Abstract: A method and device for unlatching a door from a frame, using a keyless door latch system, is provided. In one embodiment, a secondary unlocking component receives a signal and derives power from the signal to provide a power source for the keyless door latch system. A microcontroller generates a control signal and an actuator, in response to receiving the control signal, actuates the secondary unlocking component, which allows an energy source, from an exterior of the door, to be transferred to the keyless door latch system for the unlatching of the door.

Abstract: A system and method for operating a memory cell is provided. A non-volatile memory storage device includes an array of memory cells of differential or single-ended type. In an embodiment, a regulator is coupled to a sense amplifier. The regulator is configured to generate a voltage to gate terminals of one or two transistors of the sense amplifier. In the differential type, the voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a maximum current flowing in a memory cell being in a RESET state and a fixed current. In the single-ended type, the regulated voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a fixed current and the reference current generated by the reference current source across temperature.

Abstract: A MEMS actuator includes a monolithic body of semiconductor material, with a supporting portion of semiconductor material, orientable with respect to a first and second rotation axes, transverse to each other. A first frame of semiconductor material is coupled to the supporting portion through first deformable elements configured to control a rotation of the supporting portion about the first rotation axis. A second frame of semiconductor material is coupled to the first frame by second deformable elements, which are coupled between the first and the second frames and configured to control a rotation of the supporting portion about the second rotation axis. The first and second deformable elements carry respective piezoelectric actuation elements.

Abstract: An integrated circuit comprises a processing unit configured for booting up with a set of boot instructions, then for determining the size of the instructions of an application programme and potentially rebooting on its own initiative, while being reconfigured, in order for it to execute the instructions of the application program. Only one boot memory is needed as a consequence.

Abstract: The integrated circuit includes a logic part including standard cells arranged in parallel rows along a first direction and in an alternation of complementary semiconductor wells. Among the standard cells, at least one capacitive filling structure belongs to two adjacent rows and includes a capacitive interface between a conductive armature and the first well, the extent of the second well in the first direction being interrupted over the length of the capacitive filling structure so that the first well occupies in the second direction the width of the two adjacent rows of the capacitive filling structure. A conductive structure electrically connects the second well on either side of the capacitive filling structure.

Abstract: An integrated circuit includes an input pad and a Schmitt trigger coupled to the input pad. The Schmitt trigger includes a first inverter and a second inverter. The Schmitt trigger includes a pull-up transistor coupled to an input of the second inverter and configure to supply a high reference voltage to the input of the second inverter.

Abstract: A microelectronic device includes a PNP transistor and NPN transistor arranged vertically in a P-type doped semiconductor substrate. The PNP and NPN transistors are manufactured by: forming an N+ doped isolating well for the PNP transistor in the semiconductor substrate; forming a P+ doped region in the N+ doped isolating well; epitaxially growing a first semiconductor layer on the semiconductor substrate; forming an N+ doped well for the NPN transistor, where at least part of the N+ doped well extends into the first semiconductor layer; then epitaxially growing a second semiconductor layer on the first semiconductor layer; forming a P doped region forming the collector of the PNP transistor in the second semiconductor layer and in electrical contact with the P+ doped region; and forming an N doped region forming the collector of the NPN transistor in the second semiconductor layer and in electrical contact with the N+ doped well.

Abstract: The present disclosure relates to a method including executing, by an electronic device, a first firmware module stored in a volatile memory of the electronic device, the execution of the first firmware module causing an updated firmware key to be stored in a non-volatile memory of the electronic device, and uploading a second firmware module to the electronic device. The method also includes decrypting the second firmware module by a cryptographic processor of the electronic device based on the updated firmware key, and installing the decrypted second firmware module in the volatile memory of the electronic device at least partially overwriting the first firmware module.

Abstract: A scanning laser projector includes an optical module and projection engine. The optical module includes a laser generator outputting a laser beam, and a movable mirror scanning the laser beam across an exit window defined through the housing in a scanning pattern wider than the exit window such that the laser beam is directed through the exit window in a projection pattern that is smaller than and within the scanning pattern. A first light detector is positioned about a periphery of the exit window such that as the movable mirror scans the laser beam in the scan pattern, at a point in the scan pattern where the laser beam is scanned across an interior of the housing and not through the exit window, the laser beam impinges upon the first light detector. The projection engine adjusts driving of the movable mirror based upon output from the first light detector.

