Abstract: An embodiment concerns the field of real-time location systems (RTLS) based on RSSI (Received Signal Strength Indication) measurements. An embodiment is based on determining the distances between wireless device of a network based on a model that describes the relation of the RSSI value relative to the packet exchanged between nodes as a function of the distance, wherein said model depends on at least one characteristic parameter of the transmission channel and wherein at least said characteristic parameter of the transmission channel is determined periodically and automatically, exploiting the known distances among fixed nodes. In this way, the errors relative to possible time-variability of the transmission channel are reduced and the accuracy and stability of the location measurements are increased.

Abstract: A memory base cell stores a bit of information implemented from a regular and compact structure made up of multiple identical and replicated base elements, on the “sea of gates” Model, in which the base element of the structure is a cell able to be configured with a minimum width in relation to the particular technology used. Such a cell includes a bistable element with an input node operatively connected to a writing data line of the memory base cell, and an output node operatively connected to a reading data line of the memory base cell. The bistable element also has a first inverter and a second inverter arranged in a feedback configuration with respect to one another between the input node and the output node of the bistable element.

Abstract: A multi-pixel photodetector array may include a semiconductor substrate having a back side and a front side, Geiger mode avalanche photodiodes (GM-APDs) on the semiconductor substrate, each including an anode contact, and a common cathode for the GM-APDs and having a first connection lead on the backside of the semiconductor substrate. The multi-pixel photodetector array may include a second connection lead, and a common anode on the front side of the semiconductor substrate and configured to couple in common the anode contacts of the GM-APDs to the second connection lead. Each GM-APD may be configured to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit connected to the common cathode and the common anode.

Abstract: A motion analysis is applied to a signal to identify high-motion regions and low-motion regions. An analysis of low-level characteristics of the signal, such as a skin tone or contrast analysis, is used to generate a map of regions with low-level characteristics. The map is filtered to identify regions having both low-level characteristics and low motion. Based on a comparison of the area of the regions having both low-level characteristics and low motion to a threshold, regions of interest are identified. If the area is greater than the threshold, the regions of interest are identified as a function of the high-motion regions and of the regions that have both low-level characteristics and low motion. Otherwise, the regions of interest are identified as a function of the high-motion regions and of regions identified using face detection.

Abstract: A rooftop tiling system may include multi-functional roof tiles integrating photovoltaic and thermal converters for solar energy. The tiles allow a heat transfer fluid to circulate through inner flow channels of the tiles, and light concentration photovoltaic modules may be present atop the tiles together with a transmission or light reflection focusing device.

Abstract: An SRAM memory device including a plurality of memory cells arranged in a plurality of rows and a plurality of columns; each row of memory cells is adapted to store a RAM word; the RAM word includes a corresponding data word, a corresponding ECC word to be used for error detection and correction purposes and a corresponding applicative word to be used during debugging operations. The SRAM memory device further includes a configurable port adapted to receive a RAM word and to program corresponding memory cells of a selected row based on the received RAM word during a writing access of the SRAM memory device. The SRAM memory device further includes a memory controller unit including circuitry for selectively configuring the configurable port in one among a plurality of modes.

Abstract: A method for identifying a corrupted received signal at a receiver is described. A received signal may include symbols. Each symbol may have a value of a Galois field associated therewith. The receiver may be configured to store a logarithm of normalized probability mass functions and corresponding Galois field values for each of the plurality of symbols. The normalized probability mass functions may be normalized with respect to a greatest probability mass function of a given symbol of the plurality of symbols. The method may include comparing, for each of the plurality of symbols, a logarithm of normalized probability of an n-th best probability value with a respective threshold, counting a number of the logarithms that exceed the respective threshold and generating, for each of the plurality of symbols, a score corresponding to the number.

Abstract: A circuit base cell is for implementing an engineering change order (ECO) obtained on a semiconductor substrate. The base cell may include a PMOS transistor having a first active region obtained in a first diffusion P+ layer implanted in an N-well provided for on the substrate, and an NMOS transistor having a second active region obtained in a second diffusion N+ layer implanted on the substrate in such a manner as to be electrically insulated from the first diffusion P+ layer. The cell may be characterized in that the active regions and the diffusion layers are aligned therebetween with respect to a reference axis and they are extended symmetrically in the direction orthogonal to the axis. A first and a second width may be associated with the active regions and to the diffusion layers, respectively. The first and second width may be greater than a width of the cell, which is equivalent to a pitch of the standard minimum cell.

Abstract: A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly.

