Abstract: A few times programmable (FTP) storage element is provided. The FTP storage element includes a set of N elementary memory units and multiple selection circuits. Each of the elementary memory units includes an address bus for connection to a main address bus and a data bus for connection to a main data bus. The selection circuits generate successive selection signals for successively selecting one of the elementary memory units in order to give exclusive access to the one selected elementary memory unit. The selection circuits operate so as to automatically select a next one of the elementary memory units upon detection of a predetermined condition. In preferred embodiments, each of the elementary memory units is programmable.

Abstract: A semiconductor device is provided that includes a semiconductor channel region extending above a semiconductor substrate in a longitudinal direction between a semiconductor source region and a semiconductor drain region, and a gate region extending in the transverse direction, coating the channel region, and insulated from the channel region. The source, channel, and drain regions are formed in a continuous semiconductor layer that is approximately plane and parallel to the upper surface of the substrate. Additionally, the source, drain, and gate regions are coated in an insulating coating so as to provide electrical insulation between the gate region and the source and drain regions, and between the substrate and the source, drain, gate, and channel regions. Also provided is an integrated circuit that includes such a semiconductor device, and a method for manufacturing such a semiconductor device.

Abstract: A method for converting an analog signal into a digital signal with automatic gain control includes inputting an analog signal into an analog-to-digital converter of a delta-sigma type having an output sampling frequency. The automatic gain control is performed in the analog-to-digital converter downstream of a delta-sigma modulator on an intermediate digital signal sampled at an intermediate sampling frequency greater than an output sampling frequency.

Abstract: A method and device for detecting faults in an electronic circuit, such as a multiplexed latch includes n control inputs, p data inputs, and at least one output. The method involves trying to cause the electronic circuit to function to modify the state of the output with respect to a start state, knowing that if the state of the output effectively changes while the control inputs are inhibited, this means that at least one control input is stuck at logic 1.

Abstract: The process for performing operations with a variable arithmetic does not call for any shifting of the data in the different registers that come into play in the operation. The input registers can have empty parts which are completed by appropriate bit sequences to ensure a propagation of a possible outgoing carry over in order to recover that carry over from a result register.

Abstract: A decode unit (20) decodes instructions in a processor. These, instructions include instructions of a first length in a first instruction mode and instructions of a second, shorter length in a second instruction mode. The decode unit has decoding circuitry (50-60) which decode the instructions. A register holds the instruction mode and generates an instruction mode signal. Switching circuitry (MUX6,MUX7) is responsive to the instruction mode signal to output decoded instructions from the decode unit depending on the instruction mode. A detector (70) is provided for detecting a length change instruction of the second, shorter length while in the second instruction mode which indicates that the subsequent instruction is of the first length. The detector also temporarily alters the state of the instruction mode signal to allow the first length instructions to be decoded without changing the instruction mode held in the register.

Abstract: A monolithic photodetector including a photodiode, a precharge MOS transistor, a control MOS transistor, a read MOS transistor, and a transfer MOS transistor, the photodiode and the transfer transistor being formed in a same substrate of a first conductivity type, the photodiode including a first region of the second conductivity type formed under a second region of the first conductivity type more heavily doped than the first region, and above a third region of the first conductivity type more heavily doped than the substrate, the first region being the source of the second conductivity type of the transfer transistor, the second and third regions being connected to the substrate and being at a fixed voltage.

Abstract: A voltage regulator having an output terminal provided for being connected to a load, including an amplifier having its inverting input connected to a reference voltage, and its non-inverting input connected to the output terminal, a charge capacitor arranged between the output terminal and a first supply voltage, first and second voltage-controlled switches each arranged to connect a second supply voltage and the output terminal, and a control means adapted to providing a voltage depending on the output voltage of the amplifier, on the one hand, to the gate of the first switch and, on the other hand, when the current flowing through the first switch reaches a predetermined threshold, to the gate of the second switch.

Abstract: An integrated circuit with a D.C./D.C. internal voltage regulator, including at least two power stages of the regulator, having respective terminals of connection to a supply voltage connected to distinct pads of the integrated circuit, and a single control stage.

