Abstract: First and second n-channel FETs are connected in series between first and second terminals with an intermediate switching node. First and second driver circuits drive gates of the first and second n-channel FETs, respectively, in response to drive signals. The first driver circuit does not implement slew-rate control. A first resistor and capacitor are connected in series between the output of the first driver circuit and an intermediate node. A first electronic switch is connected between the intermediate node and the first terminal. A second electronic switch is connected between the intermediate node and the gate terminal of the first n-channel FET. A second resistor and a third electronic switch are connected in series between the gate terminal of the first n-channel FET and the switching node. A control circuit generates the drive signals and a first, second and third control signal for the first, second and third electronic switch.

Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.

Abstract: An optical device for detecting a first chemical species and a second chemical species contained in a specimen, which includes: a first optical sensor, which may be optically coupled to an optical source through the specimen and is sensitive to radiation having a wavelength comprised in a first range of wavelengths; and a second optical sensor, which may be optically coupled to the optical source through the specimen and is sensitive to radiation having a wavelength comprised in a second range of wavelengths, different from the first range of wavelengths.

Abstract: Color signals to be displayed on a colored display surface and having a first gamut in a color space, are subjected to radiometric compensation. An embodiment includes displaying on the colored surface a set of control points of a known color, acquiring via a camera the control points as displayed on the colored surface and evaluating at least one second color gamut of the control points displayed on the colored surface. The second color gamut(s) is/are misaligned with respect to the first color gamut due to the display surface being a colored surface. The method may also include evaluating as an intersection gamut, the misalignment of the second color gamut(s) with respect to the first color gamut, calculating the color transformation operator(s) as a function of the misalignment evaluated, and applying the color transformation operator(s) to the color signals for display on the colored display surface.

Abstract: A circuit for generating a bandgap voltage includes a circuit module for generation of a base-emitter voltage difference formed by a pair of PNP bipolar substrate transistors which identify a first current path and a second current path. A first current mirror of an n type is connected between the first and second branches and is further connected via a resistance for adjustment of the bandgap voltage to the second bipolar transistor. A second current mirror of a p type is connected between the first and second branches, and connected so that the current mirrors repeat current of each other. In operation to generate the bandgap voltage, current flows from the supply voltage to ground only through said the first and second bipolar substrate transistors.

Abstract: A remote access device and methods of operation thereof are provided for accessing a physical object or location. The remote access device includes an accelerometer, a wireless transmitter, and control circuitry. The control circuitry causes the wireless transmitter to transition between a first operating mode and a second operating mode in response to receiving signals from the accelerometer indicating a first change in motion states of the remote access device. The control circuitry causes the wireless transmitter to transition between a first operating mode and a second operating mode in response to receiving signals from the accelerometer indicating a second change in motion states of the remote access device. The control circuitry further causes the wireless transmitter to transition between the first operating mode and the second operating mode in response to receiving signals from the accelerometer indicating a third change in motion states of the remote access device.

Abstract: A normally-off HEMT transistor includes a heterostructure including a channel layer and a barrier layer on the channel layer; a 2DEG layer in the heterostructure; an insulation layer in contact with a first region of the barrier layer; and a gate electrode through the whole thickness of the insulation layer, terminating in contact with a second region of the barrier layer. The barrier layer and the insulation layer have a mismatch of the lattice constant (“lattice mismatch”), which generates a mechanical stress solely in the first region of the barrier layer, giving rise to a first concentration of electrons in a first portion of the two-dimensional conduction channel which is under the first region of the barrier layer which is greater than a second concentration of electrons in a second portion of the two-dimensional conduction channel which is under the second region of the barrier layer.

Abstract: A method of sensing a temperature includes providing a voltage to reverse bias a PN junction of a junction diode. The PN junction has a junction capacitance. The method includes providing a reverse bias voltage change across the PN junction and detecting a value of the junction capacitance in response to the reverse bias voltage change. The value of the junction capacitance is a function of a temperature of the PN junction. An output signal is generated based on the detected junction capacitance, where the output signal indicates a temperature of an environment containing the junction diode.

Abstract: A three-phase load is powered by a PWM (e.g., SVPWM) driven DC-AC inverter having a single shunt-topology. A shunt voltage and a branch voltage of the inverter (across a transistor to be calibrated) are measured during a second period of each SVPWM sector, and the drain-to-source resistance of the calibrated transistor is calculated. During the fourth period of each SVPWM sector, the branch voltage is measured again, and another branch voltage across another transistor is measured. Using the drain-to-source resistance of the calibrated transistor and the voltage across the calibrated transistor measured during the fourth period, the phase current through the calibrated transistor is calculated. Using the other branch voltage measured during the fourth period and the drain-to-source resistance of its corresponding transistor (known from a prior SVPWM sector), the phase current through that transistor is calculated. From the two calculated phase currents, the other phase current can be calculated.

Abstract: A first RF-to-DC circuit receives a radiofrequency signal and produces a first converted signal delivered to an energy storage circuit. A second RF-to-DC circuit, which is a down-scaled replica of the first RF-to-DC circuit, produces a second converted signal from the radiofrequency signal that is indicative of an open-circuit voltage of the first RF-to-DC circuit. The first RF-to-DC section includes N sub-stages, with a sub-set of sub-stages being selectively activatable. A window comparison of the second converted signal generates a first signal and a second signal indicative of whether the second converted signal is within a range of values proportional to a voltage reference signal. The sub-set of sub-stages is selectively deactivated, respectively activated, when the performed window comparison has a first result, respectively, a second result.

