Abstract: The disclosure relates to an integrated circuit comprising a transistor comprising first and second conduction terminals and a control terminal. The integrated circuit further comprises a stack of a first dielectric layer, a conductive layer, and a second dielectric layer, the first conduction terminal comprising a first semiconductor region formed in the first dielectric layer, the control terminal comprising a second semiconductor region formed in the conductive layer, and the second conduction terminal comprising a third semiconductor region formed in the second dielectric layer.

Abstract: A method for protecting a volatile memory against a virus, wherein: rights of writing, reading, or execution are assigned to certain areas of the memory; and a first list of opcodes authorized or forbidden as a content of the areas is associated with each of these areas.

Abstract: A device includes one or more registers and circuitry. The circuitry subjects a key having a number of bits to a first function which takes a selection value into account, generating a result having a number of bits which is twice the number of bits of the key, and stores the result in the one or more registers. In response to a call for the key, the circuitry subjects the result stored in the one or more registers to a second function which takes the selection value into account to generate a response having a same value as the key.

Abstract: The device is equipped with several protocol decoding means (DCDi) corresponding respectively to various communication protocols so as to be capable of dialoguing with the said communication apparatus during transactions selectively according to one of these communication protocols; the method comprises an automatic protocol detection comprising a) an activation (40) of all the decoding means at the start of a transaction, b) a delivery of the signal received by the electronic device to all the decoding means, c) an analysis (41) of at least one signal delivered by at least one of the decoding means and d) a selection (42) of one of the decoding means on the basis of the result of the said analysis, and a conducting of the said transaction with the selected decoding means.

Abstract: The present disclosure relates to a method of making a memory on semiconductor substrate, comprising: at least one data line, at least one selection line, at least one reference line, at least one memory cell comprising a select transistor having a control gate connected to the selection line, a first conduction terminal connected to a variable impedance element, the select transistor and the variable impedance element coupling the reference line to the data line, the select transistor comprising an embedded vertical gate produced in a trench formed in the substrate, and a channel region opposite a first face of the trench, between a first deep doped region and a second doped region on the surface of the substrate coupled to the variable impedance element.

Abstract: An integrated MOS transistor is formed in a substrate. The transistor includes a gate region buried in a trench of the substrate. The gate region is surrounded by a dielectric region covering internal walls of the trench. A source region and drain region are situated in the substrate on opposite sides of the trench. The dielectric region includes an upper dielectric zone situated at least partially between an upper part of the gate region and the source and drain regions. The dielectric region further includes a lower dielectric zone that is less thick than the upper dielectric zone and is situated between a lower part of the gate region and the substrate.

Abstract: Various embodiments provide a memory cell that includes a vertical selection gate, a floating gate extending above the substrate, wherein the floating gate also extends above a portion of the vertical selection gate, over a non-zero overlap distance, the memory cell comprising a doped region implanted at the intersection of a vertical channel region extending opposite the selection gate and a horizontal channel region extending opposite the floating gate.

Abstract: The present disclosure relates to a memory including a memory array with at least two rows of memory cells, a first driver coupled to a control line of the first row of memory cells, and a second driver coupled to a control line of the second row of memory cells. The first driver is made in a first well, the second driver is made in a second well electrically insulated from the first well, and the two rows of memory cells are produced in a memory array well electrically insulated from the first and second wells.

Abstract: An electronic device includes at least one processing circuit connected through at least one terminal at a first reference voltage. At least one radio frequency communication circuit is connected at least to receive the reference voltage. At least one first pad is intended to be taken to a second reference voltage of at least one electronic circuit external to the device. At least one first resistive impedance is coupled between the terminal and the first pad.

Abstract: A method for protecting a ciphering algorithm executing looped operations on bits of a first quantity and on a first variable initialized by a second quantity, wherein, for each bit of the first quantity, a random number is added to the state of this bit to update a second variable maintained between two thresholds.