Abstract: A method and a memory controller for controlling a DRAM including a memory plane formed with an array of memory cells and at least two cache registers. An access request including a page address, a column address, a write or read order, a possibly data to be written is received. The page address of the current request is compared with the page address of the preceding request and, if they are different, the controller stores the current request page in one non-used of the cache registers, preferably that which has not been used last.

Abstract: A method of fabricating an integrated circuit including a monocrystalline silicon substrate, a layer of polycrystalline silicon on the top surface of the substrate and doped with at least two dopants with different rates of diffusion, in which method annealing is performed at a temperature and for a time such that a first dopant diffuses into a first zone and a second dopant diffuses into a second zone larger than the first zone.

Abstract: An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a preferred embodiment, the substrate is formed from silicon, and the capacitive trench includes an internal doped silicon region partially enveloped by an insulating wall that laterally separates the internal region from the substrate. Also provided is a method for fabricating an integrated circuit including a substrate that incorporates a semiconductor photodiode device having a p-n junction.

Abstract: A CMOS active pixel for image sensors has a photosensitive element, a capacitive feedback element with a capacitance CF, and four transistors, namely a first transistor, two reset transistors and a transistor for the selection of the pixel. These transistors are laid out and controlled in such a way that the first transistor is mounted as an amplifier during the pixel reset phase and as a follower during the read phase.

Abstract: A biasing device includes closed-loop transconductance slaving circuit, able to slave the time average of the base/emitter or gate/source voltage of the amplifier transistor (Q1) to a reference voltage corresponding to a desired quiescent current for the transistor. Moreover, viewed from the base or gate of the amplifier transistor (Q1), the impedance of the base/emitter or gate/source circuit is small at low frequency, and large with respect to the impedance of the radio frequency source within the radio frequency range of the signal. The device can be incorporated in a mobile terminal, such as a cellular mobile phone.

Abstract: A coprocessor (200) is proposed, using a single multiplication circuit (228 and 231) coupled to a computation circuit (240) dedicated to the computation of Y0, with Y0=(X*J0)mod 2k, J0 being defined by the equation ((N*J0)+1)mod 2k=0. The computation of Y0 is done bit by bit, during one half-cycle of a clock signal before the use of each bit. A method is also proposed for the computation of a modular operation using the circuit (240) for the computation of Y0.

Abstract: A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.

Abstract: A device is provided for synchronizing, on a reference clock signal, an exchange of data with a remote member. The device includes a main variable delay line controlled by a first processing unit coupled to a phase comparator in order to generate a delayed clock signal transmitted to the remote member. One input of the main variable delay line receives the reference clock signal.

Abstract: An integrated circuit including logic MOS transistors, EPROM cells, and high-voltage MOS transistors. Each EPROM cell includes a floating gate formed from a first polysilicon level above a tunnel oxide and a control gate formed from a second polysilicon level. Each logic MOS transistor includes a gate formed from a portion of the second polysilicon level above a very thin oxide. Each high-voltage transistor includes a gate corresponding to a portion of the first polysilicon level above a layer of said tunnel oxide, the gate being covered with a portion of the second polysilicon layer, except at locations where a contact is desired to be made with the gate. The uncovered portion of the first polysilicon layer in the high-voltage MOS transistors is coated with a silicon nitride layer.

Abstract: Prior fabricating the transistors, a phase of forming a deep insulative trench in the substrate is followed by a phase of forming a shallow insulative trench in the substrate and extending the deep trench. The phase of forming the deep trench includes coating the inside walls of the deep trench with an initial oxide layer and filling the deep trench with silicon inside an envelope formed from an insulative material. The phase of forming the shallow trench includes coating the inside walls of the shallow trench with an initial oxide layer and filling the shallow trench with an insulative material.

Abstract: A device for identifying a determined repetitive sequence of predetermined signals arriving on a modem. The device includes a delay circuit so that all the words of a sequence are simultaneously present; a combination circuit for providing a combined word; a circuit for calculating the modulus of each combined word and for comparing this modulus with a threshold; a circuit for counting clock pulses corresponding to the rate at which words arrive; a circuit for inhibiting the counting circuit when the modulus of the combined word is lower than the threshold; and a circuit for providing an identification signal when a predetermined number of clock signals is counted.