Abstract: A system-on-chip includes a processor, a memory and a memory interface coupled to the processor and to the memory. The processor, in operation, generates memory access requests. The memory includes one or more physical banks divided into a succession of sectors, each sector having a size equal to a smallest erasable size of the memory. The memory interface, in operation, responds to receiving memory configuration information by storing logical memory bank configuration information in the one or more configuration registers, the logical memory bank configuration information assigning each sector of the one or more physical banks of the memory to a respective logical memory bank of one or more logical memory banks. The memory interface, in operation, controls access to the memory by the processor based on the logical memory bank configuration information stored in the one or more configuration registers.

Abstract: The present disclosure is directed to a device that provides high impedance contact pads for an electrostatic charge sensor. The contact pads are shared between the electrostatic charge sensor and drivers. The contact pads are set to a high impedance state by reducing current leakage through the drivers. Compared to electrostatic charge sensor with low impedance contact pads, the electrostatic charge sensor disclosed herein has high sensitivity, and is able to detect weak electrostatic fields.

Abstract: An assembly for detecting a structural defect in a semiconductor die is provided. The assembly includes a defect-detection sensor and a microcontroller. The defect-detection sensor includes a plurality of resistive paths of electrical-conductive material in the semiconductor die, each of which has a first end and a second end and extends proximate a perimeter of the semiconductor die. The defect-detection sensor includes a plurality of signal-generation structures, each coupled to a respective resistive path and configured to supply a test signal to the resistive path. The microcontroller is configured to control the signal-generation structures to generate the test signals, acquire the test signals in each resistive paths, test an electrical feature of the resistive paths by performing an analysis of the test signals acquired and detect the presence of the structural defect in the semiconductor die based on a result of the analysis of the test signals acquired.

Abstract: MEMS ultrasonic transducer, MUT, device, comprising a semiconductor body with a first and a second main surface and including: a first chamber extending into the semiconductor body at a distance from the first main surface; a membrane formed by the semiconductor body between the first main surface and the first chamber; a piezoelectric element on the membrane; a second chamber extending into the semiconductor body between the first chamber and the second main surface; a central fluidic passage extending into the semiconductor body from the second main surface to the first chamber and traversing the second chamber; and one or more lateral fluidic passages extending into the semiconductor body from the second main surface to the second chamber. The one or more lateral fluidic passages, the central fluidic passage and the second chamber define a fluidic recirculation path that fluidically connects the first chamber with the outside of the semiconductor body.

Abstract: A “double-deck” semiconductor device includes a first semiconductor chip mounted to a first surface of a leadframe, with a first wire bonding pattern and a first mass of encapsulating material molded onto the first surface of the leadframe when the leadframe is in a first spatial orientation. The leadframe with the first semiconductor chip and the first wire bonding pattern encapsulated and thus protected by the first mass of encapsulating material is then turned over to a second spatial orientation. A second semiconductor chip is attached to the second surface of the leadframe, with a second wire bonding pattern and a second mass of encapsulating material, different from the first mass of encapsulating material molded onto the second surface of the leadframe.

Abstract: A MEMS shutter including: a substrate of semiconductor material traversed by a main aperture, and a first semiconductor layer and a second semiconductor layer, which form a supporting structure fixed to the substrate; a plurality of deformable structures; a plurality of actuators; and a plurality of shielding structures, each of which is formed by a corresponding portion of at least one between the first semiconductor layer and the second semiconductor layer, the shielding structures being arranged angularly around the underlying main aperture so as to provide shielding of the main aperture, each shielding structure being further coupled to the supporting structure via a corresponding deformable structure. Each actuator may be controlled so as to cause a rotation of a corresponding shielding structure between a respective first position and a respective second position, thus varying shielding of the main aperture.

Abstract: A MEMS shutter including: a semiconductor substrate traversed by an aperture; a first semiconductor layer and a second semiconductor layer, which form a supporting structure fixed to the substrate; a plurality of deformable structures, each of which is formed by a corresponding portion of at least one between the first and second semiconductor layers; a plurality of actuators; a plurality of shielding structures, each of which is formed by a corresponding portion of at least one between the first and second semiconductor layers, the shielding structures being arranged angularly around the underlying aperture so as to provide shielding of the aperture, each shielding structure being further coupled to the supporting structure via a deformable structure.

Abstract: A microelectromechanical gyroscope device has: a detection structure, provided with a mobile mass; and an integrated electronic circuit, coupled to the detection structure and which provides a bias signal to the detection structure to cause its oscillation at a resonance frequency and acquires a detection signal from the detection structure indicative of a detected angular velocity. When the gyroscope device is powered, the integrated electronic circuit implements a start-up phase, following a previous power-down, wherein the mobile mass is biased to have an increase in the oscillation up to a target oscillation amplitude, followed by a maintenance phase at the target oscillation amplitude. The integrated electronic circuit is provided with a time counter stage for measuring a duration of a time interval from the previous power-down and adjusts the bias of the mobile mass during the start-up phase as a function of the measured duration of the time interval.

Abstract: A phase change memory element has a memory region, a first electrode and a second electrode. The memory region is arranged between the first and the second electrodes and has a bulk zone and an active zone. The memory region is made of a germanium, antimony and tellurium based alloy, wherein germanium is in a higher percentage than antimony and tellurium in the bulk zone of the memory region. The active zone is configured to switch between a first stable state associated with a first memory logic level and a second stable state associated with a second memory logic level. The active zone has, in the first stable state, a uniform, amorphous structure and, in the second stable state, a differential polycrystalline structure including a first portion, having a first stoichiometry, and a second portion, having a second stoichiometry different from the first stoichiometry.

