Abstract: A system for driving a MEMS array having a number of MEMS structures, each defining at least one row terminal and one column terminal, envisages: a number of row driving stages, each for supplying row-biasing signals to the row terminal of each MEMS structure associated to a respective row; a number of column driving stages, each for supplying column-biasing signals to the column terminal of each MEMS structure associated to a respective column; and a control unit, for supplying row-address signals to the row driving stages for generation of the row-biasing signals and for supplying column-address signals to the column driving stages for generation of the column-biasing signals. The control unit further supplies row-deactivation and/or column-deactivation signals to one or more of the row and column driving stages, for causing deactivation of one or more rows and/or columns of the MEMS array.

Abstract: A processing circuit for a digital sensor, including: a control stage, which generates a control signal; a multiplexing stage, which may be electrically coupled to a plurality of sensing structures for receiving corresponding detection signals and generates a multiplexed signal, on the basis of one between the detection signals, as a function of the control signal; an analog-to-digital conversion stage, which is connected to the multiplexing stage and generates an encoded signal on the basis of the multiplexed signal; and an equalizer, which multiplies the encoded signal by a coefficient that depends upon the control signal.

Abstract: A building structure includes a block of building material and a magnetic circuit buried in the block of building material. The structure also includes a plurality of sensing devices buried in the block of building material. Each sensing device may include a contactless power supplying circuit magnetically coupled with the magnetic circuit to generate a supply voltage when the magnetic circuit is subject to a variable magnetic field.

Abstract: A testing architecture for integrated circuits on a wafer includes at least one first circuit of a structure TEG realized in a scribe line providing separation between first and second integrated circuits. At least one pad is shared by a second circuit inside at least one of the first and second integrated circuits and the first circuit. Switching circuitry is coupled to the at least one pad and to the first and second circuits.

Abstract: A boost-type converter circuit includes a pair of converter switches that are alternatively switchable on and off. An inductor is coupled to the intermediate point between the converter switches. A driver module controls switching on and off of the converter switches in respond to a comparator output signal. A reference signal line provides to the comparator a reference signal, and an output feedback line provides to the comparator an output feedback signal. These signals are compared to each other to generate the comparator output signal for controlling the driver module. A low-pass filter network is coupled to the inductor and configured to provide a ripple current which is a low-pass filtered replica of the current through the inductor. An injector circuit injects the ripple current into the reference signal line coupled to the comparator.

Abstract: Image-processing apparatus and methods to adaptively vary an interest point threshold value and control a number of interest points identified in an image frame are described. Sub-regions of an image frame may be processed in a sequence, and an interest point threshold value calculated for each sub-region. The calculated value of the interest point threshold may depend upon pre-selected values and values determined from the processing of one or more prior sub-regions. By using adaptive thresholding, a number of interest points detected for each frame in a sequence of image frames may remain substantially constant, even though objects within the frames may vary appreciably.

Abstract: A power electronic device includes first and second electronic switches, each integrated on a package having a low parasitic inductance, a supply terminal and a ground terminal. The first conduction terminal of the first switch may be coupled with the supply terminal, and the second conduction terminal of the second electronic switch may be coupled with the ground terminal. The corresponding control terminals of the switches may be coupled to corresponding pilot drivers. The package may include first and second electric terminals, wherein the second conduction terminal of the first switch is coupled to the first electric terminal, and the first conduction terminal of the second switch is coupled to the second electric terminal. A first inductance may be interposed between the first electric terminal and the output terminal and/or a second inductance interposed between the second electric terminal and the output terminal.

Abstract: A circuit includes a transformer with a primary, secondary, and auxiliary. A first control circuit actuates a first switch circuit based on a wake-up signal to cause the primary to transmit power to the secondary. A second control circuit actuates a second switch circuit based on an output voltage at the secondary being less than a threshold to generate the wake-up signal to the secondary for transmission to the auxiliary. The second switch circuit has a transistor with a source coupled to a reference node, a gate coupled to the second control circuit. A first diode has an anode coupled to the source and a cathode coupled to the drain, and blocks flow of current from the drain to the source. A second diode has an anode coupled to the substrate and a cathode coupled to the drain, and blocks flow of current from the drain to the substrate.

Abstract: A driver device is for switching on and off a transistor for supplying a load by driving a control electrode of the transistor. The driver device includes a first terminal connected to the control electrode of the transistor, a second terminal connected between the transistor and the load, and a current-discharge path coupled to the first terminal. The current-discharge path includes a diode and is activated when the transistor is switched off. The diode becomes non-conductive to interrupt the current-discharge path when the voltage on the second terminal reaches a threshold value.

