Abstract: A transducer modulus, comprising: a substrate; a cap on the substrate, defining a chamber; and a sensor modulus in the chamber, integrating a first MEMS transducer facing the chamber, and a second MEMS transducer facing the supporting substrate. The cap has a first opening that forms a path for access of the first environmental quantity exclusively towards a sensitive element of the first transducer, and the supporting substrate has a second opening that forms a path for access of the second environmental quantity exclusively towards a sensitive element of the second transducer.

Abstract: A semiconductor device includes a strain gauge on a substrate, the strain gauge configured to measure a stress of the substrate; and a temperature sensor disposed within the substrate, the temperature sensor being decoupled from the stress of the substrate.

Abstract: A processing system includes a first processing unit; a second processing unit; and a cryptographic coprocessor communicatively coupled to the first processing unit and the second processing unit. The cryptographic coprocessor includes a key storage memory for storing a cryptographic key; a first interface configured to receive source data to be processed directly from the first processing unit; a hardware cryptographic engine configured to process the source data as a function of the cryptographic key stored in the key storage memory; a second interface configured to receive a first cryptographic key directly from the second processing unit; and a hardware key management circuit configured to store the first cryptographic key in the key storage memory.

Abstract: Application data and error correction code (ECC) checkbits associated with that application data are stored in a first memory. The ECC checkbits, but not the application data, are stored in a second memory. In response to a request to read the application data from the first memory, the ECC checkbits from the first memory are also read and used to detect, and possibly correct, errors in the read application data. The ECC checkbits are further output from both the first and second memories for bit-by-bit comparison. In response to a failure of the bit-by-bit comparison, a signal indicating possible malfunction of one or the other or both of the first and second memories is generated.

Abstract: A first Radio-Frequency-to-Direct-Current (RF2DC) transducer receives a first signal from a sensing antenna and generates energy stored by an energy storage circuit. An energy transfer circuit is controllably switched between an energy storage state where energy is stored in the energy storage state and an energy transfer state where stored energy is transferred to a load. The voltage at the energy storage circuit is alternatively variable between an upper value and a lower value around a voltage setting point. A second RF2DC transducer, which is a down-scaled replica of the first RF2DC transducer, produces a second signal indicative of an open-circuit voltage of the first RF2DC transducer. The voltage setting point is set as a function of the second signal indicative of the open-circuit voltage of the first RF2DC transducer.

Abstract: A microelectromechanical microphone includes: a substrate; a sensor chip, integrating a microelectromechanical electroacoustic transducer; and a control chip operatively coupled to the sensor chip. In one embodiment, the sensor chip and the control chip are bonded to the substrate, and the sensor chip overlies, or at least partially overlies, the control chip. In another embodiment, the sensor is bonded to the substrate and a barrier is located around at least a portion of the sensor chip.

Abstract: An IC card includes a first visible layer comprising a nonmetallic natural material having a physical structure including a unique visual pattern. The IC card further includes a storage device configured to store a reference image of the unique visual pattern. The reference image is a scan of the unique visual pattern. The reference image is configured to be visually compared with the unique visual pattern for authentication. A second layer is included on a bottom surface of the first visible layer. The first visible layer and the second layer are laminated together. Each of the second layer and the nonmetallic natural material of the first visible layer have a same size to define a shape of the IC card.

Abstract: A piezoelectric MEMS transducer formed in a body of semiconductor material, which has a central axis and a peripheral area and comprises a plurality of beams, transverse to the central axis and having a first end, coupled to the peripheral area of the body, and a second end, facing the central axis; a membrane, transverse to the central axis and arranged underneath the plurality of beams; and a pillar, parallel to the central axis and rigid with the second end of the beams and to the membrane. The MEMS transducer further comprises a plurality of piezoelectric sensing elements arranged on the plurality of beams.

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

Abstract: A method for programming a phase-change-memory device of a differential type comprises, in a first programming mode, supplying, during a first time interval, a same first programming current, of a type chosen between a SET current and a RESET current, to all the direct and complementary memory cells that are to be programmed with said first programming current; and, in a second programming mode, supplying, during a second time interval, a same second programming current, of the other type chosen between a SET current and a RESET current, to all the direct and complementary memory cells that are to be programmed with said second programming current, thus completing, in just two time steps, writing of a logic word in the memory device.

Abstract: A leadframe for semiconductor devices, the leadframe comprising a die pad portion having a first planar die-mounting surface and a second planar surface opposed the first surface, the first surface and the second surface having facing peripheral rims jointly defining a peripheral outline of the die pad wherein the die pad comprises at least one package molding compound receiving cavity opening at the periphery of said first planar surface.

