Abstract: A method for simultaneous playback of audio tracks from digital transceiver devices, which are adapted to define a communication network. The digital devices store audio tracks to be played. One of the digital devices is actuated as a Master device (M) and the remaining N digital devices as Slave devices. The master device generates a pilot signal by selecting a pilot audio track to be played from among stored audio tracks and by adding a synchronization frequency (fS) to the pilot audio track, having an assigned value that falls out of the sound wave frequency range. The Slave devices receive a pilot portion of the pilot signal and extract the synchronization frequency and the received part of the pilot audio track. The slave devices use the pilot to identify a stored track to be played using the synchronization frequency as a sampling frequency.

Abstract: An energy-scavenging interface receives an input signal from a transducer and supplies an output signal to a load. A switch is connected between the transducer and a reference node, and a diode is connected between the transducer and the load. A control circuit closes the switch for a time interval to permit energy storage in the transducer. A scale copy of a peak value of stored electric current is obtained. The switch is opened when the time interval elapses and the stored energy exceeds a threshold. The stored energy is then released to supply the load through the diode. The switch remains open as long as the value of current in the output signal exceeds the value of the scaled copy of the peak value.

Abstract: A wafer-level package for a MEMS integrated device, envisages: a first body integrating a micromechanical structure; a second body having an active region integrating an electronic circuit, coupled to the micromechanical structure; and a third body defining a covering structure for the first body. The second body defines a base portion of the package and has an inner surface coupled to which is the first body, and an outer surface provided on which are electrical contacts towards the electronic circuit; a routing layer has an inner surface set in contact with the outer surface of the second body and an outer surface that carries electrical contact elements towards the external environment. The third body defines a covering portion for covering the package and is directly coupled to the second body for closing a housing space for the first body.

Abstract: A process for manufacturing a semiconductor device, wherein a semiconductor layer is formed on a body of semiconductor material; a first mask is formed on the semiconductor layer; a first conductive region is implanted in the body using the first mask; a second mask is formed laterally and complementarily to the first mask, at least in a projection in a plane parallel to the surface of the body; a second conductive region is implanted in the body using the second mask, in an adjacent and complementary position to the first conductive region; spacers are formed on the sides of the second mask region, to form a third mask aligned to the second mask; and, using the third mask, portions of the semiconductor layer are removed to form a gate region.

Abstract: An energy-scavenging interface includes first and second switches connected in series between an input and reference, and third and fourth switches connected in series between the input and an output. A control circuit closes the first and second switches and opens the third switch for a first time interval to store charge in a storage element. A scaled copy of a peak value of the charging current is obtained. The control circuit then opens the first switch and closes the third and fourth switches to generate an output signal as long as the value in current of the output signal is higher than the value of said scaled copy of the peak value.

Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a dual mode switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.

Abstract: Capacitance sensing circuits and methods are provided. The capacitance sensing circuit includes a capacitance-to-voltage converter configured to receive a signal from a capacitance to be sensed and to provide an output signal representative of the capacitance, an output chopper configured to convert the output signal of the capacitance-to-voltage converter to a sensed voltage representative of the capacitance to be sensed, an analog accumulator configured to accumulate sensed voltages during an accumulation period of NA sensing cycles and to provide an accumulated analog value, an amplifier configured to amplify the accumulated analog value, and an analog-to-digital converter configured to convert the amplified accumulated analog value to a digital value representative of the capacitance to be sensed. The analog accumulator may include a low pass filter having a frequency response to filter wideband noise.

Abstract: In a multi-phase power supply voltage regulator functioning at a nominal switching frequency, one or more phases are kept off for optimizing energy efficiency at relatively low load conditions. Reactivation of stand-by phases in response to a load increase transient is made more efficiently by exploiting information already present in the output voltage control loop. The technique comprises a) deriving from the control loop information on the equivalent nominal switching frequency given by the product of the nominal switching frequency by the number of active phases; b) updating at every beat of a clock signal the instantaneous value of the equivalent switching frequency; c) determining the band of equivalent switching frequency values to which the instantaneous value belongs; d) logically combining the equivalent switching frequency information with a determined band of output current level, for switching on one or more stand-by phases in response to a load increase transient.

Abstract: A control circuit of a voice coil motor is configured to move at least one read/write head of an hard disk into a parking position. The control circuit compares a received supply signal with a reference signal having a minimum value and a maximum value and a frequency. When the value of the supply signal is between the minimum value and the maximum value of the reference signal, the controller causes alternation of a working condition of the voice coil motor, when the value of said supply signal is higher than the value of the reference signal, and of a stop condition of the voice coil motor, when the value of said supply signal is lower than the value of the reference signal, with a frequency equal to the frequency of said reference signal.

Abstract: A semiconductor device that includes a semiconductor body, having a front side and a back side opposite to one another in a first direction of extension; a drift region, which extends in the semiconductor body, faces the front side, and has a first type of conductivity and a first value of doping; a body region, which has a second type of conductivity opposite to the first type of conductivity, extends in the drift region, and faces the front side of the semiconductor body; a first control terminal, which extends on the front side of the semiconductor body, at least partially overlapping, in the first direction of extension, the body region; and a second control terminal, which extends to a first depth in the semiconductor body, inside the body region, and is staggered with respect to the first control terminal.

