Abstract: A receiver for receiving a data stream comprises a filtering arrangement for filtering said received data stream and a processor. The filtering arrangement is arranged to load at least a part of said data stream, to filter at least part of said data stream and to read at least part of said data stream. The filtering arrangement has a first mode in which said steps are carried out and a second mode in which said processor is arranged to interrupt the steps carried out by said filtering arrangement.

Abstract: An improved fractional divider that comprises an integer value storage means containing the integer part of the division value ‘K’ connected to the input of a programmable counter means that is configured for a count value of ‘K’ or ‘K+1’ depending upon the state of a count control signal and generates the output signal as well a terminal count signal which is connected to an enable input of a fractional accumulator means that produces the count control signal on an addition overflow and has a first input connected to its result output and a second input connected to the output of a fractional value storage means, containing the fractional part of the divider value.

Abstract: A MOS semiconductor device formed on a substrate of a first conductivity type is provided. The device includes active zones for elementary active elements, and at least one inactive zone suitable for electric signal input or output. The substrate is connected with the drain terminal of the device, and at least one of the elementary active elements includes a body region of a second conductivity type that is connected with the source terminal of the device. The at least one inactive zone includes a semiconductor region of the second conductivity type formed in the substrate and adjacent a surface of the substrate, a conductive layer located over the semiconductor region, and a silicon oxide layer located between the semiconductor region and the conductive layer. The silicon oxide layer has alternating first zones and second zones that are contiguous to each other, with the first zones having a greater thickness than the second zones.

Abstract: According to the multilevel programming method, each memory location can be programmed at a non-binary number of levels. The bits to be stored in the two locations are divided into two sets, wherein the first set defines a number of levels higher than the non-binary number of levels. During programming, if the first set of bits to be written corresponds to a number smaller than the non-binary number of levels, the first set of bits is written in the first location and the second set of bits is written in the second location; ifit is greater than the non-binary number of levels, the first set of bits is written in the second location and the second set of bits is written in the first location. The bits of the first set in the second location are stored in different levels with respect to the bits of the second set.

Abstract: A method for manipulating MEMS devices integrated on a semiconductor wafer and intended to be diced one from the other includes bonding of the semiconductor wafer including the MEMS devices on a support with interposition of a bonding sheet. The method may also include completely cutting or dicing of the semiconductor wafer into a plurality of independent MEMS devices, and processing the MEMS devices diced and bonded on the support in a treatment environment for semiconductor wafers. A support for manipulating MEMS devices is also included.

Abstract: A memory for a computer system that includes a plurality of memory banks which provide an interleaved memory region as well as X and Y memory regions. Each memory access address includes a most significant set of bits indicating which of the interleaved, X, or Y memory regions is to be accessed. Each memory access address also includes a least significant set of bits indicating an address within the bank of the access region. At least one bit in the least significant set is a bank selector and one bit of the most significant set of bits is an X or Y region selector.

Abstract: A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

Abstract: A switch-type regulator with a soft-start function having an output terminal supplying an output voltage, and including an error amplifier, having a first input receiving a constant reference voltage, a second input receiving a feedback voltage dependent on the output voltage, and supplying a compensation terminal with an error voltage correlated to the difference between the reference voltage and the feedback voltage. The error amplifier includes a differential amplifier. The regulator also includes a compensation network connected to the compensation terminal. A soft-start function is obtained exploiting the compensation network.

Abstract: It is described a circuit generating a stable reference voltage with respect to temperature, which circuit is connected between first and second voltage references and comprises at least one current generating circuit adapted to inject a reference current into a resistive element connected between a base terminal of a bipolar transistor and an additional voltage reference. The bipolar transistor is connected between the first and second voltage references and to an output terminal of the generator circuit whereat the stable reference voltage with respect to temperature is. The generator circuit further comprises at least another resistive element, feedback connected between the output terminal of the generator circuit and the base terminal of the bipolar transistor to enable injecting additional current, having reverse dependence on temperature from the reference current, into the resistive element.

Abstract: A current generator with thermal protection has an input terminal and an output terminal. The current generator includes a voltage generator, first and second controlled switches, a temperature sensor, and a control circuit. The first controlled switch has a control terminal applied to the voltage generator, a first terminal connected to the input terminal, and a second terminal connected to a resistance. The second controlled switch has a control terminal coupled to the voltage generator, a first terminal connected to the resistance, and a second terminal connected to the output terminal. The temperature sensor of the current generator measures the temperature of the generator, and the control circuit controls the second controlled switch so as to open the second controlled switch when the temperature of the current generator overcomes a preset temperature.

Abstract: A final stage for a high-speed comparator, and a method of driving an electric load having a capacitive component are disclosed. The final stage comprises a first or pull-up component and a second or pull-down component which are connected in series with each other between a first or supply voltage reference and a second voltage reference. A dynamic drive device and a separate static drive device are coupled to each component of the output stage. Each component of the final stage is driven separately according to whether it is in a static or a dynamic load condition.

