Patents Assigned to STMicroelectronics
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Publication number: 20120300140Abstract: An ITO sensor design and method for making the same is optimized to minimize noise from an LCD. The design includes a two layer sensor design having a transmitter line (Tx) placed in a first layer and a receiver line (Rx) placed in a second layer in a diamond-shaped pattern. The diamond shape maximizes the sensitivity of the sensor.Type: ApplicationFiled: December 27, 2011Publication date: November 29, 2012Applicant: STMicroelectronics Asia Pacific Pte Ltd.Inventors: Kusuma Adi NINGRAT, Wah Wah Soe
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Publication number: 20120301144Abstract: A system for exchanging information in an on-chip communication network using optical flow information for communication between Intellectual Property cores. The information is exchanged between a plurality of initiators and targets in the Intellectual Property cores. The system includes a router for propagating optical flow information from the initiators to the targets. Each initiator includes an interface to convert the traffic generated by the initiator and transmit it in the form of an optical flow within the on-chip communication network, and each target includes an interface to convert information from the optical form into the electrical form. The system is organized as a parametric system and includes programming module to define a first set of high level parameters, a second set of initiator network interface parameters and a third set of target network interface parameters.Type: ApplicationFiled: July 26, 2012Publication date: November 29, 2012Applicant: STMicroelectronics s.r.l.Inventors: Alberto Scandurra, Giovanni Strano, Carmelo Pistritto
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Patent number: 8320209Abstract: A memory circuit includes a first memory cell node capacitor, a first memory cell node transistor, a second memory cell node having a second memory cell node capacitor and a second memory cell node transistor, and a pre-charging circuit for pre-charging the first and second memory cell nodes to first and second voltage levels, respectively. The circuit includes a reference memory cell having first and second reference cell transistors with an equalizing transistor between, and a sense amplifier that detects a potential difference between reference bit lines from the reference memory cell and the first or second memory cell node, respectively. The reference cell transistors and equalizing transistor perform a first voltage equalization of the memory cell nodes at a predetermined voltage and a second voltage equalization of the memory cell nodes based on first or second reference signals respectively input to the first or second reference cell transistor.Type: GrantFiled: August 16, 2010Date of Patent: November 27, 2012Assignee: STMicroelectronics International N.V.Inventors: Sanjay Kumar Yadav, G Penaka Phani, Shallendra Sharad
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Patent number: 8321693Abstract: A multi-processing system-on-chip including a cluster of processors having respective CPUs is operated by: defining a master CPU within the respective CPUs to coordinate operation of said multi-processing system, running on the CPU a cluster manager agent. The cluster manager agent is adapted to dynamically migrate software processes between the CPUs of said plurality and change power settings therein.Type: GrantFiled: February 23, 2010Date of Patent: November 27, 2012Assignee: STMicroelectronics S.R.L.Inventors: Diego Melpignano, David Siorpaes, Paolo Zambotti, Antonio Borneo
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Patent number: 8320176Abstract: An electronic charge retention circuit for time measurement, implanted in an array of EEPROM memory cells, each including a selection transistor in series with a floating-gate transistor, the circuit including, on any one row of memory cells: a first subassembly of at least a first cell, the thickness of the dielectric of the tunnel window of the floating-gate transistor of which is less than that of the other cells; a second subassembly of at least a second cell, the drain and source of the floating-gate transistor of which are interconnected; a third subassembly of at least a third cell; and a fourth subassembly of at least a fourth cell, the tunnel window of which is omitted, the respective floating gates of the transistors of the cells of the four subassemblies being interconnected.Type: GrantFiled: July 20, 2007Date of Patent: November 27, 2012Assignee: STMicroelectronics S.A.Inventor: Francesco La Rosa
