Abstract: A near-field communication device operates to transmit data by near-field communications techniques to another device. The near-field communication device includes a memory that stores a message to be transmitted in an ASCII format. The message is retrieved from the memory and transmitted using the near-field communications techniques in an ASCII format.

Abstract: A standard integrated cell includes a semiconductor region with a functional domain for logic circuits including a transistor and an adjacent continuity domain that extends out to an edge of the standard integrated cell. The edge is configured to be adjacent to another continuity domain of another standard integrated cell. The standard integrated cell further includes at capacitive element. This capacitive element may be housed in the continuity domain, for example at or near the edge. Alternatively, the capacitive element may be housed at a location which extends around a substrate region of the transistor.

Abstract: A split-gate memory cell includes a state transistor possessing a control gate and a floating gate and a selection transistor possessing a selection gate. The split-gate memory cell is programmed by applying, during a programming duration, a first voltage to the control gate, a second voltage to a drain of the state transistor and a third voltage to the selection gate of the selection transistor. The third voltage is transitioned during the programming duration between a first value and a second value greater than the first value.

Abstract: A non-volatile memory cell includes a selection transistor having an insulated selection gate embedded in a semiconducting substrate region. A semiconducting source region contacts a lower part of the insulated selection gate. A state transistor includes a floating gate having an insulated part embedded in the substrate region above an upper part of the insulated selection gate, a semiconducting drain region, and a control gate insulated from the floating gate and located partially above the floating gate. The source region, the drain region, the substrate region, and the control gate are individually polarizable.

Abstract: An integrated circuit includes a number of components disposed at a surface of a semiconductor body and an interconnect region connecting the components into a functional circuit. A metallic shield is also produced in the interconnect region. A configurable stage is configurable to operate in a receiving antenna configuration or in a detection configuration during which the integrated circuit is configured to detect a presence of an external electromagnetic radiation representative of an attack by injection of faults.

Abstract: A method can be used for transmission of at least one packet of at least one bit over a serial link capable of taking two different states respectively associated with the two possible logical values of the at least one transmitted bit. Starting from a transmission start time of the at least one bit and up to the expiration of a first portion of a bit time associated with the at least one bit, the link is placed in one of its states depending on the logical value of the at least one bit. Upon the expiration of the first portion of this bit time, a first additional transition is generated over the link so as to place the link in its other state up to the expiration of the bit time.

Abstract: A method of protecting a modular calculation on a first number and a second number, executed by an electronic circuit, including the steps of: combining the second number with a third number to obtain a fourth number; executing the modular calculation on the first and fourth numbers, the result being contained in a first register or memory location; initializing a second register or memory location to the value of the first register or to one; and successively, for each bit at state 1 of the third number: if the corresponding bit of the fourth number is at state 1, multiplying the content of the second register or memory location by the inverse of the first number and placing the result in the first register or memory location, if the corresponding bit of the fourth number is at state 0, multiplying the content of the second register or memory location by the first number and placing the result in the first register or memory location.

Abstract: An integrated circuit includes a semiconductor substrate with an electrically isolated semiconductor well. An upper trench isolation extends from a front face of the semiconductor well to a depth located a distance from the bottom of the well. Two additional isolating zones are electrically insulated from the semiconductor well and extending inside the semiconductor well in a first direction and vertically from the front face to the bottom of the semiconductor well. At least one hemmed resistive region is bounded by the two additional isolating zones, the upper trench isolation and the bottom of the semiconductor well. Electrical contacts are electrically coupled to the hemmed resistive region.

Abstract: A semiconductor region includes an isolating region which delimits a working area of the semiconductor region. A trench is located in the working area and further extends into the isolating region. The trench is filled by an electrically conductive central portion that is insulated from the working area by an isolating enclosure. A cover region is positioned to cover at least a first part of the filled trench, wherein the first part is located in the working area. A dielectric layer is in contact with the filled trench. A metal silicide layer is located at least on the electrically conductive central portion of a second part of the filled trench, wherein the second part is not covered by the cover region.