Abstract: A semiconductor substrate such as a semiconductor wafer includes a cutting line having a length. The semiconductor substrate is cut along the line by first selectively applying laser beam ablation energy to the semiconductor substrate a certain locations along the cutting line and then blade sawing along cutting line. The semiconductor substrate thus includes one or more ablated regions as well as one or more unablated regions at the cutting line.

Abstract: An integrated device includes a deep plug. The deep plug is formed by a deep trench extending in a semiconductor body from a shallow surface of a shallow trench isolation. A trench contact makes contact with a conductive filler of the deep trench through the shallow trench at its shallow surface. A system includes at least one integrated device with the deep plug. Moreover, a corresponding process for manufacturing this integrated device includes steps for forming and filling the deep trench before forming the shallow trench isolation and trench window through which the trench contact extends to make contact with the conductive filler. The semiconductor body has a thickness, and the deep trench extends into the semiconductor body less than the thickness.

Abstract: For manufacturing an optical microelectromechanical device, a first wafer of semiconductor material having a first surface and a second surface is machined to form a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements which extend between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. A second wafer is machined separately to form a chamber delimited by a bottom wall having a through opening. The second wafer is bonded to the first surface of the first wafer in such a way that the chamber overlies the actuation structure and the through opening is aligned to the suspended mirror structure. Furthermore, a third wafer is bonded to the second surface of the first wafer to form a composite wafer device. The composite wafer device is then diced to form an optical microelectromechanical device.

Abstract: A microelectromechanical mirror device has a fixed structure defining a cavity. A tiltable structure carrying a reflecting surface is elastically suspended above the cavity with a main extension in a horizontal plane. Elastic elements are coupled to the tiltable structure and at least one first pair of driving arms, which carry respective regions of piezoelectric material, are biasable to cause rotation of the tiltable structure about at least one first axis of rotation parallel to a first horizontal axis of the horizontal plane. The driving arms are elastically coupled to the tiltable structure on opposite sides of the first axis of rotation and are interposed between the tiltable structure and the fixed structure. The driving arms have a thickness, along an orthogonal axis transverse to the horizontal plane, smaller than a thickness of at least some of the elastic elements coupled to the tiltable structure.

Abstract: A micro-electro-mechanical device is formed by a fixed structure having a cavity. A tiltable structure is elastically suspended over the cavity and has a main extension in a tiltable plane and is rotatable about a rotation axis parallel to the tiltable plane. A piezoelectric actuation structure includes first and second driving arms carrying respective piezoelectric material regions and extending on opposite sides of the rotation axis. The first and the second driving arms are rigidly coupled to the fixed structure and are elastically coupled to the tiltable structure. During operation, a stop structure limits movements of the tiltable structure with respect to the actuation structure along a planar direction perpendicular to the rotation axis. The stop structure has a first planar stop element formed between the first driving arm and the tiltable structure and a second planar stop element formed between the second driving arm and the tiltable structure.

Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.

Abstract: A method for data decryption comprises receiving, over an AXI bus operating in burst mode, data access requests for data units stored in a memory, subdividing the requests received into requests for encrypted data units and requests for non-encrypted data units, forwarding both requests for encrypted data units and requests for non-encrypted data units towards the memory, retrieving the respective sets of data units over the AXI bus, and applying Advanced Encryption Standard, AES, processing to the requests for encrypted data units by calculating decryption masks for the encrypted data units and applying the decryption masks calculated to the encrypted data units retrieved. Subdividing the requests into requests for encrypted data units and requests for non-encrypted data units is performed depending on data start addresses and security information conveyed by the requests.

Abstract: Power MOS device, in which a power MOS transistor has a drain terminal that is coupled to a power supply node, a gate terminal that is coupled to a drive node and a source terminal that is coupled to a load node. A detection MOS transistor has a drain terminal that is coupled to a detection node, a gate terminal that is coupled to the drive node and a source terminal that is coupled to the load node. A detection resistor has a first terminal coupled to the power supply node and a second terminal coupled to the detection node.

Abstract: A semiconductor device comprises at least one semiconductor die electrically coupled to a set of electrically conductive leads, and package molding material molded over the at least one semiconductor die and the electrically conductive leads. At least a portion of the electrically conductive leads is exposed at a rear surface of the package molding material to provide electrically conductive pads. The electrically conductive pads comprise enlarged end portions extending at least partially over the package molding material and configured for coupling to a printed circuit board.