Abstract: A cell includes a Z2-FET-type structure that is formed with two front gates extending over an intermediate region between an anode region and a cathode region. The individual front gates of the two front gates are spaced apart by a distance that is shorter than 40% of a width of each individual front gate.

Abstract: A PLL includes a phase-frequency-detector-and-charge-pump-circuit (PFDCPC) receiving a reference signal and divided signal, and generating a charge-pump current. A loop-filter is between output of the PFDCPC and a reference-voltage. A first voltage-to-current converter (V2I1) has low gain, and a second voltage-to-current converter (V2I2) has high gain. A low-gain-path is between outputs of the PFDCPC and V2I1, and a high-gain-path is between the outputs of the PFDCPC and V2I2. A current-controlled-oscillator receives an input signal, and generates an output signal. A loop divider divides the output signal by a divider-value, producing the divided signal. The low-gain-path runs directly from the PFDCPC, through the V2I1, to the input of the current-controlled-oscillator. The high-gain-path runs from the PFDCPC to the loop-filter, from a tap of the loop-filter to a low-pass filter through a current mirror, from a tap of the low-pass filter through the V2I2, to the input of the current-controlled-oscillator.

Abstract: A microelectromechanical system (MEMS) gyroscope includes a driving mass and a driving circuit that operates to drive the driving mass in a mechanical oscillation at a resonant drive frequency. An oscillator generates a system clock that is independent of and asynchronous to the resonant drive frequency. A clock generator circuit outputs a first clock and a second clock that are derived from the system clock. The drive loop of the driving circuit including an analog-to-digital converter (ADC) circuit that is clocked by the first clock and a digital signal processing (DSP) circuit that is clocked by the second clock.

Abstract: A MEMS accelerometer includes a supporting structure, at least one deformable group and one second deformable group, which include, respectively, a first deformable cantilever element and a second deformable cantilever element, which each have a respective first end, which is fixed to the supporting structure, and a respective second end. The first and second deformable groups further include, respectively, a first piezoelectric detection structure and a second piezoelectric detection structure. The MEMS accelerometer further includes: a first mobile mass and a second mobile mass, which are fixed, respectively, to the second ends of the first and second deformable cantilever elements and are vertically staggered with respect to the first and second deformable cantilever elements, respectively; and a first elastic structure, which elastically couples the first and second mobile masses.

Abstract: An integrated device includes at least one MOS transistor having a plurality of cells. In each of one or more of the cells a disabling structure is provided. The disabling structure is configured to be in a non-conductive condition when the MOS transistor is switched on in response to a control voltage comprised between a threshold voltage of the MOS transistor and an intervention voltage of the disabling structure, or to be in a conductive condition otherwise. A system comprising at least one integrated device as above is also proposed. Moreover, a corresponding process for manufacturing this integrated device is proposed.

Abstract: A charge amplifier circuit is provided. The charge amplifier circuit is couplable to a transducer that generates an electrical charge that varies with an external stimulus. The charge amplifier circuit includes an amplification stage having an input node, couplable to the transducer, and an output node. The amplification stage biases the input node at a first direct current (DC) voltage. The charge amplifier circuit includes a feedback circuit, which includes a feedback capacitor, electrically coupled between the input and output nodes of the amplification stage. The feedback circuit includes a resistor electrically coupled to the input node, and a level-shifter circuit, electrically coupled between the resistor and the output node. The level-shifter circuit biases the output node at a second DC voltage and as a function of a difference between the second DC voltage and a reference voltage.

Abstract: The present disclosure relates to a structure comprising, in a trench of a substrate, a first conductive region separated from the substrate by a first distance shorter than approximately 10 nm; and a second conductive region extending deeper than the first region.

Abstract: A quad signal generator circuit generates four 2N-1 bit control signals in response to a 2N-1 bit thermometer coded signal. A digital-to-analog converter (DAC) circuit has 2N-1 unit DAC elements, with each unit DAC element including four switching circuits controlled by corresponding bits of the four 2N-1 bit control signals. Outputs of the 2N-1 unit DAC elements are summed to generate an analog output signal. The quad signal generator circuit controls a time delay applied to clock signals relative to the 2N-1 bit thermometer coded signal and a time delay applied to the 2N-1 bit thermometer coded signal relative to the delayed clock signals in logically generating the four 2N-1 bit control signals. The analog output signal may be a feedback signal in a sigma-delta analog-to-digital converter (ADC) circuit that includes a multi-bit quantization circuit operating to quantize a filtered loop signal to generate the 2N-1 bit thermometer coded signal.