Abstract: A hardware secure module includes a processing unit and a cryptographic coprocessor. The cryptographic coprocessor includes a key storage memory; a hardware key management circuit configured to store a first cryptographic key in the key storage memory; a first interface configured to receive source data to be processed; a second interface configured to receive the first cryptographic key from the processing unit for storing in the key storage memory; a hardware cryptographic engine configured to process the source data as a function of the first cryptographic key stored in the key storage memory; and a third interface configured to receive a second cryptographic key. The hardware secure module further includes a non-volatile memory configured to store the second cryptographic key; and a hardware configuration module configured to read the second cryptographic key from the non-volatile memory and send the second cryptographic key to the third interface.

Abstract: A microelectromechanical microphone includes: a substrate; a sensor chip, integrating a microelectromechanical electroacoustic transducer; and a control chip operatively coupled to the sensor chip. In one embodiment, the sensor chip and the control chip are bonded to the substrate, and the sensor chip overlies, or at least partially overlies, the control chip. In another embodiment, the sensor is bonded to the substrate and a barrier is located around at least a portion of the sensor chip.

Abstract: A first device includes a rectangular substrate having a first width and a first length and a first pattern of electrical interface nodes at first, second and third sides with a first set of electrical interface nodes at the fourth side. A second device includes a second rectangular substrate having a second width equal to the first width, a second length and a median line extending in the direction of the second width. A second pattern of electrical interface nodes for the second device includes two unmorphed replicas of the first pattern arranged mutually rotated 180° on opposite sides of the median line as well as two second sets of electrical interface nodes formed by two smaller morphed replicas of the first set of electrical interface nodes arranged mutually rotated 180° on opposite sides of said median line.

Abstract: A bandgap circuit includes a supply node as well as a first and second bipolar transistors having jointly coupled base terminal at a bandgap node providing a bandgap voltage. First and second current generators are coupled to the supply node and supply mirrored first and second currents, respectively, to first and second circuit nodes. A third circuit node is coupled to the first bipolar transistor via a first resistor and coupled to ground via a second resistor, respectively. The third circuit node is also coupled to the second bipolar transistor so that the second resistor is traversed by a current which is the sum of the currents through the bipolar transistors. A decoupling stage intermediate the current generators and the bipolar transistors includes first and second cascode decoupling transistors having jointly coupled control terminals receiving a bias voltage sensitive to the bandgap voltage.

Abstract: A plastic material substrate has a die mounting location for a semiconductor die. Metallic traces are formed on selected areas of the plastic material substrate, wherein the metallic traces provide electrically-conductive paths for coupling to the semiconductor die. The semiconductor die is attached onto the die mounting location. The semiconductor die attached onto the die mounting location is electrically bonded to selected ones of the metallic traces formed on the plastic material substrate. A package material is molded onto the semiconductor die attached onto the die mounting location.

Abstract: A leadframe includes a die pad and a set of electrically conductive leads. A semiconductor die, having a front surface and a back surface opposed to the front surface, is arranged on the die pad with the front surface facing away from the die pad. The semiconductor die is electrically coupled to the electrically conductive leads. A package molding material is molded over the semiconductor die arranged on the die pad. A stress absorbing material contained within a cavity delimited by a peripheral wall on the front surface of the semiconductor die is positioned intermediate at least one selected portion of the front surface of the semiconductor die and the package molding material.

Abstract: A leadframe has a die pad area and an outer layer of a first metal having a first oxidation potential. The leadframe is placed in contact with a solution containing a second metal having a second oxidation potential, the second oxidation potential being more negative than the first oxidation potential. Radiation energy is then applied to the die pad area of the leadframe contacted with the solution to cause a local increase in temperature of the leadframe. As a result of the temperature increase, a layer of said second metal is selectively provided at the die pad area of the leadframe by a galvanic displacement reaction. An oxidation of the outer layer of the leadframe is then performed to provide an enhancing layer which counters device package delamination.

Abstract: A photonic testing device includes a substrate, an optical device under test (DUT) disposed over the substrate, and an optical input circuit disposed over the substrate. The optical input circuit includes a first plurality of inputs each configured to transmit a respective optical test signal of a plurality of optical test signals. Each of the plurality of optical test signals includes a respective dominant wavelength of a plurality of dominant wavelengths. The optical input circuit further includes an output coupled to an input waveguide of the optical DUT. The output is configured to transmit a combined optical test signal comprising the plurality of optical test signals.

Abstract: A semiconductor MOS device having an epitaxial layer with a first conductivity type formed by a drain region and by a drift region. The drift region accommodates a plurality of first columns with a second conductivity type and a plurality of second columns with the first conductivity type, the first and second columns alternating with each other and extending on the drain region. Insulated gate regions are each arranged on top of a respective second column; body regions having the second conductivity type extend above and at a distance from a respective first column, thus improving the output capacitance Cds of the device, for use in high efficiency RF applications.

Abstract: A method for power management in an electronic circuit that comprises a processing system and an RF embedded circuit includes: generating a first regulated voltage with a power regulation module of the RF embedded circuit; generating a second regulated voltage from the first regulated voltage with a first linear regulator of the processing system; and controlling the power regulation module of the RF embedded circuit to operate according to a plurality of operation modes. The operation modes include: a first sleep mode in which a switched-mode power supply of the RF embedded circuit is off and a second linear regulator of the RF embedded circuit is off; a second sleep mode in which a switched-mode power supply is off and the second linear regulator is on; and a third sleep mode in which the switched-mode power supply is on and the second linear regulator is off.