Abstract: An embodiment of a MOS transistor includes a layer of semiconductor material, drain regions having a first conductivity type alternately formed in the layer with body regions having a second conductivity type, a first insulating layer disposed over the surface of the layer of semiconductor material, at least one gate-precursor region of conductive material disposed over the first insulating layer, a second insulating layer disposed over the first insulating layer and the gate-precursor region, a third insulating layer disposed over the second insulating layer, at least one source opening formed by removing overlapping portions of the second insulating layer, the third insulating layer, the gate-precursor region, and by at least partially removing a corresponding portion of the first insulating layer. The embodiment may also include at least one source-precursor region extending into the layer of semiconductor material from a surface portion below the at least one source opening.

Abstract: An electronic system to discharge a transformer in case of a failure during a charging phase of the transformer. The system includes the transformer having a primary winding with a first terminal connected to a battery voltage and with a second terminal for generating a primary voltage signal, includes a switch serially connected to the primary winding and having a control terminal carrying a control voltage signal for opening or closing the switch and includes an electronic circuit. The electronic circuit further includes a current generator and a voltage clamping.

Abstract: A control device controls a switching circuit of a DC-DC converter. The switching circuit includes a half-bridge with at least first and second switches connected between an input voltage and a reference voltage. The converter comprises a transformer with a primary coupled with the center point of the half-bridge and a secondary coupled with a load. The control device comprises an error detector configured to determine an error signal representing a difference between a first signal representative of the voltage across the load and a first reference signal and a frequency controller configured to increase the switching frequency of the half-bridge when the error signal is kept below a second signal.

Abstract: A diagnostic device includes a photodiode (2) formed by a body (10) of semiconductor material having a first surface (6a), an integrated optical structure (30) on the first surface and having a second surface (34a), and at least one detection region (50) on the second surface. The at least one detection region includes at least one receptor (52) that binds to a corresponding target molecule (MB) that can be mated with a corresponding marker (54), which, when excited by radiation having a first wavelength (?e), emits radiation having a second wavelength (?f) that can be detected by the photodiode. The integrated optical structure includes at least a first layer (34, 62) of a first material having a first refractive index (n1). The first layer has a thickness substantially equal to an integer and odd multiple of one fourth of the first wavelength (?e) divided by the first refractive index.

Abstract: An embodiment of a network of electronic devices is formed on a flexible substrate by a plurality of electronic devices assembled on the flexible substrate. The electronic devices have an embedded antenna for mutual coupling of a wireless type. Each electronic device is formed by a chip or a complex system integrating a transceiver circuit coupled to the embedded antenna and a functional part coupled to the transceiver circuit and including at least one element chosen in the group comprising: a sensor, an actuator, an interface, an electrode, a memory, a control unit, a power-supply unit, a converter, an adapter, a digital circuit, an analog circuit, an RF circuit, a microelectromechanical system, an electrode, a well, a cell, a container for liquids. The flexible support may be a substrate of plastic material that incorporates the electronic devices or a garment having smart buttons that house the electronic devices.

Abstract: In an embodiment, access transactions of at least one module of a system such as a System-on-Chip (SoC) to one of a plurality of target modules, such as memories, are managed by assigning transactions identifiers subjected to a consistency check. If an input identifier to the check has already been issued for the same given target module, to the related identifier/given target module pair the same input identifier is assigned as a consistent output identifier. If, on the contrary, said input identifier to the check has not been already issued or has already been issued for a target module different from the considered one, to the related identifier/given target module pair a new identifier, different from the input identifier, is assigned as a consistent output identifier.

Abstract: A semiconductor structure includes at least a semiconductor body, a delimiting structure delimiting a cup-shaped recess in the body and a conductive region in the recess. The conductive region is made of a low-melting-temperature material, having a melting temperature lower than that of the materials forming the delimiting structure.

Abstract: A method includes providing at least one target bandwidth for bandwidth usage on an interconnect, the target bandwidth being for traffic associated with a traffic initiator. The method also includes measuring a served bandwidth and resetting the measuring of served bandwidth in response to an occurrence of an event.

Abstract: An embodiment of a process for manufacturing a system for electrical testing of a through via extending in a vertical direction through a substrate of semiconductor material envisages integrating an electrical testing circuit in the body to enable detection of at least one electrical parameter of the through via through a microelectronic buried structure defining an electrical path between electrical-connection elements towards the outside and a buried end of the through via; the integration step envisages providing a trench and forming a doped buried region at the bottom of the trench, having a doping opposite to that of the substrate so as to form a semiconductor junction, defining the electrical path when it is forward biased; in particular, the semiconductor junction has a junction area smaller than the area of a surface of the conductive region in a horizontal plane transverse to the vertical direction, in such a way as to have a reduced reverse saturation current.

Abstract: An inertial sensor having a body with an excitation coil and a first sensing coil extending along a first axis. A suspended mass includes a magnetic-field concentrator, in a position corresponding to the excitation coil, and configured for displacing by inertia in a plane along the first axis. A supply and sensing circuit is electrically coupled to the excitation coil and to the first sensing coil, and is configured for generating a time-variable flow of electric current that flows in the excitation coil so as to generate a magnetic field that interacts with the magnetic-field concentrator to induce a voltage/current in the sensing coil. The integrated circuit is configured for measuring a value of the voltage/current induced in the first sensing coil so as to detect a quantity associated to the displacement of the suspended mass along the first axis.