Abstract: A bi-synchronous electronic device may include a FIFO memory circuit, and a first digital circuit coupled to the FIFO memory circuit and configured to operate based upon a first clock signal, and write to the FIFO memory circuit based upon a write pointer. The bi-synchronous electronic device may include second digital circuit coupled to the FIFO memory circuit and configured to operate based upon a second clock signal different from the first clock signal, and read from the FIFO memory circuit based upon a read pointer. The FIFO memory circuit may be configured to detect a jump in the write pointer to a new position, determine jump candidates for the read pointer from a current position, select a jump candidate, and synchronize the read pointer based upon the selected jump candidate.

Abstract: An embodiment of a method for detecting permanent faults of an address decoder of an electronic memory device including a memory block formed by a plurality of memory cells, including the steps of: selecting an address, which identifies a selected set of memory cells; writing at the selected address a code word generated on the basis of an information word, of the selected address, and of an error-correction code; and then detecting an error within a word stored at the selected address. The method moreover includes the steps of: selecting a set of excitation addresses; writing a test word at the selected address, and then writing an excitation word at each excitation address; and next comparing the test word with a new word stored at the selected address.

Abstract: A memory includes a column decoder performing at least two levels of decoding using a first level decoder that decodes between the column bit lines and first level decode lines and a second level decoder that decodes between the first level decode lines and second level decode lines. The second level decoder includes first transistors coupled between the first level decode lines and read output lines and second transistors coupled between the first level decode lines and write input lines. The first transistors have a first voltage rating and are driven by decode control signals referenced to a low supply voltage compatible with the first voltage rating. The second transistors have a second voltage rating, higher than the first voltage rating, and are driven by decode control signals referenced to a high supply voltage (in excess of the low supply voltage) compatible with the second voltage rating.

Abstract: An energy harvesting circuit receives an input voltage from a transducer and uses a single inductor operating in a DC-DC converter charging mode to generate charging current at a first output coupled to an energy storage device where a supply voltage is stored. The energy harvesting circuit further receives the supply voltage from the energy storage device and uses the same single inductor operating in a DC-DC converter regulating mode to generate load current at a second output where a regulated load voltage is provided. The energy harvesting circuit switches between the charging mode and the regulating mode in accordance with a discontinuous mode (DCM) control process.

Abstract: A device includes an epitaxial region extending into a front surface of a chip. A portion of the chip adjacent the epitaxial region defines a collector. A gate is provided in a trench extending into the epitaxial region from the front surface. An emitter includes a body extending into the epitaxial region at a first side of the trench and a source extending into the body region from the front surface at the trench. A dummy emitter extends into the epitaxial region from the front surface at a second side of the trench opposite said first side. The dummy emitter lacks the source. The gate extends along a first wall of the trench facing the emitter region. A dummy gate is formed in the trench in a manner electrically isolated from the gate and extending along a second wall of the trench opposite said first wall.

Abstract: An apparatus includes first and second oscillator circuits. A transformer has a primary winding coupling the first oscillator circuit to the second oscillator circuit and a secondary winding. A first outgoing communications circuit is coupled to the second oscillator circuit and drives an amplitude modulated data signal thereto. A first incoming communications circuit is coupled to the primary winding of the transformer. A second outgoing communications circuit is coupled to the secondary winding drives an amplitude modulated data signal thereto. A second incoming communications circuit is coupled to the secondary winding. The secondary winding is magnetically coupled with the primary winding so the secondary winding receives an output power and an incoming data transmission based upon the amplitude modulated data signal, and so the primary winding receives an incoming high speed data transmission based upon the amplitude modulated data signal.

Abstract: An optoelectronic integrated device includes a body made of semiconductor material, which is delimited by a front surface and includes a substrate having a first type of conductivity, an epitaxial region, which has the first type of conductivity and forms the front surface, and a ring region having a second type of conductivity, which extends into the epitaxial region from the front surface, and delimiting an internal region. The optoelectronic integrated device moreover includes a MOSFET including at least one body region having the second type of conductivity, which contacts the ring region and extends at least in part into the internal region from the front surface. A photodetector includes a photodetector region having the second type of conductivity, and extends into the semiconductor body starting from the front surface, contacting the ring region.

Abstract: A calibration signal is generated from a modulating signal having a first frequency and a carrier signal having a second frequency. A single-sideband mixer modulates the modulating signal on the carrier signal. At least two frequency dividers by two connected in cascade receive the modulating signal modulated on the carrier signal and generate an output of the calibration signal.

