Abstract: A semiconductor power device with an insulated control circuit is formed in a chip of semiconductor material having predominantly a first type of conductivity. The device includes a region having a second type of conductivity, buried in the semiconductor material, and at least one insulated region of semiconductor material, containing at least part of the control circuit, disposed between the front surface of the chip and the buried region. The device also includes electrical contacts for the buried region and the semiconductor material. To eliminate the effects of parasitic components, the insulated region is delimited, at least partially, by an insulating dielectric material.

Abstract: A method and device of creating one or more buffer structures in a shared memory that exists between a host and a network device is disclosed. The method includes the step of storing within a block of shared memory an administration block having a base address and a descriptor ring parameter, which includes information relating to a descriptor ring and frame data buffer sizes. The base address of the administration block is written into the network device. An initialization command is then issued from the host to the network device. The network device reads the administration block and shared memory and one or more descriptors are constructed within the network device. Each descriptor points to a frame data buffer within shared memory. The descriptors are then stored.

Abstract: a firm ware based technique related to managing defective data sector information in a disk drive. Specially, technique provides for a dynamic method by which the number of spare or served alternate sectors and their locations can be allocated in the event defective data sectors exist. One advantage of the present invention exists for certain applications where the capacity and/or configuration of the drive are configured at run time. The present invention also has the advantage of improving performance when accessing “grown” defects by allowing the block relocation information to be placed physically closer to the location of the defective blocks.

Abstract: A method of producing a protective inhibitor layer of moisture-generated corrosion for aluminum (Al) alloy metallization layers, particularly in semiconductor electronic devices, includes chemically treating the metallization layer in at least two steps using a mixture of concentrated nitric acid and trace phosphoric acid to produce a thin protective phosphate layer. Alternatively, the method may include dipping the electronic device at least once in a mixture of a polar organic solvent and phosphoric acid (H3PO4) or phosphate derivatives thereof in a low percentage amount (e.g., with a phosphate reactant such as orthophosphoric acid or even R—HxPOy, where R is an alkaline type of ion group or an alkyl radical). The thin film may be formed on top of a thin layer of native aluminum oxide hydrate Al2O3.xH2O.

Abstract: An electronic device having first and second external pins; first and second pads connected to the first external pin by respective bonding wires; and third and fourth pads connected to the second external pin respective bonding wires, and to a first common line by respective resistors. By means of a circuit configuration of this type, the intactness of the bonding wires can easily be checked by carrying out a simple resistance measurement between the first and the second external pin.

Abstract: A sense amplifier circuit has two inputs for connection to complementary bit lines and an output terminal. The circuit comprises control circuitry responsive to control input for selectively tristating the output terminal.

Abstract: An adapter device for assisting debugging of a microprocessor on a single integrated circuit chip, the integrated circuit chip comprising an on-chip CPU with a plurality of registers, a communication bus providing a parallel communication path between the CPU and a first memory local to the CPU and an external communication port connected to the said bus on the integrated circuit chip, the communication port having an internal connection to the said bus of an internal parallel signal format and an external connection to the adapter unit of a first external format less parallel than the said internal format; the adapter device comprising a first communication unit for connection to the communication port with the first external format; a second communication unit for connection to an external computer device with a second external format having a higher latency than the first external format; a second memory local to the adapter device; and a processing unit local to the adapter device and operable: (a) in a f

Abstract: An integrated circuit including serial data input and output pins, on-chip functional circuitry and test logic, a test access port controller, and a data adaptor. The test access port controller is connected to effect communication of serial data across tile chip boundary via the input and output pins and is connectable to the test logic to effect communication of serial test data off-chip. The data adaptor is connectable to the input and output pins via the test access port controller. The data adaptor includes an interface for communicating data in the form of serial bits with the test access port controller under control of a first clock signal, and an interface for communicating data in the form of successive sets of parallel data and control signals with the on-chip functional circuitry under control of a second clock signal that is generated independently of the first clock signal.

Abstract: A circuit and method for programming a multilevel nonvolatile memory are disclosed. The circuit uses one or more address pins as one or more synchronization signals during a programming operation. The circuit includes a counter, controlled by the one or more address pins, for selecting a programming voltage to apply to an addressed memory cell. The circuit further includes compare circuitry for comparing the data value stored in the addressed memory cell with a desired data value. The counter is selectively incremented to apply a higher voltage for further programming of the addressed memory cell, based up the comparison.

Abstract: A circuit for selectively enabling one circuit from among a plurality of circuit alternatives of an integrated circuit, comprising selection circuit means for selecting one among said circuit alternatives. The selection means are controlled by bistable circuit means having a preferred state. Disactivatable forcing means associated to said bistable means are provided for forcing said bistable means in a state opposite than said preferred state, so that when said forcing means are disactivated the bistable circuit means automatically switch to said preferred state.

Abstract: An amplifier stage for a buffer with negative feedback includes an input stage having an input terminal, an output terminal, a first and a second supply terminal, a biasing branch, a first and a second balancing branch each comprising an active transistor for supplying, at the output terminal, a current depending on the current difference in the first and second balancing branches. The biasing branch and the first and second balancing branches are connected in parallel between the first and second supply terminals. The input terminal divides the biasing branch into two input branches having a constant-current generator. Each active transistor is connected to a corresponding current generator for receiving a control voltage correlated with a voltage at the terminals of the current generator.

