Abstract: A semiconductor substrate includes a buried semiconductor layer and semiconductor wells. A device for detecting a possible thinning of the semiconductor substrate via the rear face thereof is formed on and in the semiconductor wells. The device is a non-inverting buffer including an input terminal and an output terminal, the device being powered between a supply terminal and a reference terminal where the buried semiconductor layer provides the supply terminal. A control circuit delivers an input signal in a first state to the input terminal and outputs a control signal indicating a detection of a thinning of the substrate if a signal generated at the output terminal in response to the input signal is in a second state different from the first state.

Abstract: A device includes a memory, which, in operation, stores one or more look-up tables, and cryptographic circuitry coupled to the memory. The cryptographic circuitry, in operation, multiplies first data masked with a first mask by second data masked with a second mask, and protects the first data and the second data during the multiplying. The multiplying and protecting includes remasking the first data with a third mask, remasking the second data with a fourth mask, executing one or more compensation operations using one or more of the one or more look-up tables, and generating third data masked with a fifth mask. The fifth mask is independent of the first, second, third, and fourth masks. The third data corresponds to the first data multiplied by the second data.

Abstract: An embodiment of the present disclosure relates to a circuit of cyclic activation of an electronic function comprising a hysteresis comparator controlling the charge of a capacitive element powering the function.

Abstract: First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating layer is formed on a top surface of the semiconductor substrate. The second insulating layer is selectively thinned over the second trench. A polysilicon layer is deposited on the second insulating layer and then lithographically patterned to form: a first polysilicon portion over the first well that is electrically connected to the central conductor of the first trench to form a first capacitor plate, a second capacitor plate formed by the first well; and a second polysilicon portion over the second well forming a floating gate electrode of a floating gate transistor of a memory cell having an access transistor whose control gate is formed by the central conductor of the second trench.

Abstract: The present disclosure relates to a method of fault detection in an application, by an electronic circuit, of a first function to a message, including the steps of generating, from the message, a non-zero even number N of different first sets, each including P shares; applying, to the P shares of each first set, one or a plurality of second functions delivering, for each first set, a second set including Q images; and cumulating all the images, starting with at most Q-1 images selected from among the Q images of a same second set.

Abstract: A semiconductor region includes an isolating region which delimits a working area of the semiconductor region. A trench is located in the working area and further extends into the isolating region. The trench is filled by an electrically conductive central portion that is insulated from the working area by an isolating enclosure. A cover region is positioned to cover at least a first part of the filled trench, wherein the first part is located in the working area. A dielectric layer is in contact with the filled trench. A metal silicide layer is located at least on the electrically conductive central portion of a second part of the filled trench, wherein the second part is not covered by the cover region.

Abstract: A device includes a first switch, a first irreversibly programmable memory point, and a second irreversibly programmable memory point coupled in parallel with the first irreversibly programmable memory point. The first switch and the parallel combination of the first and second irreversibly programmable memory points are coupled in series between a first node and a second node.

Abstract: A semiconductor well of a non-volatile memory houses memory cells. The memory cells each have a floating gate and a control gate. Erasing of the memory cells includes biasing the semiconductor well with a first erase voltage having an absolute value greater than a breakdown voltage level of bipolar junctions of a control gate switching circuit of the memory. An absolute value of the first erase voltage is based on a comparison of a value of an indication of wear of the memory cells to a wear threshold value.

Abstract: The integrated circuit includes a logic part including standard cells arranged in parallel rows along a first direction and in an alternation of complementary semiconductor wells. Among the standard cells, at least one capacitive filling structure belongs to two adjacent rows and includes a capacitive interface between a conductive armature and the first well, the extent of the second well in the first direction being interrupted over the length of the capacitive filling structure so that the first well occupies in the second direction the width of the two adjacent rows of the capacitive filling structure. A conductive structure electrically connects the second well on either side of the capacitive filling structure.

Abstract: According to one aspect, a method for determining, for a memory allocation, placements in a memory area of data blocks generated by a neural network, comprises a development of an initial sequence of placements of blocks, each placement being selected from several possible placements, the initial sequence being defined as a candidate sequence, a development of at least one modified sequence of placements from a replacement of a given placement of the initial sequence by a memorized unselected placement, and, if the planned size of the memory area obtained by this modified sequence is less than that of the memory area of the candidate sequence, then this modified sequence becomes the candidate sequence, the placements of the blocks for the allocation being those of the placement sequence defined as a candidate sequence once each modified sequence has been developed.