Abstract: A mirror micromechanical structure has a mobile mass carrying a mirror element. The mass is drivable in rotation for reflecting an incident light beam with a desired angular range. The mobile mass is suspended above a cavity obtained in a supporting body. The cavity is shaped so that the supporting body does not hinder the reflected light beam within the desired angular range. In particular, the cavity extends as far as a first side edge wall of the supporting body of the mirror micromechanical structure. The cavity is open towards, and in communication with, the outside of the mirror micromechanical structure at the first side edge wall.

Abstract: A method of acquiring a satellite signal includes providing a CDMA-modulated signal, defining a first search frequency interval and a first reception sensitivity, and performing a first acquisition of the modulated signal according to the first sensitivity and the first frequency interval in order to provide an acquisition or failed acquisition result. In case of a failed acquisition, performing a second acquisition of the modulated signal as a function of a second search frequency interval, narrower than the first frequency interval, and a second reception sensitivity, greater than the first sensitivity and depending on a power of a side lobe of the modulated signal.

Abstract: A MOS transistor includes a semiconductor layer with a drain region and a body region. A first insulating layer is disposed over the semiconductor layer, a gate-precursor layer is disposed over the first insulating layer, a second insulating layer disposed over the first insulating layer and a third insulating layer disposed over the second insulating layer. A source opening extends through the third insulating layer, the second insulating layer, the gate-precursor layer, and the first insulating layer. An implant through the source opening forms a source-precursor region in the semiconductor layer. The source opening is then lined and an body contact opening is made through the liner, the source-precursor region and into the body region. An implant through the body contact opening forms the body contact region below the source-precursor. The body contact opening is then filled with a metal.

Abstract: An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core.

Abstract: A method of PWM regulating a motor through a half-bridge drive stage includes sampling the motor current to obtain sampled values during driving intervals or during current decay intervals, and comparing a last sampled value with a current threshold. The motor is coupled in a slow decay electrical path for the duration of a current decay interval if the last sampled value does not exceed the current threshold. Otherwise the motor is coupled in a fast decay electrical path for a portion of the duration of the current decay interval, and is coupled in the slow decay electrical path for a remaining part of the duration of the same current decay interval.

Abstract: An electronic device is attached to a first surface of a board which includes vias. A heat sink precursor for the electronic device is attached to the second surface of the electronic board. The heat sink precursor includes a cavity facing the vias. A wave of solder paste is applied to the second surface. The solder paste penetrates into the cavity of the heat sink precursor and flows by capillary action through the vias to weld a thermal radiator and/or electronic contact of the electronic device to the vias. The solder paste further remains in the cavity to form a corresponding heat sink.

Abstract: An embodiment of a method for producing traceable integrated circuits includes forming on a wafer of semiconductor material functional regions for implementing specific functionalities of corresponding integrated circuits, forming at least one seal ring around each functional region of the corresponding integrated circuit, and forming on each integrated circuit at least one marker indicative of information of the integrated circuit. Forming on each integrated circuit at least one marker may include forming the at least one marker on at least a portion of the respective seal ring that is visible.

Abstract: A boost converter receives an input voltage and provides an output voltage and includes a power switch and a voltage control circuit configured to drive the power switch as a function of the output voltage. A voltage sensing circuit in the form of a voltage divider is coupled to sense the output voltage and provide a feedback voltage. The voltage control circuit drives the power switch. An electronic control switch is configured to selectively connect the voltage divider to sense the output voltage as a function of an enable signal generated by a timer circuit. The enable signal is pulsed such that the voltage divider is periodically connected to sense the output voltage during a first time and is disconnected from sensing during a second time.

Abstract: An integrated circuit chip attachment in a microstructure device is accomplished through the use of an adhesive-based material in which graphene flakes are incorporated. This results in superior thermal conductivity. The spatial orientation of the graphene flakes is controlled, for example by adhering polar molecules to the graphene flakes and exposing the flakes to an external force field, so that the graphene flakes have desired orientations under the integrated circuit chip, alongside of the integrated circuit chip and above the integrated circuit chip.

Abstract: Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract: An electronic device includes at least one chip and an insulating body embedding the chip. The electronic device further includes a heat-sink in contact with the chip. The heat-sink includes a plate having a first thickness. A recess is provided in the plate that defines a central portion of the plate having a second thickness less than the first thickness. The chip is mounted to the central region of the heat-sink within the recess. The insulating body includes a surface, such as a mounting surface, including an opening exposing at least a portion of the heat-sink. The device may further include a reophore extending through a side surface of the insulating body, that reophore being in contact with the heat sink.