Abstract: A device includes a first chip having a front side and a back side. A second chip is stacked with the first chip and located on the back side of the first chip. A first loop includes first and second through vias located in the first chip. Each through via has a first end on the front side of the first chip and a second end on the back side of the first chip. The first loop also includes a first track that connects the first ends of the first and second through vias is located in the first chip on the front side thereof and a second track that connects the second ends of the first and second through vias is located in the second chip. A detection circuit can detect an electrical characteristic of the first loop.

Abstract: A laser detection device can be used to protect an integrated circuit. The device includes a detection cell having a buried channel of a first conductivity type extending in a substrate of the integrated circuit. The substrate is of a second conductivity type. The detection cell also has a first electrical connection coupling a first point in the buried channel to a supply voltage rail, and a second electrical connection coupled to a second point in the buried channel. A detection circuit is coupled to the second point in the buried channel via the second electrical connection and adapted to detect a fall in the voltage at the second point.

Abstract: A method of manufacturing first, second, and third transistors of different types inside and on top of first, second, and third semiconductor areas of an integrated circuit, including the steps of: a) depositing a first dielectric layer and a first polysilicon layer on the third areas; b) depositing a second dielectric layer on the second areas; c) depositing an interface layer on the first areas; d) depositing a layer of a material of high permittivity and then a layer of a metallic material on the first and second areas; e) depositing a second polysilicon layer on the first, second, and third areas; f) defining the gates of the transistors in the third areas; and g) defining the gates of the transistors in the first and second areas.

Abstract: A circuit includes a random oscillation number generator (RONG) configured to generate first and second pulse signals at first and second RONG outputs. A first counter is coupled to the first RONG output and generates a first count at a first counter output. A second counter is coupled to the second RONG output and generates a second count at a second counter output. A selection circuit is coupled to the first and second counter outputs and to the first and second RONG outputs. A first pulse shaper is connected between the first RONG output and the first counter, and a second pulse shaper is connected between the second RONG output and the second counter.

Abstract: In some embodiments, a contactless communication device includes an antenna, and a driving stage having a power supply terminal configured to receive a power supply voltage, where the driving stage is configured to deliver a current to the antenna. The device further includes a monitoring circuit configured to monitor the power transmitted by the antenna. The monitoring circuit is configured, in the presence of a request for a reduction in a current level of transmitted power, to reduce the power supply voltage of the driving stage down to a target value corresponding to a new level of the transmitted power less than the current level.

Abstract: A oxide-based direct-access resistive nonvolatile memory may include within the interconnect portion of the integrated circuit a memory plane including capacitive memory cells extending in orthogonal first and second directions and each including a first electrode, a dielectric region and a second electrode. The memory plane may include conductive pads of square or rectangular shape forming the first electrodes. The stack of the dielectric layer and the second conductive layer covers the pads in the first direction and forms, in the second direction, conductive bands extending over and between the pads. The second electrodes may be formed by zones of the second bands facing the pads.

Abstract: An EEPROM memory cell includes a dual-gate MOS transistor in which the two gates are separated by an insulation layer. The insulation layer includes a first portion and a second portion having lower insulation properties than the first one. The second portion is located at least partially above a channel region of the transistor.

Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.

Abstract: A stack including a dual-passivation is etched locally so as to reveal contact pads of an integrated circuit which are situated above a last metallization level of an interconnection part of the integrated circuit. This stack serves to protect the integrated circuit against a breakdown of at least one dielectric region, at least in part porous, separating two electrically conducting elements of the interconnection part of the integrated circuit. Such a breakdown may occur due to electrical conduction assisted by the presence of defects within the at least one dielectric region.

Abstract: An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

Abstract: A method and device for real-time generation of a multiresolution representation of a digital image for real-time generation are disclosed. A sequence of main representations of the digital image is stored at successive different main resolutions in a main memory. A part of a current main representation is loaded from the main memory into a local memory via a bus. A current main representation is processed by determining a corresponding part of an intermediate representation of the image having an intermediate resolution lying between the resolution of the current main representation and the resolution of the subsequent main representation. The loading and processing steps are repeated for other parts of the current main representation until all parts of the current main representation have been successively loaded and processed.