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Patent number: 8319530Abstract: A buffer circuit includes a biasing circuit operable to generate first and second biasing signals. A capacitive network includes an input adapted to receive an input signal and the capacitive network is operable responsive to the input signal to generate first and second bootstrapped signals. A push-pull stage includes first and second control inputs and an output. The push-pull stage is coupled to the biasing circuit to receive the first and second biasing signals on the first and second control inputs, respectively, and is coupled to the capacitive network to receive the first and second bootstrapped signals on the first and second control inputs, respectively. The push-pull stage is operable to generate a buffered output signal on the output responsive to the first and second bootstrapped signals.Type: GrantFiled: March 20, 2009Date of Patent: November 27, 2012Assignee: STMicroelectronics R&D (Shanghai) Co. LtdInventors: Jianhua Zhao, Sarah Gao
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Patent number: 8321691Abstract: A method for masking a digital quantity used by a calculation executed by an electronic circuit and including several iterations, each including at least one operation which is a function of at least one value depending on the digital quantity, the method including at least one first step of displacement of at least one operand of the operation in a storage element selected independently from the value.Type: GrantFiled: March 5, 2007Date of Patent: November 27, 2012Assignee: STMicroelectronics S.A.Inventor: Fabrice Romain
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Patent number: 8319339Abstract: A silicon chip surface mounted via balls attached to its front surface, wherein the front and rear surfaces of the chip are covered with a thermosetting epoxy resin having the following characteristics: the resin contains a proportion ranging from 45 to 60% by weight of a load formed of carbon fiber particles with a maximum size of 20 ?m and with its largest portion having a diameter ranging between 2 and 8 ?m, on the front surface side, the loaded resin covers from 45 to 60% of the ball height, on the rear surface side, the loaded resin has a thickness ranging between 80 and 150 ?m.Type: GrantFiled: July 8, 2010Date of Patent: November 27, 2012Assignee: STMicroelectronics (Tours) SASInventors: Christophe Serre, Laurent Barreau, Vincent Jarry, Patrick Hougron
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Patent number: 8320207Abstract: A method for testing a memory device. The memory device includes a matrix of memory cells having a plurality of rows and columns; the matrix includes a plurality of rows of operative memory cells each one for storing a variable value and at least one row of auxiliary memory cells each one storing a fixed value. The memory device further includes writing circuitry for writing selected values into the operative memory cells, and reading circuitry for reading the values being stored from the operative or auxiliary memory cells. The method includes reading output values from the row of auxiliary memory cells, determining a malfunctioning of the memory device in response to a missing match of the output values with the fixed values, determining a cause of the malfunctioning according to a pattern of reading errors between the output values and the corresponding fixed values, and providing a signal indicative of the cause of the malfunctioning.Type: GrantFiled: December 3, 2010Date of Patent: November 27, 2012Assignee: STMicroelectronics S.r.l.Inventors: Danilo Rimondi, Carolina Selva
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Patent number: 8319597Abstract: An embodiment of a resistor formed by at least one first portion and one second portion, electrically connected to one another and with different crystalline phases. The first portion has a positive temperature coefficient, and the second portion has a negative temperature coefficient. The first portion has a first resistivity, and the second portion has a second resistivity, and the portions are connected so that the resistor has an overall temperature coefficient that is approximately zero.Type: GrantFiled: December 15, 2009Date of Patent: November 27, 2012Assignee: STMicroelectronics S.r.l.Inventor: Stefania Maria Serena Privitera
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Patent number: 8320308Abstract: Data service transmission interruption is minimized by initially setting up a cluster of channels to transmit data services. As the need arises to switch channels due to the detection of an incumbent signal, the data services can be switched with substantially no delay. A group of channels from those available in a wireless network are chosen to form a cluster of channels. Each channel within the cluster is set up to convey data services with channel parameters being stored. A first operating channel is chosen from among the cluster of channels to transmit the data services. While the data services are being transmitted on the first operating channel, out-of-band spectrum sensing occurs on the other channels. Upon predetermined criteria a channel switch occurs. As each channel has already been set up the necessary channel parameters are retrieved from storage and restored without data service interruption.Type: GrantFiled: November 7, 2008Date of Patent: November 27, 2012Assignee: STMicroelectronics, Inc.Inventor: Wendong Hu