Abstract: According to a process for manufacturing an integrated power device, projections and depressions are formed in a semiconductor body that extend in a first direction and are arranged alternated in succession in a second direction, transversely to the first direction. Further provided are a first conduction region and a second conduction region. The first conduction region and the second conduction region define a current flow direction parallel to the first direction, along the projections and the depressions. To form the projections and the depressions, portions of the semiconductor body that extend in the first direction and correspond to the depressions, are selectively oxidized.

Abstract: An electrically programmable non-volatile memory device includes a plurality of memory cells, a plurality of lines for selectively biasing the memory cells, reconnection circuitry for reconnecting a pair of selected lines having different voltages, and a controller for controlling the memory device. The reconnection means includes a discharge circuit for discharging one of the selected lines being at the higher voltage in absolute value, an equalization circuit for equalizing the selected lines, a comparator circuit for measuring an indication of a voltage difference between the selected lines, and an evaluation circuit responsive to an enabling signal from the controller for activating the discharge circuit until an absolute value of the voltage difference exceeds a threshold value and for disabling the discharge circuit and enabling the equalization circuit when the absolute value of the voltage difference reaches the threshold value.

Abstract: A microfluidic diagnostic device (1, 50) comprising a substrate (4); a compatible layer (6) formed on a first face (4a) of the substrate (4); a structural layer (8), formed on top of the compatible layer (6); a channel (10), formed in the structural layer (8) and limited underneath by the compatible layer (6), optically accessible by a first luminous radiation having a first wavelength (?e); and a cover layer (18) made of a material transparent to the first wavelength (?e), arranged on top of the structural layer (8) and sealing the channel (10) at the top, wherein the compatible layer (6) has a thickness equal to approximately a quarter of the first wavelength (?e) divided by the refraction index of the compatible layer (6), or equal to an odd multiple of a quarter of the first wavelength (?e) divided by the refraction index of the compatible layer (6).

Abstract: An electronic device including a die-pad area, a die fixed to the die-pad area, a connection terminal, and a ribbon of conductive material. The ribbon is electrically connected to the die and to the connection terminal, and has a prevalent dimension along a first axis, a width, measured along a second axis, which is transverse to the first axis, and a thickness, which is negligible with respect to the width; the ribbon moreover has a cross section that defines a concave geometrical shape.

Abstract: A control circuit for a protection circuit device includes first and second voltage boosters, a comparator coupled thereto, and a MOSFET for bypassing a direct current (DC) source. The control circuit may include a control logic circuit having a first input coupled to an output of the comparator, a second input receiving a disable command signal, a first output coupled to an enable input of the first voltage booster, and a second output, and a four terminal path inversion switch. The control circuit may include a supply voltage line, a sensor coupled to the second input of the control logic circuit, to generate the disable command signal, and to force the MOSFET into a conduction mode, and an external command terminal coupled to the second input of the control logic circuit, to receive the disable command signal, and to force the MOSFET into the conduction mode.

Abstract: An electrically programmable non-volatile memory device is proposed. The memory device includes a plurality of memory cells and a driver circuit for driving the memory cells; the driver circuit includes programming means for providing a first programming voltage and a second programming voltage to a set of selected memory cells for programming the selected memory cells; the first programming voltage requires a first transient period for reaching a first target value thereof. In the solution according to an embodiment of the present invention, the programming means includes means for maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period being required by the second programming voltage to reach a second target value thereof.

Abstract: Driving a light-emitting element by a driver capable of testing at least an open or short condition of the light-emitting element. In particular, a driving signal is generated to drive the light-emitting element. It is evaluated based on the value of the driving signal whether a predetermined condition is reached. If so, a latch signal is output indicating that the testing has finished.

Abstract: A method is provided for controlling a converter of the multiphase interleaving type. According to the method, there is detected when a change of the load applied to an output terminal of the converter occurs. All the phases of the converter are simultaneously turned off, and a driving interleaving phase shift is recovered so as to restart a normal operation of the converter. A controller for carrying out such a method is also provided.

Abstract: A gyroscope includes a body, a driving mass, which is mobile according to a driving axis, and a sensing mass, which is driven by the driving mass and is mobile according to a sensing axis, in response to rotations of the body. A driving device forms a microelectromechanical control loop with the body and the driving mass and maintains the driving mass in oscillation with a driving frequency. The driving device comprises a frequency detector, which supplies a clock signal at the frequency of oscillation of the driving mass, and a synchronization stage, which applies a calibrated phase shift to the clock signal so as to compensate a phase shift caused by components of the loop that are set between the driving mass and the control node.

Abstract: An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell.

Abstract: A control device for a resonant converter, the control device including a first circuit to integrate at least one signal indicating a half wave of a current circulating in a primary winding of a transformer; the first circuit is structured to generate at least a control signal of the switching circuit depending on the integrated signal. The control device includes a second circuit to impose the equality of a switching-on time period of the first and second switches.