Abstract: The present disclosure relates to a method for measuring a capacitance of a pair of electrodes including charging the pair of electrodes and transferring the charge between the pair of electrodes and a sampling capacitor, and a measuring step representative of the capacitance of the pair of electrodes according to the voltage at the terminals of the sampling capacitor according to the number of cycles executed so that the voltage at the terminals of the sampling capacitor reaches a threshold voltage. According to the present disclosure, the method comprises an initial step of charging the sampling capacitor between a first voltage and a second intermediate voltage in between the first voltage and a third voltage greater than or equal to a ground voltage, the pair of electrodes being charged between the second voltage and the third voltage. The present disclosure applies in particular to the control of a touch pad.

Abstract: A variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer overlying a substrate, a second main capacitor electrode spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode. The movable capacitor electrode can be caused to be in a first position ohmically electrically connected to the fixed main capacitor electrode such that the variable capacitor has a first capacitance value or in a second position spaced from the fixed main capacitor electrode such that the variable capacitor has a second capacitance value.

Abstract: Device, comprising a main element (ME) and a set of at least two auxiliary elements (SEi), said main element including a master SWP interface (MINT), each auxiliary element including a slave SWP interface (SLINTi) connected to said master SWP interface of said NFC element through a controllably switchable SWP link (LK) and management means (PRM, CTLM, AMGi) configured to control said SWP link switching for selectively activating at once only one slave SWP interface on said SWP link.

Abstract: An integrated circuit memory includes memory cells arranged in an array with rows and columns, each column including a first bit line and a second bit line. Each memory cell is formed by: a first select transistor with a first source-drain path; a second select transistor with a second source-drain path; a first floating gate transistor with a third source-drain path; and a second floating gate transistor with a fourth source-drain path. The first, second, third and fourth source-drain paths are coupled in series between the first bit line and the second bit line. The word line for each row of the memory is coupled to the gate terminals of the first and second select transistors. The control gate line for each row in coupled to the gate terminals of the first and second floating gate transistors.

Abstract: A terminal of a near-field communication system, including at least one element for spreading the spectrum of a received signal.

Abstract: A method for managing the power in an electromagnetic transponder in the field of a terminal, including the steps of: evaluating the power consumption of the transponder circuits; and if this power consumption is below a threshold, evaluating the current coupling factor between the transponder and the terminal and, according to the current coupling: causing an increase of the transponder power consumption or causing a detuning of an oscillating circuit of the transponder.

Abstract: A method for protecting communication between an electromagnetic transponder and a terminal, wherein the transmission of a polling request by the terminal is only allowed when the transponder is in mechanical contact or in quasi-mechanical contact with the terminal.

Abstract: The disclosure comprises: linking a first terminal of the capacitance to the mid-point of a first voltage divider bridge, applying a first voltage to a second terminal of the capacitance, maintaining a voltage of a mid-point of the first divider bridge near a reference voltage, and discharging a mid-point of a second divider bridge with a constant current. When a voltage of the mid-point of the second bridge reaches a first voltage threshold, applying a second voltage to the second terminal of the capacitance, and measuring the time for the voltage to reach a second threshold.

Abstract: A first operation of comparison of the first initial operand with the second initial operand uses at least one comparison operator in such a way as to obtain a first final result word. A second operation of comparison of the second initial operand with the first initial operand uses the at least one comparison operator in such a way as to obtain a second final result word. Another operation checks the values of the bits of the two final result words in relation to a part at least of r combinations of reference values taken from possible combinations of values of these two final result words. These reference combinations represent a valid result of comparison of the two operands including an equality, a relationship of inferiority and a relationship of superiority between the two operands.

Abstract: A memory cell for use within a memory array includes a memory circuit and a read circuit. The memory circuit includes a non-volatile memory element (for example, a floating gate transistor) coupled to an RS flip flop. The RS flip flop is configured with a p-channel transistor coupled to receive a first enable signal and an n-channel transistor coupled to receive a second enable signal. The assertion of the enable signals is offset in time to control operations for forcing latch nodes to a specific voltage and enabling latching operation. The read circuit includes latch circuit coupled to outputs of the RS flip flop and operable as a sense amplifier circuit. The memory and read circuits are fabricated within a rectangular circuit area. Many such rectangular circuit area may be positioned adjacent to each other in a row or column of the memory array.