Abstract: Herein described is a driver circuit of a fluorescent lamp having a first and a second electrode and igniting when the voltage between the first and second Electrode exceeds a given threshold voltage. The driver circuit comprises an inductance coupled to a supply voltage and to a terminal of the first electrode a first condenser coupled to the other terminal of the first electrode and to a terminal of the second electrode, a control device comprising a first and a second system of switches capable of guaranteeing oscillations of a voltage signal on the inductance and on the first condenser up to the ignition of the lamp. The driver circuit comprises a device associated to the control device and capable of acting on the first system of switches so as to regulate the frequency of the oscillations from a frequency greater than the resonance frequency of the inductance and of the first condenser to the same resonance frequency so as to guarantee a preheating of the first and second electrodes.

Abstract: A manufacturing process providing a zener diode formed in an N-type well housing a first N-type conductive region and having a doping level higher than the well, and a second P-type conductive region arranged contiguous to the first conductive region. The first conductive region is connected, through a third N-type conductive region having the same doping level as the first conductive region, to a conductive material layer overlying the gate oxide layer to be protected. The third conductive region, the well, and the substrate form an N+/N/P diode that protects the gate oxide layer during manufacture of the integrated device from the deposition of the polycrystalline silicon layer that forms the gate regions of the MOS elements.

Abstract: A mixer including a stage for inputting a voltage signal to be shifted and a shift and output stage for providing frequency-shifted signals, a biasing network of the output stage including, between a high supply and a biasing node, a constant current source in parallel with an output element of a current mirror, an input element of which receives a bias order from the input stage.

Abstract: A user configurable dual bank memory device is disclosed. The memory device includes a plurality of core banks of memory cells and a set of storage elements having stored therein configuration information. The configuration may be used to configure or group core banks of memory cells together to form a dual bank memory device. The memory device includes control circuitry for preventing a memory read operation from being completed in a core bank or user-configured dual bank in which an ongoing memory modify (program or erase) operation is being performed. The memory device further includes a first set of sense amplifiers dedicated to performing sense amplification only during memory read operations, and a second set of sense amplifiers dedicated to performing sense amplification only during memory modify operations.

Abstract: The present invention proposes a method of disabling a particular decoder output during scan-mode testing without impacting the critical path during either scan-mode or the normal mode of operation. During scan-mode testing a known bit stream may be programmed into latches and provides a means of functional testing the device in question. Three embodiments are used in conjunction with a disable driver to pull an intermediate node HIGH. The intermediate node is inverted by an output driver, which disables the relevant decoder output. The first embodiment involves using a full CMOS gate, the second embodiment uses ratio logic and the third uses a weak pull-up resistor.

Abstract: A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor material body under the trenches to form cavities having a width larger than the trenches; covering the walls of the cavities with dielectric material; depositing non-conducting material different from thermal oxide to fill the cavities at least partially, so as to form a single-crystal island separated from the rest of the semiconductor material body. The isotropic etching permits the formation of at least two adjacent cavities separated by a support region of semiconductor material, which is oxidized together with the walls of the cavities to provide a support to the island prior to filling with non-conducting material.

Abstract: The fabrication process comprises a phase of producing a base region having an extrinsic base and an intrinsic base, and a phase of producing an emitter region comprising an emitter block having a narrower lower part located in an emitter window provided above the intrinsic base. Production of the extrinsic base comprises implantation of dopants, carried out after the emitter window has been defined, on either side of and at a predetermined distance dp from the lateral boundaries of the emitter window, so as to be self-aligned with respect to this emitter window, and before the emitter block is formed.

Abstract: A method for etching an organic dielectric material layer includes depositing an inorganic barrier layer on the organic dielectric material layer, and depositing an inorganic masking layer on the inorganic barrier layer. A masking resin layer is deposited on the inorganic masking layer. The method further includes patterning the masking resin layer and etching through the inorganic masking layer to expose the inorganic barrier layer. Remaining portions of the masking resin layer are removed, and the exposed inorganic barrier layer is etched to expose the organic dielectric material layer. The method further includes removing remaining portions of the inorganic masking layer, and etching the exposed organic dielectric material layer while using the inorganic barrier layer as a mask.

Abstract: A method for manufacturing a vertical power component on a silicon wafer, including the steps of growing a lightly-doped epitaxial layer of a second conductivity type on the upper surface of a heavily-doped substrate of a first conductivity type, the epitaxial layer having a thickness adapted to withstanding the maximum voltage likely to be applied to the power component during its operation; and delimiting in the wafer an area corresponding to at least one power component by an isolating wall formed by etching a trench through the epitaxial layer and diffusing from this trench a dopant of the first conductivity type of high doping level.