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Publication number: 20120293143Abstract: Generating an adjustable bandgap reference voltage comprises generating a current proportional to absolute temperature comprising an equalization of the voltages across the terminals of a core designed to then be traversed by the said current proportional to absolute temperature, generating a current inversely proportional to absolute temperature, summing these two currents and generating said bandgap reference voltage on the basis of the said sum of currents; the said equalization comprises a connection across the terminals of the core of a first fed-back amplifier possessing at least one first stage arranged as a folded setup and comprising first PMOS transistors arranged according to a common-gate setup, and a biasing of the said first stage on the basis of the said current inversely proportional to absolute temperature, the said summation of the two currents being performed in the feedback stage of the first amplifier.Type: ApplicationFiled: May 16, 2012Publication date: November 22, 2012Applicant: STMicroelectronics (Rousset) SASInventors: Jimmy Fort, Thierry Soude
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Publication number: 20120293241Abstract: An electronic trimming circuit carries out a trimming operation on portions of an integrated device. The circuit includes N trimmable interconnected resistances, each connected in parallel to a respective shunt fuse. N trimming transistors are each connected to a respective one of the shunt fuses to force therethrough substantially the whole current flowing in the respective trimming transistor. N bias networks are each functionally connected to a control terminal of a respective one of the trimming transistors to directly bias an active junction thereof. An externally driven heating device is thermally coupled with the active junctions of the trimming transistors adapted to raise the temperature thereof.Type: ApplicationFiled: May 14, 2012Publication date: November 22, 2012Applicant: STMicroelectronics S.r.l.Inventors: Giuseppe SCILLA, Francesco Distefano
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Publication number: 20120293239Abstract: The device for generating a reference current proportional to absolute temperature comprises processing means connected to the terminals of a core and designed to equalize the voltages across the terminals of the core, the core being designed to then be traversed by an internal current proportional to absolute temperature, and an output module designed to deliver to an output terminal the said reference current on the basis of the said internal current; the processing means comprise a self-biased amplifier possessing at least one first stage arranged according to a folded setup and comprising first PMOS transistors arranged in a setup of the common-gate type, and a feedback stage whose input is connected to the output of the amplifier and whose output is connected to the input of the first stage as well as to at least one terminal of the core.Type: ApplicationFiled: May 16, 2012Publication date: November 22, 2012Applicant: STMicroelectronics (Rousset) SASInventors: Jimmy Fort, Thierry Soude
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Device for Generating an Adjustable Bandgap Reference Voltage with Large Power Supply Rejection Rate
Publication number: 20120293149Abstract: An adjustable bandgap reference voltage comprises means for generating current proportional to absolute temperature comprising first means connected to terminals of a core and designed to equalize voltages across the terminals, means for generating a current inversely proportional to absolute temperature connected to the core, and an output module designed to generate the reference voltage; the first processing means comprise a first amplifier possessing a stage, biased by the current inversely proportional to absolute temperature, arranged according to a folded setup and comprising first PMOS transistors arranged according to a common-gate setup, and a stage whose input is connected to the amplifier output and whose output is connected to the first stage input and to a terminal of the core, the second generating means comprise a follower amplifier setup connected to a terminal of the core and separated from the first amplifier, the output module is connected to the feedback stage.Type: ApplicationFiled: May 16, 2012Publication date: November 22, 2012Applicant: STMicroelectronics (Rousset) SASInventors: Jimmy Fort, Thierry Soude -
