmented based on defect pattern orientation types associated with training images.

Abstract: Integrated circuit, method for resetting and computer program product. The integrated circuit comprises a first portion and a second portion. The first portion comprises a reset input configured to receive a reset signal, an activation module connected to the reset input. The activation module is configured to activate the second portion upon reception of the reset signal. The first portion comprises an emissions module configured to emit a replicated reset signal. The second portion can be selectively activated or deactivated. The second portion comprises a reset input configured to receive the replicated reset signal of the emissions module, a determination module configured to determine that an elapsed time starting from the activation of the second portion of the circuit oversteps a threshold.

Abstract: An electronic chip disclosed herein includes a plurality of IP core circuits, with a shared strip that is at least partially conductive and is linked to a node for applying a fixed potential. A plurality of tracks electrically links the plurality of IP core circuits to the shared strip. Each individual track of the plurality of tracks solely links a single one of said IP core circuits to the shared strip.

Abstract: In accordance with an embodiment, a device configured to detect a presence of at least one digital pattern within a signal includes J memory circuits having respectively Nj memory locations; and processing circuitry comprising an accumulator configured to successively address the memory locations of the J memory circuits in a circular manner at frequency F and during an acquisition time, and successively accumulate and store values indicative of a signal intensity in parallel in the J addressed memory locations of the J memory circuits, and a detector configured to detect the possible presence of the at least one pattern.

Abstract: The disclosure concerns a method of protecting a calculation on a first number and a second number, including the steps of: generating a third number including at least the bits of the second number, the number of bits of the third number being an integer multiple of a fourth number; dividing the third number into blocks each having the size of the fourth number; successively, for each block of the third number: performing a first operation with a first operator on the contents of a first register and of a second register, and then on the obtained intermediate result and the first number, and placing the result in a third register; and for each bit of the current block, performing a second operation by submitting the content of the third register to a second operator with a function of the rank of the current bit of the third number, and then to the first operator with the content of the first or of the second register according to state “0” or “1” of said bit, and placing the result in the first or second re

Abstract: The disclosure concerns implementing, by a cryptographic circuit, a set of substitution operations of a cryptographic process involving a plurality of substitution tables. For each set of substitution operations of the cryptographic process, a series of sets of substitution operations are performed. One set of the series is a real set of substitution operations corresponding to the set of substitution operations of the cryptographic process. One or more other sets are dummy sets of substitution operations, each dummy set being based on a different permutation of said substitution tables.

Abstract: A cryptographic circuit performs a substitution operation of a cryptographic algorithm based on a scrambled substitution table. For each set of one or more substitution operations of the cryptographic algorithm, the circuit performs a series of sets of one or more substitution operations of which: one is a real set of one or more substitution operations defined by the cryptographic algorithm, the real set of one or more substitution operations being based on input data modified by a real scrambling key; and one or more others are dummy sets of one or more substitution operations, each dummy set of one or more dummy substitution operations being based on input data modified by a different false scrambling key.

Abstract: The physically unclonable function device (DIS) comprises a set of MOS transistors (TR1i, TR2j) mounted in diodes having a random distribution of respective threshold voltages, and comprising N first transistors and at least one second transistor. At least one output node of the function is capable of delivering a signal, the level of which depends on the comparison between a current obtained using a current circulating in the at least one second transistor and a current obtained using a reference current that is equal or substantially equal to the average of the currents circulating in the N first transistors. A first means (FM1i) is configured to impose on each first transistor a respective fixed gate voltage regardless of the value of the current circulating in the first transistor, and a second means (SM2j) is configured to impose a respective fixed gate voltage on each second transistor regardless of the value of the current circulating in the second transistor.

Abstract: A device includes a first switch, a first irreversibly programmable memory point, and a second irreversibly programmable memory point coupled in parallel with the first irreversibly programmable memory point. The first switch and the parallel combination of the first and second irreversibly programmable memory points are coupled in series between a first node and a second node.

Abstract: A device includes a first transistor connected between a first node and an output terminal and a first current source connected between the first node and a supply rail. A circuit includes a second current source connected between the supply rail and a second node, an operational amplifier having a non-inverting input configured to receive a potential set point, and a second transistor connected between the second node and an inverting input of the operational amplifier. An output of the operational amplifier is connected to a control terminal of the second transistor and further connected to a control terminal of the first transistor.

Abstract: A first power supply rail is provided as a power supply tree configured with couplings to distribute a supply voltage to active elements of the circuit. A second power supply rail is provided as an electrostatic discharge channel and is not configured with distribution tree couplings to active elements of the circuit. A first electrostatic discharge circuit is directly electrically connected between one end of the second power supply rail and a ground rail. A second electrostatic discharge circuit is directly electrically connected between an interconnect node and the ground rail. The interconnect node electrically interconnects another end of the second power supply rail to the first power supply rail at the second electrostatic discharge circuit.

Abstract: A start-up phase of a phase lock loop (PLL) circuit includes supplying, by a phase comparator, of control pulses during which an output signal frequency of an oscillator increases. The increase includes an application of a pre-charge current at the oscillator input. A determination is made of a time variation of the output signal frequency. At least one adjustment is made of the intensity of the pre-charge current depending on the at least one determined time variation so as to approach a reference time variation.

Abstract: A method of manufacturing electronic chips containing low-dispersion components, including the steps of: mapping the average dispersion of said components according to their position in test semiconductor wafers; associating, with each component of each chip, auxiliary correction elements; activating by masking the connection of the correction elements to each component according to the initial mapping.

Abstract: A method for writing to electrically erasable and programmable non-volatile memory and a corresponding integrated circuit are disclosed. In an embodiment a method includes operatively connecting a filter circuit belonging to a communication interface to an oscillator circuit, wherein the communication interface is physically connected to a bus, generating, by the oscillator circuit, an oscillation signal and regulating the oscillation signal by the filter circuit so as to generate a clock signal for timing a write cycle.

Abstract: A capacitive element is located in an active region of the substrate and on a front face of the substrate. The capacitive element includes a first electrode and a second electrode. The first electrode is formed by a first conductive region and the active region. The second electrode is formed by a second conductive region and a monolithic conductive region having one part covering a surface of said front face and at least one part extending into the active region perpendicularly to said front face. The first conductive region is located between and is insulated from the monolithic conductive region and a second conductive region.