Abstract: A method is provided for managing the operation of a circuit operating in a slave mode. The circuit is connected to a bus having at least two of wires and a priority logic level. The slave circuit imposes the priority logic level on a first wire of the bus. While imposing, the slave circuit detects a possible conflict on the first wire resulting from a forcing, external to the slave circuit, of the first wire to another logic level. Upon detecting a conflict, the slave circuit is placed in a state stopping the sending by the circuit of any data over the bus while leaving the circuit listening to the bus.

Abstract: An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected in series so as to form a chain of regions having, alternatingly, one and the other of the two types of conductivity.

Abstract: The present disclosure relates to a non-volatile memory cell on a semiconductor substrate, comprising a first transistor comprising a control gate, a floating gate and a drain region, a second transistor comprising a control gate, a floating gate and a drain region, in which the floating gates of the first and second transistors are electrically coupled, and the second transistor comprises a conducting region electrically coupled to its drain region and extending opposite its floating gate through a tunnel dielectric layer.

Abstract: A method of read or write access by an electronic component of data, including generating a first secret key for a first data of an ordered list of data to access, and for each data of the list, following the first data, generating a distinct secret key by means of a deterministic function applied to a secret key generated for a previous data of the list, and the application of a cryptographic operation to each data to be read or to be written of the list, carried out by using the secret key generated for the data.

Abstract: At least one projecting block is formed in an element. The projecting block is then covered with a first cover layer so as to form a concave ridge self-aligned with the projecting block and having its concavity face towards the projecting block. A first trench is then formed in the ridge in a manner that is self-aligned with both the ridge and the projecting block. The first trench extends to a depth which reaches the projecting block. The projecting block is etched using the ridge and first trench as an etching mask to form a second trench in the projecting block that is self-aligned with the first trench. A pattern is thus produced by the second trench and unetched parts of the projecting block which delimit the second trench.

Abstract: A method can be used for checking the operation of a device of electrically erasable programmable read-only memory type powered by a power supply voltage and associated with a power on reset circuit. The method includes implementation of at least one pilot operation corresponding to a phase of operation of the device that is identified as a phase that is inclined to malfunction in the event of a drop in the power supply voltage below a given value, execution of the at least one pilot operation during the operation of the memory device, and analysis of the result of the pilot operation so as to detect any malfunction not prevented by the reset circuit.

Abstract: A non-volatile memory includes bit lines, a first page-erasable sector including memory cells of a first type, and a second word-erasable or bit-erasable sector including memory cells of a second type. The memory cells of the first type comprise a single floating-gate transistor and the memory cells of the second type comprise a first floating-gate transistor and a second floating-gate transistor the floating gates of which are electrically coupled, the second floating-gate transistor of a memory cell of the second type enabling the memory cell to be individually erased.

Abstract: A method is provided for controlling a sample and hold circuit that includes a switching module coupled to a storage capacitor. A circuit external to the sample and hold circuit of generates at least one main current representative of at least one leakage current of the switching module in its off state. The at least one main current is delivered to at least one auxiliary capacitor. An initial pulse signal is generated from the charging and discharging of the at least one auxiliary capacitor. The sampling phase of the sample and hold circuit is triggered at the rate of the pulses of a pulse signal derived from the initial pulse signal.

Abstract: A memory cell formed in a semiconductor substrate, includes a selection gate extending vertically in a trench made in the substrate, and isolated from the substrate by a first layer of gate oxide, a horizontal floating gate extending above the substrate and isolated from the substrate by a second layer of gate oxide, and a horizontal control gate extending above the floating gate. The selection gate covers a lateral face of the floating gate. The floating gate is separated from the selection gate only by the first layer of gate oxide, and separated from a vertical channel region, extending in the substrate along the selection gate, only by the second layer of gate oxide.

Abstract: A sense amplifier includes: two detection inputs, a latch circuit including two sections coupled to each other and each supplying a data signal. Each section is respectively powered by a P-channel control transistor, having a gate terminal receiving a control signal linked to a respective detection input of the two detection inputs. The sense amplifier includes a control circuit configured to reduce each of the control signals to a sufficiently low voltage to put the corresponding control transistor to the on state, when the control signal reaches a reference voltage. The latch circuit is activated to supply one of the data signals when a corresponding one of the control transistors is in the on state.

