Abstract: An electrical-optical modulator may function at high data rates and may be realized in comparably low cost silicon base technology, typically in BJT, BiCMOS or CMOS technologies. The output signal path may include a high transition frequency BJT and by using an active load constituted by a MOS driven by an inverted version of the modulating signal that drives the BJT, the falling edge of the output signal is sped up.

Abstract: An embodiment of a motor controller includes first and second supply nodes, a motor-coil node, an isolator, a motor driver, and a motor position signal generator. The isolator is coupled between the first and second supply nodes, and the motor driver is coupled to the second supply node and to the motor-coil node. The motor position signal generator is coupled to the isolator and is operable to generate, in response to the isolator, a motor-position signal that is related to a position of a motor having at least one coil coupled to the motor-coil node. By generating the motor-position signal in response to the isolator, the motor controller or another circuit may determine the at-rest or low-speed position of a motor without using an external coil-current-sense circuit.

Abstract: An embodiment of a method for computing pyramids of input images (I) in a transformed domain, e.g., for search and retrieval purposes, includes:—arranging input images in blocks to produce input image blocks,—subjecting the input image blocks to block processing including: transform into a transformed domain, subjecting the image blocks transformed into a transformed domain to filtering, subjecting the image blocks transformed into a transformed domain and filtered to inverse transform implementing an inverse transform with respect to the previous transform into a transformed domain, thus producing a set of processed blocks. The set of processed blocks, which is recomposeable to an image pyramid, may be used, e.g., in detecting extrema points in images in the pyramid, extracting a patch of given size around the extrema points detected, and processing the patch to obtain local descriptors such as SIFT descriptors of a feature.

Abstract: A proximity sensor may include an array of Geiger mode avalanche photodiodes, each including an anode contact and a cathode contact. A common cathode contact may be coupled to the cathode contacts of the array to define a first connection lead at a back side of the array. A common anode collecting grid contact may be coupled to the anode contacts of the array to define a second connection lead of the array. Circuitry may be coupled with the first and second connection leads and configured to sense at least one of a dark current and a rate of current spikes generated in dark conditions, and generate an output signal representing, an estimated distance of an object from the array upon the sensing.

Abstract: A control apparatus of an engine ignition spark plug includes a switch having a control terminal and an output terminal connected to an external transformer. The switch assumes a closed state for supplying energy to the transformer, and an open state for the transformer to supply energy to the spark plug. A measuring module measures a time duration where, in the open state, a voltage at the output terminal of the switch decreases from a first value to a second value. A detecting module detects an operating condition of the spark plug based on comparing the measured time duration to a time threshold, and to generate a detecting signal based on the comparing.

Abstract: An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first side walls and a first bottom; and further etching said semiconductor substrate to make a second trench inside the first trench, realized in a self-aligned way and below this first trench, the first trench and the second trench defining the trench-gate structure with a bird beak-like transition profile suitable for containing a gate region.

Abstract: A photovoltaic cell may include a hydrogenated amorphous silicon layer including a n-type doped region and a p-type doped region. The n-type doped region may be separated from the p-type doped region by an intrinsic region. The photovoltaic cell may include a front transparent electrode connected to the n-type doped region, and a rear electrode connected to the p-type doped region. The efficiency may be optimized for indoor lighting values by tuning the value of the H2/SiH4 ratio of the hydrogenated amorphous silicon layer.

Abstract: A system includes a processor and a plurality of circuits connected through an interconnection network, wherein associated to each circuit is a respective communication interface configured for exchanging data between the respective circuit and the interconnection network. In particular, a debug unit is associated with each communication interface. Each debug unit is configurable as a data-insertion point, wherein the debug unit transmits data by means of the respective communication interface to the interconnection network, or each debug unit is configurable as a data-reception point, wherein the debug unit receives data by means of the respective communication interface from the interconnection network.

Abstract: A method for simultaneous playback of audio tracks from digital transceiver devices, which are adapted to define a communication network. The digital devices store audio tracks to be played. One of the digital devices is actuated as a Master device (M) and the remaining N digital devices as Slave devices. The master device generates a pilot signal by selecting a pilot audio track to be played from among stored audio tracks and by adding a synchronization frequency (fS) to the pilot audio track, having an assigned value that falls out of the sound wave frequency range. The Slave devices receive a pilot portion of the pilot signal and extract the synchronization frequency and the received part of the pilot audio track. The slave devices use the pilot to identify a stored track to be played using the synchronization frequency as a sampling frequency.

Abstract: An integrated detection structure has a first inertial mass and a second inertial mass, each of which is elastically anchored to a substrate and has a linear movement along a first horizontal axis, a first detection movement of rotation about a first axis of rotation parallel to a second horizontal axis and a second detection movement of translation along the second horizontal axis; driving electrodes cause linear movement of the inertial masses, in opposite directions of the first horizontal axis; a pair of flexural resonator elements and a pair of torsional resonator elements are elastically coupled to the inertial masses, the torsional resonator elements having a resonant movement of rotation about a second axis of rotation and a third axis of rotation, parallel to one another and to the first axis of rotation.