Abstract: The electronic module has a three-dimensional frame, a printed circuit board and a plurality of electronic devices. The printed circuit board is fixed to the three-dimensional frame and has a plurality of support portions which extend transversely to each other in space. The electronic devices are fixed to the printed circuit board and are operatively coupled to each other. The electronic devices are arranged on at least one support portion of the printed circuit board.

Abstract: An electronic device, comprising: a semiconductor body of silicon carbide; an insulating layer on a surface of the semiconductor body; a layer of metal material extending in part on the surface of the semiconductor body and in part on the insulating layer; a SiN interface layer on the layer of metal material and the insulating layer; a passivation layer on the interface layer; and an anchoring element that protrudes from the passivation layer towards the first insulating layer and extends in the first insulating layer underneath the interface layer.

Abstract: The current technique provides an unmanned vehicle that is capable of travelling in the air, on the ground and/or in the water. The driving force of the unmanned vehicle is provided by at least one propelling module that includes a motor, a shaft and a propeller. The propelling module is coupled to a chassis. The chassis includes one or more support elements that each couples to one or more aileron member. An aileron member is configured to tilt with or about the support element to change fluid flux about the aileron member and thus change a position of the propelling force.

Abstract: A communication network comprises a plurality of electronic devices coupled via a plurality of communication links. The communication links comprise links over a first physical medium and links over a second physical medium. A method of operating the network comprises issuing, at an originator device, a path request message directed towards a destination device, transmitting the path request message from the originator device to the destination device through a first set of intermediate devices via a forward sequence of links, issuing, at the destination device, a path reply message directed towards the originator device, and transmitting the path reply message from the destination device to the originator device through a second set of intermediate devices via a reverse sequence of links.

Abstract: According to principles as discussed herein, an EEPROM cell is provided and then, after testing the code, using the exact same architecture, transistors, memory cells, and layout, the EEPROM cell is converted to a read-only memory (“ROM”) cell. This conversion is done on the very same integrated circuit die using the same layout, design, and timing with only a single change in an upper level mask in the memory array. In one embodiment, the mask change is the via mask connecting metal 1 to poly. This allows the flexibility to store the programming code as non-volatile memory code, and then after it has been tested, at time selected by the customer, some or all of that code from a code that can be written to a read-only code that is stored in a ROM cell that is composed the same transistors and having the same layout.

Abstract: A substrate has a plurality of microdots positioned thereon. Each microdot contains one or more primers for gene amplification for a particular target gene. The microdots are placed on the substrate and the substrate is positioned in a housing. The housing has a sample fluid to be tested introduced therein covering the microdot array. While the sample fluid is overlying the substrate, the amplification of the target gene is carried out if it is present within the sample. If the target gene that matches the primers is not present, then amplification will not take place. The fluid also contains fluorophores which will be fixed into the gene as it increases in size as it clearly detects if gene amplification has occurred by detecting the amount of light detected for a particular microdot. In a preferred embodiment, the sample fluid is placed on top of a sealing layer that is less dense then water, such as wax or mineral oil.

Abstract: A microelectromechanical sensor device has a detection structure, having: a substrate, with a top surface; an inertial mass, suspended above the top surface of the substrate and elastically coupled to a rotor anchor so as to perform an inertial movement relative to the substrate as a function of a quantity to be detected; and stator electrodes, integrally coupled to the substrate at respective stator anchors and capacitively coupled to the inertial mass so as to generate a differential capacitive variation in response to, and indicative of, the quantity to be detected. In particular, the inertial mass performs, as the inertial movement, a translation movement along a vertical axis orthogonal to the top surface of the substrate; and the stator electrodes are arranged in a suspended manner above the top surface of the substrate.

Abstract: A preamplifier circuit comprises a first pair of transistors and a second pair of transistors having current flow paths therethrough coupled at first and second output nodes and providing first and second current flow lines intermediate a supply node and ground. The two pairs of transistors comprise: first and second input transistors located intermediate the outputs nodes and one of the supply node and ground providing respective input nodes, first and second load transistors intermediate the output nodes and the other of the supply node and ground. The load transistors have control terminals capacitively coupled to the other of the supply node and ground and a reset switch arrangement is provided periodically activatable to short the first output node, the second output node as well as the control terminals of the first load transistor and the second load transistor.

Abstract: The power device is formed by a D-mode HEMT and by a MOSFET in cascade to each other and integrated in a chip having a base body and a heterostructure layer on the base body. The D-mode HEMT includes a channel area formed in the heterostructure layer; the MOSFET includes a first and a second conduction region formed in the base body, and an insulated-gate region formed in the heterostructure layer, laterally and electrically insulated from the D-mode HEMT. A first metal region extends through the heterostructure layer, laterally to the channel area and in electrical contact with the channel area and the first conduction region.

Abstract: In an embodiment, a circuit for tripling frequency is configured to receive an input voltage (Vin) having a sinusoidal shape and a base frequency. The circuit has a first and a second transistor pair that are cross-coupled, and a trans-characteristics f(Vin) approximating a polynomial nominal trans-characteristic given by f ? ( V i ? n ) = ( 3 A ? V i ? n - 4 A 3 ? V i ? n 3 ) ? g m where A represents an amplitude of the input voltage and gm is a transconductance of transistors of the first and second transistor pairs.

Abstract: A method to determine a relative delay between a current-overshoot signal and a write data signal for a hard disk drive preamplifier, the method including using a memory element to strobe a test current-overshoot signal with a test data signal; counting a number of strobed transitions of the test current-overshoot signal; adjusting the delay based on the number of strobed transitions; setting a phase difference between the current-overshoot signal and the write data signal according to the delay; and using the memory element to strobe the current-overshoot signal with the write data signal.