Abstract: A device for monitoring the temperature surrounding a circuit, including: a charge storage element; a charge evacuation device; and a thermo-mechanical switch connecting the storage element to the evacuation element, the switch being capable of closing without the circuit being electrically powered, when the temperature exceeds a threshold.

Abstract: An operation for writing at least one datum in at least one memory cell of the electrically erasable and programmable read-only memory type comprises at least one step of erasing or of programming of the cell by a corresponding erasing or programming pulse. The correct or incorrect conducting of the writing operation is checked by an analysis of the form of the erasing or programming pulse during the corresponding erasing or programming step. The result of this analysis is representative of the writing operation being conducted correctly or incorrectly.

Abstract: According to an embodiment, generating an adjustable bandgap reference voltage includes generating a current proportional to absolute temperature (PTAT). Generating the PTAT current includes equalizing voltages across the terminals of a core that is designed to be traversed by the PTAT current. Generating the adjustable bandgap reference also includes generating a current inversely proportional to absolute temperature (CTAT), summing the PTAT and the CTAT currents and generating the bandgap reference voltage based on the sum of the currents. Equalizing includes connecting-across the terminals of the core a first fed-back amplifier with at least one first stage arranged as a folded setup and including first PMOS transistors arranged according to a common-gate setup. Equalizing also includes biasing the first stage based on the CTAT current. The summation of the PTAT and CTAT currents is performed in the feedback stage of the first amplifier.

Abstract: The present disclosure relates to a method for controlling two twin memory cells each comprising a floating-gate transistor comprising a state control gate, in series with a select transistor comprising a select control gate common to the two memory cells, the drains of the floating-gate transistors being connected to a same bit line, the method comprising steps of programming the first memory cell by hot-electron injection, by applying a positive voltage to the bit line and a positive voltage to the state control gate of the first memory cell, and simultaneously, of applying to the state control gate of the second memory cell a positive voltage capable of causing a programming current to pass through the second memory cell, without switching it to a programmed state.

Abstract: An integrated structure includes a first MOS transistor with a first controllable gate region overlying a first gate dielectric and a second MOS transistor neighboring the first MOS transistor and having a second controllable gate region overlying the first gate dielectric. A common conductive region overlies the first and second gate regions and is separated therefrom by a second gate dielectric. The common conductive region includes a continuous element located over a portion of the first and second gate regions and a branch extending downward from the continuous element toward the substrate as far as the first gate dielectric. The branch located between the first and second gate regions.

Abstract: An anticollision method for an NFC device wherein, in reader mode, a variation of a piece of information representative of the amplitude of the signal in an antenna of the device is monitored, and if this piece of information exceeds a threshold, the device is switched to the card mode.

Abstract: The present disclosure relates to a memory on semiconductor substrate, comprising: at least one data line, at least one selection line, at least one reference line, at least one memory cell comprising a select transistor having a control gate connected to the selection line, a first conduction terminal connected to a variable impedance element, the select transistor and the variable impedance element coupling the reference line to the data line, the select transistor comprising an embedded vertical gate produced in a trench formed in the substrate, and a channel region opposite a first face of the trench, between a first deep doped region and a second doped region on the surface of the substrate coupled to the variable impedance element.

Abstract: A first component (CMP1) is connected to the antenna (ANT) and to an impedance matching circuit (CAI) configurable on command and connected to the antenna, and in the absence of another component (CMP2) connected to the antenna, the impedance matching circuit is placed in a first configuration in which it forms with the first component and the antenna a resonant circuit having a first resonant frequency compatible with a carrier frequency. In the presence of a second component (CMP2) connected to the antenna, the impedance matching circuit is placed in a second configuration in which it forms with the first component, the second component and the antenna a resonant circuit having a second resonant frequency compatible with the carrier frequency.

Abstract: A method for assisting with positioning of an electromagnetic transponder by a user with respect to a terminal, wherein: a current value of a ratio of the current coupling factor between the transponder and the terminal to an optimum coupling factor with a first resistive load value is calculated and stored; the current value is compared with a previous value of this ratio, stored in a previous iteration; and data elements intended for the user are controlled according to the comparison.

Abstract: The present disclosure relates to a memory cell comprising a vertical selection gate extending in a trench made in a substrate, a floating gate extending above the substrate, and a horizontal control gate extending above the floating gate, wherein the floating gate also extends above a portion of the vertical selection gate over a non-zero overlap distance. Application mainly to the production of a split gate memory cell programmable by hot-electron injection.