Abstract: A scanning laser projector includes an optical module with a housing defined by a top surface, a bottom surface, and sidewalls extending between the top surface and bottom surface to define an interior compartment within the housing. A given one of the sidewalls has an exit window defined therein. A first light detector is positioned at an interior surface of the given one of the sidewalls about a periphery of the exit window. A second light detector positioned at the interior surface of the given one of the sidewalls about the periphery of the exit window and on a different side thereof than the first light detector.

Abstract: A sensor includes pixels supported by a substrate doped with a first conductivity type. Each pixel includes a portion of the substrate delimited by a vertical insulation structure with an image sensing assembly and a depth sensing assembly. The image sensing assembly includes a first region of the substrate more heavily doped with the first conductivity type and a first vertical transfer gate completely laterally surrounding the first region. Each of the depth sensing assemblies includes a second region of the substrate more heavily doped with the first conductivity type a second vertical transfer gate opposite a corresponding portion of the first vertical transfer gate. The second region is arranged between the second vertical transfer gate and the corresponding portion of the first vertical transfer gate.

Abstract: A low power crystal oscillator circuit having a high power part and a low power part. Oscillation is initialized using the high power part. Once the crystal is under stable oscillation, the circuit switches to the low power part and continue operation for a long duration.

Abstract: A lead frame for an integrated electronic device includes a die pad made of a first metallic material. A top coating layer formed by a second metallic material is arranged on a top surface of the die pad. The second metallic material has an oxidation rate lower than the first metallic material. The top coating layer leaves exposed a number of corner portions of the top surface of the die pad. A subsequent heating operation, for example occurring in connection with wirebonding, causes an oxidized layer to form on the corner portions of the top surface of the die pad at a position in contact with the top coating layer.

Abstract: A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

Abstract: According to one aspect, a method for determining, for a memory allocation, placements in a memory area of data blocks generated by a neural network, comprises a development of an initial sequence of placements of blocks, each placement being selected from several possible placements, the initial sequence being defined as a candidate sequence, a development of at least one modified sequence of placements from a replacement of a given placement of the initial sequence by a memorized unselected placement, and, if the planned size of the memory area obtained by this modified sequence is less than that of the memory area of the candidate sequence, then this modified sequence becomes the candidate sequence, the placements of the blocks for the allocation being those of the placement sequence defined as a candidate sequence once each modified sequence has been developed.

Abstract: The present disclosure relates to an electronic device comprising a pair of first transistors, each first transistor being coupled to a first node by a conduction terminal, a pair of second transistors, each second transistor being coupled to a second node by a conduction terminal, and a third transistor coupling the first and second nodes, the control terminal of the third transistor being coupled to the output of an operational amplifier, the operational amplifier being coupled, at its input, to the first node and to a node of application of a reference voltage.

Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

Abstract: A method for operating an electronic device, including: determining that a touchscreen is in a low frequency display (LFD) mode, determining whether a self-sensing scan was performed in a previous frame of a plurality of frames; after determining, a self-sensing scan was performed in the previous frame, determining a current duration of time corresponding to a current frame based on a previous duration of time corresponding to the previous frame, the previous frame being a frame immediately preceding the current frame; determining, whether the current duration of time is greater than the previous duration of time; and after determining that the current duration is greater than the previous duration, performing a self-sensing scan after the current duration of time, the current duration of time being measured from a beginning of the current frame, the current duration of time having a duration less than a duration of the current frame.

Abstract: A row decoder includes decoder logic generating an initial word line signal, and two inverters. The first inverter is formed by a first p-channel transistor having a source coupled to a supply voltage and a gate receiving the initial word line signal. The second inverter is formed by a first n-channel transistor having a drain coupled to a drain of the first p-channel transistor, a source coupled to a shared ground line, and a gate receiving the initial word line signal. An inverse word line signal is generated at the drain of the first n-channel transistor. A second inverter inverts the inverse word line signal to produce a word line signal. Negative bias generation circuitry generates a negative bias voltage on the shared ground line when the initial word line signal is logic high, and otherwise couples the shared ground line to ground.

Abstract: A voltage supply circuit and a method for controlling a voltage supply circuit are provided. The voltage supply circuit includes a positive charge pump stage that generates a positive voltage and a negative charge pump stage that generates a negative voltage. The voltage supply circuit also includes a control stage that compares a voltage representative of the negative voltage with a reference voltage and causes a slope of the positive voltage to decrease when the voltage representative of the negative voltage exceeds the reference voltage.