Abstract: A system includes a control unit configured to be electrically connected to an input of a memory via a communication interface. The control unit includes a first power supply sector configured to be powered when the control unit is in an operating mode and a second power supply sector configured to be powered when the control unit is in the operating mode and in a low consumption mode. In the first power supply sector, the control unit includes a first configuration circuit operating to configure a polarization value of the input of the memory via the communication interface for the operating mode. In the second power supply sector, the control unit includes a second configuration circuit operating to configure a polarization value of the input of the memory via the communication interface for the low consumption mode.

Abstract: An embodiment of the present disclosure relates to a method of detection of a touch contact by a sensor including a first step of comparison of a voltage with a first voltage threshold; and a second step of comparison of the voltage with a second voltage threshold, the second step being implemented if the first voltage threshold has been reached within a duration shorter than a first duration threshold, the second voltage threshold being higher than the first voltage threshold.

Abstract: A capacitive element of an integrated circuit includes first and second electrodes. The first electrode is formed by a first electrically conductive layer located above a semiconductor well doped with a first conductivity type. The second electrode is formed by a second electrically conductive layer located above the first electrically conductive layer of the semiconductor well. The second electrode is further formed by a doped surface region within the semiconductor well that is heavily doped with a second conductivity type opposite the first conductivity type, wherein the doped surface region is located under the first electrically conductive layer. An inter-electrode dielectric area electrically separates the first electrode and the second electrode.

Abstract: The present disclosure relates to a cryptographic method comprising: multiplying a point belonging to a mathematical set with a group structure by a scalar by performing: the division of a scalar into a plurality of groups formed of a same number w of digits, w being greater than or equal to 2; and the execution, by a cryptographic circuit and for each group of digits, of a sequence of operations on point, the sequence of operations being identical for each group of digits, at least one of the operations executed for each of the groups of digits being a dummy operation.

Abstract: System, method, and circuitry for generating content for a programmable computing device based on user-selected configuration information. A settings registry is generated based on the user's selections. The settings registry and the user selected configuration information is utilized to generate the content, such as code, data, parameters, settings, etc. When the content is provided to the programmable computing device, the content initializes, configures, or controls one or more software and hardware aspects of the programmable computing device, such as boot sequence configurations, internal peripheral configurations, states of the programmable computing device, transitions between states of the programmable computing device, etc., and various combinations thereof.

Abstract: In accordance with an embodiment, a device configured to detect a presence of at least one digital pattern within a signal includes J memory circuits having respectively Nj memory locations; and processing circuitry comprising an accumulator configured to successively address the memory locations of the J memory circuits in a circular manner at frequency F and during an acquisition time, and successively accumulate and store values indicative of a signal intensity in parallel in the J addressed memory locations of the J memory circuits, and a detector configured to detect the possible presence of the at least one pattern.

Abstract: A power switch device includes a first terminal intended to be connected to a source of a first supply potential, a second terminal configured to supply a second potential, and a third terminal intended to be connected to a second source of a third supply potential. The device includes a first PMOS transistor having a source connected to the second terminal and a drain connected to the third terminal, a second PMOS transistor having a source connected to the second terminal, and a third PMOS transistor having a source connected to the first terminal and a drain connected to the drain of the second transistor. A control circuit generates gate control signals to control operation of the first, second and third PMOS transistors dependent on the first, second, and third supply potentials.

Abstract: A device includes a first circuit that includes a near-field emission circuit, a second circuit, and a hardware connection linking the first circuit to the second circuit. The hardware connection is dedicated to a priority management between the first circuit and the second circuit. In addition, priority management information can be communicated between a near-field emission circuit and a second circuit. The communicating occurs between a dedicated hardware connection connecting the near-field emission circuit to the second circuit.

Abstract: A circuit for a communication device and a method for switching a communication device are disclosed. In an embodiment, a method includes activating at least one first antenna and at least one second antenna of a near-field communication (NFC) device for switching the NFC device between first field detection phases and second card detection phases.

Abstract: A memory contains a linked list of records representative of a plurality of data transfers via a direct memory access control circuit. Each record is representative of parameters of an associated data transfer of the plurality of data transfers. The parameters of each record include a transfer start condition of the associated data transfer and a transfer end event of the associated data transfer.