Abstract: A method is for reducing pulse skipping from a characteristic affecting a modulating signal input to an integrator of a pulse width modulation (PWM) modulator, together with a square wave carrier signal for generating a triangular waveform of the PWM modulator. The method may include creating a broad synchronous peak at vertexes of the triangular waveform output by the integrator.

Abstract: Power and data are transmitted via a transformer including primary side and secondary side. A primary side signal is generated by coupling a first oscillator signal modulated with a data signal with a second oscillator signal that is selectively switched on and off. At the secondary side a secondary signal is generated. A demodulator demodulates the secondary signal to recover the data signal. A rectifier processes the secondary signal to recover a power supply signal controlled by switching on and off the second oscillator.

Abstract: A step-counter device detects and counts user steps. The device includes a transducer configured to generate an electrical transduction signal in response to user stepping. An energy-scavenging system is coupled to the transducer to generate a power supply voltage in response to the electrical transduction signal. A processing unit is powered by the power supply voltage. The processing unit is further configured to sense the electrical transduction signal and determine whether a user step has occurred and in response to that determination increment a step counter.

Abstract: The present disclosure relates to a sensor for detecting hydrogen ions in an aqueous solution comprising a support, a reference electrode, a working electrode and a counter electrode supported by said support, the reference electrode being made of a material comprising silver and silver chloride, the counter electrode being made of a conductive material. The working electrode comprises a substrate and a layer made of an inherently electrically conductive polymer of the polythiophene or polyaniline (PANI) or polypyrrole class.

Abstract: A power transistor generates an output current and a sense transistor generates a proportional sense current. A differential amplifier generates a gate voltage applied to the power and sense transistors in response to first and second input signals. A comparator circuit compares the gate voltage to a switching reference to detect whether the power and sense transistors are operating in a triode mode of operation or in a saturation mode of operation. At least one of the first and second input signals is modified in response to the detection made by the comparator circuit. In one instance, different reference voltages are applied to an input of the amplifier depending on the detected mode of operation. In another instance, different resistances are used to convert the sense current to a voltage for application to an input of the amplifier in response to the detected mode of operation.

Abstract: A non-volatile memory device includes a memory array having memory cells arranged in wordlines and receiving a supply voltage. A row decoder includes an input and pre-decoding module, which is configured to receive address signals and generate pre-decoded address signals at low voltage, in the range of the supply voltage. A driving module is configured to generate biasing signals for biasing the wordlines of the memory array starting from decoded address signals, which are a function of the pre-decoded address signals, at high voltage and in the range of a boosted voltage higher than the supply voltage. A processing module is configured to receive the pre-decoded address signals and to jointly execute an operation of logic combination and an operation of voltage boosting of the pre-decoded address signals for generation of the decoded address signals.

Abstract: The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon. The device is integrated in a chip formed by a substrate and by an insulating layer, the sensitive region and the concentrator being formed in the insulating layer.

Abstract: An embodiment of a device for positioning a miniaturized piece, including: a positioning structure, which forms a first cavity, designed to receive with play the miniaturized piece, and a second cavity communicating with the first cavity; at least one electrical-contact terminal, facing the second cavity and electrically coupleable to an electronic testing device, designed to carry out an electrical test on the miniaturized piece; and an actuator device, which causes a vibration of the positioning structure, the vibration being such that the miniaturized piece translates, in use, towards the second cavity, until it penetrates at least in part into the second cavity.

Abstract: A method is for reducing power dissipation in a switching amplifier. The method may include comparing a load current with a ripple current and, if the load current is greater than the ripple current, then detecting a first potential value at a first output terminal of the switching amplifier, detecting a second potential value at a second output terminal of the switching amplifier, detecting a third potential value between first and the second terminals of a first capacitor, and coupling the first terminal of the first capacitor to one of the first output terminal and the second output terminal. The second terminal of the first capacitor may be coupled to a reference voltage, the first output terminal, or the second output terminal based upon whether the first potential value or the second potential value is equal to the third potential value.

Abstract: An embodiment of a method for manufacturing a semiconductor wafer includes providing a monocrystalline silicon wafer, epitaxially growing a first layer of a first material on the silicon wafer, and epitaxially growing a second layer of a second material on the first layer. For example, said first material may be monocrystalline silicon carbide, and said second material may be monocrystalline silicon.

Abstract: In an embodiment, digital video frames in a flow are subjected to a method of extraction of features including the operations of: extracting from the video frames respective sequences of pairs of keypoints/descriptors limiting to a threshold value the number of pairs extracted for each frame; sending the sequences extracted from an extractor module to a server for processing with a bitrate value variable in time; receiving the aforesaid bitrate value variable in time at the extractor as target bitrate for extraction; and limiting the number of pairs extracted by the extractor to a threshold value variable in time as a function of the target bitrate.