Abstract: A process for manufacturing a semiconductor device, wherein a semiconductor layer is formed on a body of semiconductor material; a first mask is formed on the semiconductor layer; a first conductive region is implanted in the body using the first mask; a second mask is formed laterally and complementarily to the first mask, at least in a projection in a plane parallel to the surface of the body; a second conductive region is implanted in the body using the second mask, in an adjacent and complementary position to the first conductive region; spacers are formed on the sides of the second mask region, to form a third mask aligned to the second mask; and, using the third mask, portions of the semiconductor layer are removed to form a gate region.

Abstract: An energy-scavenging interface receives an input signal from a transducer and supplies an output signal to a load. A switch is connected between the transducer and a reference node, and a diode is connected between the transducer and the load. A control circuit closes the switch for a time interval to permit energy storage in the transducer. A scale copy of a peak value of stored electric current is obtained. The switch is opened when the time interval elapses and the stored energy exceeds a threshold. The stored energy is then released to supply the load through the diode. The switch remains open as long as the value of current in the output signal exceeds the value of the scaled copy of the peak value.

Abstract: A wafer-level package for a MEMS integrated device, envisages: a first body integrating a micromechanical structure; a second body having an active region integrating an electronic circuit, coupled to the micromechanical structure; and a third body defining a covering structure for the first body. The second body defines a base portion of the package and has an inner surface coupled to which is the first body, and an outer surface provided on which are electrical contacts towards the electronic circuit; a routing layer has an inner surface set in contact with the outer surface of the second body and an outer surface that carries electrical contact elements towards the external environment. The third body defines a covering portion for covering the package and is directly coupled to the second body for closing a housing space for the first body.

Abstract: An energy-scavenging interface includes first and second switches connected in series between an input and reference, and third and fourth switches connected in series between the input and an output. A control circuit closes the first and second switches and opens the third switch for a first time interval to store charge in a storage element. A scaled copy of a peak value of the charging current is obtained. The control circuit then opens the first switch and closes the third and fourth switches to generate an output signal as long as the value in current of the output signal is higher than the value of said scaled copy of the peak value.

Abstract: Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a dual mode switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitance-to-voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.

Abstract: Capacitance sensing circuits and methods are provided. The capacitance sensing circuit includes a capacitance-to-voltage converter configured to receive a signal from a capacitance to be sensed and to provide an output signal representative of the capacitance, an output chopper configured to convert the output signal of the capacitance-to-voltage converter to a sensed voltage representative of the capacitance to be sensed, an analog accumulator configured to accumulate sensed voltages during an accumulation period of NA sensing cycles and to provide an accumulated analog value, an amplifier configured to amplify the accumulated analog value, and an analog-to-digital converter configured to convert the amplified accumulated analog value to a digital value representative of the capacitance to be sensed. The analog accumulator may include a low pass filter having a frequency response to filter wideband noise.

Abstract: An embodiment of an integrated electronic device having a body, made at least partially of semiconductor material and having a top surface, a bottom surface, and a side surface, and a first antenna, which is integrated in the body and enables magnetic or electromagnetic coupling of the integrated electronic device with a further antenna. The integrated electronic device moreover has a coupling region made of magnetic material, which provides, in use, a communication channel between the first antenna and the further antenna.

Abstract: A control circuit of a voice coil motor is configured to move at least one read/write head of an hard disk into a parking position. The control circuit compares a received supply signal with a reference signal having a minimum value and a maximum value and a frequency. When the value of the supply signal is between the minimum value and the maximum value of the reference signal, the controller causes alternation of a working condition of the voice coil motor, when the value of said supply signal is higher than the value of the reference signal, and of a stop condition of the voice coil motor, when the value of said supply signal is lower than the value of the reference signal, with a frequency equal to the frequency of said reference signal.

Abstract: In a multi-phase power supply voltage regulator functioning at a nominal switching frequency, one or more phases are kept off for optimizing energy efficiency at relatively low load conditions. Reactivation of stand-by phases in response to a load increase transient is made more efficiently by exploiting information already present in the output voltage control loop. The technique comprises a) deriving from the control loop information on the equivalent nominal switching frequency given by the product of the nominal switching frequency by the number of active phases; b) updating at every beat of a clock signal the instantaneous value of the equivalent switching frequency; c) determining the band of equivalent switching frequency values to which the instantaneous value belongs; d) logically combining the equivalent switching frequency information with a determined band of output current level, for switching on one or more stand-by phases in response to a load increase transient.

Abstract: A semiconductor device that includes a semiconductor body, having a front side and a back side opposite to one another in a first direction of extension; a drift region, which extends in the semiconductor body, faces the front side, and has a first type of conductivity and a first value of doping; a body region, which has a second type of conductivity opposite to the first type of conductivity, extends in the drift region, and faces the front side of the semiconductor body; a first control terminal, which extends on the front side of the semiconductor body, at least partially overlapping, in the first direction of extension, the body region; and a second control terminal, which extends to a first depth in the semiconductor body, inside the body region, and is staggered with respect to the first control terminal.