Abstract: A method for forming a capacitive isolation trench in a semiconductor substrate includes digging a trench from a main surface of the substrate, the trench including an upper portion gradually widening from a neck in the direction of a lower portion of the trench. A coating of a first electrically isolating material is formed on the walls of the trench. A first semiconductor material is deposited on the coating, with the deposition being interrupted so as to leave a free space between the walls of the trench, the free space having an opening at the neck. A second electrically isolating material is deposited in the trench, with the deposition resulting in the formation of a plug closing the opening to form a closed cavity. The plug is etched so as to open the cavity, and a second semiconductor material or a metal is deposited so as to fill the cavity.

Abstract: A first element and a second element of a same device communicate with each other. The first element sends the second element a first piece of information representative of energy supplied by an electromagnetic field supplying power the device. The second element adapts its operating frequency as a function of the first piece of information.

Abstract: A substrate includes a first solid semiconductor region and a second semiconductor on insulator region. First and second cavities are simultaneously formed in the first and second regions, respectively, of the substrate using etching processes in two steps which form an upper portion and a lower portion of each cavity. The first and second cavities will each have a step at a level of an upper surface of the insulator of the second semiconductor on insulator region. A further oxidation of the first cavity produces a rounded or cut-off area for the upper portion.

Abstract: An encapsulation cover for an electronic package includes a frontal wall with a through-passage extending between faces. The frontal wall includes an optical element that allows light to pass through the through-passage. A cover body and a metal insert that is embedded in the cover body, with the cover body being overmolded over the metal insert, defines at least part of the frontal wall.

Abstract: Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Abstract: A capacitive element is located in an active region of the substrate and on a front face of the substrate. The capacitive element includes a first electrode and a second electrode. The first electrode is formed by a first conductive region and the active region. The second electrode is formed by a second conductive region and a monolithic conductive region having one part covering a surface of said front face and at least one part extending into the active region perpendicularly to said front face. The first conductive region is located between and is insulated from the monolithic conductive region and a second conductive region.

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.

Abstract: A semiconductor chip is mounted on a leadframe. A first portion of an insulating package for the semiconductor chip is formed from laser direct structuring (LDS) material molded onto the semiconductor chip. A conductive formation (provided by laser-drilling the LDS material and plating) extends between the outer surface of the first portion of insulating package and the semiconductor chip. An electrically conductive clip is applied onto the outer surface of the first portion of the insulating package, with the electrically conductive clip electrically coupled to the conductive formation and the leadframe. A second portion of the insulating package is made from package molding material (epoxy compound) molded onto the electrically conductive clip and applied onto the outer surface of the first portion of the insulating package.

Abstract: A compact microelectronic gas sensor module includes electrical contacts formed in such a way that they do not consume real estate on an integrated circuit chip. Using such a design, the package can be miniaturized further. The gas sensor is packaged together with a custom-designed Application Specific Integrated Circuit (ASIC) that provides circuitry for processing sensor signals to identify gas species within a sample under test. In one example, the output signal strength of the sensor is enhanced by providing an additional metal surface area in the form of pillars exposed to an electrolytic gas sensing compound, while reducing the overall package size. In some examples, bottom side contacts are formed on the underside of the substrate on which the gas sensor is formed. Sensor electrodes may be electrically coupled to the ASIC directly, or indirectly by vias.

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

Abstract: A squelch detection device is provided. The squelch detection device receives first and second input signals and first and second threshold voltages. The squelch detection device determines a first common mode of the first and second input signals and a second common mode of the first and second threshold voltages. The squelch detection device averages the first common mode with the second common mode to produce an average common mode and sets the first common mode of the first and second input signals to the average common mode. The squelch detection device sets the second common mode of the first and second threshold voltages to the average common mode and determines a state of a squelch signal, indicative of whether the first and second input signals are attributable to noise, based on the first and second input signals and the first and second threshold voltages.

Abstract: Disclosed herein is a bridge rectifier and associated control circuitry collectively forming a “regtifier”, capable of both rectifying an input time varying voltage as well as regulating the rectified output voltage produced. To accomplish this, the gate voltages of transistors of the bridge rectifier that are on during a given phase may be modulated via analog control (to increase the on-resistance of those transistors) or via pulse width modulation (to turn off those transistors prior to the end of the phase). Alternatively or additionally, the transistors of the bridge rectifier that would otherwise be off during a given phase may be turned on to help dissipate excess power and thereby regulate the output voltage. A traditional voltage regulator, such as a low-dropout amplifier, is not used in this design.