Abstract: A control device for a focusing system of a compact disk (CD) reader is provided. The control device uses fuzzy logic incorporated to the audio data processing system of the CD reader which is adapted to detect and segregate a light beam reflected by the surface of the compact disk from an incident light beam to the surface. The fuzzy logic control device receives a focus error signal and a derivative of the focus error. It then calculates, using appropriate membership functions, output signals to provide to a focusing servo-system of the CD reader to adjust the distance of the focal plane from the light beam detecting circuitry.

Abstract: The voltage applied to the gate terminals of the charging transistors and charge-transfer transistors of two parallel pumping branches forming a charge pump is a boosted voltage generated internally and supplied in a crosswise manner. In particular, for driving the charge pump, first and second driving signals are generated respectively for the first and for the second pumping branch via a first and respectively a second driving circuit; the first and second driving signals are also supplied respectively to a first and to a second auxiliary charge pump to obtain respectively first and second voltage-boosted signals; and the first and second boosted voltages are respectively supplied to the second and to the first driving circuit.

Abstract: An electrically programmable and erasable memory includes memory cells, with each memory cell including a floating gate transistor and an access transistor. The floating gate transistor has a first terminal connected to the access transistor. The memory includes circuitry for respectively applying during an erasing phase a first signal, and a second signal on the control gate and on a second terminal of the floating gate transistors of the memory cells to be erased. The circuitry also applies to the gates of the corresponding access transistors of the memory cells to be erased a signal having a voltage that is different from a voltage of the first signal and has a low or zero potential difference with respect to a voltage of the second signal. The memory is protected against the effects from a breakdown of the gate oxide of an access transistor.

Abstract: There is provided an integrated circuit having active components including junctions formed in a monocrystalline substrate doped locally, and at least one passive component situated above the active components. The integrated circuit includes a first insulating layer separating the active components and abase of the passive component, and a metal terminal for electrically connecting the passive component with at least one of the active components. The metal terminal is formed in the thickness of the first insulating layer and has a contact surface that projects from the limits of a junction of the one active component. In a preferred embodiment, the passive component is a capacitor. Also provided is a method of fabricating an integrated circuit that includes MOS transistors and an onboard memory plane of DRAM cells in a matrix.

Abstract: A planar fingerprint pattern detecting array includes a large number of individual skin-distance sensing cells that are arranged in a row/column configuration. Each sensing cell includes an amplifier having an ungrounded input mode and an ungrounded output node. Output-to-input negative feedback that is sensitive to the fingerprint pattern is provided for each amplifier by way of (1) a first capacitor plate that is placed vertically under the upper surface of a dielectric layer and is connected to the ungrounded amplifier input node, (2) a second capacitor plate that is placed vertically under the upper surface of the dielectric layer in close horizontal spatial relation to the first capacitor plate and is connected to the ungrounded output node, and (3) an ungrounded fingertip whose fingerprint pattern is to be detected, which ungrounded fingertip is placed on the upper surface of the dielectric layer in close vertical spatial relation with the first and second capacitor plates.

Abstract: A CMOS active pixel for image sensors has a photosensitive element, a capacitive feedback element with a capacitance CF, and four transistors, namely a first transistor, two reset transistors and a transistor for the selection of the pixel. These transistors are laid out and controlled in such a way that the first transistor is mounted as an amplifier during the pixel reset phase and as a follower during the read phase.

Abstract: A voltage/current controller device, particularly for interleaving switching regulators, comprises: a DC/DC converter having a plurality of modules, with each module including a drive transistor pair connected in series between first and second supply voltage references, a current sensor connected to one transistor in the pair, and a current read circuit connected to the sensor. Advantageously, the read circuit comprises a transconductance amplifier connected across the current sensor to sense a voltage signal related to a load current being applied to each module, the transconductance amplifier reading the voltage signal with the transistor in the conducting state.

Abstract: The invention relates to a process for making a copper connection with a copper connection element in an integrated circuit comprising a damascene structure, with the connection element being covered successively with an encapsulation layer and at least one layer of dielectric material with a very low dielectric constant. The process includes the steps of etching the layer of dielectric material until the encapsulation layer is reached in order to obtain a connection hole opposite the connection element. A protective layer is then formed on the walls of the connection hole, with the protective layer preventing contamination of the dielectric layer from diffusion of copper. The protective and encapsulation layers are then etched at the bottom of the connection hole in such a way as to reveal the connection element. The connection hole is then filled with copper.

Abstract: A switching circuit is discussed that has an improved switching time in comparison with switching circuits of a known type. The circuit comprises three switches connected in series, the first switch being connected to an upper power supply and the third switch being connected to a lower power supply. The output of the circuit is connected to a circuit node located at the connection between the second and third switch. The input to the switching circuit is also connected to the third switch and additionally connected to a control circuit which provides a further output to control the first switch. The second switch is responsive to the voltage at the circuit node such that the second switch only conducts when the voltage at the output node falls below the upper supply voltage.