Patent number: 8314453Abstract: The memory cell is of SRAM type with four transistors provided with a counter-electrode. It comprises a first area made from semiconductor material with a first transfer transistor and a first driver transistor connected in series, their common terminal defining a first electric node. A second transfer transistor and a second driver transistor are connected in series on a second area made from semiconductor material and their common terminal defines a second electric node. The support substrate comprises first and second counter-electrodes. The first and second counter-electrodes are located respectively facing the first and second semiconductor material areas. The first transfer transistor and second driver transistor are on a first side of a plane passing through the first and second electric nodes whereas the first driver transistor and second transfer transistor are on the other side of the plane.Type: GrantFiled: March 28, 2011Date of Patent: November 20, 2012Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, STMicroelectronics (Crolles 2) SASInventors: Olivier Thomas, Claire Fenouillet-Béranger, Philippe Coronel, Stéphane Denorme
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Patent number: 8312769Abstract: An integrated microelectromechanical structure is provided with: a driving mass, anchored to a substrate via elastic anchorage elements and moved in a plane with a driving movement; and a first sensing mass, suspended inside, and coupled to, the driving mass via elastic supporting elements so as to be fixed with respect to the driving mass in the driving movement and to perform a detection movement of rotation out of the plane in response to a first angular velocity; the elastic anchorage elements and the elastic supporting elements cause the detection movement to be decoupled from the driving movement. The elastic supporting elements are coupled to the first sensing mass at an end portion thereof, and the axis of rotation of the detection movement extends, within the first sensing mass, only through the end portion.Type: GrantFiled: November 25, 2009Date of Patent: November 20, 2012Assignee: STMicroelectronics S.r.l.Inventors: Luca Coronato, Gabriele Cazzaniga, Sarah Zerbini
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Patent number: 8315300Abstract: A decision feedback equalizer includes an input path for receiving a bitstream with inter-symbol interference, and a feedback signal path is coupled to the input path for correcting a sampled value of an incoming bit of the bitstream based on inter-symbol interference of a preceding bit. The feedback signal path includes a controllable delay circuit for receiving the preceding bit. A feedback path controller is coupled to the controllable delay circuit to regulate a delay introduced to the preceding bit. The delay is a function of an accumulated value of data of early-late events of a sampling instant of the bitstream for different data pulse patterns.Type: GrantFiled: October 19, 2009Date of Patent: November 20, 2012Assignee: STMicroelectronics S.R.L.Inventor: Massimo Pozzoni
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Patent number: 8314808Abstract: An electronic system, an integrated circuit and a method for display are disclosed. The electronic system contains a first device, a memory and a video/audio compression/decompression device such as a decoder/encoder. The electronic system is configured to allow the first device and the video/audio compression/decompression device to share the memory. The electronic system may be included in a computer in which case the memory is a main memory. Memory access is accomplished by one or more memory interfaces, direct coupling of the memory to a bus, or direct coupling of the first device and decoder/encoder to a bus. An arbiter selectively provides access for the first device and/or the decoder/encoder to the memory based on priority. The arbiter may be monolithically integrated into a memory interface. The decoder may be a video decoder configured to comply with the MPEG-2 standard. The memory may store predicted images obtained from a preceding image.Type: GrantFiled: September 21, 2011Date of Patent: November 20, 2012Assignee: STMicroelectronics, Inc.Inventors: Jefferson Eugene Owen, Raul Zegers Diaz, Osvaldo Colavin
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Patent number: 8314633Abstract: Described herein are various principles for operating a transmitter circuit to reduce noise affecting a signal being generated and reducing jitter. In some embodiments, a circuit is operated in a way that switching occurs at or above a bit rate of transmission, such that at least one switch changes state at least for every bit. Operating the circuit in such a way leads to a switching rate that is above a resonant frequency of the circuit and prevents large oscillations and noise from being inserted into the signal and causing communication problems.Type: GrantFiled: December 30, 2009Date of Patent: November 20, 2012Assignee: STMicroelectronics Pvt. Ltd.Inventors: Nitin Gupta, Tapas Nandy, Phalguni Bala, Pikul Sarkar